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V. S. Khrapai

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Published work

15 published item(s)

preprint2022arXiv

Heat-mode excitation in a proximity superconductor

Mesoscopic superconductivity deals with various quasiparticle excitation modes, only one of them -- the charge-mode -- being directly accessible for conductance measurements due to the imbalance in populations of quasi-electron and quasihole excitation branches. Other modes carrying heat or even spin, valley etc. currents populate the branches equally and are charge-neutral, which makes them much harder to control. This noticeable gap in the experimental studies of mesoscopic non-equilibrium superconductivity can be filled by going beyond the conventional DC transport measurements and exploiting spontaneous current fluctuations. Here, we perform such an experiment and investigate the transport of heat in an open hybrid device based on a superconductor proximitized InAs nanowire. Using shot noise measurements, we investigate sub-gap Andreev heat guiding along the superconducting interface and fully characterize it in terms of the thermal conductance on the order of $G_\mathrm{th}\sim e^2/h$, tunable by a back gate voltage. Understanding of the heat-mode also uncovers its implicit signatures in the non-local charge transport. Our experiments open a direct pathway to probe generic charge-neutral excitations in superconducting hybrids.

preprint2020arXiv

Spatial and energy resolution of electronic states by shot noise

Shot noise measurements are widely used for the characterization of nonequilibrium configurations in electronic conductors. The recently introduced quantum tomography approach was implemented for the studies of electronic wavefunctions of few-electron excitations created by periodic voltage pulses in phase-coherent ballistic conductors based on the high-quality GaAs two-dimensional electron gas. Still relying on the manifestation of Fermi correlations in noise, we focus on the simpler and more general approach beneficial for the local measurements of energy distribution (ED) in electronic systems with arbitrary excitations with well-defined energies and random phases. Using biased diffusive metallic wire as a testbed, we demonstrate the power of this approach and extract the well-known double-step ED from the shot noise of a weakly coupled tunnel junction. Our experiment paves the way for the local measurements of generic nonequilibrium configurations applicable to virtually any conductor.

preprint2019arXiv

Universal bottleneck for thermal relaxation in disordered metallic films

We study the heat relaxation in current biased metallic films in the regime of strong electron-phonon coupling. A thermal gradient in the direction normal to the film is predicted, with a spatial temperature profile determined by the temperature-dependent heat conduction. In the case of strong phonon scattering the heat conduction occurs predominantly via the electronic system and the profile is parabolic. This regime leads to the linear dependence of the noise temperature as a function of voltage bias, in spite of the fact that all the dimensions of the film are large compared to the electron-phonon relaxation length. This is in stark contrast to the conventional scenario of relaxation limited by the electron-phonon scattering rate. A preliminary experimental study of a 200 nm thick NbN film indicates the relevance of our model for materials used in superconducting nanowire single-photon detectors.

preprint2016arXiv

Andreev reflection in s-type superconductor proximized 3D topological insulator

We investigate transport and shot noise in lateral N-TI-S contacts, where N is a normal metal, TI is a Bi-based three dimensional topological insulator (3D TI), and S is an s-type superconductor. In normal state, the devices are in the elastic diffusive transport regime, as demonstrated by a nearly universal value of the shot noise Fano factor $F_{\rm N}\approx1/3$ in magnetic field and in reference normal contact. In the absence of magnetic field, we identify the Andreev reflection (AR) regime, which gives rise to the effective charge doubling in shot noise measurements. Surprisingly, the Fano factor $F_{\rm AR}\approx0.22\pm0.02$ is considerably reduced in the AR regime compared to $F_{\rm N}$, in contrast to previous AR experiments in normal metals and semiconductors. We suggest that this effect is related to a finite thermal conduction of the proximized, superconducting TI owing to a residual density of states at low energies.

preprint2016arXiv

Local noise in a diffusive conductor

The control and measurement of local non-equilibrium configurations is of utmost importance in applications on energy harvesting, thermoelectrics and heat management in nano-electronics. This challenging task can be achieved with the help of various local probes, prominent examples including superconducting or quantum dot based tunnel junctions, classical and quantum resistors, and Raman thermography. Beyond time-averaged properties, valuable information can also be gained from spontaneous fluctuations of current (noise). From these perspective, however, a fundamental constraint is set by current conservation, which makes noise a characteristic of the whole conductor, rather than some part of it. Here we demonstrate how to remove this obstacle and pick up a local noise temperature of a current biased diffusive conductor with the help of a miniature noise probe. This approach is virtually noninvasive and extends primary local measurements towards strongly non-equilibrium regimes.

preprint2016arXiv

Noise thermometry applied to thermoelectric measurements in InAs nanowires

We apply noise thermometry to characterize charge and thermoelectric transport in single InAs nanowires (NWs) at a bath temperature of 4.2 K. Shot noise measurements identify elastic diffusive transport in our NWs with negligible electron-phonon interaction. This enables us to set up a measurement of the diffusion thermopower. Unlike in previous approaches, we make use of a primary electronic noise thermometry to calibrate a thermal bias across the NW. In particular, this enables us to apply a contact heating scheme, which is much more efficient in creating the thermal bias as compared to conventional substrate heating. The measured thermoelectric Seebeck coefficient exhibits strong mesoscopic fluctuations in dependence on the back-gate voltage that is used to tune the NW carrier density. We analyze the transport and thermoelectric data in terms of approximate Mott's thermopower relation and to evaluate a gate-voltage to Fermi energy conversion factor.

preprint2015arXiv

Shot noise of the edge transport in the inverted band HgTe quantum wells

We investigate the current noise in HgTe-based quantum wells with an inverted band structure in the regime of disordered edge transport. Consistent with previous experiments, the edge resistance strongly exceeds $h/e^2$ and weakly depends on the temperature. The shot noise is well below the Poissonian value and characterized by the Fano factor with gate voltage and sample to sample variations in the range $0.1<F<0.3$. Given the fact that our devices are shorter than the most pessimistic estimate of the ballistic dephasing length, these observations exclude the possibility of one-dimensional helical edge transport. Instead, we suggest that a disordered multi-mode conduction is responsible for the edge transport in our experiment.

preprint2014arXiv

Nonlinear transport and noise thermometry in quasi-classical ballistic point contacts

We study nonlinear transport and non-equilibrium current noise in quasi-classical point contacts (PCs) defined in a low-density high-quality two-dimensional electron system in GaAs. At not too high bias voltages $V$ across the PC the noise temperature is determined by a Joule heat power and almost independent on the PC resistance that can be associated with a self-heating of the electronic system. This commonly accepted scenario breaks down at increasing $V$, where we observe extra noise accompanied by a strong decrease of the PC's differential resistance. The spectral density of the extra noise is roughly proportional to the nonlinear current contribution in the PC $δS\approx2F^*|eδI|\sim V^2$ with the effective Fano factor $F^*<1$, indicating that a random scattering process is involved. A small perpendicular magnetic field is found to suppress both $δI$ and $δS$. Our observations are consistent with a concept of a drag-like mechanism of the nonlinear transport mediated by electron-electron scattering in the leads of quasi-classical PCs.

preprint2014arXiv

Tunable non-equilibrium Luttinger liquid based on counter-propagating edge channels

We investigate energy transfer between counter-propagating quantum Hall edge channels (ECs) in a two-dimensional electron system at filling factor ν=1. The ECs are separated by a thin impenetrable potential barrier and Coulomb coupled, thereby constituting a quasi one-dimensional analogue of a spinless Luttinger liquid (LL). We drive one, say hot, EC far from thermal equilibrium and measure the energy transfer rate P into the second, cold, EC using a quantum point contact as a bolometer. The dependence of P on the drive bias indicates breakdown of the momentum conservation, whereas P is almost independent on the length of the region where the ECs interact. Interpreting our results in terms of plasmons (collective density excitations), we find that the energy transfer between the ECs occurs via plasmon backscattering at the boundaries of the LL. The backscattering probability is determined by the LL interaction parameter and can be tuned by changing the width of the electrostatic potential barrier between the ECs.

preprint2013arXiv

Finite-size effect in shot noise in hopping conduction

We study a current shot noise in a macroscopic insulator based on a two-dimensional electron system in GaAs in a variable range hopping (VRH) regime. At low temperature and in a sufficiently depleted sample a shot noise close to a full Poissonian value is measured. This suggests an observation of a finite-size effect in shot noise in the VRH conduction and demonstrates a possibility of accurate quasiparticle charge measurements in the insulating regime.

preprint2013arXiv

Spin transition in the fractional quantum Hall regime: Effect of extent of the wave function

Using a magnetocapacitance technique, we determine the magnetic field of the spin transition, B*, at filling factor nu=2/3 in the 2D electron system in GaAs/AlGaAs heterojunctions. The field B* is found to decrease appreciably as the wave function extent controlled by back gate voltage is increased. Our calculations show that the contributions to the shift of B* from the change of the Coulomb energy and the g factor change due to nonparabolicity are approximately the same. The observed relative shift of B* is described with no fitting parameters.

preprint2012arXiv

Influence of e-e scattering on the temperature dependence of the resistance of a classical ballistic point contact in a two-dimensional electron system

We experimentally investigate the temperature (T) dependence of the resistance of a classical ballistic point contact (PC) in a two-dimensional electron system (2DES). The split-gate PC is realized in a high-quality AlGaAs/GaAs heterostructure. The PC resistance is found to drop by more than 10% as T is raised from 0.5 K to 4.2 K. In the absence of a magnetic field, the T dependence is roughly linear below 2 K and tends to saturate at higher T. Perpendicular magnetic fields on the order of a few 10 mT suppress the T-dependent contribution dR. This effect is more pronounced at lower temperatures, causing a crossover to a nearly parabolic T dependence in a magnetic field. The normalized magnetic field dependencies dR(B) permit an empiric single parameter scaling in a wide range of PC gate voltages. These observations give strong evidence for the influence of electron-electron (e-e) scattering on the resistance of ballistic PCs. Our results are in qualitative agreement with a recent theory of the e-e scattering based T dependence of the conductance of classical ballistic PCs [ Phys. Rev. Lett. 101 216807 (2008) and Phys. Rev. B 81 125316 (2010)].

preprint2012arXiv

Pair Scattering of Electrons in Edge Channels of Opposite Chiralities in the Presence of a Disorder Potential

The nonequilibrium transfer of the energy between electrons of counter-propagating quasi-one-dimensional systems has been perturbatively calculated for edge channels in a two-dimensional system in the integer quantum Hall effect. The processes involving two electrons that are allowed only in the system with disorder have been taken into account. Expressions for the cases of Coulomb scattering and transfer of nonequilibrium phonons have been obtained. The energy transferred per unit time has a quasi-threshold dependence on the degree of nonequilibrium of the hot channel. According to numerical estimates for electrons in GaAs, Coulomb scattering processes dominate in the energy transfer and the expected effect can be experimentally observed.

preprint2010arXiv

Acoustic phonon-based interaction between coplanar quantum circuits in magnetic field

We explore the acoustic phonon-based interaction between two neighboring coplanar circuits containing semiconductor quantum point contacts in a perpendicular magnetic field B. In a drag-type experiment, a current flowing in one of the circuits (unbiased) is measured in response to an external current in the other. In moderate B the sign of the induced current is determined solely by the polarity of B. This indicates that the spatial regions where the phonon emission/reabsorption is efficient are controlled by magnetic field. The results are interpreted in terms of non-equilibrium transport via skipping orbits in two-dimensional electron system.

preprint2010arXiv

Shot noise measurements in a wide-channel transistor near pinch-off

We study a shot noise of a wide channel gated high-frequency transistor at temperature of 4.2K near pinch-off. In this regime, a transition from the metallic to the insulating state is expected to occur, accompanied by the increase of the partition noise. The dependence of the noise spectral density on current is found to be slightly nonlinear. At low currents, the differential Fano factor is enhanced compared to the universal value 1/3 for metallic diffusive conductors. We explain this result by the effect of thermal fluctuations in a nonlinear regime near pinch-off, without calling for the enhanced partition noise.