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Paper detail

Electronic Instability in a Zero-Gap Semiconductor: the Charge-Density Wave in (TaSe4)2I

We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe4)2I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the non-distorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the CDW formation below T_CDW = 263 K, where the incommensurability is a direct consequence of the finite interchain coupling. The formation of small polarons, strongly suggested by the ARPES data, explains the puzzling semiconductor-to-semiconductor transition observed in transport at T_CDW.

preprint2013arXivOpen access
C. Tournier-CollettaL. MoreschiniG. AutèsS. MoserA. CrepaldiH. BergerA. L. WalterK. S. KimA. BostwickP. MonceauE. RotenbergO. V. YazyevM. Grioni
cond-mat.str-el
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C. Tournier-CollettaL. MoreschiniG. AutèsS. MoserA. CrepaldiH. BergerA. L. WalterK. S. KimA. BostwickP. MonceauE. RotenbergO. V. YazyevM. Grioni

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