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A. L. Walter

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cond-mat.str-el cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2013arXiv

Electronic Instability in a Zero-Gap Semiconductor: the Charge-Density Wave in (TaSe4)2I

We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe4)2I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the non-distorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the CDW formation below T_CDW = 263 K, where the incommensurability is a direct consequence of the finite interchain coupling. The formation of small polarons, strongly suggested by the ARPES data, explains the puzzling semiconductor-to-semiconductor transition observed in transport at T_CDW.

preprint2012arXiv

Intrinsic Terahertz Plasmons and Magnetoplasmons in Large Scale Monolayer Graphene

We show that in graphene epitaxially grown on SiC the Drude absorption is transformed into a strong terahertz plasmonic peak due to natural nanoscale inhomogeneities, such as substrate terraces and wrinkles. The excitation of the plasmon modifies dramatically the magneto-optical response and in particular the Faraday rotation. This makes graphene a unique playground for plasmon-controlled magneto-optical phenomena thanks to a cyclotron mass 2 orders of magnitude smaller than in conventional plasmonic materials such as noble metals.

preprint2011arXiv

Multi-component magneto-optical conductivity of multilayer graphene on SiC

Far-infrared diagonal and Hall conductivities of multilayer epitaxial graphene on the C-face of SiC were measured using magneto-optical absorption and Faraday rotation in magnetic fields up to 7 T and temperatures between 5 and 300 K. Multiple components are identified in the spectra, which include: (i) a quasi-classical cyclotron resonance (CR), originating from the highly doped graphene layer closest to SiC, (ii) transitions between low-index Landau levels (LLs), which stem from weakly doped layers and (iii) a broad optical absorption background. Electron and hole type LL transitions are optically distinguished and shown to coexist. An electron-hole asymmetry of the Fermi velocity of about 2% was found within one graphene layer, while the Fermi velocity varies by about 10% across the layers. The optical intensity of the LL transitions is several times smaller than what is theoretically expected for isolated graphene monolayers without electron-electron and electron-phonon interactions.