Researcher profile

G. Autès

G. Autès contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.other cond-mat.str-el

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preprint2016arXiv

Observation of Weyl nodes and Fermi arcs in TaP

A Weyl semimetal possesses spin-polarized band-crossings, called Weyl nodes, connected by topological surface arcs. The low-energy excitations near the crossing points behave the same as massless Weyl fermions, leading to exotic properties like chiral anomaly. To have the transport properties dominated by Weyl fermions, Weyl nodes need to locate nearly at the chemical potential and enclosed by pairs of individual Fermi surfaces with nonzero Fermi Chern numbers. Combining angle-resolved photoemission spectroscopy and first-principles calculation, here we show that TaP is a Weyl semimetal with only single type of Weyl fermions, topologically distinguished from TaAs where two types of Weyl fermions contribute to the low-energy physical properties. The simple Weyl fermions in TaP are not only of fundamental interests but also of great potential for future applications. Fermi arcs on the Ta-terminated surface are observed, which appear in a different pattern from that on the As-termination in TaAs and NbAs.

preprint2014arXiv

Atomic and Electronic Structure of a Rashba $p$-$n$ Junction at the BiTeI Surface

The non-centrosymmetric semiconductor BiTeI exhibits two distinct surface terminations that support spin-split Rashba surface states. Their ambipolarity can be exploited for creating spin-polarized $p$-$n$ junctions at the boundaries between domains with different surface terminations. We use scanning tunneling microscopy/spectroscopy (STM/STS) to locate such junctions and investigate their atomic and electronic properties. The Te- and I-terminated surfaces are identified owing to their distinct chemical reactivity, and an apparent height mismatch of electronic origin. The Rashba surface states are revealed in the STS spectra by the onset of a van Hove singularity at the band edge. Eventually, an electronic depletion is found on interfacial Te atoms, consistent with the formation of a space charge area in typical $p$-$n$ junctions.

preprint2014arXiv

Controlled Growth of a Line Defect in Graphene and Implications for Gate-Tunable Valley Filtering

Atomically precise tailoring of graphene can enable unusual transport pathways and new nanometer-scale functional devices. Here we describe a recipe for the controlled production of highly regular "5-5-8" line defects in graphene by means of simultaneous electron irradiation and Joule heating by applied electric current. High-resolution transmission electron microscopy reveals individual steps of the growth process. Extending earlier theoretical work suggesting valley-discriminating capabilities of a graphene 5-5-8 line defect, we perform first-principles calculations of transport and find a strong energy dependence of valley polarization of the charge carriers across the defect. These findings inspire us to propose a compact electrostatically gated "valley valve" device, a critical component for valleytronics.

preprint2013arXiv

Electronic Instability in a Zero-Gap Semiconductor: the Charge-Density Wave in (TaSe4)2I

We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe4)2I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the non-distorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the CDW formation below T_CDW = 263 K, where the incommensurability is a direct consequence of the finite interchain coupling. The formation of small polarons, strongly suggested by the ARPES data, explains the puzzling semiconductor-to-semiconductor transition observed in transport at T_CDW.

preprint2013arXiv

Infrared and Raman spectroscopy measurements of a transition in the crystal structure and a closing of the energy gap of BiTeI under pressure

BiTeI is a giant Rashba spin splitting system, in which a non-centro symmetric topological phase has recently been suggested to appear under high pressure. We investigated the optical properties of this compound, reflectivity and transmission, under pressures up to $15$ GPa. The gap feature in the optical conductivity vanishes above $p \sim 9$ GPa and does not reappear up to at least $15$ GPa. The plasma edge, associated with intrinsically doped charge carriers, is smeared out through a phase transition at $9$ GPa. Using high pressure Raman spectroscopy, we follow the vibrational modes of BiTeI, providing additional clear evidence that the transition at 9 GPa involves a change of crystal structure. This change of crystal structure possibly inhibits the high-pressure topological phase from occurring.

preprint2012arXiv

Giant ambipolar Rashba effect in a semiconductor: BiTeI

We observe a giant spin-orbit splitting in bulk and surface states of the non-centrosymmetric semiconductor BiTeI. We show that the Fermi level can be placed in the valence or in the conduction band by controlling the surface termination. In both cases it intersects spin-polarized bands, in the corresponding surface depletion and accumulation layers. The momentum splitting of these bands is not affected by adsorbate-induced changes in the surface potential. These findings demonstrate that two properties crucial for enabling semiconductor-based spin electronics -- a large, robust spin splitting and ambipolar conduction -- are present in this material.

preprint2011arXiv

New mechanism for generating spin transfer torque without charge current

A new physical mechanism for generating spin-transfer torque is proposed. It is due to interference of bias driven nonequilibrium electrons incident on a switching junction with the electrons reflected from an insulating barrier inserted in the junction after the switching magnet. It is shown using the rigorous Keldysh formalism that this new out-of-plane torque $T_{\perp}$ is proportional to an applied bias and is as large as the torque in a conventional junction generated by a strong charge current. However, the charge current and the in-plane torque $T_{\parallel}$ are almost completely suppressed by the insulating barrier. This new junction thus offers the highly applicable possibility of bias-induced switching of magnetization without charge current.

G. Autès

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7 published item(s)

Observation of Weyl nodes and Fermi arcs in TaP

Atomic and Electronic Structure of a Rashba $p$-$n$ Junction at the BiTeI Surface

Controlled Growth of a Line Defect in Graphene and Implications for Gate-Tunable Valley Filtering

Electronic Instability in a Zero-Gap Semiconductor: the Charge-Density Wave in (TaSe4)2I

Infrared and Raman spectroscopy measurements of a transition in the crystal structure and a closing of the energy gap of BiTeI under pressure

Giant ambipolar Rashba effect in a semiconductor: BiTeI

New mechanism for generating spin transfer torque without charge current