Abstract
We derive the effective single-band Hamiltonian in the flat NiO planes for nickelate compounds NdSrNiO. We first implement the first-principles calculation to study electronic structures of nickelates using the Heyd-Scuseria-Ernzerhof hybrid density functional and derive a three-band Hubbard model for Ni-O bands of Ni and O orbitals in the NiO planes. To obtain the effective one-band -- model Hamiltonian, we perform the exact diagonalization of the three-band Hubbard model for the NiO cluster and map the low-energy spectra onto the effective one-band models. We find that the undoped NiO plane is a Hubbard Mott insulator, and the doped holes primarily locate on Ni sites. The physics of the NiO plane is a doped Mott insulator, described by the one-band -- model with ~meV, ~meV and ~meV. We also discuss the electronic structure for the "self-doping" effect and heavy fermion behavior of electron pockets of Nd character in NdSrNiO.
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