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Researcher profile

Shanmin Wang

Shanmin Wang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elcond-mat.supr-concond-mat.mes-hall

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Published work

9 published item(s)

preprint2022arXiv

Emergent magnetic states and tunable exchange bias at all 3d nitride heterointerfaces

Interfacial magnetism stimulates the discovery of giant magnetoresistance and spin-orbital coupling across the heterointerfaces, facilitating the intimate correlation between spin transport and complex magnetic structures. Over decades, functional heterointerfaces composed of nitrides are seldomly explored due to the difficulty in synthesizing high-quality and correct composition nitride films. Here we report the fabrication of single-crystalline ferromagnetic Fe3N thin films with precisely controlled thickness. As film thickness decreasing, the magnetization deteriorates dramatically, and electronic state transits from metallic to insulating. Strikingly, the high-temperature ferromagnetism maintains in a Fe3N layer with a thickness down to 2 u. c. (~ 8 Å). The magnetoresistance exhibits a strong in-plane anisotropy and meanwhile the anomalous Hall resistance reserves its sign when Fe3N layer thickness exceeds 5 u. c. Furthermore, we observe a sizable exchange bias at the interfaces between a ferromagnetic Fe3N and an antiferromagnetic CrN. The exchange bias field and saturation moment strongly depend on the controllable bending curvature using cylinder diameter engineering (CDE) technique, implying the tunable magnetic states under lattice deformation. This work provides a guideline for exploring functional nitride films and applying their interfacial phenomena for innovative perspectives towards the practical applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Giant viscoelasticity near Mott criticality in PbCrO3 with large lattice anomalies

Coupling of charge and lattice degrees of freedom in materials can produce intriguing electronic phenomena, such as conventional superconductivity where the electrons are mediated by lattice for creating supercurrent. The Mott transition, which is a source for many fascinating emergent behaviors, is originally thought to be driven solely by correlated electrons with an Ising criticality. Recent studies on the known Mott systems have shown that the lattice degree of freedom is also at play, giving rise to either Landau or unconventional criticality. However, the underlying coupling mechanism of charge and lattice degrees of freedom around the Mott critical endpoint remains elusive, leading to difficulties in understanding the associated Mott physics. Here we report a study of Mott transition in cubic PbCrO3 by measuring the lattice parameter, using high-pressure x-ray diffraction techniques. The Mott criticality in this material is revealed with large lattice anomalies, which is governed by giant viscoelasticity that presumably results from a combination of lattice elasticity and electron viscosity. Because of the viscoelastic effect, the lattice of this material behaves peculiarly near the critical endpoint, inconsistent with any existing university classes. We argue that the viscoelasticity may play as a hidden degree of freedom behind the Mott criticality.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Pressure-induced superconductivity in flat-band Kagome compounds Pd$_3$P$_2$(S$_{1-x}$Se$_x$)$_8$

We performed high-pressure transport studies on the flat-band Kagome compounds, Pd$_3$P$_2$(S$_{1-x}$Se$_x$)$_8$ ($x$ = 0, 0.25), with a diamond anvil cell. For both compounds, the resistivity exhibits an insulating behavior with pressure up to 17 GPa. With pressure above 20 GPa, a metallic behavior is observed at high temperatures in Pd$_3$P$_2$S$_8$, and superconductivity emerges at low temperatures. The onset temperature of superconducting transition $T_{\rm C}$ rises monotonically from 2 K to 4.8 K and does not saturate with pressure up to 43 GPa. For the Se-doped compound Pd$_3$P$_2$(S$_{0.75}$Se$_{0.25}$)$_8$, the $T_{\rm C}$ is about 1.5 K higher than that of the undoped one over the whole pressure range, and reaches 6.4 K at 43 GPa. The upper critical field with field applied along the $c$ axis at typical pressures is about 50$\%$ of the Pauli limit, suggesting a 3D superconductivity. The Hall coefficient in the metallic phase is low and exhibits a peaked behavior at about 30 K, which suggests either a multi-band electronic structure or an electron correlation effect in the system.

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preprint2021arXiv

Anisotropic electronic phase transition in CrN epitaxial thin films

Electronic phase transition in strongly correlated materials is extremely sensitive to the dimensionality and crystallographic orientations. Transition metal nitrides (TMNs) are seldom investigated due to the difficulty in fabricating the high-quality and stoichiometric single crystals. In this letter, we report the epitaxial growth and electronic properties of CrN films on different-oriented NdGaO3 (NGO) substrates. Astonishingly, the CrN films grown on (110)-oriented NGO substrates maintain a metallic phase, whereas the CrN films grown on (010)-oriented NGO substrates are semiconducting. We attribute the unconventional electronic transition in the CrN films to the strongly correlation with epitaxial strain. The effective modulation of bandgap by the anisotropic strain triggers the metal-to-insulator transition consequently. This work provides a convenient approach to modify the electronic ground states of functional materials using anisotropic strain and further stimulates the investigations of TMNs.

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preprint2021arXiv

Room-temperature ferromagnetism at an oxide/nitride interface

Heterointerfaces have led to the discovery of novel electronic and magnetic states because of their strongly entangled electronic degrees of freedom. Single-phase chromium compounds always exhibit antiferromagnetism following the prediction of Goodenough-Kanamori rules. So far, exchange coupling between chromium ions via hetero-anions has not been explored and the associated quantum states is unknown. Here we report the successful epitaxial synthesis and characterizations of chromium oxide (Cr2O3)-chromium nitride (CrN) superlattices. Room-temperature ferromagnetic spin ordering is achieved at the interfaces between these two antiferromagnets, and the magnitude of the effect decays with increasing layer thickness. First-principles calculations indicate that robust ferromagnetic spin interaction between Cr3+ ions via anion-hybridizations across the interface yields the lowest total energy. This work opens the door to fundamental understanding of the unexpected and exceptional properties of oxide-nitride interfaces and provides access to hidden phases at low-dimensional quantum heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Structural Twinning-induced Insulating Phase in CrN (111) Films

Electronic states of a correlated material can be effectively modified by structural variations delivered from a single-crystal substrate. In this letter, we show that the CrN films grown on MgO (001) substrates have a (001) orientation, whereas the CrN films on α-Al2O3 (0001) substrates are oriented along (111) direction parallel to the surface normal. Transport properties of CrN films are remarkably different depending on crystallographic orientations. The critical thickness for the metal-insulator transition (MIT) in CrN 111 films is significantly larger than that of CrN 001 films. In contrast to CrN 001 films without apparent defects, scanning transmission electron microscopy results reveal that CrN 111 films exhibit strain-induced structural defects, e. g. the periodic horizontal twinning domains, resulting in an increased electron scattering facilitating an insulating state. Understanding the key parameters that determine the electronic properties of ultrathin conductive layers is highly desirable for future technological applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Core-level x-ray photoemission and Raman spectroscopy studies on electronic structures in Mott-Hubbard type nickelate oxide NdNiO$_2$

We perform core-level X-ray photoemission spectroscopy (XPS) and electronic Raman scattering studies of electronic structures and spin fluctuations in the bulk samples of the nickelate oxide NdNiO$_2$. According to Nd $3d$ and O $1s$ XPS spectra, we conclude that NdNiO$_2$ has a large transfer energy. From the analysis of the main line of the Ni $2p_{3/2}$ XPS, we confirm the NiO$_2$ planes in NdNiO$_2$ are of Mott-Hubbard type in the Zaanen-Sawatzky-Allen scheme. The two-magnon peak in the Raman scattering provides direct evidence for the strong spin-fluctuation in NdNiO$_2$. The peak position determines the antiferromagnetic exchange $J=25$~meV. Our experimental results agree well with our previous theoretical results.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Pressure-dependent Intermediate Magnetic Phase in Thin Fe$_3$GeTe$_2$ Flakes

We investigated the evolution of ferromagnetism in layered Fe$_3$GeTe$_2$ flakes under different pressures and temperatures using in situ magnetic circular dichroism (MCD) spectroscopy. We found that the rectangle shape of hysteretic loop under an out-of-plane magnetic field sweep can sustain below 7 GPa. Above that pressure, an intermediate state appears at low temperature region signaled by an 8-shaped skew hysteretic loop. Meanwhile, the coercive field and Curie temperature decrease with increasing pressures, implying the decrease of the exchange interaction and the magneto-crystalline anisotropy under pressures. The intermediate phase has a labyrinthine domain structure, which is attributed to the increase of ratio of exchange interaction to magneto-crystalline anisotropy based on Jagla's theory. Moreover, our calculation results reveal a weak structural transition around 6 GPa, which leads to a drop of the magnetic momentum of Fe ions.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Effective Hamiltonian for superconducting Ni oxides Nd$_{1-x}$Sr$_x$NiO$_2$

We derive the effective single-band Hamiltonian in the flat NiO$_2$ planes for nickelate compounds Nd$_{1-x}$Sr$_x$NiO$_2$. We first implement the first-principles calculation to study electronic structures of nickelates using the Heyd-Scuseria-Ernzerhof hybrid density functional and derive a three-band Hubbard model for Ni-O $pdσ$ bands of Ni$^+$ $3d_{x^2-y^2}$ and O$^{2-}$ $2p_{x/y}$ orbitals in the NiO$_2$ planes. To obtain the effective one-band $t$-$t'$-$J$ model Hamiltonian, we perform the exact diagonalization of the three-band Hubbard model for the Ni$_5$O$_{16}$ cluster and map the low-energy spectra onto the effective one-band models. We find that the undoped NiO$_2$ plane is a Hubbard Mott insulator, and the doped holes primarily locate on Ni sites. The physics of the NiO$_2$ plane is a doped Mott insulator, described by the one-band $t$-$t'$-$J$ model with $t=265$~meV, $t'=-21$~meV and $J=28.6$~meV. We also discuss the electronic structure for the "self-doping" effect and heavy fermion behavior of electron pockets of Nd$^{3+}$ $5d$ character in Nd$_{1-x}$Sr$_x$NiO$_2$.

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