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Researcher profile

Hu Zhang

Hu Zhang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elComputer Visioncond-mat.supr-con

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Published work

7 published item(s)

preprint2022arXiv

Birefringent Majorana fermions

We propose the concept of birefringent Majorana fermions as collective excitations of quantum interacting many-body states motivated by the already known quasiparticles including Dirac fermions, birefringent Dirac fermions and Majorana fermions. Low energy effective models are constructed to understand the basic mathematical structures of equations of motion and physical properties. We find that the equation of motion, with two different "speed of light", describing birefringent Majorana fermions in condensed matter physics is the birefringence version of the original Majorana equation of real relativistic fermions.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Double version of the Rashba and Dresselhaus spin-orbit coupling

The Rashba and Dresselhaus types of spin-orbit coupling are two typical linear coupling forms. We establish the fundamental physics of a model which can be viewed as the double version of the Rashba and Dresselhaus spin-orbit coupling. This model describes the low energy physics of a class of massless Dirac fermions in spin-orbit systems. The physical properties of the massless Dirac fermions are determined by the mathematical relations of spin-orbit coefficients. For equal Rashba and Dresselhauss coupling constants, k-independent eigenspinors and a persistent spin helix combined with massless birefringent Dirac fermions emerge in this model. The spin-orbit coupled systems described by this model have potential technological applications from spintronics to quantum computation.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Parity-breaking in single-element phases: Ferroelectric-like elemental polar metals

Polar metals based on binary and ternary compounds have been demonstrated in literature. Here, we propose a design principle for ferroelectric-like elemental polar metals and relate it to real materials. The design principle is that, to be an elemental polar metal, atoms should occupy at least two inequivalent Wyckoff positions in a crystal with a polar space group, where inversion symmetry is spontaneously broken. According to this rule, we propose the first class of potential ferroelectric-like elemental polar metals in a distorted α-La-like structure with a polar space group P63mc in which two inequivalent Wyckoff positions 2a (0, 0, z) and 2b (1/3, 2/3, z) are occupied by group-V elements (phosphorus, arsenic, antimony, and bismuth). Analyses based on first-principles calculations indicate that the dynamically stable polar phase results from a lone pair driven polar distortion of the nonploar phase in P63/mmc symmetry where two inequivalent Wyckoff positions 2a (0, 0, 0) and 2c (1/3, 2/3, 1/4) are occupied. This ferroelectric-like transition involves a transition from a metallic state to a semimetallic state. These predicted polar phases are metastable with respect to their corresponding ground phases. Moreover, ionic bonding characters are found due to the inequivalence in Wyckoff positions between group-V atoms. Our work opens a route to single-element parity-breaking phases.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Spin field-effect transistors based on massless birefringent Dirac fermions in polar Dirac semimetals

The Datta-Das-type spin field-effect transistor, using a two-dimensional electron gas in a semiconductor heterostructure as a channel, plays a key role in spintronics. Here, we theoretically present a type of spin field-effect transistor based on massless birefringent Dirac fermions in polar Dirac semimetals. The manipulation of spin arises from the existence of the strong spin-orbit coupling, polar space groups, and Dirac cones in a single phase. The oscillatory channel conductance can be controlled by the sign of gate voltage in addition to its magnitude due to the gapless band structures of polar Dirac semimetals. Such spin field-effect transistor provides guidance for the further design of spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Hole- and electron-injection driven phase transitions in transition metal dichalcogenides and beyond: A unified understanding

The phase transitions among polymorphic two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted increasing attention for their potential in enabling distinct functionalities in the same material for making integrated devices. Electron-injection to TMDs has been proved to be a feasible way to drive structural phase transition from the semiconducting H-phase to the semimetal dT-phase. In this contribution, based on density-functional theory (DFT) calculations, firstly we demonstrate that hole-injection drives the transition of the H-phase more efficiently to the metallic T-phase than to the semimetallic dT-phase for group VI-B TMDs (MoS2, WS2, and MoSe2, etc.). The origin can be attributed to the smaller work function of the T-phase than that of the dT-phase. Our work function analysis can distinguish the T and dT phases quantitatively while it is challenging for the commonly used crystal field splitting analysis. In addition, our analysis provides a unified understanding for both hole- and electron-injection induced phase transitions for 2D materials beyond TMDs, such as the newly synthesized MoSi2N4 family. Moreover, the hole-driven T-phase transition mechanism can explain the recent experiment of WS2 phase transition by hole-doping with yttrium (Y) atoms. Using 1/3 Y-doped WS2 and MoSe2 as examples, we show that the Mo and W valency increases to 5+. These above findings open up an avenue to obtain the metallic T-phase, which expands the possible stable phases of 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Query-efficient Meta Attack to Deep Neural Networks

Black-box attack methods aim to infer suitable attack patterns to targeted DNN models by only using output feedback of the models and the corresponding input queries. However, due to lack of prior and inefficiency in leveraging the query and feedback information, existing methods are mostly query-intensive for obtaining effective attack patterns. In this work, we propose a meta attack approach that is capable of attacking a targeted model with much fewer queries. Its high queryefficiency stems from effective utilization of meta learning approaches in learning generalizable prior abstraction from the previously observed attack patterns and exploiting such prior to help infer attack patterns from only a few queries and outputs. Extensive experiments on MNIST, CIFAR10 and tiny-Imagenet demonstrate that our meta-attack method can remarkably reduce the number of model queries without sacrificing the attack performance. Besides, the obtained meta attacker is not restricted to a particular model but can be used easily with a fast adaptive ability to attack a variety of models.The code of our work is available at https://github.com/dydjw9/MetaAttack_ICLR2020/.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Effective Hamiltonian for superconducting Ni oxides Nd$_{1-x}$Sr$_x$NiO$_2$

We derive the effective single-band Hamiltonian in the flat NiO$_2$ planes for nickelate compounds Nd$_{1-x}$Sr$_x$NiO$_2$. We first implement the first-principles calculation to study electronic structures of nickelates using the Heyd-Scuseria-Ernzerhof hybrid density functional and derive a three-band Hubbard model for Ni-O $pdσ$ bands of Ni$^+$ $3d_{x^2-y^2}$ and O$^{2-}$ $2p_{x/y}$ orbitals in the NiO$_2$ planes. To obtain the effective one-band $t$-$t'$-$J$ model Hamiltonian, we perform the exact diagonalization of the three-band Hubbard model for the Ni$_5$O$_{16}$ cluster and map the low-energy spectra onto the effective one-band models. We find that the undoped NiO$_2$ plane is a Hubbard Mott insulator, and the doped holes primarily locate on Ni sites. The physics of the NiO$_2$ plane is a doped Mott insulator, described by the one-band $t$-$t'$-$J$ model with $t=265$~meV, $t'=-21$~meV and $J=28.6$~meV. We also discuss the electronic structure for the "self-doping" effect and heavy fermion behavior of electron pockets of Nd$^{3+}$ $5d$ character in Nd$_{1-x}$Sr$_x$NiO$_2$.

0 citations0 reviewsNo code linkedOpen access