Abstract

With decreasing density nsn_s the thermopower SS of a low-disorder 2D electron system in silicon is found to exhibit a sharp increase by more than an order of magnitude, tending to a divergence at a finite, disorder-independent density ntn_t consistent with the critical form (−T/S)∝(ns−nt)x(-T/S) \propto (n_s-n_t)^x with x=1.0±0.1x=1.0\pm 0.1 (TT is the temperature). Our results provide clear evidence for an interaction-induced transition to a new phase at low density in a strongly-interacting 2D electron system.

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