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A. Mokashi

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cond-mat.dis-nn cond-mat.str-el

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preprint2012arXiv

Critical Behavior of a Strongly Interacting 2D Electron System

With decreasing density $n_s$ the thermopower $S$ of a low-disorder 2D electron system in silicon is found to exhibit a sharp increase by more than an order of magnitude, tending to a divergence at a finite, disorder-independent density $n_t$ consistent with the critical form $(-T/S) \propto (n_s-n_t)^x$ with $x=1.0\pm 0.1$ ( $T$ is the temperature). Our results provide clear evidence for an interaction-induced transition to a new phase at low density in a strongly-interacting 2D electron system.

preprint2009arXiv

Test of scaling theory in two dimensions in the presence of valley splitting and intervalley scattering in Si-MOSFETs

We show that once the effects of valley splitting and intervalley scattering are incorporated, renormalization group theory consistently describes the metallic phase in silicon metal-oxide-semiconductor field-effect transistors down to the lowest accessible temperatures.

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