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Researcher profile

V. T. Dolgopolov

V. T. Dolgopolov contributes to research discovery and scholarly infrastructure.

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cond-mat.str-elcond-mat.supr-con

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Published work

4 published item(s)

preprint2022arXiv

Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system

The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells. We find that the temperature $T_{\text{max}}$, at which the resistivity exhibits a maximum, is close to the renormalized Fermi temperature. However, rather than increasing along with the Fermi temperature, the value $T_{\text{max}}$ decreases appreciably for spinless electrons in spin-polarizing (parallel) magnetic fields. The observed behaviour of $T_{\text{max}}$ cannot be described by existing theories. The results indicate the spin-related origin of the effect.

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preprint2020arXiv

Metallic state in a strongly interacting spinless two-valley electron system in two dimensions

We have studied the strongly interacting, two-valley two-dimensional (2D) electron system in ultrahigh mobility SiGe/Si/SiGe quantum wells in parallel magnetic fields strong enough to completely polarize the electron spins thus making the electron system "spinless". It occurs that the metallic temperature dependence of the resistivity, although weaker than that in the absence of magnetic field, still remains strong even when the spin degree of freedom is removed. Several independent methods have been used to establish the existence of the genuine MIT in the spinless two-valley 2D system. This is in contrast to the previous results obtained on more disordered silicon samples, where the polarizing magnetic field causes a complete quench of the metallic temperature behavior.

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preprint2019arXiv

Quantum phase transition in ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system

The metal-insulator transition (MIT) is an exceptional test bed for studying strong electron correlations in two dimensions in the presence of disorder. In the present study, it is found that in contrast to previous experiments on lower-mobility samples, in ultra-high mobility SiGe/Si/SiGe quantum wells the critical electron density, $n_{\text{c}}$, of the MIT becomes smaller than the density, $n_{\text{m}}$, where the effective mass at the Fermi level tends to diverge. Near the topological phase transition expected at $n_{\text{m}}$, the metallic temperature dependence of the resistance should be strengthened, which is consistent with the experimental observation of more than an order of magnitude resistance drop with decreasing temperature below $\sim1$ K.

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preprint2010arXiv

Superconductor-insulator quantum phase transition

The current understanding of the superconductor-insulator transition is discussed level by level in a cyclic spiral-like manner. At the first level, physical phenomena and processes are discussed which, while of no formal relevance to the topic of transitions, are important for their implementation and observation; these include superconductivity in low electron density materials, transport and magnetoresistance in superconducting island films and in highly resistive granular materials with superconducting grains, and the Berezinskii-Kosterlitz-Thouless transition. The second level discusses and summarizes results from various microscopic approaches to the problem, whether based on the Bardeen-Cooper-Schrieffer theory (the disorder-induced reduction in the superconducting transition temperature; the key role of Coulomb blockade in high-resistance granular superconductors; superconducting fluctuations in a strong magnetic field) or on the theory of the Bose-Einstein condensation. A special discussion is given to phenomenological scaling theories. Experimental investigations, primarily transport measurements, make the contents of the third level and are for convenience classified by the type of material used (ultrathin films, variable composition materials, high-temperature superconductors, superconductor-poor metal transitions). As a separate topic, data on nonlinear phenomena near the superconductor-insulator transition are presented. At the final, summarizing, level the basic aspects of the problem are enumerated again to identify where further research is needed and how this research can be carried out. Some relatively new results, potentially of key importance in resolving the remaining problems, are also discussed.

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