Paper detail

A UV Sensitive Integrated Micromegas with Timepix Readout

This article presents a detector system consisting of three components, a CMOS imaging array, a gaseous-detector structure with a Micromegas layout and a UV-photon sensitive CsI reflective photocathode. All three elements have been monolithically integrated using simple post-processing steps. The Micromegas structure and the CMOS imaging chip are not impacted by the CsI deposition. The detector operated reliably in He/isobutane mixtures and attained charge gains with single photons up to a level of 6 \cdot 10^4. The Timepix CMOS array permitted high resolution imaging of single UV-photons. The system has an MTF50 of 0.4 lp/pixel which corresponds to app. 7 lp/mm.

preprint2010arXivOpen access

Signal facts

What is known right now

Open access10 authors1 topic

Next steps

Decide what to do with this paper

Use like or dislike for the fast social read. The more specific scholarly feedback stays available below when needed.

Log in to curate

Reading frame

Keep the important context close to the paper

Keep the important signals around this paper in one place: votes, save state, collection context, reviews and the metadata you need before deciding what to do next.

Add specific reaction

Move through the context

Research map

Open full explorer

Move through nearby people, institutions, topics and adjacent work without leaving the paper page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Structured reviews

0 review(s)

ContributeLeave structured feedbackUse the review template when you have a concrete strength, concern or method question.Open review form

No structured reviews yet. High-signal critique starts here.

Work discussion

0 comment(s)

DiscussAdd a high-signal commentKeep quick notes, caveats and replication pointers separate from formal reviews.Open comment form

No discussion yet. The first strong comment sets the tone.