Researcher profile

Harry van der Graaf

Harry van der Graaf contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Performance of the GridPix detector quad

A gaseous pixel readout module with four GridPix chips, called the quad, has been developed as a building block for a large time projection chamber readout plane. The quad module has dimensions 39.6 mm $\times$ 28.38 mm and an active surface coverage of 68.9%. The GridPix chip consists of a Timepix3 chip with integrated amplification grid and have a high efficiency to detect single ionisation electrons, which enable to make a precise track position measurement. A quad module was installed in a small time projection chamber and measurements of 2.5 GeV electrons were performed at the ELSA accelerator in Bonn, where a silicon telescope was used to provide a reference track. The error on the track position measurement, both in the pixel plane and drift direction, is dominated by diffusion. The quad was designed to have minimum electrical field inhomogeneities and distortions, achieving systematics of better than 13 $μ$m in the pixel plane. The resolution of the setup is 41 $μ$m, where the total systematic error of the quad detector is 24 $μ$m.

preprint2015arXiv

Optical properties of silicon rich silicon nitride (SixNyHz) from first principles

The real and imaginary parts of the complex refractive index of SixNyHz have been calculated using density functional perturbation theory. Optical spectra for reflectivity, adsorption coefficient, energy-loss function (ELF), and refractive index, are obtained. The results for Si3N4 are in agreement with the available theoretical and experimental results. To understand the electron energy loss mechanism in Si rich silicon nitride, the influence of the Si doping rate, of the positions of the dopants, and of H in and on the surface on the ELF have been investigated. It has been found that all defects, such as dangling bonds in the bulk and surfaces, increase the intensity of the ELF in the low energy range (below 10 eV). H in the bulk and on the surface has a healing effect, which can reduce the intensity of the loss peaks by saturating the dangling bonds. Electronic structure analysis has confirmed the origin of the changes in the ELF. It has demonstrated that the changes in ELF is not only affected by the composition but also by the microstructures of the materials. The results can be used to tailor the optical properties, in this case the ELF of Si rich Si3N4, which is essential for secondary electron emission application.