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Researcher profile

Zhen Zhan

Zhen Zhan contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

9 published item(s)

preprint2026arXiv

Moiré-Driven Equilibrium

Perturbations in moiré materials, such as due to substrates or strain, are common in many experiments and can significantly modify the electronic properties of the system. Here, we show that perturbations in twisted bilayer graphene tend to be transferred between the coupled Dirac cones, eventually reaching an equilibrium near the magic angle. We connect our results to experiments and show that this equilibrium behavior remains robust even when the moiré potential itself is perturbed. Our findings extend the notion of the magic angle to a more general regime governed by moiré-driven equilibrium.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Commensurate and incommensurate double moiré interference in twisted trilayer graphene

Twisted graphene multi-layers have been recently demonstrated to share several correlation-driven behaviours with twisted bilayer graphene. In general, the van Hove singularities (VHSs) can be used as a proxy of the tendency for correlated behaviours. In this paper, we adopt an atomistic method by combining tight-binding method with the semi-classical molecular dynamics to investigate the electronic structures of twisted trilayer graphene (TTG) with two independent twist angles. The two independent twist angles can lead to the interference of the moiré patterns forming a variety of commensurate/incommensurate complex supermoiré patterns. In particular, the lattice relaxation, twist angle and angle disorder effects on the VHS are discussed. We find that the lattice relaxation significantly influence the position and magnitude of the VHSs. In the supermoiré TTG, the moiré interference provides constructive or destructive effects depending on the relative twist angle. By modulating the two independent twist angles, novel superstructures, for instance, the Kagome-like lattice, could constructed via the moiré pattern. Moreover, we demonstrate that a slight change in twist angles (angle disorder) provides a significant suppression of the peak of the VHSs. Apart from the moiré length, the evolution of the VHSs and the LDOS mapping in real space could be used to identify the twist angles in the complicated TTG. In practice, our work could provide a guide for exploring the flat band behaviours in the supermoiré TTG experimentally.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Flat-band plasmons in twisted bilayer transition metal dichalcogenides

Twisted bilayer transition metal dichalcogenides are ideal platforms to study flat-band phenomena. In this paper, we investigate flat-band plasmons in the hole-doped twisted bilayer MoS$_2$ (tb-MoS$_2$) by employing a full tight-binding model and the random phase approximation. When considering lattice relaxations in tb-MoS$_2$, the flat band is not separated from remote valence bands, which makes the contribution of interband transitions in transforming the plasmon dispersion and energy significantly different. In particular, low-damped and quasi-flat plasmons emerge if we only consider intraband transitions in the doped flat band, whereas a $\sqrt q$ plasmon dispersion emerges if we also take into account interband transitions between the flat band and remote bands. Furthermore, the plasmon energies are tunable with twist angles and doping levels. However, in a rigid sample that suffers no lattice relaxations, lower-energy quasi-flat plasmons and higher-energy interband plasmons can coexist. For rigid tb-MoS$_2$ with a high doping level, strongly enhanced interband transitions quench the quasi-flat plasmons. Based on the lattice relaxation and doping effects, we conclude that two conditions, the isolated flat band and a properly hole-doping level, are essential for observing the low-damped and quasi-flat plasmon mode in twisted bilayer transition metal dichalcogenides. We hope that our study on flat-band plasmons can be instructive for studying the possibility of plasmon-mediated superconductivity in twisted bilayer transition metal dichalcogenides in the future.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

An accurate description of the structural and electronic properties of twisted bilayer graphene-boron nitride heterostructures

Twisted bilayer graphene (TBG) has taken the spotlight in the condensed matter community since the discovery of correlated phases at the so-called magic angle. Interestingly, the role of a substrate on the electronic properties of TBG has not been completely elucidated. Up to now, most of the theoretical works carried out in order to understand this effect have been done using continuum models. In this work, we have gone one step ahead and have studied heterostructures of TBG and hBN using an atomistic tight-binding model together with semi-classical molecular dynamics to take into account relaxation effects. We found that the presence of the hBN substrate has significant effects to the band structure of TBG even in the case where TBG and hBN are not aligned. Specifically, the substrate induces a large mass gap and strong pseudomagnetic fields which break the layer degeneracy. Interestingly, such degeneracy can be recovered with a second hBN layer. Finally, we have also developed a continuum model that describes the tight-binding band structure. Our results show that a real-space tight-binding model in combination with semi-classical molecular dynamics are a powerful tool to study the electronic properties of supermoiré systems and that using this real-space methodology could be key in order to explain certain experimental results in which the effect of the substrate plays an important role.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Realizing One-dimensional Metallic States in Graphene via Periodically Coupled Zeroth Pseudo-Landau Levels

Strain-induced pseudo-magnetic fields can mimic real magnetic fields to generate a zero-magnetic-field analogue of the Landau levels (LLs), i.e., the pseudo-LLs, in graphene. The distinct nature of the pseudo-LLs enables one to realize novel electronic states beyond that can be feasible with real LLs. Here, we report the realization of one-dimensional (1D) metallic states, which can be described well by the Su-Schrieffer-Heeger model, in graphene via periodically coupled zeroth pseudo-LLs. In our experiment, nanoscale strained structures embedded with pseudo-LLs are generated periodically along 1D channel of suspended graphene monolayer. Our experiments demonstrate that the zeroth pseudo-LLs of these strained structures are coupled to form metallic states, exhibiting a serpentine pattern that snakes back and forth along the 1D suspended graphene monolayer. These results are verified theoretically by large-scale tight-binding calculations of the strained samples. Our result provides a new pathway to realize novel quantum states and engineer the electronic properties of graphene by using the localized pseudo-LLs as building blocks.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electronic structure of 30° twisted double bilayer graphene

In this paper, the electronic properties of 30° twisted double bilayer graphene, which loses the translational symmetry due to the incommensurate twist angle, are studied by means of the tight-binding approximation. We demonstrate the interlayer decoupling in the low-energy region from various electronic properties, such as the density of states, effective band structure, optical conductivity and Landau level spectrum. However, at Q points, the interlayer coupling results in the appearance of new Van Hove singularities in the density of states, new peaks in the optical conductivity and importantly the 12-fold-symmetry-like electronic states. The k-space tight-binding method is adopted to explain this phenomenon. The electronic states at Q points show the charge distribution patterns more complex than the 30° twisted bilayer graphene due to the symmetry decrease. These phenomena appear also in the 30° twisted interface between graphene monolayer and AB stacked bilayer.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Multi-ultraflatbands tunability and effect of spin-orbit coupling in twisted bilayer transition metal dichalcogenides

Ultraflatbands that have been theoretically and experimentally detected in a bunch of van der Waals stacked materials showing some peculiar properties, for instance, highly localized electronic states and enhanced electron-electron interactions. In this Letter, using an accurate tight-binding model, we study the formation and evolution of ultraflatbands in transition metal dichalcogenides (TMDCs) under low rotation angles. We find that, unlike in twisted bilayer graphene, ultraflatbands exist in TMDCs for almost any small twist angles and their wave function becomes more localized when the rotation angle decreases. Lattice relaxation, pressure and local deformation can tune the width of the flatbands, as well as their localization. Furthermore, we investigate the effect of spin-orbit coupling on the flatbands and discover spin/orbital/valley locking at the minimum of the conduction band at the K point of the Brillouin zone. The ultraflatbands found in TMDCs with a range of rotation angle below $7^\circ$, may provide an ideal platform to study strongly correlated states.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tuning band gaps in twisted bilayer MoS$_2$

In the emerging world of twisted bilayer structures, the possible configurations are limitless, which enables for a rich landscape of electronic properties. In this paper, we focus on twisted bilayer transition metal dichalcogenides (TMDCs) and study its properties by means of an accurate tight-binding model. We build structures with different angles and find that the so-called flatbands emerge when the twist angle is sufficiently small (around 7.3$^{\circ}$). Interestingly, the band gap can be tuned up to a 2.2\% (51 meV) when the twist angle in the relaxed sample varies from 21.8$^{\circ}$ to 0.8$^{\circ}$. Furthermore, when looking at local density of states we find that the band gap varies locally along the moirè pattern due to the change in the coupling between layers at different sites. Finally, we also find that the system can suffer a transition from a semiconductor to a metal when a sufficiently strong electric field is applied. Our study can serve as a guide for the practical engineering of the TMDCs based optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Large-area, periodic, and tunable intrinsic pseudo-magnetic fields in low-angle twisted bilayer graphene

A properly strained graphene monolayer or bilayer is expected to harbour periodic pseudo-magnetic fields with high symmetry, yet to date, a convincing demonstration of such pseudo-magnetic fields has been lacking, especially for bilayer graphene. Here, we report the first definitive experimental proof for the existence of large-area, periodic pseudo-magnetic fields, as manifested by vortex lattices in commensurability with the moiré patterns of low-angle twisted bilayer graphene. The pseudo-magnetic fields are strong enough to confine the massive Dirac electrons into circularly localized pseudo-Landau levels, as observed by scanning tunneling microscopy/spectroscopy, and also corroborated by tight-binding calculations. We further demonstrate that the geometry, amplitude, and periodicity of the pseudo-magnetic field can be fine-tuned by both the rotation angle and heterostrain applied to the system. Collectively, the present study substantially enriches twisted bilayer graphene as a powerful enabling platform for exploration of new and exotic physical phenomena, including quantum valley Hall effects and quantum anomalous Hall effects.

0 citations0 reviewsNo code linkedOpen access