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Shengjun Yuan

Shengjun Yuan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.comp-phquant-phcond-mat.stat-mechcond-mat.dis-nncond-mat.str-el

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Published work

45 published item(s)

preprint2026arXiv

TBPLaS 2.0: a Tight-Binding Package for Large-scale Simulation

The common exact diagonalization-based techniques to solving tight-binding models suffer from O(N^2) and O(N^3) scaling with respect to model size in memory and CPU time, hindering their applications in large tight-binding models. On the contrary, the tight-binding propagation method (TBPM) can achieve linear scaling in both memory and CPU time, and is capable of handling large tight-binding models with billions of orbitals. In this paper, we introduce version 2.0 of TBPLaS, a package for large-scale simulation based on TBPM. This new version brings significant improvements with many new features. Existing Python/Cython modeling tools have been thoroughly optimized, and a compatible C++ implementation of the modeling tools is now available, offering efficiency enhancement of several orders. The solvers have been rewritten in C++ from scratch, with the efficiency enhanced by several times or even by an order of magnitude. The workflow of utilizing solvers has also been unified into a more comprehensive and consistent manner. New features include spin texture, Berry curvature and Chern number calculation, partial diagonalization for specific eigenvalues and eigenstates, analytical Hamiltonian, and GPU computing support. The documentation and tutorials have also been updated to the new version. In this paper, we discuss the revisions with respect to version 1.3 and demonstrate the new features. Benchmarks on modeling tools and solvers are also provided.

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preprint2022arXiv

Commensurate and incommensurate double moiré interference in twisted trilayer graphene

Twisted graphene multi-layers have been recently demonstrated to share several correlation-driven behaviours with twisted bilayer graphene. In general, the van Hove singularities (VHSs) can be used as a proxy of the tendency for correlated behaviours. In this paper, we adopt an atomistic method by combining tight-binding method with the semi-classical molecular dynamics to investigate the electronic structures of twisted trilayer graphene (TTG) with two independent twist angles. The two independent twist angles can lead to the interference of the moiré patterns forming a variety of commensurate/incommensurate complex supermoiré patterns. In particular, the lattice relaxation, twist angle and angle disorder effects on the VHS are discussed. We find that the lattice relaxation significantly influence the position and magnitude of the VHSs. In the supermoiré TTG, the moiré interference provides constructive or destructive effects depending on the relative twist angle. By modulating the two independent twist angles, novel superstructures, for instance, the Kagome-like lattice, could constructed via the moiré pattern. Moreover, we demonstrate that a slight change in twist angles (angle disorder) provides a significant suppression of the peak of the VHSs. Apart from the moiré length, the evolution of the VHSs and the LDOS mapping in real space could be used to identify the twist angles in the complicated TTG. In practice, our work could provide a guide for exploring the flat band behaviours in the supermoiré TTG experimentally.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Electronic properties and quantum transports in functionalized graphene Sierpinski carpet fractals

Recent progress in controllable functionalization of graphene surfaces enables the experimental realization of complex functionalized graphene nanostructures, such as Sierpinski carpet (SC) fractals. Herein, we model the SC fractals formed by hydrogen and fluorine functionalized patterns on graphene surfaces, namely, H-SC and F-SC, respectively. We then reveal their electronic properties and quantum transport features. From calculated results of the total and local density of state, we find that states in H-SC and F-SC have two characteristics: (i) low-energy states inside about |E/t|<1 (with t as the near-neighbor hopping) are localized inside free graphene regions due to the insulating properties of functionalized graphene regions, and (ii) high-energy states in F-SC have two special energy ranges including -2.3<E/t<-1.9 with localized holes only inside free graphene areas and 3<E/t<3.7 with localized electrons only inside fluorinated graphene areas. The two characteristics are further verified by the real-space distributions of normalized probability density. We analyze the fractal dimension of their quantum conductance spectra and find that conductance fluctuations in these structures follow the Hausdorff dimension. We calculate their optical conductivity and find that several additional conductivity peaks appear in high energy ranges due to the adsorbed H or F atoms.

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preprint2022arXiv

Flat-band plasmons in twisted bilayer transition metal dichalcogenides

Twisted bilayer transition metal dichalcogenides are ideal platforms to study flat-band phenomena. In this paper, we investigate flat-band plasmons in the hole-doped twisted bilayer MoS$_2$ (tb-MoS$_2$) by employing a full tight-binding model and the random phase approximation. When considering lattice relaxations in tb-MoS$_2$, the flat band is not separated from remote valence bands, which makes the contribution of interband transitions in transforming the plasmon dispersion and energy significantly different. In particular, low-damped and quasi-flat plasmons emerge if we only consider intraband transitions in the doped flat band, whereas a $\sqrt q$ plasmon dispersion emerges if we also take into account interband transitions between the flat band and remote bands. Furthermore, the plasmon energies are tunable with twist angles and doping levels. However, in a rigid sample that suffers no lattice relaxations, lower-energy quasi-flat plasmons and higher-energy interband plasmons can coexist. For rigid tb-MoS$_2$ with a high doping level, strongly enhanced interband transitions quench the quasi-flat plasmons. Based on the lattice relaxation and doping effects, we conclude that two conditions, the isolated flat band and a properly hole-doping level, are essential for observing the low-damped and quasi-flat plasmon mode in twisted bilayer transition metal dichalcogenides. We hope that our study on flat-band plasmons can be instructive for studying the possibility of plasmon-mediated superconductivity in twisted bilayer transition metal dichalcogenides in the future.

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preprint2021arXiv

An accurate description of the structural and electronic properties of twisted bilayer graphene-boron nitride heterostructures

Twisted bilayer graphene (TBG) has taken the spotlight in the condensed matter community since the discovery of correlated phases at the so-called magic angle. Interestingly, the role of a substrate on the electronic properties of TBG has not been completely elucidated. Up to now, most of the theoretical works carried out in order to understand this effect have been done using continuum models. In this work, we have gone one step ahead and have studied heterostructures of TBG and hBN using an atomistic tight-binding model together with semi-classical molecular dynamics to take into account relaxation effects. We found that the presence of the hBN substrate has significant effects to the band structure of TBG even in the case where TBG and hBN are not aligned. Specifically, the substrate induces a large mass gap and strong pseudomagnetic fields which break the layer degeneracy. Interestingly, such degeneracy can be recovered with a second hBN layer. Finally, we have also developed a continuum model that describes the tight-binding band structure. Our results show that a real-space tight-binding model in combination with semi-classical molecular dynamics are a powerful tool to study the electronic properties of supermoiré systems and that using this real-space methodology could be key in order to explain certain experimental results in which the effect of the substrate plays an important role.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Distribution of ripples in graphene membrane

Intrinsic ripples with various configurations and sizes were reported to affect the physical and chemical properties of 2D materials. By performing molecular dynamics simulations and theoretical analysis, we use two geometric models of the ripple shape to explore numerically the distribution of ripples in graphene membrane. We focus on the ratio of ripple height to its diameter (t/D) which was recently shown to be the most relevant for chemical activity of graphene membranes. Our result demonstrates that the ripple density decreases as the coefficient t/D increases, in a qualitative agreement with the Boltzmann distribution derived analytically from the bending energy of the membrane. Our theoretical study provides also specific quantitative information on the ripple distribution in graphene and gives new insights applicable to other 2D materials.

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preprint2021arXiv

Electronic and Optical properties of transition metal dichalcogenides under symmetric and asymmetric field-effect doping

Doping via electrostatic gating is a powerful and widely used technique to tune the electron densities in layered materials. The microscopic details of how these setups affect the layered material are, however, subtle and call for careful theoretical treatments. Using semiconducting monolayers of transition metal dichalcogenides (TMDs) as prototypical systems affected by electrostatic gating, we show that the electronic and optical properties change indeed dramatically when the gating geometry is properly taken into account. This effect is implemented by a self-consistent calculation of the Coulomb interaction between the charges in different sub-layers within the tight-binding approximation. Thereby we consider both, single- and double-sided gating. Our results show that, at low doping levels of $10^{13}$ cm$^{-2}$, the electronic bands of monolayer TMDs shift rigidly for both types of gating, and subsequently undergo a Lifshitz transition. When approaching the doping level of $10^{14}$ cm$^{-2}$, the band structure changes dramatically, especially in the case of single-sided gating where we find that monolayer \ce{MoS2} and \ce{WS2} become indirect gap semiconductors. The optical conductivities calculated within linear response theory also show clear signatures of these doping-induced band structure renormalizations. Our numerical results based on light-weighted tight-binding models indicate the importance of electronic screening in doped layered structures, and pave the way for further understanding gated super-lattice structures formed by mutlilayers with extended Moiré pattern.

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preprint2021arXiv

Interlayer hybridization in graphene quasicrystal and other bilayer graphene systems

The incommensurate 30$^{\circ}$ twisted bilayer graphene (BG) possesses both relativistic Dirac fermions and quasiperiodicity with 12-fold rotational symmetry arising from the interlayer interaction [\href{https://science.sciencemag.org/content/361/6404/782}{Ahn et al., Science \textbf{361}, 782 (2018)} and \href{https://www.pnas.org/content/115/27/6928}{Yao et al., Proc. Natl. Acad. Sci. \textbf{115}, 6928 (2018)}]. Understanding how the interlayer states interact with each other is of vital importance for identifying and subsequently engineering the quasicrystalline order in the layered structures. Herein, via symmetry and group representation theory we unravel the interlayer hybridization selection rules governing the interlayer coupling in both untwisted and twisted BG systems. Compared with the only allowed equivalent hybridization in $D_{6h}$ untwisted BG, $D_6$ twisted BG permits equivalent and mixed hybridizations, and $D_{6d}$ graphene quasicrystal allows both equivalent and non-equivalent hybridizations. The energy-dependent hybridization strengths in graphene quasicrystal and $D_6$ twisted BG show two remarkable characteristics: (i) near the Fermi level the weak hybridization owing to the relatively large energy difference between Dirac bands from top and bottom layers, and (ii) in high-energy regions the electron-hole asymmetry of hybridization strength with stronger interlayer coupling for holes, which arises from the non-nearest-neighbor interlayer hoppings and the wave-function phase difference between paring states. These hybridization-generated band structures and their hybridization strength characteristics are verified by the calculated optical conductivity spectra. Our theoretical study paves a way for revealing the interlayer hybridization in van der Waals layered systems.

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preprint2021arXiv

Realizing One-dimensional Metallic States in Graphene via Periodically Coupled Zeroth Pseudo-Landau Levels

Strain-induced pseudo-magnetic fields can mimic real magnetic fields to generate a zero-magnetic-field analogue of the Landau levels (LLs), i.e., the pseudo-LLs, in graphene. The distinct nature of the pseudo-LLs enables one to realize novel electronic states beyond that can be feasible with real LLs. Here, we report the realization of one-dimensional (1D) metallic states, which can be described well by the Su-Schrieffer-Heeger model, in graphene via periodically coupled zeroth pseudo-LLs. In our experiment, nanoscale strained structures embedded with pseudo-LLs are generated periodically along 1D channel of suspended graphene monolayer. Our experiments demonstrate that the zeroth pseudo-LLs of these strained structures are coupled to form metallic states, exhibiting a serpentine pattern that snakes back and forth along the 1D suspended graphene monolayer. These results are verified theoretically by large-scale tight-binding calculations of the strained samples. Our result provides a new pathway to realize novel quantum states and engineer the electronic properties of graphene by using the localized pseudo-LLs as building blocks.

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preprint2020arXiv

Electron-phonon interaction and zero-field charge carrier transport in the nodal-line semimetal ZrSiS

We study electron-phonon interaction and related transport properties of nodal-line semimetal ZrSiS using first-principles calculations. We find that ZrSiS is characterized by a weak electron-phonon coupling on the order of 0.1, which is almost energy independent. The main contribution to the electron-phonon coupling originates from long-wavelength optical phonons, causing no significant renormalization of the electron spectral function. At the charge neutrality point, we find that electrons and holes provide a comparable contribution to the scattering rate. The phonon-limited resistivity calculated within the Boltzmann transport theory is found to be strongly direction-dependent with the ratio between out-of-plane and in-plane directions being $ρ_{zz}/ρ_{xx}\sim 7.5$, mainly determined by the anisotropy of carrier velocities. We estimate zero-field resistivity to be $ρ_{xx}\approx12$ $μΩ$ cm at 300 K, which is in good agreement with experimental data. Relatively small resistivity in ZrSiS can be attributed to a combination of weak electron-phonon coupling and high carrier velocities.

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preprint2020arXiv

Electronic structure of 30° twisted double bilayer graphene

In this paper, the electronic properties of 30° twisted double bilayer graphene, which loses the translational symmetry due to the incommensurate twist angle, are studied by means of the tight-binding approximation. We demonstrate the interlayer decoupling in the low-energy region from various electronic properties, such as the density of states, effective band structure, optical conductivity and Landau level spectrum. However, at Q points, the interlayer coupling results in the appearance of new Van Hove singularities in the density of states, new peaks in the optical conductivity and importantly the 12-fold-symmetry-like electronic states. The k-space tight-binding method is adopted to explain this phenomenon. The electronic states at Q points show the charge distribution patterns more complex than the 30° twisted bilayer graphene due to the symmetry decrease. These phenomena appear also in the 30° twisted interface between graphene monolayer and AB stacked bilayer.

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preprint2020arXiv

How Substitutional Point Defects in Two-Dimensional WS$_2$ Induce Charge Localization, Spin-Orbit Splitting, and Strain

Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided incorporation of functional foreign atoms. The first step towards impurity control is the identification of defects and assessment of their electronic properties. Here, we present a comprehensive study of point defects in monolayer tungsten disulfide (WS$_2$) grown by chemical vapor deposition (CVD) using scanning tunneling microscopy/spectroscopy, CO-tip noncontact atomic force microscopy, Kelvin probe force spectroscopy, density functional theory, and tight-binding calculations. We observe four different substitutional defects: chromium (Cr$_{\text{W}}$) and molybdenum (Mo$_{\text{W}}$) at a tungsten site, oxygen at sulfur sites in both bottom and top layers (O$_{\text{S}}$ top/bottom), as well as two negatively charged defects (CDs). Their electronic fingerprints unambiguously corroborate the defect assignment and reveal the presence or absence of in-gap defect states. The important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS$_2$ as reported here will guide future efforts of targeted defect engineering and doping of TMDs.

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preprint2020arXiv

Linearized spectral decimation in fractals

In this article we study the energy level spectrum of fractals which have block-hierarchical structures. We develop a method to study the spectral properties in terms of linearization of spectral decimation procedure and verify it numerically. Our approach provides qualitative explanations for various spectral properties of self-similar graphs within the theory of dynamical systems, including power-law level-spacing distribution, smooth density of states and effective chaotic regime.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Multi-ultraflatbands tunability and effect of spin-orbit coupling in twisted bilayer transition metal dichalcogenides

Ultraflatbands that have been theoretically and experimentally detected in a bunch of van der Waals stacked materials showing some peculiar properties, for instance, highly localized electronic states and enhanced electron-electron interactions. In this Letter, using an accurate tight-binding model, we study the formation and evolution of ultraflatbands in transition metal dichalcogenides (TMDCs) under low rotation angles. We find that, unlike in twisted bilayer graphene, ultraflatbands exist in TMDCs for almost any small twist angles and their wave function becomes more localized when the rotation angle decreases. Lattice relaxation, pressure and local deformation can tune the width of the flatbands, as well as their localization. Furthermore, we investigate the effect of spin-orbit coupling on the flatbands and discover spin/orbital/valley locking at the minimum of the conduction band at the K point of the Brillouin zone. The ultraflatbands found in TMDCs with a range of rotation angle below $7^\circ$, may provide an ideal platform to study strongly correlated states.

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preprint2020arXiv

Pressure and electric field dependence of quasicrystalline electronic states in 30$^{\circ}$ twisted bilayer graphene

30$^{\circ}$ twisted bilayer graphene demonstrates the quasicrystalline electronic states with 12-fold symmetry. These states are however far away from the Fermi level, which makes conventional Dirac fermion behavior dominating the low energy spectrum in this system. By using tight-binding approximation, we study the effect of external pressure and electric field on the quasicrystalline electronic states. Our results show that by applying the pressure perpendicular to graphene plane one can push the quasicrystalline electronic states towards the Fermi level. Then, the electron or hole doping of the order of $\sim$ $4\times10^{14}$ $cm^{-2}$ is sufficient for the coincidence of the Fermi level with these quasicrystalline states. Moreover, our study indicates that applying the electric field perpendicular to the graphene plane can destroy the 12-fold symmetry of these states and break the energy degeneracy of the 12-wave states, and it is easier to reach this in the conduction band than in the valence band. Importantly, the application of the pressure can recover the 12-fold symmetry of these states to some extent against the electric field. We propose a hybridization picture which can explain all these phenomena.

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preprint2020arXiv

Strain-induced semiconductor to metal transition in MA2Z4 bilayers

Very recently, a new type of two-dimensional layered material MoSi2N4 has been fabricated, which is semiconducting with weak interlayer interaction, high strength, and excellent stability. We systematically investigate theoretically the effect of vertical strain on the electronic structure of MA2Z4 (M=Ti/Cr/Mo, A=Si, Z=N/P) bilayers. Taking bilayer MoSi2N4 as an example, our first principle calculations show that its indirect band gap decreases monotonically as the vertical compressive strain increases. Under a critical strain around 22%, it undergoes a transition from semiconductor to metal. We attribute this to the opposite energy shift of states in different layers, which originates from the built-in electric field induced by the asymmetric charge transfer between two inner sublayers near the interface. Similar semiconductor to metal transitions are observed in other strained MA2Z4 bilayers, and the estimated critical pressures to realize such transitions are within the same order as semiconducting transition metal dichalcogenides. The semiconductor to metal transitions observed in the family of MA2Z4 bilayers present interesting possibilities for strain-induced engineering of their electronic properties.

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preprint2020arXiv

Tuning band gaps in twisted bilayer MoS$_2$

In the emerging world of twisted bilayer structures, the possible configurations are limitless, which enables for a rich landscape of electronic properties. In this paper, we focus on twisted bilayer transition metal dichalcogenides (TMDCs) and study its properties by means of an accurate tight-binding model. We build structures with different angles and find that the so-called flatbands emerge when the twist angle is sufficiently small (around 7.3$^{\circ}$). Interestingly, the band gap can be tuned up to a 2.2\% (51 meV) when the twist angle in the relaxed sample varies from 21.8$^{\circ}$ to 0.8$^{\circ}$. Furthermore, when looking at local density of states we find that the band gap varies locally along the moirè pattern due to the change in the coupling between layers at different sites. Finally, we also find that the system can suffer a transition from a semiconductor to a metal when a sufficiently strong electric field is applied. Our study can serve as a guide for the practical engineering of the TMDCs based optoelectronic devices.

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preprint2019arXiv

Hall conductivity of Sierpinski carpet

We calculate the Hall conductivity of a Sierpinski carpet using Kubo-Bastin formula. The quantization of Hall conductivity disappears when we increase the depth of the fractal. The Hall conductivity is no more proportional to the Chern number. Nevertheless, these quantities behave in a similar way showing some reminiscence of a topological nature of the Hall conductivity. We also study numerically the bulk-edge correspondence and find that the edge states become less manifested when the depth of Sierpinski carpet is increased.

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preprint2019arXiv

Large-area, periodic, and tunable intrinsic pseudo-magnetic fields in low-angle twisted bilayer graphene

A properly strained graphene monolayer or bilayer is expected to harbour periodic pseudo-magnetic fields with high symmetry, yet to date, a convincing demonstration of such pseudo-magnetic fields has been lacking, especially for bilayer graphene. Here, we report the first definitive experimental proof for the existence of large-area, periodic pseudo-magnetic fields, as manifested by vortex lattices in commensurability with the moiré patterns of low-angle twisted bilayer graphene. The pseudo-magnetic fields are strong enough to confine the massive Dirac electrons into circularly localized pseudo-Landau levels, as observed by scanning tunneling microscopy/spectroscopy, and also corroborated by tight-binding calculations. We further demonstrate that the geometry, amplitude, and periodicity of the pseudo-magnetic field can be fine-tuned by both the rotation angle and heterostrain applied to the system. Collectively, the present study substantially enriches twisted bilayer graphene as a powerful enabling platform for exploration of new and exotic physical phenomena, including quantum valley Hall effects and quantum anomalous Hall effects.

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preprint2019arXiv

Tunable magneto-optical properties of single-layer tin diselenide: From GW approximation to large-scale tight-binding calculations

A parameterized tight-binding (TB) model based on the first-principles GW calculations is developed for single layer tin diselenide (SnSe$_2$) and used to study its electronic and optical properties under external magnetic field. The truncated model is derived from six maximally localized wannier orbitals on Se site, which accurately describes the quasi-particle electronic states of single layer SnSe$_2$ in a wide energy range. The quasi-particle electronic states are dominated by the hoppings between nearest wannier orbitals ($t_1$-$t_6$). Our numerical calculation shows that, due to the electron-hole asymmetry, two sets of Landau Level spectrum are obtained when a perpendicular magnetic field is applied. The Landau Level spectrum follows linear dependence on the level index and magnetic field, exhibiting properties of two-dimensional electron gas in traditional semiconductors. The optical conductivity calculation shows that the optical gap is very close to the GW value, and can be tuned by external magnetic field. Our proposed TB model can be used for further exploring the electronic, optical, and transport properties of SnSe$_2$, especially in the presence of external magnetic fields.

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preprint2016arXiv

Quantum Hall effect and semiconductor to semimetal transition in biased black phosphorus

We study the quantum Hall effect of 2D electron gas in black phosphorus in the presence of perpendicular electric and magnetic fields. In the absence of a bias voltage, the external magnetic field leads to a quantization of the energy spectrum into equidistant Landau levels, with different cyclotron frequencies for the electron and hole bands. The applied voltage reduces the band gap, and eventually a semiconductor to semimetal transition takes place. This nontrivial phase is characterized by the emergence of a pair of Dirac points in the spectrum. As a consequence, the Landau levels are not equidistant anymore, but follow the $\varepsilon_n\propto \sqrt{nB}$ characteristic of Dirac crystals as graphene. By using the Kubo-Bastin formula in the context of the kernel polynomial method, we compute the Hall conductivity of the system. We obtain a $σ_{xy}\propto 2n$ quantization of the Hall conductivity in the gapped phase (standard quantum Hall effect regime), and a $σ_{xy}\propto 4(n+1/2)$ quantization in the semimetalic phase, characteristic of Dirac systems with non-trivial topology.

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preprint2015arXiv

Effect of structural relaxation on the electronic structure of graphene on hexagonal boron nitride

We performed calculations of electronic, optical and transport properties of graphene on hBN with realistic moiré patterns. The latter are produced by structural relaxation using a fully atomistic model. This relaxation turns out to be crucially important for electronic properties. We describe experimentally observed features such as additional Dirac points and the "Hofstadter butterfly" structure of energy levels in a magnetic field. We find that the electronic structure is sensitive to many-body renormalization of the local energy gap.

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preprint2015arXiv

Electronic Structures and Optical Properties of Partially and Fully Fluorinated Graphene

In this letter we study the electronic structures and optical properties of partially and fully fluorinated graphene by a combination of abinitio G0W0 calculations and large-scale multi-orbital tight-binding simulations. We find that for partially fluorinated graphene, the appearance of paired fluorine atoms is more favorable than unpaired atoms. We also show that different types of structural disorder, such as carbon vacancies, fluorine vacancies, fluorine vacancy-clusters and fluorine armchair- and zigzag-clusters, will introduce different types of midgap states and extra excitations within the optical gap. Furthermore we argue that the local formation of $sp^3$ bonds upon fluorination can be distinguished from other disorder inducing mechanisms which do not destroy the $sp^2$ hybrid orbitals by measuring the polarization rotation of passing polarized light.

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preprint2015arXiv

Fingerprints of disorder in graphene

We present a systematic study of the electronic, transport and optical properties of disordered graphene including the next-nearest-neighbor hopping. We show that this hopping has a non-negligible effect on resonant scattering but is of minor importance for long-range disorder such as charged impurities, random potentials or hoppings induced by strain fluctuations. Different types of disorders can be recognized by their fingerprints appearing in the profiles of dc conductivity, carrier mobility, optical spectroscopy and Landau level spectrum. The minimum conductivity $4e^{2}/h$ found in the experiments is dominated by long-range disorder and the value of $4e^{2}/πh$ is due to resonant scatterers only.

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preprint2015arXiv

Modeling Klein tunneling and caustics of electron waves in graphene

We employ the tight-binding propagation method to study Klein tunneling and quantum interference in large graphene systems. With this efficient numerical scheme, we model the propagation of a wave packet through a potential barrier and determine the tunneling probability for different incidence angles. We consider both sharp and smooth potential barriers in n-p-n and n-n' junctions and find good agreement with analytical and semiclassical predictions. When we go outside the Dirac regime, we observe that sharp n-p junctions no longer show Klein tunneling because of intervalley scattering. However, this effect can be suppressed by considering a smooth potential. Klein tunneling holds for potentials changing on the scale much larger than the interatomic distance. When the energies of both the electrons and holes are above the Van Hove singularity, we observe total reflection for both sharp and smooth potential barriers. Furthermore, we consider caustic formation by a two-dimensional Gaussian potential. For sufficiently broad potentials we find a good agreement between the simulated wave density and the classical electron trajectories.

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preprint2015arXiv

Screening and plasmons in pure and disordered single- and bilayer black phosphorus

We study collective plasmon excitations and screening of disordered single- and bilayer black phosphorus beyond the low energy continuum approximation. The dynamical polarizability of phosphorene is computed using a tight-binding model that properly accounts for the band structure in a wide energy range. Electron-electron interaction is considered within the Random Phase Approximation. Damping of the plasmon modes due to different kinds of disorder, such as resonant scatterers and long-range disorder potentials, is analyzed. We further show that an electric field applied perpendicular to bilayer phosphorene can be used to tune the dispersion of the plasmon modes. For sufficiently large electric field, the bilayer BP enters in a topological phase with a characteristic plasmon spectrum, which is gaped in the armchair direction.

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preprint2015arXiv

Toward a realistic description of multilayer black phosphorus: from $GW$ approximation to large-scale tight-binding simulations

We provide a tight-binding model parametrization for black phosphorus (BP) with an arbitrary number of layers. The model is derived from partially self-consistent $GW_0$ approach, where the screened Coulomb interaction $W_0$ is calculated within the random phase approximation on the basis of density functional theory. We thoroughly validate the model by performing a series of benchmark calculations, and determine the limits of its applicability. The application of the model to the calculations of electronic and optical properties of multilayer BP demonstrates good quantitative agreement with \emph{ab initio} results in a wide energy range. We also show that the proposed model can be easily extended for the case of external fields, yielding the results consistent with those obtained from first principles. The model is expected to be suitable for a variety of realistic problems related to the electronic properties of multilayer BP including different kinds of disorder, external fields, and many-body effects.

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preprint2015arXiv

Transport and optical properties of an electron gas in a Sierpinski carpet

Recent progress in the design and fabrication of artificial two-dimensional (2D) materials paves the way for the experimental realization of electron systems moving on plane fractals. In this work, we present the results of computer simulations for the conductance and optical absorption spectrum of a 2D electron gas roaming on a Sierpinski carpet, i.e. a plane fractal with Hausdorff dimension intermediate between one and two. We find that the conductance is sensitive to the spatial location of the leads and that it displays fractal fluctuations whose dimension is compatible with the Hausdorff dimension of the sample. Very interestingly, electrons in this fractal display a broadband optical absorption spectrum, which possesses sharp "molecular" peaks at low photon energies.

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preprint2015arXiv

Transport and Optical Properties of Single- and Bilayer Black Phosphorus with Defects

We study the electronic and optical properties of single- and bilayer black phosphorus with shortand long-range defects by using the tight-binding propagation method. Both types of defect states are localized and induce a strong scattering of conduction states reducing significantly the charge carrier mobility. In contrast to properties of pristine samples, the anisotropy of defect-induced optical excitations is suppressed due to the isotropic nature of the defects. We also investigate the Landau level spectrum and magneto-optical conductivity, and find that the discrete Landau levels are sublinearly dependent on the magnetic field and energy level index, even at low defect concentrations.

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preprint2014arXiv

Optical transmittance of multilayer graphene

We study the optical transmittance of multilayer graphene films up to 65 layers thick. By combing large-scale tight-binding simulation and optical measurement on CVD multilayer graphene, the optical transmission through graphene films in the visible region is found to be solely determined by the number of graphene layers. We argue that the optical transmittance measurement is more reliable in the determination of the number of layers than the commonly used Raman Spectroscopy. Moreover, optical transmittance measurement can be applied also to other 2D materials with weak van der Waals interlayer interaction.

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preprint2013arXiv

Quantum Decoherence Scaling with Bath Size: Importance of Dynamics, Connectivity, and Randomness

The decoherence of a quantum system $S$ coupled to a quantum environment $E$ is considered. For states chosen uniformly at random from the unit hypersphere in the Hilbert space of the closed system $S+E$ we derive a scaling relationship for the sum of the off-diagonal elements of the reduced density matrix of $S$ as a function of the size $D_E$ of the Hilbert space of $E$. This sum decreases as $1/\sqrt{D_E}$ as long as $D_E\gg 1$. This scaling prediction is tested by performing large-scale simulations which solve the time-dependent Schr{ö}dinger equation for a ring of spin-1/2 particles, four of them belonging to $S$ and the others to $E$. Provided that the time evolution drives the whole system from the initial state toward a state which has similar properties as states belonging to the class of quantum states for which we derived the scaling relationship, the scaling prediction holds. For systems which do not exhibit this feature, it is shown that increasing the complexity (in terms of connections) of the environment or introducing a small amount of randomness in the interactions in the environment suffices to observe the predicted scaling behavior.

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preprint2013arXiv

Screening and Collective Modes in Disordered Graphene Antidot Lattices

The excitation spectrum and the collective modes of graphene antidot lattices (GALs) are studied in the context of a $π$-band tight-binding model. The dynamical polarizability and dielectric function are calculated within the random phase approximation. The effect of different kinds of disorder, such as geometric and chemical disorder, are included in our calculations. We highlight the main differences of GALs with respect to single-layer graphene (SLG). Our results show that, in addition to the well-understood bulk plasmon in doped samples, inter-band plasmons appear in GALs. We further show that the static screening properties of undoped and doped GALs are quantitatively different from SLG.

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preprint2012arXiv

Electronic Properties of Disordered Graphene Antidot Lattices

Regular nanoscale perforations in graphene (graphene antidot lattices, GAL) are known to lead to a gap in the energy spectrum, thereby paving a possible way towards many applications. This theoretical prediction relies on a perfect placement of identical perforations, a situation not likely to occur in the laboratory. Here, we present a systematic study of the effects of disorder in GALs. We consider both geometric and chemical disorder, and evaluate the density-of-states as well as the optical conductivity of disordered GALs. The theoretical method is based on an efficient algorithm for solving the time-dependent Schr{ö}dinger equation in a tight-binding representation of the graphene sheet [S. Yuan et al., Phys. Rev. B 82, 115448 (2010)], which allows us to consider GALs consisting of 6400 $\times$ 6400 carbon atoms. The central conclusion for all kinds of disorder is that the gaps found for pristine GALs do survive at a considerable amount of disorder, but disappear for very strong disorder. Geometric disorder is more detrimental to gap formation than chemical disorder. The optical conductivity shows a low-energy tail below the pristine GAL band gap due to disorder-introduced transitions.

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preprint2012arXiv

Electronic, Magnetic and Transport Properties of Graphene Ribbons Terminated by Nanotubes

We study by density functional and large scale tight-binding transport calculations the electronic structure, magnetism and transport properties of the recently proposed graphene ribbons with edges rolled to form nanotubes. Edges with armchair nanotubes present magnetic moments localized either in the tube or the ribbon and metallic or half-metallic character, depending on the symmetry of the junction. These properties have potential for spin valve and spin filter devices with advantages over other proposed systems. Edges with zigzag nanotubes are either metallic or semiconducting without affecting the intrinsic mobility of the ribbon. By varying the type and size of the nanotubes and ribbons offers the possibility to tailor the magnetic and transport properties, making these systems very promising for applications.

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preprint2012arXiv

Enhanced Screening in Chemically Functionalized Graphene

Resonant scatterers such as hydrogen adatoms can strongly enhance the low energy density of states in graphene. Here, we study the impact of these impurities on the electronic screening. We find a two-faced behavior: Kubo formula calculations reveal an increased dielectric function $\varepsilon$ upon creation of midgap states but no metallic divergence of the static $\varepsilon$ at small momentum transfer $q\to 0$. This bad metal behavior manifests also in the dynamic polarization function and can be directly measured by means of electron energy loss spectroscopy. A new length scale $l_c$ beyond which screening is suppressed emerges, which we identify with the Anderson localization length.

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preprint2012arXiv

Polarization of graphene in a strong magnetic field beyond the Dirac cone approximation

In this paper we study the excitation spectrum of graphene in a strong magnetic field, beyond the Dirac cone approximation. The dynamical polarizability is obtained using a full $π$-band tight-binding model where the effect of the magnetic field is accounted for by means of the Peierls substitution. The effect of electron-electron interaction is considered within the random phase approximation, from which we obtain the dressed polarization function and the dielectric function. The range of validity of the Landau level quantization within the continuum approximation is studied, as well as the non-trivial quantization of the spectrum around the Van Hove singularity. We further discuss the effect of disorder, which leads to a smearing of the absorption peaks, and temperature, which activates additional inter-Landau level transitions induced by the Fermi distribution function.

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preprint2011arXiv

Excitation spectrum and high energy plasmons in single- and multi-layer graphene

In this paper we study the excitation spectrum of single- and multi-layer graphene beyond the Dirac cone approximation. The dynamical polarizability of graphene is computed using a full $π$-band tight-binding model, considering the possibility of inter-layer hopping in the calculation. The effect of electron-electron interaction is considered within the random phase approximation. We further discuss the effect of disorder in the spectrum, which leads to a smearing of the absorption peaks. Our results show a redshift of the $π$-plasmon dispersion of single-layer graphene with respect to graphite, in agreement with experimental results. The inclusion of inter-layer hopping in the kinetic Hamiltonian of multi-layer graphene is found to be very important to properly capture the low energy region of the excitation spectrum.

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preprint2011arXiv

Landau Level Spectrum of ABA- and ABC-stacked Trilayer Graphene

We study the Landau level spectrum of ABA- and ABC-stacked trilayer graphene. We derive analytic low energy expressions for the spectrum, the validity of which is confirmed by comparison to a π-band tight-binding calculation of the density of states on the honeycomb lattice. We further study the effect of a perpendicular electric field on the spectrum, where a zero-energy plateau appears for ABC stacking order, due to the opening of a gap at the Dirac point, while the ABA-stacked trilayer graphene remains metallic. We discuss our results in the context of recent electronic transport experiments. Furthermore, we argue that the expressions obtained can be useful in the analysis of future measurements of cyclotron resonance of electrons and holes in trilayer graphene.

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preprint2011arXiv

Optical conductivity of disordered graphene beyond the Dirac cone approximation

In this paper we systemically study the optical conductivity and density of states of disorded graphene beyond the Dirac cone approximation. The optical conductivity of graphene is computed by using the Kubo formula, within the framework of a full π-band tight-binding model. Different types of non-correlated and correlated disorders are considered, such as random or Gaussian potentials, random or Gaussian nearest-neighbor hopping parameters, randomly distributed vacancies or their clusters, and random adsorbed hydrogen atoms or their clusters. For a large enough concentration of resonant impurities, a new peak in the optical conductivity is found, associated to transitions between the midgap states and the Van Hove singularities of the main π-band. We further discuss the effect of doping on the spectrum, and find that small amounts of resonant impurities are enough to obtain a background contribution to the conductivity in the infra-red part of the spectrum, in agreement with recent experiments.

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preprint2010arXiv

Approach to equilbrium in nano-scale systems at finite temperatur

We study the time evolution of the reduced density matrix of a system of spin-1/2 particles interacting with an environment of spin-1/2 particles. The initial state of the composite system is taken to be a product state of a pure state of the system and a pure state of the environment. The latter pure state is prepared such that it represents the environment at a given finite temperature in the canonical ensemble. The state of the composite system evolves according to the time-dependent Schr{ö}dinger equation, the interaction creating entanglement between the system and the environment. It is shown that independent of the strength of the interaction and the initial temperature of the environment, all the eigenvalues of the reduced density matrix converge to their stationary values, implying that also the entropy of the system relaxes to a stationary value. We demonstrate that the difference between the canonical density matrix and the reduced density matrix in the stationary state increases as the initial temperature of the environment decreases. As our numerical simulations are necessarily restricted to a modest number of spin-1/2 particles ($<36$), but do not rely on time-averaging of observables nor on the assumption that the coupling between system and environment is weak, they suggest that the stationary state of the system directly follows from the time evolution of a pure state of the composite system, even if the size of the latter cannot be regarded as being close to the thermodynamic limit.

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preprint2010arXiv

Corpuscular model of two-beam interference and double-slit experiments with single photons

We introduce an event-based corpuscular simulation model that reproduces the wave mechanical results of single-photon double slit and two-beam interference experiments and (of a one-to-one copy of an experimental realization) of a single-photon interference experiment with a Fresnel biprism. The simulation comprises models that capture the essential features of the apparatuses used in the experiment, including the single-photon detectors recording individual detector clicks. We demonstrate that incorporating in the detector model, simple and minimalistic processes mimicking the memory and threshold behavior of single-photon detectors is sufficient to produce multipath interference patterns. These multipath interference patterns are built up by individual particles taking one single path to the detector where they arrive one-by-one. The particles in our model are not corpuscular in the standard, classical physics sense in that they are information carriers that exchange information with the apparatuses of the experimental set-up. The interference pattern is the final, collective outcome of the information exchanges of many particles with these apparatuses. The interference patterns are produced without making reference to the solution of a wave equation and without introducing signalling or non-local interactions between the particles or between different detection points on the detector screen.

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preprint2010arXiv

Decoherence and Thermalization of Quantum Spin Systems

In this review, we discuss the decoherence and thermalization of a quantum spin system interacting with a spin bath environment, by numerically solving the time-dependent Schrödinger equation of the whole system. The effects of the topologic structure and the initial state of the environment on the decoherence of the two-spin and many-spin system are discussed. The role of different spin-spin coupling is considered. We show under which conditions the environment drives the reduced density matrix of the system to a fully decoherent state, and how the diagonal elements of the reduced density matrix approach those expected for the system in the microcanonical or canonical ensemble, depending on the character of the additional integrals of motion. Our demonstration does not rely on time-averaging of observables nor does it assume that the coupling between system and bath is weak. Our findings show that the microcanonical distribution (in each eigenenergy subspace) and canonical ensemble are states that may result from pure quantum dynamics, suggesting that quantum mechanics may be regarded as the foundation of quantum statistical mechanics. Furthermore, our numerical results show that a fully decoherent quantum system prefers to stay in an equilibrium state with a maximum entropy, indicating the validity of the second law of thermodynamics in the decoherence process.

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preprint2010arXiv

Electronic Transport in Disordered Bilayer and Trilayer Graphene

We present a detailed numerical study of the electronic transport properties of bilayer and trilayer graphene within a framework of single-electron tight-binding model. Various types of disorder are considered, such as resonant (hydrogen) impurities, vacancies, short- or long-range Gaussian random potentials, and Gaussian random nearest neighbor hopping. The algorithms are based on the numerical solution of the time-dependent Schr ödinger equation and applied to calculate the density of states and conductivities (via the Kubo formula) of large samples containing millions of atoms. In the cases under consideration, far enough from the neutrality point, depending on the strength of disorders and the stacking sequence, a linear or sublinear electron-density dependent conductivity is found. The minimum conductivity $σ_{\min}\approx 2e^{2}/h$ (per layer) at the charge neutrality point is the same for bilayer and trilayer graphene, independent of the type of the impurities, but the plateau of minimum conductivity around the neutrality point is only observed in the presence of resonant impurities or vacancies, originating from the formation of the impurity band.

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preprint2010arXiv

Modeling electronic structure and transport properties of graphene with resonant scattering centers

We present a detailed numerical study of the electronic properties of single-layer graphene with resonant ("hydrogen") impurities and vacancies within a framework of noninteracting tight-binding model on a honeycomb lattice. The algorithms are based on the numerical solution of the time-dependent Schrödinger equation and applied to calculate the density of states, \textit{quasieigenstates}, AC and DC conductivities of large samples containing millions of atoms. Our results give a consistent picture of evolution of electronic structure and transport properties of functionalized graphene in a broad range of concentration of impurities (from graphene to graphane), and show that the formation of impurity band is the main factor determining electrical and optical properties at intermediate impurity concentrations, together with a gap opening when approaching the graphane limit.

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preprint2009arXiv

Origin of the Canonical Ensemble: Thermalization with Decoherence

We solve the time-dependent Schrodinger equation for the combination of a spin system interacting with a spin bath environment. In particular, we focus on the time development of the reduced density matrix of the spin system. Under normal circumstances we show that the environment drives the reduced density matrix to a fully decoherent state, and furthermore the diagonal elements of the reduced density matrix approach those expected for the system in the canonical ensemble. We show one exception to the normal case is if the spin system cannot exchange energy with the spin bath. Our demonstration does not rely on time-averaging of observables nor does it assume that the coupling between system and bath is weak. Our findings show that the canonical ensemble is a state that may result from pure quantum dynamics, suggesting that quantum mechanics may be regarded as the foundation of quantum statistical mechanics.

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