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Researcher profile

Shengjun Yuan

Shengjun Yuan contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.dis-nncond-mat.str-elphysics.comp-phquant-phcond-mat.stat-mech

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Published work

20 published item(s)

preprint2026arXiv

TBPLaS 2.0: a Tight-Binding Package for Large-scale Simulation

The common exact diagonalization-based techniques to solving tight-binding models suffer from O(N^2) and O(N^3) scaling with respect to model size in memory and CPU time, hindering their applications in large tight-binding models. On the contrary, the tight-binding propagation method (TBPM) can achieve linear scaling in both memory and CPU time, and is capable of handling large tight-binding models with billions of orbitals. In this paper, we introduce version 2.0 of TBPLaS, a package for large-scale simulation based on TBPM. This new version brings significant improvements with many new features. Existing Python/Cython modeling tools have been thoroughly optimized, and a compatible C++ implementation of the modeling tools is now available, offering efficiency enhancement of several orders. The solvers have been rewritten in C++ from scratch, with the efficiency enhanced by several times or even by an order of magnitude. The workflow of utilizing solvers has also been unified into a more comprehensive and consistent manner. New features include spin texture, Berry curvature and Chern number calculation, partial diagonalization for specific eigenvalues and eigenstates, analytical Hamiltonian, and GPU computing support. The documentation and tutorials have also been updated to the new version. In this paper, we discuss the revisions with respect to version 1.3 and demonstrate the new features. Benchmarks on modeling tools and solvers are also provided.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Commensurate and incommensurate double moiré interference in twisted trilayer graphene

Twisted graphene multi-layers have been recently demonstrated to share several correlation-driven behaviours with twisted bilayer graphene. In general, the van Hove singularities (VHSs) can be used as a proxy of the tendency for correlated behaviours. In this paper, we adopt an atomistic method by combining tight-binding method with the semi-classical molecular dynamics to investigate the electronic structures of twisted trilayer graphene (TTG) with two independent twist angles. The two independent twist angles can lead to the interference of the moiré patterns forming a variety of commensurate/incommensurate complex supermoiré patterns. In particular, the lattice relaxation, twist angle and angle disorder effects on the VHS are discussed. We find that the lattice relaxation significantly influence the position and magnitude of the VHSs. In the supermoiré TTG, the moiré interference provides constructive or destructive effects depending on the relative twist angle. By modulating the two independent twist angles, novel superstructures, for instance, the Kagome-like lattice, could constructed via the moiré pattern. Moreover, we demonstrate that a slight change in twist angles (angle disorder) provides a significant suppression of the peak of the VHSs. Apart from the moiré length, the evolution of the VHSs and the LDOS mapping in real space could be used to identify the twist angles in the complicated TTG. In practice, our work could provide a guide for exploring the flat band behaviours in the supermoiré TTG experimentally.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Electronic properties and quantum transports in functionalized graphene Sierpinski carpet fractals

Recent progress in controllable functionalization of graphene surfaces enables the experimental realization of complex functionalized graphene nanostructures, such as Sierpinski carpet (SC) fractals. Herein, we model the SC fractals formed by hydrogen and fluorine functionalized patterns on graphene surfaces, namely, H-SC and F-SC, respectively. We then reveal their electronic properties and quantum transport features. From calculated results of the total and local density of state, we find that states in H-SC and F-SC have two characteristics: (i) low-energy states inside about |E/t|<1 (with t as the near-neighbor hopping) are localized inside free graphene regions due to the insulating properties of functionalized graphene regions, and (ii) high-energy states in F-SC have two special energy ranges including -2.3<E/t<-1.9 with localized holes only inside free graphene areas and 3<E/t<3.7 with localized electrons only inside fluorinated graphene areas. The two characteristics are further verified by the real-space distributions of normalized probability density. We analyze the fractal dimension of their quantum conductance spectra and find that conductance fluctuations in these structures follow the Hausdorff dimension. We calculate their optical conductivity and find that several additional conductivity peaks appear in high energy ranges due to the adsorbed H or F atoms.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Flat-band plasmons in twisted bilayer transition metal dichalcogenides

Twisted bilayer transition metal dichalcogenides are ideal platforms to study flat-band phenomena. In this paper, we investigate flat-band plasmons in the hole-doped twisted bilayer MoS$_2$ (tb-MoS$_2$) by employing a full tight-binding model and the random phase approximation. When considering lattice relaxations in tb-MoS$_2$, the flat band is not separated from remote valence bands, which makes the contribution of interband transitions in transforming the plasmon dispersion and energy significantly different. In particular, low-damped and quasi-flat plasmons emerge if we only consider intraband transitions in the doped flat band, whereas a $\sqrt q$ plasmon dispersion emerges if we also take into account interband transitions between the flat band and remote bands. Furthermore, the plasmon energies are tunable with twist angles and doping levels. However, in a rigid sample that suffers no lattice relaxations, lower-energy quasi-flat plasmons and higher-energy interband plasmons can coexist. For rigid tb-MoS$_2$ with a high doping level, strongly enhanced interband transitions quench the quasi-flat plasmons. Based on the lattice relaxation and doping effects, we conclude that two conditions, the isolated flat band and a properly hole-doping level, are essential for observing the low-damped and quasi-flat plasmon mode in twisted bilayer transition metal dichalcogenides. We hope that our study on flat-band plasmons can be instructive for studying the possibility of plasmon-mediated superconductivity in twisted bilayer transition metal dichalcogenides in the future.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

An accurate description of the structural and electronic properties of twisted bilayer graphene-boron nitride heterostructures

Twisted bilayer graphene (TBG) has taken the spotlight in the condensed matter community since the discovery of correlated phases at the so-called magic angle. Interestingly, the role of a substrate on the electronic properties of TBG has not been completely elucidated. Up to now, most of the theoretical works carried out in order to understand this effect have been done using continuum models. In this work, we have gone one step ahead and have studied heterostructures of TBG and hBN using an atomistic tight-binding model together with semi-classical molecular dynamics to take into account relaxation effects. We found that the presence of the hBN substrate has significant effects to the band structure of TBG even in the case where TBG and hBN are not aligned. Specifically, the substrate induces a large mass gap and strong pseudomagnetic fields which break the layer degeneracy. Interestingly, such degeneracy can be recovered with a second hBN layer. Finally, we have also developed a continuum model that describes the tight-binding band structure. Our results show that a real-space tight-binding model in combination with semi-classical molecular dynamics are a powerful tool to study the electronic properties of supermoiré systems and that using this real-space methodology could be key in order to explain certain experimental results in which the effect of the substrate plays an important role.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Distribution of ripples in graphene membrane

Intrinsic ripples with various configurations and sizes were reported to affect the physical and chemical properties of 2D materials. By performing molecular dynamics simulations and theoretical analysis, we use two geometric models of the ripple shape to explore numerically the distribution of ripples in graphene membrane. We focus on the ratio of ripple height to its diameter (t/D) which was recently shown to be the most relevant for chemical activity of graphene membranes. Our result demonstrates that the ripple density decreases as the coefficient t/D increases, in a qualitative agreement with the Boltzmann distribution derived analytically from the bending energy of the membrane. Our theoretical study provides also specific quantitative information on the ripple distribution in graphene and gives new insights applicable to other 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Electronic and Optical properties of transition metal dichalcogenides under symmetric and asymmetric field-effect doping

Doping via electrostatic gating is a powerful and widely used technique to tune the electron densities in layered materials. The microscopic details of how these setups affect the layered material are, however, subtle and call for careful theoretical treatments. Using semiconducting monolayers of transition metal dichalcogenides (TMDs) as prototypical systems affected by electrostatic gating, we show that the electronic and optical properties change indeed dramatically when the gating geometry is properly taken into account. This effect is implemented by a self-consistent calculation of the Coulomb interaction between the charges in different sub-layers within the tight-binding approximation. Thereby we consider both, single- and double-sided gating. Our results show that, at low doping levels of $10^{13}$ cm$^{-2}$, the electronic bands of monolayer TMDs shift rigidly for both types of gating, and subsequently undergo a Lifshitz transition. When approaching the doping level of $10^{14}$ cm$^{-2}$, the band structure changes dramatically, especially in the case of single-sided gating where we find that monolayer \ce{MoS2} and \ce{WS2} become indirect gap semiconductors. The optical conductivities calculated within linear response theory also show clear signatures of these doping-induced band structure renormalizations. Our numerical results based on light-weighted tight-binding models indicate the importance of electronic screening in doped layered structures, and pave the way for further understanding gated super-lattice structures formed by mutlilayers with extended Moiré pattern.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Interlayer hybridization in graphene quasicrystal and other bilayer graphene systems

The incommensurate 30$^{\circ}$ twisted bilayer graphene (BG) possesses both relativistic Dirac fermions and quasiperiodicity with 12-fold rotational symmetry arising from the interlayer interaction [\href{https://science.sciencemag.org/content/361/6404/782}{Ahn et al., Science \textbf{361}, 782 (2018)} and \href{https://www.pnas.org/content/115/27/6928}{Yao et al., Proc. Natl. Acad. Sci. \textbf{115}, 6928 (2018)}]. Understanding how the interlayer states interact with each other is of vital importance for identifying and subsequently engineering the quasicrystalline order in the layered structures. Herein, via symmetry and group representation theory we unravel the interlayer hybridization selection rules governing the interlayer coupling in both untwisted and twisted BG systems. Compared with the only allowed equivalent hybridization in $D_{6h}$ untwisted BG, $D_6$ twisted BG permits equivalent and mixed hybridizations, and $D_{6d}$ graphene quasicrystal allows both equivalent and non-equivalent hybridizations. The energy-dependent hybridization strengths in graphene quasicrystal and $D_6$ twisted BG show two remarkable characteristics: (i) near the Fermi level the weak hybridization owing to the relatively large energy difference between Dirac bands from top and bottom layers, and (ii) in high-energy regions the electron-hole asymmetry of hybridization strength with stronger interlayer coupling for holes, which arises from the non-nearest-neighbor interlayer hoppings and the wave-function phase difference between paring states. These hybridization-generated band structures and their hybridization strength characteristics are verified by the calculated optical conductivity spectra. Our theoretical study paves a way for revealing the interlayer hybridization in van der Waals layered systems.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Realizing One-dimensional Metallic States in Graphene via Periodically Coupled Zeroth Pseudo-Landau Levels

Strain-induced pseudo-magnetic fields can mimic real magnetic fields to generate a zero-magnetic-field analogue of the Landau levels (LLs), i.e., the pseudo-LLs, in graphene. The distinct nature of the pseudo-LLs enables one to realize novel electronic states beyond that can be feasible with real LLs. Here, we report the realization of one-dimensional (1D) metallic states, which can be described well by the Su-Schrieffer-Heeger model, in graphene via periodically coupled zeroth pseudo-LLs. In our experiment, nanoscale strained structures embedded with pseudo-LLs are generated periodically along 1D channel of suspended graphene monolayer. Our experiments demonstrate that the zeroth pseudo-LLs of these strained structures are coupled to form metallic states, exhibiting a serpentine pattern that snakes back and forth along the 1D suspended graphene monolayer. These results are verified theoretically by large-scale tight-binding calculations of the strained samples. Our result provides a new pathway to realize novel quantum states and engineer the electronic properties of graphene by using the localized pseudo-LLs as building blocks.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electron-phonon interaction and zero-field charge carrier transport in the nodal-line semimetal ZrSiS

We study electron-phonon interaction and related transport properties of nodal-line semimetal ZrSiS using first-principles calculations. We find that ZrSiS is characterized by a weak electron-phonon coupling on the order of 0.1, which is almost energy independent. The main contribution to the electron-phonon coupling originates from long-wavelength optical phonons, causing no significant renormalization of the electron spectral function. At the charge neutrality point, we find that electrons and holes provide a comparable contribution to the scattering rate. The phonon-limited resistivity calculated within the Boltzmann transport theory is found to be strongly direction-dependent with the ratio between out-of-plane and in-plane directions being $ρ_{zz}/ρ_{xx}\sim 7.5$, mainly determined by the anisotropy of carrier velocities. We estimate zero-field resistivity to be $ρ_{xx}\approx12$ $μΩ$ cm at 300 K, which is in good agreement with experimental data. Relatively small resistivity in ZrSiS can be attributed to a combination of weak electron-phonon coupling and high carrier velocities.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electronic structure of 30° twisted double bilayer graphene

In this paper, the electronic properties of 30° twisted double bilayer graphene, which loses the translational symmetry due to the incommensurate twist angle, are studied by means of the tight-binding approximation. We demonstrate the interlayer decoupling in the low-energy region from various electronic properties, such as the density of states, effective band structure, optical conductivity and Landau level spectrum. However, at Q points, the interlayer coupling results in the appearance of new Van Hove singularities in the density of states, new peaks in the optical conductivity and importantly the 12-fold-symmetry-like electronic states. The k-space tight-binding method is adopted to explain this phenomenon. The electronic states at Q points show the charge distribution patterns more complex than the 30° twisted bilayer graphene due to the symmetry decrease. These phenomena appear also in the 30° twisted interface between graphene monolayer and AB stacked bilayer.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

How Substitutional Point Defects in Two-Dimensional WS$_2$ Induce Charge Localization, Spin-Orbit Splitting, and Strain

Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided incorporation of functional foreign atoms. The first step towards impurity control is the identification of defects and assessment of their electronic properties. Here, we present a comprehensive study of point defects in monolayer tungsten disulfide (WS$_2$) grown by chemical vapor deposition (CVD) using scanning tunneling microscopy/spectroscopy, CO-tip noncontact atomic force microscopy, Kelvin probe force spectroscopy, density functional theory, and tight-binding calculations. We observe four different substitutional defects: chromium (Cr$_{\text{W}}$) and molybdenum (Mo$_{\text{W}}$) at a tungsten site, oxygen at sulfur sites in both bottom and top layers (O$_{\text{S}}$ top/bottom), as well as two negatively charged defects (CDs). Their electronic fingerprints unambiguously corroborate the defect assignment and reveal the presence or absence of in-gap defect states. The important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS$_2$ as reported here will guide future efforts of targeted defect engineering and doping of TMDs.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Linearized spectral decimation in fractals

In this article we study the energy level spectrum of fractals which have block-hierarchical structures. We develop a method to study the spectral properties in terms of linearization of spectral decimation procedure and verify it numerically. Our approach provides qualitative explanations for various spectral properties of self-similar graphs within the theory of dynamical systems, including power-law level-spacing distribution, smooth density of states and effective chaotic regime.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Multi-ultraflatbands tunability and effect of spin-orbit coupling in twisted bilayer transition metal dichalcogenides

Ultraflatbands that have been theoretically and experimentally detected in a bunch of van der Waals stacked materials showing some peculiar properties, for instance, highly localized electronic states and enhanced electron-electron interactions. In this Letter, using an accurate tight-binding model, we study the formation and evolution of ultraflatbands in transition metal dichalcogenides (TMDCs) under low rotation angles. We find that, unlike in twisted bilayer graphene, ultraflatbands exist in TMDCs for almost any small twist angles and their wave function becomes more localized when the rotation angle decreases. Lattice relaxation, pressure and local deformation can tune the width of the flatbands, as well as their localization. Furthermore, we investigate the effect of spin-orbit coupling on the flatbands and discover spin/orbital/valley locking at the minimum of the conduction band at the K point of the Brillouin zone. The ultraflatbands found in TMDCs with a range of rotation angle below $7^\circ$, may provide an ideal platform to study strongly correlated states.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Pressure and electric field dependence of quasicrystalline electronic states in 30$^{\circ}$ twisted bilayer graphene

30$^{\circ}$ twisted bilayer graphene demonstrates the quasicrystalline electronic states with 12-fold symmetry. These states are however far away from the Fermi level, which makes conventional Dirac fermion behavior dominating the low energy spectrum in this system. By using tight-binding approximation, we study the effect of external pressure and electric field on the quasicrystalline electronic states. Our results show that by applying the pressure perpendicular to graphene plane one can push the quasicrystalline electronic states towards the Fermi level. Then, the electron or hole doping of the order of $\sim$ $4\times10^{14}$ $cm^{-2}$ is sufficient for the coincidence of the Fermi level with these quasicrystalline states. Moreover, our study indicates that applying the electric field perpendicular to the graphene plane can destroy the 12-fold symmetry of these states and break the energy degeneracy of the 12-wave states, and it is easier to reach this in the conduction band than in the valence band. Importantly, the application of the pressure can recover the 12-fold symmetry of these states to some extent against the electric field. We propose a hybridization picture which can explain all these phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strain-induced semiconductor to metal transition in MA2Z4 bilayers

Very recently, a new type of two-dimensional layered material MoSi2N4 has been fabricated, which is semiconducting with weak interlayer interaction, high strength, and excellent stability. We systematically investigate theoretically the effect of vertical strain on the electronic structure of MA2Z4 (M=Ti/Cr/Mo, A=Si, Z=N/P) bilayers. Taking bilayer MoSi2N4 as an example, our first principle calculations show that its indirect band gap decreases monotonically as the vertical compressive strain increases. Under a critical strain around 22%, it undergoes a transition from semiconductor to metal. We attribute this to the opposite energy shift of states in different layers, which originates from the built-in electric field induced by the asymmetric charge transfer between two inner sublayers near the interface. Similar semiconductor to metal transitions are observed in other strained MA2Z4 bilayers, and the estimated critical pressures to realize such transitions are within the same order as semiconducting transition metal dichalcogenides. The semiconductor to metal transitions observed in the family of MA2Z4 bilayers present interesting possibilities for strain-induced engineering of their electronic properties.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tuning band gaps in twisted bilayer MoS$_2$

In the emerging world of twisted bilayer structures, the possible configurations are limitless, which enables for a rich landscape of electronic properties. In this paper, we focus on twisted bilayer transition metal dichalcogenides (TMDCs) and study its properties by means of an accurate tight-binding model. We build structures with different angles and find that the so-called flatbands emerge when the twist angle is sufficiently small (around 7.3$^{\circ}$). Interestingly, the band gap can be tuned up to a 2.2\% (51 meV) when the twist angle in the relaxed sample varies from 21.8$^{\circ}$ to 0.8$^{\circ}$. Furthermore, when looking at local density of states we find that the band gap varies locally along the moirè pattern due to the change in the coupling between layers at different sites. Finally, we also find that the system can suffer a transition from a semiconductor to a metal when a sufficiently strong electric field is applied. Our study can serve as a guide for the practical engineering of the TMDCs based optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Hall conductivity of Sierpinski carpet

We calculate the Hall conductivity of a Sierpinski carpet using Kubo-Bastin formula. The quantization of Hall conductivity disappears when we increase the depth of the fractal. The Hall conductivity is no more proportional to the Chern number. Nevertheless, these quantities behave in a similar way showing some reminiscence of a topological nature of the Hall conductivity. We also study numerically the bulk-edge correspondence and find that the edge states become less manifested when the depth of Sierpinski carpet is increased.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Large-area, periodic, and tunable intrinsic pseudo-magnetic fields in low-angle twisted bilayer graphene

A properly strained graphene monolayer or bilayer is expected to harbour periodic pseudo-magnetic fields with high symmetry, yet to date, a convincing demonstration of such pseudo-magnetic fields has been lacking, especially for bilayer graphene. Here, we report the first definitive experimental proof for the existence of large-area, periodic pseudo-magnetic fields, as manifested by vortex lattices in commensurability with the moiré patterns of low-angle twisted bilayer graphene. The pseudo-magnetic fields are strong enough to confine the massive Dirac electrons into circularly localized pseudo-Landau levels, as observed by scanning tunneling microscopy/spectroscopy, and also corroborated by tight-binding calculations. We further demonstrate that the geometry, amplitude, and periodicity of the pseudo-magnetic field can be fine-tuned by both the rotation angle and heterostrain applied to the system. Collectively, the present study substantially enriches twisted bilayer graphene as a powerful enabling platform for exploration of new and exotic physical phenomena, including quantum valley Hall effects and quantum anomalous Hall effects.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Tunable magneto-optical properties of single-layer tin diselenide: From GW approximation to large-scale tight-binding calculations

A parameterized tight-binding (TB) model based on the first-principles GW calculations is developed for single layer tin diselenide (SnSe$_2$) and used to study its electronic and optical properties under external magnetic field. The truncated model is derived from six maximally localized wannier orbitals on Se site, which accurately describes the quasi-particle electronic states of single layer SnSe$_2$ in a wide energy range. The quasi-particle electronic states are dominated by the hoppings between nearest wannier orbitals ($t_1$-$t_6$). Our numerical calculation shows that, due to the electron-hole asymmetry, two sets of Landau Level spectrum are obtained when a perpendicular magnetic field is applied. The Landau Level spectrum follows linear dependence on the level index and magnetic field, exhibiting properties of two-dimensional electron gas in traditional semiconductors. The optical conductivity calculation shows that the optical gap is very close to the GW value, and can be tuned by external magnetic field. Our proposed TB model can be used for further exploring the electronic, optical, and transport properties of SnSe$_2$, especially in the presence of external magnetic fields.

0 citations0 reviewsNo code linkedOpen access