Researcher profile

Jose Angel Silva-Guillen

Jose Angel Silva-Guillen contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Multi-ultraflatbands tunability and effect of spin-orbit coupling in twisted bilayer transition metal dichalcogenides

Ultraflatbands that have been theoretically and experimentally detected in a bunch of van der Waals stacked materials showing some peculiar properties, for instance, highly localized electronic states and enhanced electron-electron interactions. In this Letter, using an accurate tight-binding model, we study the formation and evolution of ultraflatbands in transition metal dichalcogenides (TMDCs) under low rotation angles. We find that, unlike in twisted bilayer graphene, ultraflatbands exist in TMDCs for almost any small twist angles and their wave function becomes more localized when the rotation angle decreases. Lattice relaxation, pressure and local deformation can tune the width of the flatbands, as well as their localization. Furthermore, we investigate the effect of spin-orbit coupling on the flatbands and discover spin/orbital/valley locking at the minimum of the conduction band at the K point of the Brillouin zone. The ultraflatbands found in TMDCs with a range of rotation angle below $7^\circ$, may provide an ideal platform to study strongly correlated states.

preprint2020arXiv

Tuning band gaps in twisted bilayer MoS$_2$

In the emerging world of twisted bilayer structures, the possible configurations are limitless, which enables for a rich landscape of electronic properties. In this paper, we focus on twisted bilayer transition metal dichalcogenides (TMDCs) and study its properties by means of an accurate tight-binding model. We build structures with different angles and find that the so-called flatbands emerge when the twist angle is sufficiently small (around 7.3$^{\circ}$). Interestingly, the band gap can be tuned up to a 2.2\% (51 meV) when the twist angle in the relaxed sample varies from 21.8$^{\circ}$ to 0.8$^{\circ}$. Furthermore, when looking at local density of states we find that the band gap varies locally along the moirè pattern due to the change in the coupling between layers at different sites. Finally, we also find that the system can suffer a transition from a semiconductor to a metal when a sufficiently strong electric field is applied. Our study can serve as a guide for the practical engineering of the TMDCs based optoelectronic devices.