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Researcher profile

Zhe Cheng

Zhe Cheng contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-phphysics.ins-detphysics.optics

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Published work

10 published item(s)

preprint2026arXiv

Thermal conductance across bonded SiOx-SiOx interfaces in hybrid bonding process

Hybrid bonding is a pivotal technology for enabling three dimensional integrated circuits. Among the foremost challenges facing 3D IC implementation is thermal management, where a deep understanding of heat conduction across bonded interfaces is essential for addressing heat dissipation and reliability issues. Nevertheless, the thermal conductance of bonded dielectric-dielectric interfaces remains poorly understood. In this study, we employ the low-temperature bonding technique integral to hybrid bonding to fabricate SiO-SiO interfaces and investigate their thermal boundary conductance using time domain thermoreflectance. Structural characterizations show high quality bonded interfaces. By fitting the data with an equivalent multilayer thermal model, we establish a lower limit TBC of 150 MW/m2-K for the SiO-SiO interfaces, which corresponds to a thermal resistance lower than that of a 9.2-nm-thick dielectric layer. These findings offer valuable insights into thermal transport in hybrid-bonded structures and provide critical guidance for the thermal design of advanced packaging solutions.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Selective Direct Bonding of High Thermal Conductivity 3C-SiC Film to \b{eta}-Ga2O3 for Top-Side Heat Extraction

beta-Ga2O3 is a wide bandgap semiconductor with electrical properties better than SiC and GaN which makes it promising for applications of next-generation power devices. However, the thermal conductivity of \b{eta}-Ga2O3 is more than one order of magnitude lower than that of SiC and GaN, resulting in serious thermal management problems that limit device performance and reliability. This work reports selectively transferring of high thermal conductivity 3C-SiC thin film grown on Si to beta-Ga2O3 (001) substrate using surface activated bonding (SAB) technique at room temperature, to attempt extracting the heat from the surface of the devices. A 4.5-nm-thick interfacial crystal defect layer is formed at the as-bonded 3C-SiC/beta-Ga2O3 interface. The thickness of the interfacial crystal defect layer decreases with increasing annealing temperature, which decreases to 1.5 nm after annealing at 1000 C. No voids and unbonded area are observed at the interfaces, even after annealing at temperature as high as 1000 C. The thermal boundary conductance (TBC) of the 1000 C-annealed 3C-SiC/beta-Ga2O3 interface and thermal conductivity of the beta-Ga2O3 substrate was measured by time-domain thermoreflectance (TDTR). The 3C-SiC/beta-Ga2O3 TBC value was determined to be 244 MW/m2-K, which is the highest value ever reported for SiC/Ga2O3 interfaces, due to the high-quality heterointerface. Our works demonstrate that selective transferring of 3C-SiC film to the beta-Ga2O3 substrate is an efficient path to improve heat dissipation of the \b{eta}-Ga2O3 power devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Experimental Observation of Localized Interfacial Phonon Modes

Interfaces impede heat flow in micro/nanostructured systems. Conventional theories for interfacial thermal transport were derived based on bulk phonon properties of the materials making up the interface without explicitly considering the atomistic interfacial details, which are found critical to correctly describing thermal boundary conductance (TBC). Recent theoretical studies predicted the existence of localized phonon modes at the interface which can play an important role in understanding interfacial thermal transport. However, experimental validation is still lacking. Through a combination of Raman spectroscopy and high-energy resolution electron energy-loss spectroscopy (EELS) in a scanning transmission electron microscope, we report the first experimental observation of localized interfacial phonon modes at ~12 THz at a high-quality epitaxial Si-Ge interface. These modes are further confirmed using molecular dynamics simulations with a high-fidelity neural network interatomic potential, which also yield TBC agreeing well with that measured from time-domain thermoreflectance (TDTR) experiments. Simulations find that the interfacial phonon modes have obvious contribution to the total TBC. Our findings may significantly contribute to the understanding of interfacial thermal transport physics and have impact on engineering TBC at interfaces in applications such as electronics thermal management and thermoelectric energy conversion.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Simultaneous Evaluation of Heat Capacity and In-plane Thermal Conductivity of Nanocrystalline Diamond Thin Films

As wide bandgap electronic devices have continued to advance in both size reduction and power handling capabilities, heat dissipation has become a significant concern. To mitigate this, chemical vapor deposited (CVD) diamond has been demonstrated as an effective solution for thermal management of these devices by directly growing onto the transistor substrate. A key aspect of power and radio frequency (RF) electronic devices involves transient switching behavior, which highlights the importance of understanding the temperature dependence of the heat capacity and thermal conductivity when modeling and predicting device electrothermal response. Due to the complicated microstructure near the interface between CVD diamond and electronics, it is difficult to measure both properties simultaneously. In this work, we use time domain thermoreflectance (TDTR) to simultaneously measure the in plane thermal conductivity and heat capacity of a 1 um thick CVD diamond film, and also use the pump as an effective heater to perform temperature dependent measurements. The results show that the in plane thermal conductivity varied slightly with an average of 103 W per meter per K over a temperature range of 302 to 327 K, while the specific heat capacity has a strong temperature dependence over the same range and matches with heat capacity data of natural diamond in literature.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Terahertz Strong-Field Physics in Light-Emitting Diodes for Terahertz Detection and Imaging

Intense terahertz (THz) electromagnetic fields have been utilized to reveal a variety of extremely nonlinear optical effects in many materials through nonperturbative driving of elementary and collective excitations. However, such nonlinear photoresponses have not yet been discovered in light-emitting diodes (LEDs), letting alone employing them as fast, cost effective,compact, and room-temperature-operating THz detectors and cameras. Here we report ubiquitously available LEDs exhibited gigantic and fast photovoltaic signals with excellent signal-to-noise ratios when being illuminated by THz field strengths >50 kV/cm. We also successfully demonstrated THz-LED detectors and camera prototypes. These unorthodox THz detectors exhibited high responsivities (>1 kV/W) with response time shorter than those of pyroelectric detectors by four orders of magnitude. The detection mechanism was attributed to THz-field-induced nonlinear impact ionization and Schottky contact. These findings not only help deepen our understanding of strong THz field-matter interactions but also greatly contribute to the applications of strong-field THz diagnosis.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Wafer-scale Heterogeneous Integration of Monocrystalline \b{eta}-Ga2O3 Thin Films on SiC for Thermal Management by Ion-Cutting Technique

The ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates make \b{eta}-Ga2O3 promising for applications of next-generation power electronics while its thermal conductivity is at least one order of magnitude lower than other wide/ultrawide bandgap semiconductors. To avoid the degradation of device performance and reliability induced by the localized Joule-heating, aggressive thermal management strategies are essential, especially for high-power high-frequency applications. This work reports a scalable thermal management strategy to heterogeneously integrate wafer-scale monocrystalline \b{eta}-Ga2O3 thin films on high thermal conductivity SiC substrates by ion-cutting technique. The thermal boundary conductance (TBC) of the \b{eta}-Ga2O3-SiC interfaces and thermal conductivity of the \b{eta}-Ga2O3 thin films were measured by Time-domain Thermoreflectance (TDTR) to evaluate the effects of interlayer thickness and thermal annealing. Materials characterizations were performed to understand the mechanisms of thermal transport in these structures. The results show that the \b{eta}-Ga2O3-SiC TBC values increase with decreasing interlayer thickness and the \b{eta}-Ga2O3 thermal conductivity increases more than twice after annealing at 800 oC due to the removal of implantation-induced strain in the films. A Callaway model is built to understand the measured thermal conductivity. Small spot-to-spot variations of both TBC and Ga2O3 thermal conductivity confirm the uniformity and high-quality of the bonding and exfoliation. Our work paves the way for thermal management of power electronics and \b{eta}-Ga2O3 related semiconductor devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Experimental Observation of High Intrinsic Thermal Conductivity of AlN

AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long lifetimes. AlN, with its potentially high thermal conductivity, can play an important role serving as a dielectric layer, growth substrate, and heat spreader to improve device performance. However, the intrinsic high thermal conductivity of bulk AlN predicted by theoretical calculations has not been experimentally observed because of the difficulty in producing materials with low vacancy and impurity levels, and other associated defect complexes in AlN which can decrease the thermal conductivity. This work reports the growth of thick AlN layers by MOCVD with an air-pocketed AlN layer and the first experimental observation of intrinsic thermal conductivity from 130 K to 480 K that matches density-function-theory calculations for single crystal AlN, producing some of the highest values ever measured. Detailed material characterizations confirm the high quality of these AlN samples with one or two orders of magnitude lower impurity concentrations than seen in commercially available bulk AlN. Measurements of these commercially available bulk AlN substrates from 80 K to 480 K demonstrated a lower thermal conductivity, as expected. A theoretical thermal model is built to interpret the measured temperature dependent thermal conductivity. Our work demonstrates that it is possible to obtain theoretically high values of thermal conductivity in AlN and such films may impact the thermal management and reliability of future electronic and optoelectronics devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Integration of Atomic Layer Epitaxy Crystalline Ga2O3 on Diamond for Thermal Management

Ga2O3 has attracted great attention for electronic device applications due to its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is significantly lower than that of other wide bandgap semiconductors, which will impact its ability to be used in high power density applications. Thermal management in Ga2O3 electronics will be the key for device reliability, especially for high power and high frequency devices. Similar to the method of cooling GaN-based high electron mobility transistors by integrating it with high thermal conductivity diamond substrates, this work studies the possibility of heterogeneous integration of Ga2O3 with diamond for thermal management of Ga2O3 devices. In this work, Ga2O3 was deposited onto single crystal diamond substrates by ALD and the thermal properties of ALD-Ga2O3 thin films and Ga2O3-diamond interfaces with different interface pretreatments were measured by TDTR. We observed very low thermal conductivity of these Ga2O3 thin films due to the extensive phonon grain boundary scattering resulting from the nanocrystalline nature of the Ga2O3 film. However, the measured thermal boundary conductance (TBC) of the Ga2O3-diamond interfaces are about 10 times larger than that of the Van der Waals bonded Ga2O3 diamond interfaces, which indicates the significant impact of interface bonding on TBC. Furthermore, the TBC of the Ga-rich and O-rich Ga2O3-diamond interfaces are about 20% smaller than that of the clean interface, indicating interface chemistry affects interfacial thermal transport. Overall, this study shows that a high TBC can be obtained from strong interfacial bonds across Ga2O3-diamond interfaces, providing a promising route to improving the heat dissipation from Ga2O3 devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Thermal Conductance Across Harmonic-matched Epitaxial Al-sapphire Heterointerfaces

A unified understanding of interfacial thermal transport is missing due to the complicated nature of interfaces which involves complex factors such as interfacial bonding, interfacial mixing, surface chemistry, crystal orientation, roughness, contamination, and interfacial disorder. This is especially true for metal nonmetal interfaces which incorporate multiple fundamental heat transport mechanisms such as elastic and inelastic phonon scattering as well as electron phonon coupling in the metal and across the interface. All these factors jointly affect thermal boundary conductance (TBC). As a result, the experimentally measured interfaces may not be the same as the ideally modelled interfaces, thus obfuscating any conclusions drawn from experimental and modeling comparisons. This work provides a systematic study of interfacial thermal conductance across well controlled and ultraclean epitaxial (111) Al parallel (0001) sapphire interfaces, known as harmonic matched interface. A comparison with thermal models such as atomistic Green s function (AGF) and a nonequilibrium Landauer approach shows that elastic phonon scattering dominates the interfacial thermal transport of Al sapphire interface. By scaling the TBC with the Al heat capacity, a nearly constant transmission coefficient is observed, indicating that the phonons on the Al side limits the Al sapphire TBC. This nearly constant transmission coefficient validates the assumptions in AGF and nonequilibrium Landauer calculations. Our work not only provides a benchmark for interfacial thermal conductance across metal nonmetal interfaces and enables a quantitative study of TBC to validate theoretical thermal carrier transport mechanisms, but also acts as a reference when studying how other factors impact TBC.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Diffuson-driven Ultralow Thermal Conductivity in Amorphous Nb2O5 Thin Films

Niobium pentoxide (Nb2O5) has been extensively reported for applications of electrochemical energy storage, memristors, solar cells, light emitting diodes (LEDs), and electrochromic devices. The thermal properties of Nb2O5 play a critical role in device performance of these applications. However, very few studies on the thermal properties of Nb2O5 have been reported and a fundamental understanding of heat transport in Nb2O5 is still lacking. The present work closes this gap and provides the first study of thermal conductivity of amorphous Nb2O5 thin films. Ultralow thermal conductivity is observed without any size effect in films as thin as 48 nm, which indicates that propagons contribute negligibly to the thermal conductivity and that the thermal transport is dominated by diffusons. Density-function-theory (DFT) simulations combined with a diffuson-mediated minimum-thermal-conductivity model confirms this finding. Additionally, the measured thermal conductivity is lower than the amorphous limit (Cahill model), which proves that the diffuson model works better than the Cahill model to describe the thermal conduction mechanism in the amorphous Nb2O5 thin films. Additionally, the thermal conductivity does not change significantly with oxygen vacancy concentration. This stable and low thermal conductivity facilitates excellent performance for applications such as memristors.

0 citations0 reviewsNo code linkedOpen access