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Jingjing Shi

Jingjing Shi contributes to research discovery and scholarly infrastructure.

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Published work

11 published item(s)

preprint2022arXiv

A machine learning approach to infer the accreted stellar mass fractions of central galaxies in the TNG100 simulation

We propose a random forest (RF) machine learning approach to determine the accreted stellar mass fractions ($f_\mathrm{acc}$) of central galaxies, based on various dark matter halo and galaxy features. The RF is trained and tested using 2,710 galaxies with stellar mass $\log_{10}M_\ast/M_\odot>10.16$ from the TNG100 simulation. Galaxy size is the most important individual feature when calculated in 3-dimensions, which becomes less important after accounting for observational effects. For smaller galaxies, the rankings for features related to merger histories increase. When an entire set of halo and galaxy features are used, the prediction is almost unbiased, with root-mean-square error (RMSE) of $\sim$0.068. A combination of up to three features with different types (galaxy size, merger history and morphology) already saturates the power of prediction. If using observable features, the RMSE increases to $\sim$0.104, and a combined usage of stellar mass, galaxy size plus galaxy concentration achieves similar predictions. Lastly, when using galaxy density, velocity and velocity dispersion profiles as features, which approximately represent the maximum amount of information extracted from galaxy images and velocity maps, the prediction is not improved much. Hence the limiting precision of predicting $f_\mathrm{acc}$ is $\sim$0.1 with observables, and the multi-component decomposition of galaxy images should have similar or larger uncertainties. If the central black hole mass and the spin parameter of galaxies can be accurately measured in future observations, the RMSE is promising to be further decreased by $\sim$20%.

preprint2022arXiv

Cold Gas in Massive Galaxies as A Critical Test of Black Hole Feedback Models

Black hole feedback has been widely implemented as the key recipe to quench star formation in massive galaxies in modern semi-analytic models and hydrodynamical simulations. As the theoretical details surrounding the accretion and feedback of black holes continue to be refined, various feedback models have been implemented across simulations, with notable differences in their outcomes. Yet, most of these simulations have successfully reproduced some observations, such as stellar mass function and star formation rate density in the local Universe. We use the recent observation on the change of neutral hydrogen gas mass (including both ${\rm H_2}$ and ${\rm HI}$) with star formation rate of massive central disc galaxies as a critical constraint of black hole feedback models across several simulations. We find that the predictions of IllustrisTNG agree with the observations much better than the other models tested in this work. This favors IllustrisTNG's treatment of active galactic nuclei - where kinetic winds are driven by black holes at low accretion rates - as more plausible amongst those we test. In turn, this also indirectly supports the idea that the massive central disc galaxy population in the local Universe was likely quenched by AGN feedback.

preprint2021arXiv

Experimental Observation of Localized Interfacial Phonon Modes

Interfaces impede heat flow in micro/nanostructured systems. Conventional theories for interfacial thermal transport were derived based on bulk phonon properties of the materials making up the interface without explicitly considering the atomistic interfacial details, which are found critical to correctly describing thermal boundary conductance (TBC). Recent theoretical studies predicted the existence of localized phonon modes at the interface which can play an important role in understanding interfacial thermal transport. However, experimental validation is still lacking. Through a combination of Raman spectroscopy and high-energy resolution electron energy-loss spectroscopy (EELS) in a scanning transmission electron microscope, we report the first experimental observation of localized interfacial phonon modes at ~12 THz at a high-quality epitaxial Si-Ge interface. These modes are further confirmed using molecular dynamics simulations with a high-fidelity neural network interatomic potential, which also yield TBC agreeing well with that measured from time-domain thermoreflectance (TDTR) experiments. Simulations find that the interfacial phonon modes have obvious contribution to the total TBC. Our findings may significantly contribute to the understanding of interfacial thermal transport physics and have impact on engineering TBC at interfaces in applications such as electronics thermal management and thermoelectric energy conversion.

preprint2021arXiv

Phonon heat conduction in Al1-xScxN thin films

Aluminum scandium nitride alloy (Al1-xScxN) is regarded as a promising material for high-performance acoustic devices used in wireless communication systems. Phonon scattering and heat conduction processes govern the energy dissipation in acoustic resonators, ultimately determining their performance quality. This work reports, for the first time, on phonon scattering processes and thermal conductivity in Al1-xScxN alloys with the Sc content (x) up to 0.26. The thermal conductivity measured presents a descending trend with increasing x. Temperature-dependent measurements show an increase in thermal conductivity as the temperature increases at temperatures below 200K, followed by a plateau at higher temperatures (T> 200K). Application of a virtual crystal phonon conduction model allows us to elucidate the effects of boundary and alloy scattering on the observed thermal conductivity behaviors. We further demonstrate that the alloy scattering is caused mainly by strain-field difference, and less by the atomic mass difference between ScN and AlN, which is in contrast to the well-studied Al1-xGaxN and SixGe1-x alloy systems where atomic mass difference dominates the alloy scattering. This work studies and provides the quantitative knowledge for phonon scattering and the thermal conductivity in Al1-xScxN, paving the way for future investigation of materials and design of acoustic devices.

preprint2020arXiv

The Formation History of Subhalos and the Evolution of Satellite Galaxies

Satellites constitute an important fraction of the overall galaxy population and are believed to form in dark matter subhalos. Here we use the cosmological hydrodynamic simulation TNG100 to investigate how the formation histories of subhalos affect the properties and evolution of their host galaxies. We use a scaled formation time ($a_{\rm nf}$) to characterize the mass assembly histories of the subhalos before they are accreted by massive host halos. We find that satellite galaxies in young subhalos (low $a_{\rm nf}$) are less massive and more gas rich, and have stronger star formation and a higher fraction of ex situ stellar mass than satellites in old subhalos (high $a_{\rm nf}$). Furthermore, these low $a_{\rm nf}$ satellites require longer timescales to be quenched as a population than the high $a_{\rm nf}$ counterparts. We find very different merger histories between satellites in fast accretion (FA, $a_{\rm nf}<1.3$) and slow accretion (SA, $a_{\rm nf}>1.3$) subhalos. For FA satellites, the galaxy merger frequency dramatically increases just after accretion, which enhances the star formation at accretion. While, for SA satellites, the mergers occur smoothly and continuously across the accretion time. Moreover, mergers with FA satellites happen mainly after accretion, while a contrary trend is found for SA satellites. Our results provide insight into the evolution and star formation quenching of the satellite population.

preprint2020arXiv

Wafer-scale Heterogeneous Integration of Monocrystalline \b{eta}-Ga2O3 Thin Films on SiC for Thermal Management by Ion-Cutting Technique

The ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates make \b{eta}-Ga2O3 promising for applications of next-generation power electronics while its thermal conductivity is at least one order of magnitude lower than other wide/ultrawide bandgap semiconductors. To avoid the degradation of device performance and reliability induced by the localized Joule-heating, aggressive thermal management strategies are essential, especially for high-power high-frequency applications. This work reports a scalable thermal management strategy to heterogeneously integrate wafer-scale monocrystalline \b{eta}-Ga2O3 thin films on high thermal conductivity SiC substrates by ion-cutting technique. The thermal boundary conductance (TBC) of the \b{eta}-Ga2O3-SiC interfaces and thermal conductivity of the \b{eta}-Ga2O3 thin films were measured by Time-domain Thermoreflectance (TDTR) to evaluate the effects of interlayer thickness and thermal annealing. Materials characterizations were performed to understand the mechanisms of thermal transport in these structures. The results show that the \b{eta}-Ga2O3-SiC TBC values increase with decreasing interlayer thickness and the \b{eta}-Ga2O3 thermal conductivity increases more than twice after annealing at 800 oC due to the removal of implantation-induced strain in the films. A Callaway model is built to understand the measured thermal conductivity. Small spot-to-spot variations of both TBC and Ga2O3 thermal conductivity confirm the uniformity and high-quality of the bonding and exfoliation. Our work paves the way for thermal management of power electronics and \b{eta}-Ga2O3 related semiconductor devices.

preprint2019arXiv

Experimental Observation of High Intrinsic Thermal Conductivity of AlN

AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long lifetimes. AlN, with its potentially high thermal conductivity, can play an important role serving as a dielectric layer, growth substrate, and heat spreader to improve device performance. However, the intrinsic high thermal conductivity of bulk AlN predicted by theoretical calculations has not been experimentally observed because of the difficulty in producing materials with low vacancy and impurity levels, and other associated defect complexes in AlN which can decrease the thermal conductivity. This work reports the growth of thick AlN layers by MOCVD with an air-pocketed AlN layer and the first experimental observation of intrinsic thermal conductivity from 130 K to 480 K that matches density-function-theory calculations for single crystal AlN, producing some of the highest values ever measured. Detailed material characterizations confirm the high quality of these AlN samples with one or two orders of magnitude lower impurity concentrations than seen in commercially available bulk AlN. Measurements of these commercially available bulk AlN substrates from 80 K to 480 K demonstrated a lower thermal conductivity, as expected. A theoretical thermal model is built to interpret the measured temperature dependent thermal conductivity. Our work demonstrates that it is possible to obtain theoretically high values of thermal conductivity in AlN and such films may impact the thermal management and reliability of future electronic and optoelectronics devices.

preprint2019arXiv

Integration of Atomic Layer Epitaxy Crystalline Ga2O3 on Diamond for Thermal Management

Ga2O3 has attracted great attention for electronic device applications due to its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is significantly lower than that of other wide bandgap semiconductors, which will impact its ability to be used in high power density applications. Thermal management in Ga2O3 electronics will be the key for device reliability, especially for high power and high frequency devices. Similar to the method of cooling GaN-based high electron mobility transistors by integrating it with high thermal conductivity diamond substrates, this work studies the possibility of heterogeneous integration of Ga2O3 with diamond for thermal management of Ga2O3 devices. In this work, Ga2O3 was deposited onto single crystal diamond substrates by ALD and the thermal properties of ALD-Ga2O3 thin films and Ga2O3-diamond interfaces with different interface pretreatments were measured by TDTR. We observed very low thermal conductivity of these Ga2O3 thin films due to the extensive phonon grain boundary scattering resulting from the nanocrystalline nature of the Ga2O3 film. However, the measured thermal boundary conductance (TBC) of the Ga2O3-diamond interfaces are about 10 times larger than that of the Van der Waals bonded Ga2O3 diamond interfaces, which indicates the significant impact of interface bonding on TBC. Furthermore, the TBC of the Ga-rich and O-rich Ga2O3-diamond interfaces are about 20% smaller than that of the clean interface, indicating interface chemistry affects interfacial thermal transport. Overall, this study shows that a high TBC can be obtained from strong interfacial bonds across Ga2O3-diamond interfaces, providing a promising route to improving the heat dissipation from Ga2O3 devices.

preprint2019arXiv

Thermal boundary resistance predictions with non-equilibrium Green&#39;s function and molecular dynamics simulations

The non-equilibrium Green&#39;s function (NEGF) method with Büttiker probe scattering self-energies is assessed by comparing its predictions for the thermal boundary resistance with molecular dynamics (MD) simulations. For simplicity, the interface of Si/heavy-Si is considered, where heavy-Si differs from Si only in the mass value. With Büttiker probe scattering parameters tuned against MD in homogeneous Si, the NEGF-predicted thermal boundary resistance quantitatively agrees with MD for wide mass ratios. Artificial resistances that the unaltered Landauer approach yield at virtual interfaces in homogeneous systems are absent in the present NEGF approach. Spectral information result from NEGF in its natural representation without further transformations. The spectral results show that the scattering between different phonon modes plays a crucial role in thermal transport across interfaces. Büttiker probes provide an efficient and reliable way to include anharmonicity in phonon related NEGF. NEGF including the Büttiker probes can reliably predict phonon transport across interfaces and at finite temperatures.

preprint2019arXiv

Thermal Conductance Across Harmonic-matched Epitaxial Al-sapphire Heterointerfaces

A unified understanding of interfacial thermal transport is missing due to the complicated nature of interfaces which involves complex factors such as interfacial bonding, interfacial mixing, surface chemistry, crystal orientation, roughness, contamination, and interfacial disorder. This is especially true for metal nonmetal interfaces which incorporate multiple fundamental heat transport mechanisms such as elastic and inelastic phonon scattering as well as electron phonon coupling in the metal and across the interface. All these factors jointly affect thermal boundary conductance (TBC). As a result, the experimentally measured interfaces may not be the same as the ideally modelled interfaces, thus obfuscating any conclusions drawn from experimental and modeling comparisons. This work provides a systematic study of interfacial thermal conductance across well controlled and ultraclean epitaxial (111) Al parallel (0001) sapphire interfaces, known as harmonic matched interface. A comparison with thermal models such as atomistic Green s function (AGF) and a nonequilibrium Landauer approach shows that elastic phonon scattering dominates the interfacial thermal transport of Al sapphire interface. By scaling the TBC with the Al heat capacity, a nearly constant transmission coefficient is observed, indicating that the phonons on the Al side limits the Al sapphire TBC. This nearly constant transmission coefficient validates the assumptions in AGF and nonequilibrium Landauer calculations. Our work not only provides a benchmark for interfacial thermal conductance across metal nonmetal interfaces and enables a quantitative study of TBC to validate theoretical thermal carrier transport mechanisms, but also acts as a reference when studying how other factors impact TBC.

preprint2019arXiv

X-shaped Radio Galaxies: Optical Properties, Large-scale Environment and Relationship to Radio Structure

In order to find clues to the origin of the &#34;winged&#34; or &#34;X-shaped&#34; radio galaxies (XRGs) we investigate here the parent galaxies of a large sample of 106 XRGs for optical-radio axes alignment, interstellar medium, black hole mass, and large-scale environment. For 41 of the XRGs it was possible to determine the optical major axis and the primary radio axis and the strong tendency for the two axes to be fairly close is confirmed. However, several counter-examples were also found and these could challenge the widely discussed backflow diversion model for the origin of the radio wings. Comparison with a well-defined large sample of normal FR II radio galaxies has revealed that: (i) XRGs possess slightly less massive central black holes than the normal radio galaxies (average masses being log$M_{\rm BH} \sim$ 8.81 $M_{\odot}$ and 9.07 $M_{\odot}$, respectively); (ii) a much higher fraction of XRGs ($\sim$ 80%) exhibits red mid-IR colors ($W2 - W3 > 1.5$), indicating a population of young stars and/or an enhanced dust mass, probably due to relatively recent galaxy merger(s). A comparison of the large-scale environment (i.e., within $\sim$ 1 Mpc) shows that both XRGs and FRII radio galaxies inhabit similarly poor galaxy clustering environments (medium richness being 8.94 and 11.87, respectively). Overall, the origin of XRGs seems difficult to reconcile with a single dominant physical mechanism and competing mechanisms seem prevalent.