BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Yuriy V. Pershin

Yuriy V. Pershin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallEmerging Technologiescond-mat.mtrl-scicond-matcond-mat.othercond-mat.softMolecular NetworksNeurons and Cognitionphysics.comp-phphysics.ins-detquant-ph

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
17works
0followers
11topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

17 published item(s)

preprint2026arXiv

Low-Power Control of Resistance Switching Transitions in First-Order Memristors

In many cases, the behavior of physical memristive devices can be relatively well captured by using a single internal state variable. This study investigates the low-power control of first-order memristive devices to derive the most energy-efficient protocols for programming their resistances. A unique yet general approach to optimizing the switching transitions in devices of this kind is introduced. For pedagogical purposes, without loss of generality, the proposed control paradigm is applied to a couple of differential algebraic equation sets for voltage-controlled devices, specifically Kvatinsky's Voltage ThrEshold Adaptive Memristor mathematical description and Miranda's and Sune's dynamic balance model. It is demonstrated that, depending upon intrinsic physical properties of the device, captured in the model formulas and parameter setting, and upon constraints on programming time and voltages, the optimal protocol for either of the two switching scenarios may require the application of a single square voltage pulse of height set to a certain level within the admissible range across a fraction or entire given programming time interval, or of some more involved voltage stimulus of unique polarity, including analogue continuous waveforms that can be approximated by trains of square voltage pulses of different heights, over the entire programming time interval. The practical implications of these research findings are significant, as the development of energy-efficient protocols to program memristive devices, resolving the so-called voltage-time dilemma in the device physics community, is a subject under intensive and extensive studies across the academic community and industry.

0 citations0 reviewsNo code linkedOpen access
preprint2026arXiv

Minimizing energy dissipation during programming of resistive switching memory devices using their dynamical attractor states

Under certain conditions, applying a sequence of voltage pulses of alternating polarities across a resistive switching memory device induces a finite number of fixed-point attractors in its time-averaged dynamics, known as dynamical attractors. Remarkably, dynamical attractors can be used to program analog values into the device state without supervision. Because different pulse sequences can produce the same trajectory solution for the state in the phase space, there is strong potential for optimization, particularly regarding the energy cost of the programming phase, which this study addresses. The proposed theory-based energy minimization strategy is applied to the voltage threshold adaptive memristor (VTEAM) model, which is known for its predictive capability and adaptability in fitting a large number of resistive switching memory devices. The optimization design crafts ad-hoc pulse sequences that minimize the energy required to program the device into a desired dynamical attractor. The theoretical approach is also extended to cover situations where a fast programming scheme should be adopted to serve time-critical electronics applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Custodial chiral symmetry in a Su-Schrieffer-Heeger electrical circuit with memory

Custodial symmetries are common in the Standard Model of particle physics. They arise when quantum corrections to a parameter are proportional to the parameter itself. Here, we show that a custodial symmetry of the chiral type is also present in a classical Su-Schrieffer-Heeger (SSH) electrical circuit with memory (memcircuit). In the absence of memory, the SSH circuit supports a symmetry-protected topological edge state. Memory induces nonlinearities that break chiral symmetry explicitly and spreads the state across the circuit. However, the resulting state is still protected against perturbations by the ensuing custodial chiral symmetry. These predictions can be verified experimentally and demonstrate the interplay between symmetry and memory.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Second and higher harmonics generation with memristive systems

We show that memristive systems can be used very efficiently to generate passively both double and higher frequency harmonics. A technique for maximizing the power conversion efficiency into any given harmonic is developed and applied to a single memristive system and memristive bridge circuits. We find much higher rates of power conversion compared to the standard diode bridge, with the memristive bridge more efficient for second and higher harmonics generation compared to the single memristive system. The memristive bridge circuit optimized for second harmonic generation behaves as a two-quarter-wave rectifier.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Emulation of floating memcapacitors and meminductors using current conveyors

We suggest circuit realizations of emulators transforming memristive devices into effective floating memcapacitive and meminductive systems. The emulator's circuits are based on second generation current conveyors and involve either four single-output or two dual-output current conveyors. The equations governing the resulting memcapactive and meminductive systems are presented.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Solving mazes with memristors: a massively-parallel approach

Solving mazes is not just a fun pastime. Mazes are prototype models in graph theory, topology, robotics, traffic optimization, psychology, and in many other areas of science and technology. However, when maze complexity increases their solution becomes cumbersome and very time consuming. Here, we show that a network of memristors - resistors with memory - can solve such a non-trivial problem quite easily. In particular, maze solving by the network of memristors occurs in a massively parallel fashion since all memristors in the network participate simultaneously in the calculation. The result of the calculation is then recorded into the memristors' states, and can be used and/or recovered at a later time. Furthermore, the network of memristors finds all possible solutions in multiple-solution mazes, and sorts out the solution paths according to their length. Our results demonstrate not only the first application of memristive networks to the field of massively-parallel computing, but also a novel algorithm to solve mazes which could find applications in different research fields.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Experimental demonstration of associative memory with memristive neural networks

When someone mentions the name of a known person we immediately recall her face and possibly many other traits. This is because we possess the so-called associative memory, that is the ability to correlate different memories to the same fact or event. Associative memory is such a fundamental and encompassing human ability (and not just human) that the network of neurons in our brain must perform it quite easily. The question is then whether electronic neural networks (electronic schemes that act somewhat similarly to human brains) can be built to perform this type of function. Although the field of neural networks has developed for many years, a key element, namely the synapses between adjacent neurons, has been lacking a satisfactory electronic representation. The reason for this is that a passive circuit element able to reproduce the synapse behaviour needs to remember its past dynamical history, store a continuous set of states, and be "plastic" according to the pre-synaptic and post-synaptic neuronal activity. Here we show that all this can be accomplished by a memory-resistor (memristor for short). In particular, by using simple and inexpensive off-the-shelf components we have built a memristor emulator which realizes all required synaptic properties. Most importantly, we have demonstrated experimentally the formation of associative memory in a simple neural network consisting of three electronic neurons connected by two memristor-emulator synapses. This experimental demonstration opens up new possibilities in the understanding of neural processes using memory devices, an important step forward to reproduce complex learning, adaptive and spontaneous behaviour with electronic neural networks.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Ionic Memcapacitive Effects in Nanopores

Using molecular dynamics simulations, we show that, when subject to a periodic external electric field, a nanopore in ionic solution acts as a capacitor with memory (memcapacitor) at various frequencies and strengths of the electric field. Most importantly, the hysteresis loop of this memcapacitor shows both negative and diverging capacitance as a function of the voltage. The origin of this effect stems from the slow polarizability of the ionic solution due to the finite mobility of ions in water. We develop a microscopic quantitative model which captures the main features we observe in the simulations and suggest experimental tests of our predictions. We also suggest a possible memory mechanism due to the transport of ions through the nanopore itself, which may be observed at small frequencies. These effects may be important in both DNA sequencing proposals using nanopores and possibly in the dynamics of action potentials in neurons.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Memory effects in complex materials and nanoscale systems

Memory effects are ubiquitous in nature and are particularly relevant at the nanoscale where the dynamical properties of electrons and ions strongly depend on the history of the system, at least within certain time scales. We review here the memory properties of various materials and systems which appear most strikingly in their non-trivial time-dependent resistive, capacitative and inductive characteristics. We describe these characteristics within the framework of memristors, memcapacitors and meminductors, namely memory circuit elements whose properties depend on the history and state of the system. We examine basic issues related to such systems and critically report on both theoretical and experimental progress in understanding their functionalities. We also discuss possible applications of memory effects in various areas of science and technology ranging from digital to analog electronics, biologically-inspired circuits, and learning. We finally discuss future research opportunities in the field.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Radial Spin Helix in Two-Dimensional Electron Systems with Rashba Spin-Orbit Coupling

We suggest a long-lived spin polarization structure, a radial spin helix, and study its relaxation dynamics. For this purpose, starting with a simple and physically clear consideration of spin transport, we derive a system of equations for spin polarization density and find its general solution in the axially symmetric case. It is demonstrated that the radial spin helix of a certain period relaxes slower than homogeneous spin polarization and plain spin helix. Importantly, the spin polarization at the center of the radial spin helix stays almost unchanged at short times. At longer times, when the initial non-exponential relaxation region ends, the relaxation of the radial spin helix occurs with the same time constant as that describing the relaxation of the plain spin helix.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Effect of Spin-Orbit Interaction and In-Plane Magnetic Field on the Conductance of a Quasi-One-Dimensional System

We study the effect of spin-orbit interaction and in-plane effective magnetic field on the conductance of a quasi-one-dimensional ballistic electron system. The effective magnetic field includes the externally applied field, as well as the field due to polarized nuclear spins. The interplay of the spin-orbit interaction with effective magnetic field significantly modifies the band structure, producing additional sub-band extrema and energy gaps, introducing the dependence of the sub-band energies on the field direction. We generalize the Landauer formula at finite temperatures to incorporate these special features of the dispersion relation. The obtained formula describes the conductance of a ballistic conductor with an arbitrary dispersion relation.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Influence of Nuclear Spin Polarization on Quantum Wire Conductance

In this work, we study a possibility to measure the transverse and longitudinal relaxation times of a collection of polarized nuclear spins located in the region of a quantum wire via its conductance. The interplay of an external in-plane magnetic field, spin-orbit interaction, and the changing field of the spin-polarized nuclei cause the conductance of the quantum wire to evolve in time. We show that it is possible to extract the transverse and longitudinal relaxation times of the spin-polarized nuclei from the time dependence of the conductance.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Polarization of Nuclear Spins from the Conductance of Quantum Wire

We devise an approach to measure the polarization of nuclear spins via conductance measurements. Specifically, we study the combined effect of external magnetic field, nuclear spin polarization, and Rashba spin-orbit interaction on the conductance of a quantum wire. Nonequilibrium nuclear spin polarization affects the electron energy spectrum making it time-dependent. Changes in the extremal points of the spectrum result in time-dependence of the conductance. The conductance oscillation pattern can be used to obtain information about the amplitude of the nuclear spin polarization and extract the characteristic time scales of the nuclear spin subsystem.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

Focusing of Spin Polarization in Semiconductors by Inhomogeneous Doping

We study the evolution and distribution of non-equilibrium electron spin polarization in n-type semiconductors within the two-component drift-diffusion model in an applied electric field. Propagation of spin-polarized electrons through a boundary between two semiconductor regions with different doping levels is considered. We assume that inhomogeneous spin polarization is created locally and driven through the boundary by the electric field. The electric field distribution and spin polarization distribution are calculated numerically. We show that an initially created narrow region of spin polarization can be further compressed and amplified near the boundary. Since the boundary involves variation of doping but no real interface between two semiconductor materials, no significant spin-polarization loss is expected. The proposed mechanism will be therefore useful in designing new spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

Propagation of Spin-Polarized Electrons Through Interfaces Separating Differently Doped Semiconductor Regions

High degree of electron spin polarization is of crucial importance in operation of spintronic devices. We study the propagation of spin-polarized electrons through a boundary between two n-type semiconductor regions with different doping levels. We assume that inhomogeneous spin polarization is created/injected locally and driven through the boundary by the electric field. The electric field distribution and spin polarization distribution are calculated within a two-component drift-diffusion transport model. We show that an initially created narrow region of spin polarization can be further compressed and amplified near the boundary. Since the boundary involves variation of doping but no real interface between two semiconductor materials, no significant spin-polarization loss is expected. The proposed mechanism will be therefore useful in designing new spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

Slow Spin Relaxation in Two-Dimensional Electron Systems with Antidots

We report a Monte Carlo investigation of the effect of a lattice of antidots on spin relaxation in twodimensional electron systems. The spin relaxation time is calculated as a function of geometrical parameters describing the antidot lattice, namely, the antidot radius and the distance between their centers. It is shown that spin polarization relaxation can be efficiently suppressed by the chaotic spatial motion due to the antidot lattice. This phenomenon offers a new approach to spin coherence manipulation in spintronics devices.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

Spin Relaxation of Conduction Electrons in Semiconductors Due to Interaction with Nuclear Spins

Relaxation of conduction electron spins in a semiconductor owing to the hyperfine interaction with spin-1/2 nuclei, in zero applied magnetic field, is investigated. We calculate the electron spin relaxation time scales, in order to evaluate the importance of this relaxation mechanism. Master equations for the electron spin density matrix are derived and solved. Polarized nuclear spins can be used to polarize the electrons in spintronic devices.

0 citations0 reviewsNo code linkedOpen access