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Valeriy A. Slipko

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cond-mat.mes-hall Emerging Technologies cond-mat.mtrl-sci

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preprint2026arXiv

Low-Power Control of Resistance Switching Transitions in First-Order Memristors

In many cases, the behavior of physical memristive devices can be relatively well captured by using a single internal state variable. This study investigates the low-power control of first-order memristive devices to derive the most energy-efficient protocols for programming their resistances. A unique yet general approach to optimizing the switching transitions in devices of this kind is introduced. For pedagogical purposes, without loss of generality, the proposed control paradigm is applied to a couple of differential algebraic equation sets for voltage-controlled devices, specifically Kvatinsky's Voltage ThrEshold Adaptive Memristor mathematical description and Miranda's and Sune's dynamic balance model. It is demonstrated that, depending upon intrinsic physical properties of the device, captured in the model formulas and parameter setting, and upon constraints on programming time and voltages, the optimal protocol for either of the two switching scenarios may require the application of a single square voltage pulse of height set to a certain level within the admissible range across a fraction or entire given programming time interval, or of some more involved voltage stimulus of unique polarity, including analogue continuous waveforms that can be approximated by trains of square voltage pulses of different heights, over the entire programming time interval. The practical implications of these research findings are significant, as the development of energy-efficient protocols to program memristive devices, resolving the so-called voltage-time dilemma in the device physics community, is a subject under intensive and extensive studies across the academic community and industry.

preprint2026arXiv

Minimizing energy dissipation during programming of resistive switching memory devices using their dynamical attractor states

Under certain conditions, applying a sequence of voltage pulses of alternating polarities across a resistive switching memory device induces a finite number of fixed-point attractors in its time-averaged dynamics, known as dynamical attractors. Remarkably, dynamical attractors can be used to program analog values into the device state without supervision. Because different pulse sequences can produce the same trajectory solution for the state in the phase space, there is strong potential for optimization, particularly regarding the energy cost of the programming phase, which this study addresses. The proposed theory-based energy minimization strategy is applied to the voltage threshold adaptive memristor (VTEAM) model, which is known for its predictive capability and adaptability in fitting a large number of resistive switching memory devices. The optimization design crafts ad-hoc pulse sequences that minimize the energy required to program the device into a desired dynamical attractor. The theoretical approach is also extended to cover situations where a fast programming scheme should be adopted to serve time-critical electronics applications.

preprint2013arXiv

Nonequilibrium spin noise spectroscopy

Spin Noise Spectroscopy (SNS) is an experimental approach to obtain correlators of mesoscopic spin fluctuations in time by purely optical means. We explore the information that this technique can provide when it is applied to a weakly non-equilibrium regime when an electric current is driven through a sample by an electric field. We find that the noise power spectrum of conducting electrons experiences a shift, which is proportional to the strength of the spin-orbit coupling for electrons moving along the electric field direction. We propose applications of this effect to measurements of spin orbit coupling anisotropy and separation of spin noise of conducting and localized electrons.

preprint2013arXiv

Two-Beam Spin Noise Spectroscopy

We propose a method of two-beam spin noise spectroscopy to test the spin transport at equilibrium via analysis of correlations between time-shifted spin fluctuations at different space locations. This method allows one to determine the strength of spin-orbit interaction and spin relaxation time and separate spin noise of conducting electrons from the background noise of localized electrons. We formulate a theory of two-beam spin noise spectroscopy in semiconductor wires with Bychkov-Rashba spin-orbit interaction taking into account several possible spin relaxation channels and finite size of laser beams. Our theory predicts a peak shift with respect to the Larmor frequency to higher or lower frequencies depending on the strength of spin orbit interaction and distance between the beams. The two-beam spin noise spectroscopy could find applications in experimental studies of semiconductors, emergent materials and many other systems.

preprint2010arXiv

Radial Spin Helix in Two-Dimensional Electron Systems with Rashba Spin-Orbit Coupling

We suggest a long-lived spin polarization structure, a radial spin helix, and study its relaxation dynamics. For this purpose, starting with a simple and physically clear consideration of spin transport, we derive a system of equations for spin polarization density and find its general solution in the axially symmetric case. It is demonstrated that the radial spin helix of a certain period relaxes slower than homogeneous spin polarization and plain spin helix. Importantly, the spin polarization at the center of the radial spin helix stays almost unchanged at short times. At longer times, when the initial non-exponential relaxation region ends, the relaxation of the radial spin helix occurs with the same time constant as that describing the relaxation of the plain spin helix.