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Young Sun

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Published work

20 published item(s)

preprint2022arXiv

Comparison of skyrmion phases between poly and single-crystal MnSi by composite magnetoelectric method

We have explored the skyrmion phases and phase diagram of poly and single-crystal MnSi by the measurements of the magnetoelectric coefficient alfaE and ac magnetic susceptibility of the MnSi/PMN-PT composite. We found that the regular skyrmion lattice phase in single crystal sample has been averaged in the MnSi polycrystal due to random grain orientations which results in an extended skyrmion lattice-conical mixture phase down to 25 K. The magnitude of the out-of-phase component in alfaE of the polycrystal, not single crystal, decreases gradually with decreasing frequency. With the changing of the driven ac field, it reveals a depinning threshold behavior in both samples. The depinning field is stronger in the polycrystal than that in single crystal and maybe responsible for the diminishing of dissipative behavior at lower frequency due to grain boundaries and defects. The composite magnetoelectric method provides a unique approach to probe topological phase dynamics.

preprint2022arXiv

Tuning of Quantum Paraelectricity of M-type Hexaferrite BaFe12O19 by External Parameters

M-type hexaferrite BaFe12O19 was recently reported to be a new type of quantum paraelectrics with triangular lattice by showing a low temperature dielectric plateau due to quantum fluctuation. It has also been proposed to have a possible quantum-dipole liquid ground state. To suppress its quantum fluctuations and reach a possible quantum critical point, we have tuned its quantum paraelectricity in three ways: (i) 57Fe isotope replacement; (ii) in-plane compressive strain; and (iii) hydrostatic pressure. It is found that 95% 57Fe replacement and the in-plane strain are more effective to drive its ground state closer to a critical region by inducing a peak feature in the temperature dependence of dielectric constant. In contrast, the application of hydrostatic pressure pushed the system away from the quantum critical point by gradually suppressing the plateau feature in dielectric constant. Our combined efforts reveal the potential of the M-type hexaferrites for studying the quantum critical behaviors.

preprint2021arXiv

Reentrance of spin-driven ferroelectricity through rotational tunneling of ammonium

Quantum effects fundamentally engender exotic physical phenomena in macroscopic systems, which advance next-generation technological applications. Rotational tunneling that represents the quantum phenomenon of the librational motion of molecules is ubiquitous in hydrogen-contained materials. However, its direct manifestation in realizing macroscopic physical properties is elusive. Here we report an observation of reentrant ferroelectricity under low pressure that is mediated by the rotational tunneling of ammonium ions in molecule-based (NH$_4$)$_2$FeCl$_5 \cdot$H$_2$O. Applying a small pressure leads to a transition from spin-driven ferroelectricity to paraelectricity coinciding with the stabilization of a collinear magnetic phase. Such a transition is attributed to the hydrogen bond fluctuations via the rotational tunneling of ammonium groups as supported by theoretical calculations. Higher pressure lifts the quantum fluctuations and leads to a reentrant ferroelectric phase concomitant with another incommensurate magnetic phase. These results demonstrate that the rotational tunneling emerges as a new route to control magnetic-related properties in soft magnets, opening avenues for designing multi-functional materials and realizing potential quantum control.

preprint2020arXiv

Room-temperature giant magnetotranstance effect in single-phase multiferroics

Single-phase multiferroic materials are usually considered useless because of the weak magnetoelectric effects, low operating temperature, and small electric polarization induced by magnetic orders. As a result, current studies on applications of the magnetoelectric effects are mainly focusing on multiferroic heterostructures and composites. Here we report a room-temperature giant effect in response to external magnetic fields in single-phase multiferroics. A low magnetic field of 1000 Oe applied on the spin-driven multiferroic hexaferrites BaSrCo2Fe11AlO22 and Ba0.9Sr1.1Co2Fe11AlO22 is able to cause a huge change in the linear magnetoelectric coefficient by several orders, leading to a giant magnetotranstance (GMT) effect at room temperature. The GMT effect is comparable to the well-known giant magnetoresistance (GMR) effect in magnetic multilayers, and thus opens up a door toward practical applications for single-phase multiferroics.

preprint2017arXiv

Possible evidence for spin-transfer torque induced by spin-triplet supercurrent

Cooper pairs in superconductors are normally spin singlet. Nevertheless, recent studies suggest that spin-triplet Cooper pairs can be created at carefully engineered superconductor-ferromagnet interfaces. If Cooper pairs are spin-polarized they would transport not only charge but also a net spin component, but without dissipation, and therefore minimize the heating effects associated with spintronic devices. Although it is now established that triplet supercurrents exist, their most interesting property - spin - is only inferred indirectly from transport measurements. In conventional spintronics, it is well known that spin currents generate spin-transfer torques that alter magnetization dynamics and switch magnetic moments. The observation of similar effects due to spin-triplet supercurrents would not only confirm the net spin of triplet pairs but also pave the way for applications of superconducting spintronics. Here, we present a possible evidence for spin-transfer torques induced by triplet supercurrents in superconductor/ferromagnet/superconductor (S/F/S) Josephson junctions. Below the superconducting transition temperature T_c, the ferromagnetic resonance (FMR) field at X-band (~ 9.0 GHz) shifts rapidly to a lower field with decreasing temperature due to the spin-transfer torques induced by triplet supercurrents. In contrast, this phenomenon is absent in ferromagnet/superconductor (F/S) bilayers and superconductor/insulator/ferromagnet/superconductor (S/I/F/S) multilayers where no supercurrents pass through the ferromagnetic layer. These experimental observations are discussed with theoretical predictions for ferromagnetic Josephson junctions with precessing magnetization.

preprint2016arXiv

A multilevel nonvolatile magnetoelectric memory based on memtranstor

The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade. Here we propose a new principle to realize a multilevel nonvolatile memory based on the multiple states of the magnetoelectric coefficient (α) of multiferroics. Because the states of α depends on the relative orientation between magnetization and polarization, one can reach different levels of α by controlling the ratio of up and down ferroelectric domains with external electric fields. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure confirm that the states of α can be well controlled between positive and negative by applying selective electric fields. Consequently, two-level, four-level, and eight-level nonvolatile memory devices are demonstrated at room temperature. This kind of multilevel magnetoelectric memory retains all the advantages of ferroelectric random access memory but overcomes the drawback of destructive reading of polarization. In contrast, the reading of α is nondestructive and highly efficient in a parallel way, with an independent reading coil shared by all the memory cells.

preprint2016arXiv

A non-volatile memory based on nonlinear magnetoelectric effects

The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a butterfly-shaped hysteresis loop. The principle is to utilize the states of the magnetoelectric coefficient, instead of magnetization, electric polarization or resistance, to store binary information. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure clearly demonstrate that the sign of the magnetoelectric coefficient can be repeatedly switched between positive and negative by applying electric fields, confirming the feasibility of this principle. This kind of non-volatile memory has outstanding practical virtues such as simple structure, easy operations in writing and reading, low power, fast speed, and diverse materials available.

preprint2016arXiv

Electromagnon in the Z-type hexaferrite $({\rm Ba}_{x}{\rm Sr}_{1-x})_3\rm Co_2Fe_{24}O_{41}$

We studied experimentally the high-temperature magnetoelectric $({\rm Ba}_{x}{\rm Sr}_{1-x})_3\rm Co_2Fe_{24}O_{41}$ prepared as ceramics (x = 0, 0.2) and a single crystal (x = 0.5) using inelastic neutron scattering, THz time-domain, Raman and far-infrared spectroscopies. The spectra, measured with varying temperature and magnetic field, reveal rich information about the collective spin and lattice excitations. In the ceramics, we observed an infrared-active magnon which is absent in $E^ω\perp z$ polarized THz spectra of the crystal, and we assume that it is an electromagnon active in $E^ω \| z$ polarized spectra. On heating from 7 to 250 K, the frequency of this electromagnon drops from 36 to 25 cm$^{-1}$ and its damping gradually increases, so it becomes overdamped at room temperature. Applying external magnetic field has a similar effect on the damping and frequency of the electromagnon, and the mode is no more observable in the THz spectra above 2 T, as the transverse-conical magnetic structure transforms into a collinear one. Raman spectra reveal another spin excitation with a slightly different frequency and much higher damping. Upon applying magnetic field higher than 3 T, in the low-frequency part of the THz spectra, a narrow excitation appears whose frequency linearly increases with magnetic field. We interpret this feature as the ferromagnetic resonance.

preprint2016arXiv

Nonvolatile Multi-level Memory and Boolean Logic Gates Based on a Single Memtranstor

Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to multi-level nonvolatile memory, we demonstrate here that nonvolatile logic gates such as NOR and NAND can be implemented in a single memtranstor made of the Ni/PMN-PT/Ni heterostructure. After applying two sequent voltage pulses (X1, X2) as the logic inputs on the memtranstor, the output magnetoelectric voltage can be positive high (logic "1"), positive low (logic "0"), or negative (logic "0"), depending on the levels of X1 and X2. The underlying physical mechanism is related to the complete or partial reversal of ferroelectric polarization controlled by inputting selective voltage pulses, which determines the magnitude and sign of the magnetoelectric voltage coefficient. The combined functions of both memory and logic could enable the memtranstor as a promising candidate for future computing systems beyond von Neumann architecture.

preprint2015arXiv

High Electron Mobility and Large Magnetoresistance in the Half-Heusler Semimetal LuPtBi

Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magneto-electric devices. Here, we report on the discovery of an electron-hole-compensated half-Heusler semimetal LuPtBi that exhibits an extremely high electron mobility of up to 79000 cm2/Vs with a non-saturating positive MR as large as 3200% at 2 K. Remarkably, the mobility at 300 K is found to exceed 10500 cm2/Vs, which is among the highest values reported in three-dimensional bulk materials thus far. The clean Shubnikov-de Haas quantum oscillation observed at low temperatures and the first-principles calculations together indicate that the high electron mobility is due to a rather small effective carrier mass caused by the distinctive band structure of the crystal. Our finding provide a new approach for finding large, high-mobility MR materials by designing an appropriate Fermi surface topology starting from simple electron-hole-compensated semimetals.

preprint2015arXiv

Proximity effect between a topological insulator and a magnetic insulator with large perpendicular anisotropy

We report that thin films of a prototype topological insulator, Bi$_{2}$Se$_{3}$, can be epitaxially grown onto the (0001) surface of BaFe$_{12}$O$_{19}$(BaM), a magnetic insulator with high Curie temperature and large perpendicular anisotropy. In the Bi$_2$Se$_3$ thin films grown on non-magnetic substrates, classic weak antilocalization (WAL) is manifested as cusp-shaped positive magnetoresistance (MR) in perpendicular magnetic fields and parabola-shaped positive MR in parallel fields, whereas in Bi$_{2}$Se$_{3}$/BaM heterostructures the low field MR is parabola-shaped, which is positive in perpendicular fields and negative in parallel fields. The magnetic field and temperature dependence of the MR is explained as a consequence of the suppression of WAL due to strong magnetic interactions at the Bi$_{2}$Se$_{3}$/BaM interface.

preprint2015arXiv

Quantum Critical Point study in Multiferroic Hexaferrites: BaFe12O19, SrFe12O19, and PbFe3Ga9O19 -- Verification of the Khmelnitskii Theory

BaFe12O19 is a popular M-type hexaferrite with T(Neel) = 720 K of enormous commercial value (3 billion dollars/year). It exhibits an incipient ferroelectric phase transition (in violation of the Spaldin-Hill rule) extrapolated to lie at 6.0 K Kelvin but suppressed due to quantum fluctuations (as in SrTiO3). The QCP theory of Khmelnitskii for such uniaxial ferroelectrics predicts that the inverse isothermal electric susceptibility varies as T cubed, in contrast to that for pseudo-cubic materials such as SrTiO3 or KTaO3, a hypothesis we verify.

preprint2015arXiv

Quantum electric-dipole liquid on a triangular lattice

Geometric frustrations and quantum mechanical fluctuations may prohibit the formation of long-range ordering even at the lowest temperature, and therefore liquid-like ground states could be expected. A good example is the quantum spin liquid in frustrated magnets that represents an exotic phase of matter and is attracting enormous interests. Geometric frustrations and quantum fluctuations can happen beyond magnetic systems. Here we propose that quantum electric-dipole liquids, analogs to quantum spin liquids, could emerge in frustrated dielectrics where antiferroelectrically coupled small electric dipoles reside on a triangular lattice. The quantum paraelectric hexaferrite BaFe12O19, in which small electric dipoles originated from the off-center displacement of Fe3+ in the FeO5 bipyramids constitute a two-dimensional triangular lattice, represents a promising candidate to generate the anticipated electric-dipole liquid. We present a series of experimental evidences, including dielectric permittivity, heat capacity, and thermal conductivity measured down to 66 mK, to reveal the existence of a nontrivial ground state in BaFe12O19, characterized by itinerant low-energy excitations with a small gap, to which we interpret as an exotic liquid-like quantum phase. The quantum electric-dipole liquids in frustrated dielectrics open up a fresh playground for fundamental physics and may find applications in quantum information and computation as well.

preprint2015arXiv

Towards the Complete Relational Graph of Fundamental Circuit Elements

A complete and harmonized fundamental circuit relational graph with four linear and four memory elements is constructed based on newly defined elements, which provides a guide to developing novel circuit functionalities in the future. In addition to resistor, capacitor and inductor which are defined in terms of a linear relationship between the charge q, the current i, the voltage v, and the magnetic flux, Chua proposed in 1971 the fourth linear circuit element to directly relate magnetic flux and charge. A non-linear resistive device defined in memory i-v relation and dubbed memristor, was later attributed to such an element and has been realized in various material structures. Here we clarify that the memristor is not the true fourth fundamental circuit element but the memory extension to the concept of resistor, in analogy to the extension of memcapacitor to capacitor and meminductor to inductor. Instead, a two-terminal device employing the linear magnetoelectric effects, termed transtor, possesses the function of relating directly flux and charge and should take the position of the fourth linear element. Moreover, its memory extension, termed memtranstor, is proposed and analyzed here.

preprint2014arXiv

Non-d$^0$ Electric Dipole in FeO$_5$ bipyramid: a New Resource for Quantum Paraelectrics, Ferroelectrics and Multiferroics

Electric polarization in conventional ferroelectric oxides usually involves nonmagnetic transition-metal ions with an empty d shell (the d$^0$ rule). Here we unravel a new mechanism for local electric dipoles based on magnetic Fe$^{3+}$ (3d$^5$) ion violating the d$^0$ rule. The competition between the long-range Coulomb interaction and short-range Pauli repulsion in a FeO$_5$ bipyramid with proper lattice parameters would favor an off-center displacement of Fe$^{3+}$ that induces a local electric dipole. The manipulation of this kind of non-d$^0$ electric dipoles opens up a new route for generating unconventional dielectrics, ferroelectrics, and multiferroics. As a prototype example, we show that the non-d$^0$ electric dipoles in ferrimagnetic hexaferrites (Ba,Sr)Fe$_{12}$O$_{19}$ lead to a new family of magnetic quantum paraelectrics.

preprint2013arXiv

Giant exchange bias in a single-phase magnet with two magnetic sublattices

Exchange bias phenomenon is generally ascribed to the exchange coupling at the interfaces between ferromagnetic and antiferromagnetic layers. Here, we propose a bulk form of exchange bias in a single-phase magnet where the coupling between two magnetic sublattices induces a significant shift of the coercive field after a field cooling. Our experiments in a complicated magnet YbFe2O4 demonstrate a giant exchange bias at low temperature when the coupling between the Yb3+ and Fe2+/Fe3+ sublattices take places. The cooling magnetic field dependence and the training effect of exchange bias are consistent with our model. In strong contrast to conventional interfacial exchange bias, this bulk form of exchange bias can be huge, reaching the order of a few Tesla.

preprint2011arXiv

Low magnetic field reversal of electric polarization in a Y-type hexaferrite

Magnetoelectric multiferroics in which ferroelectricity and magnetism coexist have attracted extensive attention because they provide great opportunities for the mutual control of electric polarization by magnetic fields and magnetization by electric fields. From a practical point view, the main challenge in this field is to find proper multiferroic materials with a high operating temperature and great magnetoelectric sensitivity. Here we report on the magnetically tunable ferroelectricity and the giant magnetoelectric sensitivity up to 250 K in a Y-type hexaferrite, BaSrCoZnFe11AlO22. Not only the magnitude but also the sign of electric polarization can be effectively controlled by applying low magnetic fields (a few hundreds of Oe) that modifies the spiral magnetic structures. The magnetically induced ferroelectricity is stabilized even in zero magnetic field. Decayless reproducible flipping of electric polarization by oscillating low magnetic fields is shown. The maximum linear magnetoelectric coefficient reaches a high value of ~ 3.0\times10^3 ps/m at 200 K.

preprint2009arXiv

Electrical Control of Magnetization in Charge-ordered Multiferroic LuFe2O4

LuFe2O4 exhibits multiferroicity due to charge order on a frustrated triangular lattice. We find that the magnetization of LuFe2O4 in the multiferroic state can be electrically controlled by applying voltage pulses. Depending on with or without magnetic fields, the magnetization can be electrically switched up or down. We have excluded thermal heating effect and attributed this electrical control of magnetization to an intrinsic magnetoelectric coupling in response to the electrical breakdown of charge ordering. Our findings open up a new route toward electrical control of magnetization.

preprint2009arXiv

Photoinduced magnetization change in multiferroic YbFe2O4

We have studied the influence of laser illumination on the magnetization in multiferroic YbFe2O4 single crystals. A photoinduced magnetization change has been confirmed in both ab plane and c axis direction. The temperature dependence of the photoinduced magnetization reduction excludes laser heating as the cause. In terms of the breakdown of charge order driven by laser illumination, the photoinduced magnetization change provides a strong evidence for the spin-charge coupling in YbFe2O4. This photomagnetic effect based on charge-order-induced multiferroicity could be used for non-thermal optical control of magnetization.

preprint2005arXiv

Unusual Exchange Bias Associated with Phase Separation in Perovskite Cobaltites

We report the observation of unusual exchange bias phenomena in the doped perovskite cobaltites La_{1-x}Sr_{x}CoO_{3} (x = 0.15, 0.18, and 0.30) in which a spontaneous phase separation into ferromagnetic clusters embedded in a non-ferromagnetic matrix occurs. When the La_{1-x}Sr_{x}CoO_{3} samples are cooled in a static magnetic field through a freezing temperature, the magnetization hysteresis loops exhibit exchange bias, i.e., the loops shift to the negative field and the magnetization becomes asymmetric. Moreover, exchange bias disappears when the measuring magnetic field is high enough. These results suggest that the intrinsic phase inhomogeniety in a spontaneously phase-separated system may induce an interfacial exchange anisotropy after a field cooling. The diminution of exchange bias in high magnetic fields is ascribed to the propagation of ferromagnetic regions with increasing magnetic field.