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Dashan Shang

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Published work

6 published item(s)

preprint2021arXiv

Echo state graph neural networks with analogue random resistor arrays

Recent years have witnessed an unprecedented surge of interest, from social networks to drug discovery, in learning representations of graph-structured data. However, graph neural networks, the machine learning models for handling graph-structured data, face significant challenges when running on conventional digital hardware, including von Neumann bottleneck incurred by physically separated memory and processing units, slowdown of Moore's law due to transistor scaling limit, and expensive training cost. Here we present a novel hardware-software co-design, the random resistor array-based echo state graph neural network, which addresses these challenges. The random resistor arrays not only harness low-cost, nanoscale and stackable resistors for highly efficient in-memory computing using simple physical laws, but also leverage the intrinsic stochasticity of dielectric breakdown to implement random projections in hardware for an echo state network that effectively minimizes the training cost thanks to its fixed and random weights. The system demonstrates state-of-the-art performance on both graph classification using the MUTAG and COLLAB datasets and node classification using the CORA dataset, achieving 34.2x, 93.2x, and 570.4x improvement of energy efficiency and 98.27%, 99.46%, and 95.12% reduction of training cost compared to conventional graph learning on digital hardware, respectively, which may pave the way for the next generation AI system for graph learning.

preprint2020arXiv

Large-area printing of ferroelectric surface and super-domains for efficient solar water splitting

Surface electronic structures of the photoelectrodes determine the activity and efficiency of the photoelectrochemical water splitting, but the controls of their surface structures and interfacial chemical reactions remain challenging. Here, we use ferroelectric BiFeO3 as a model system to demonstrate an efficient and controllable water splitting reaction by large-area constructing the hydroxyls-bonded surface. The up-shift of band edge positions at this surface enables and enhances the interfacial holes and electrons transfer through the hydroxyl-active-sites, leading to simultaneously enhanced oxygen and hydrogen evolutions. Furthermore, printing of ferroelectric super-domains with microscale checkboard up/down electric fields separates the distribution of reduction/oxidation catalytic sites, enhancing the charge separation and giving rise to an order of magnitude increase of the photocurrent. This large-area printable ferroelectric surface and super-domains offer an alternative platform for controllable and high-efficient photocatalysis.

preprint2016arXiv

A multilevel nonvolatile magnetoelectric memory based on memtranstor

The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade. Here we propose a new principle to realize a multilevel nonvolatile memory based on the multiple states of the magnetoelectric coefficient (α) of multiferroics. Because the states of α depends on the relative orientation between magnetization and polarization, one can reach different levels of α by controlling the ratio of up and down ferroelectric domains with external electric fields. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure confirm that the states of α can be well controlled between positive and negative by applying selective electric fields. Consequently, two-level, four-level, and eight-level nonvolatile memory devices are demonstrated at room temperature. This kind of multilevel magnetoelectric memory retains all the advantages of ferroelectric random access memory but overcomes the drawback of destructive reading of polarization. In contrast, the reading of α is nondestructive and highly efficient in a parallel way, with an independent reading coil shared by all the memory cells.

preprint2016arXiv

A non-volatile memory based on nonlinear magnetoelectric effects

The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a butterfly-shaped hysteresis loop. The principle is to utilize the states of the magnetoelectric coefficient, instead of magnetization, electric polarization or resistance, to store binary information. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure clearly demonstrate that the sign of the magnetoelectric coefficient can be repeatedly switched between positive and negative by applying electric fields, confirming the feasibility of this principle. This kind of non-volatile memory has outstanding practical virtues such as simple structure, easy operations in writing and reading, low power, fast speed, and diverse materials available.

preprint2016arXiv

Nonvolatile Multi-level Memory and Boolean Logic Gates Based on a Single Memtranstor

Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to multi-level nonvolatile memory, we demonstrate here that nonvolatile logic gates such as NOR and NAND can be implemented in a single memtranstor made of the Ni/PMN-PT/Ni heterostructure. After applying two sequent voltage pulses (X1, X2) as the logic inputs on the memtranstor, the output magnetoelectric voltage can be positive high (logic "1"), positive low (logic "0"), or negative (logic "0"), depending on the levels of X1 and X2. The underlying physical mechanism is related to the complete or partial reversal of ferroelectric polarization controlled by inputting selective voltage pulses, which determines the magnitude and sign of the magnetoelectric voltage coefficient. The combined functions of both memory and logic could enable the memtranstor as a promising candidate for future computing systems beyond von Neumann architecture.

preprint2015arXiv

Towards the Complete Relational Graph of Fundamental Circuit Elements

A complete and harmonized fundamental circuit relational graph with four linear and four memory elements is constructed based on newly defined elements, which provides a guide to developing novel circuit functionalities in the future. In addition to resistor, capacitor and inductor which are defined in terms of a linear relationship between the charge q, the current i, the voltage v, and the magnetic flux, Chua proposed in 1971 the fourth linear circuit element to directly relate magnetic flux and charge. A non-linear resistive device defined in memory i-v relation and dubbed memristor, was later attributed to such an element and has been realized in various material structures. Here we clarify that the memristor is not the true fourth fundamental circuit element but the memory extension to the concept of resistor, in analogy to the extension of memcapacitor to capacitor and meminductor to inductor. Instead, a two-terminal device employing the linear magnetoelectric effects, termed transtor, possesses the function of relating directly flux and charge and should take the position of the fourth linear element. Moreover, its memory extension, termed memtranstor, is proposed and analyzed here.