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Yisheng Chai

Yisheng Chai appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hallcond-mat.supr-conEmerging Technologies

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Published work

16 published item(s)

preprint2026arXiv

Revival of Strain Susceptibilities: Magnetostrictive Coefficient and Thermal-Expansion Coefficient

In thermodynamics, volume is an essential extensive variable. Strain-line, area, or volume change-therefore offers a direct window into correlated quantum matter: tiny length changes ΔL track how the lattice responds when state variables such as magnetic field H and/or temperature T are varied, revealing phases, transitions, and dynamics. Direct, high-precision strain measurements are already difficult; their susceptibilities are harder still. Very recently, several direct techniques have made vital progress on two key quantities: the magnetostrictive coefficient dλ/dH (often denoted qijk or dij in the magnetostriction literatures), and the linear thermal-expansion coefficient α= dλ/dT. Considering these two strain susceptibilities together-they are fundamental and complementary-clarifies why these thermodynamic properties merit renewed attention.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

Electrical and thermal transport properties of kagome metals AV$_3$Sb$_5$ (A=K, Rb, Cs)

The interplay between lattice geometry, band topology and electronic correlations in the newly discovered kagome compounds AV$_3$Sb$_5$ (A=K, Rb, Cs) makes this family a novel playground to investigate emergent quantum phenomena, such as unconventional superconductivity, chiral charge density wave and electronic nematicity. These exotic quantum phases naturally leave nontrivial fingerprints in transport properties of AV$_3$Sb$_5$, both in electrical and thermal channels, which are prominent probes to uncover the underlying mechanisms. In this brief review, we highlight the unusual electrical and thermal transport properties observed in the unconventional charge ordered state of AV3Sb5, including giant anomalous Hall, anomalous Nernst, ambipolar Nernst and anomalous thermal Hall effects. Connections of these anomalous transport properties to time-reversal symmetry breaking, topological and multiband fermiology, as well as electronic nematicity, are also discussed. Finally, a perspective together with challenges of this rapid growing field are given.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Comparison of skyrmion phases between poly and single-crystal MnSi by composite magnetoelectric method

We have explored the skyrmion phases and phase diagram of poly and single-crystal MnSi by the measurements of the magnetoelectric coefficient alfaE and ac magnetic susceptibility of the MnSi/PMN-PT composite. We found that the regular skyrmion lattice phase in single crystal sample has been averaged in the MnSi polycrystal due to random grain orientations which results in an extended skyrmion lattice-conical mixture phase down to 25 K. The magnitude of the out-of-phase component in alfaE of the polycrystal, not single crystal, decreases gradually with decreasing frequency. With the changing of the driven ac field, it reveals a depinning threshold behavior in both samples. The depinning field is stronger in the polycrystal than that in single crystal and maybe responsible for the diminishing of dissipative behavior at lower frequency due to grain boundaries and defects. The composite magnetoelectric method provides a unique approach to probe topological phase dynamics.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Physical realization of topological Roman surface by spin-induced ferroelectric polarization in cubic lattice

Topology, a mathematical concept in geometry, has become an ideal theoretical tool for describing topological states and phase transitions. Many topological concepts have found their physical entities in real or reciprocal spaces identified by topological/geometrical invariants, which are usually defined on orientable surfaces such as torus and sphere. It is natural to quest whether it is possible to find the physical realization of more intriguing non-orientable surfaces. Herein, we show that the set of spin-induced ferroelectric polarizations in cubic perovskite oxides AMn3Cr4O12 (A = La and Tb) resides on the topological Roman surface, a non-orientable two-dimensional manifold formed by sewing a Mobius strip edge to that of a disc. The induced polarization may travel in a loop along the non-orientable Mobius strip or orientable disc depending on how the spin evolves as controlled by external magnetic field. Experimentally, the periodicity of polarization can be the same or the twice of the rotating magnetic field, being well consistent with the orientability of disc and Mobius strip, respectively. This path dependent topological magnetoelectric effect presents a way to detect the global geometry of the surface and deepens our understanding of topology in both mathematics and physics

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preprint2022arXiv

Tuning of Quantum Paraelectricity of M-type Hexaferrite BaFe12O19 by External Parameters

M-type hexaferrite BaFe12O19 was recently reported to be a new type of quantum paraelectrics with triangular lattice by showing a low temperature dielectric plateau due to quantum fluctuation. It has also been proposed to have a possible quantum-dipole liquid ground state. To suppress its quantum fluctuations and reach a possible quantum critical point, we have tuned its quantum paraelectricity in three ways: (i) 57Fe isotope replacement; (ii) in-plane compressive strain; and (iii) hydrostatic pressure. It is found that 95% 57Fe replacement and the in-plane strain are more effective to drive its ground state closer to a critical region by inducing a peak feature in the temperature dependence of dielectric constant. In contrast, the application of hydrostatic pressure pushed the system away from the quantum critical point by gradually suppressing the plateau feature in dielectric constant. Our combined efforts reveal the potential of the M-type hexaferrites for studying the quantum critical behaviors.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Angle dependent field-driven reorientation transitions in uniaxial antiferromagnet MnBi$_2$Te$_4$ single crystal

MnBi$_2$Te$_4$, a two-dimensional magnetic topological insulator with a uniaxial antiferromagnetic structure, is an ideal platform to realize quantum anomalous Hall effect. However, the strength of magnetic interactions is not clear yet. We performed systematic studies on the magnetization and angle dependent magnetotransport of MnBi$_2$Te$_4$ single crystal. The results show that the direction of the magnetic field has significant effects on the critical field values and magnetic structure of this compound, which leads to different magnetotransport behaviors. The field-driven reorientation transitions can be utilized to estimate the AFM interlayer exchange interaction coupling and uniaxial magnetic anisotropy D. The obtained Hamiltonian can well explain the experimental data by Monte Carlo simulations. Our comprehensive studies on the field-driven magnetic transitions phenomenon in MnBi$_2$Te$_4$ provide a general approach for other topological systems with antiferromagnetism.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

The microscopic origin of the spin-induced linear and quadratic magnetoelectric effects

Understanding of the intimate cross-coupling between electric and magnetic degrees of freedom in solids usually requires sophisticated models and time-consuming calculation methods. Instead of macroscopic symmetry analysis, we present a simple but general approach to explore the microscopic mechanism of magnetoelectric (ME) effects in magnetic ordered materials based on local spin and lattice symmetry analysis. Our methods are successfully applied to Cr$_2$O$_3$ and orthorhombic RMnO$_3$ with linear and quadratic ME effects, respectively. We revealed all the possible microscopic origins of every non-zero ME coefficients that cannot be easily fulfilled by other theoretical methods. Moreover, the contribution from each mechanism can be located down to specific spins or spin pairs. Our theoretical approach is capable of providing a detailed guide to explore rich spin-induced magnetoelectrics with strong ME effects.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Magnetic mixed valent semimetal EuZnSb$_2$ with Dirac states in the band structure

We report discovery of new antiferromagnetic semimetal EuZnSb$_2$, obtained and studied in the form of single crystals. Electric resistivity, magnetic susceptibility and heat capacity indicate antiferromagnetic order of Eu with $T_N$ = 20 K. The effective moment of Eu$^{2+}$ inferred from the magnetization and specific heat measurement is 3.5 $μ_B$, smaller than the theoretical value of Eu$^{2+}$ due to presence of both Eu$^{3+}$ and Eu$^{2+}$. Magnetic field-dependent resistivity measurements suggest dominant quasi two dimensional Fermi surfaces whereas the first-principle calculations point to the presence of Dirac fermions. Therefore, EuZnSb$_2$ could represent the first platform to study the interplay of dynamical charge fluctuations, localized magnetic 4$f$ moments and Dirac states with Sb orbital character.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

A multilevel nonvolatile magnetoelectric memory based on memtranstor

The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade. Here we propose a new principle to realize a multilevel nonvolatile memory based on the multiple states of the magnetoelectric coefficient (α) of multiferroics. Because the states of α depends on the relative orientation between magnetization and polarization, one can reach different levels of α by controlling the ratio of up and down ferroelectric domains with external electric fields. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure confirm that the states of α can be well controlled between positive and negative by applying selective electric fields. Consequently, two-level, four-level, and eight-level nonvolatile memory devices are demonstrated at room temperature. This kind of multilevel magnetoelectric memory retains all the advantages of ferroelectric random access memory but overcomes the drawback of destructive reading of polarization. In contrast, the reading of α is nondestructive and highly efficient in a parallel way, with an independent reading coil shared by all the memory cells.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

A non-volatile memory based on nonlinear magnetoelectric effects

The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a butterfly-shaped hysteresis loop. The principle is to utilize the states of the magnetoelectric coefficient, instead of magnetization, electric polarization or resistance, to store binary information. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure clearly demonstrate that the sign of the magnetoelectric coefficient can be repeatedly switched between positive and negative by applying electric fields, confirming the feasibility of this principle. This kind of non-volatile memory has outstanding practical virtues such as simple structure, easy operations in writing and reading, low power, fast speed, and diverse materials available.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Nonvolatile Multi-level Memory and Boolean Logic Gates Based on a Single Memtranstor

Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to multi-level nonvolatile memory, we demonstrate here that nonvolatile logic gates such as NOR and NAND can be implemented in a single memtranstor made of the Ni/PMN-PT/Ni heterostructure. After applying two sequent voltage pulses (X1, X2) as the logic inputs on the memtranstor, the output magnetoelectric voltage can be positive high (logic "1"), positive low (logic "0"), or negative (logic "0"), depending on the levels of X1 and X2. The underlying physical mechanism is related to the complete or partial reversal of ferroelectric polarization controlled by inputting selective voltage pulses, which determines the magnitude and sign of the magnetoelectric voltage coefficient. The combined functions of both memory and logic could enable the memtranstor as a promising candidate for future computing systems beyond von Neumann architecture.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

High Electron Mobility and Large Magnetoresistance in the Half-Heusler Semimetal LuPtBi

Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magneto-electric devices. Here, we report on the discovery of an electron-hole-compensated half-Heusler semimetal LuPtBi that exhibits an extremely high electron mobility of up to 79000 cm2/Vs with a non-saturating positive MR as large as 3200% at 2 K. Remarkably, the mobility at 300 K is found to exceed 10500 cm2/Vs, which is among the highest values reported in three-dimensional bulk materials thus far. The clean Shubnikov-de Haas quantum oscillation observed at low temperatures and the first-principles calculations together indicate that the high electron mobility is due to a rather small effective carrier mass caused by the distinctive band structure of the crystal. Our finding provide a new approach for finding large, high-mobility MR materials by designing an appropriate Fermi surface topology starting from simple electron-hole-compensated semimetals.

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preprint2015arXiv

Towards the Complete Relational Graph of Fundamental Circuit Elements

A complete and harmonized fundamental circuit relational graph with four linear and four memory elements is constructed based on newly defined elements, which provides a guide to developing novel circuit functionalities in the future. In addition to resistor, capacitor and inductor which are defined in terms of a linear relationship between the charge q, the current i, the voltage v, and the magnetic flux, Chua proposed in 1971 the fourth linear circuit element to directly relate magnetic flux and charge. A non-linear resistive device defined in memory i-v relation and dubbed memristor, was later attributed to such an element and has been realized in various material structures. Here we clarify that the memristor is not the true fourth fundamental circuit element but the memory extension to the concept of resistor, in analogy to the extension of memcapacitor to capacitor and meminductor to inductor. Instead, a two-terminal device employing the linear magnetoelectric effects, termed transtor, possesses the function of relating directly flux and charge and should take the position of the fourth linear element. Moreover, its memory extension, termed memtranstor, is proposed and analyzed here.

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preprint2013arXiv

Giant exchange bias in a single-phase magnet with two magnetic sublattices

Exchange bias phenomenon is generally ascribed to the exchange coupling at the interfaces between ferromagnetic and antiferromagnetic layers. Here, we propose a bulk form of exchange bias in a single-phase magnet where the coupling between two magnetic sublattices induces a significant shift of the coercive field after a field cooling. Our experiments in a complicated magnet YbFe2O4 demonstrate a giant exchange bias at low temperature when the coupling between the Yb3+ and Fe2+/Fe3+ sublattices take places. The cooling magnetic field dependence and the training effect of exchange bias are consistent with our model. In strong contrast to conventional interfacial exchange bias, this bulk form of exchange bias can be huge, reaching the order of a few Tesla.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Theoretical Modeling of ME effect at Low frequency and Resonance Frequency for Magnetoelectric Laminates with Anisotropic Piezoelectric Properties

A new theory is developed for the magnetoelectric (ME) coupling in a symmetric 2-2 ME laminate having a representative piezoelectric crystal (PMN-PT) particularly with anisotropic piezoelectric properties. Considering the average field method, the theoretical expressions for the transverse ME voltage coefficients at low and resonance frequencies were derived. The theory takes into account the anisotropic properties of the piezoelectric materials providing two different expressions of transverse ME voltage coefficients for different in-plane magnetic fields both at low and resonance frequencies. The numerical simulations show multiple resonance frequencies and phase differences between transverse ME voltage coefficients showing good agreement with the experimental results. Our theory should be generally applicable to other ME laminates with any piezoelectric with anisotropic piezoelectric coefficients.

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preprint2010arXiv

Thermal Transport Properties of Bechgaard Salts (TMTSF)2PF6 and (TMTSF)2ClO4: Implication of Spin-Charge Separation

We report thermal transport measurements performed on the quasi-one-dimensional Bechgaard salts (TMTSF)2ClO4 and (TMTSF)2PF6 along the a-direction. For both salts, magnon-drag effects are found to contribute considerably to thermopower above 80 K. These results imply spin-charge separation in the metallic state for both salts. Moreover, a linear temperature-dependent thermal conductivity is found to be unaffected by anion disorder below an anion ordering transition temperature TAO~25 K in (TMTSF)2ClO4.

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