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Researcher profile

Young Hee Lee

Young Hee Lee contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-el

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Published work

5 published item(s)

preprint2022arXiv

Observation of strange metal in hole-doped valley-spin insulator

Temperature-linear resistance at low temperatures in strange metals is an exotic characteristic of strong correlation systems, as observed in high-TC superconducting cuprates, heavy fermions, Fe-based superconductors, ruthenates, and twisted bilayer graphene. Here, we introduce a hole-doped valley-spin insulator, V-doped WSe2, with hole pockets in the valence band. The strange metal characteristic was observed in VxW1-xSe2 at a critical carrier concentration of 9.5 x 10^20 cm-3 from 150 K to 1.8 K. The unsaturated magnetoresistance is almost linearly proportional to the magnetic field. Using the ansatz R(H,T) - R(0,0) ~ [(alpha.k.T)^2+(gamma.mu.B)^2]^1/2, the gamma/alpha ratio is estimated approximately to 4, distinct from that for the quasiparticles of LSCO, BaFe2(As1-xPx)2 (gamma/alpha=1) and bosons of YBCO (gamma/alpha=2). Our observation opens up the possible routes that induce strong correlation and superconductivity in two-dimensional materials with strong spin-orbit coupling.

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preprint2021arXiv

Andreev reflection in the fractional quantum Hall state

We construct high-quality graphene-based van der Waals devices with narrow superconducting niobium nitride (NbN) electrodes, in which superconductivity and robust fqH coexist. We find crossed Andreev reflection (CAR) across the superconductor separating two fqH edges. Our observed CAR probabilities in the particle-like fractional fillings are markedly higher than those in the integer and hole-conjugate fractional fillings and depend strongly on temperature and magnetic field unlike the other fillings. Further, we find a filling-independent CAR probability in integer fillings, which we attribute to spin-orbit coupling in NbN allowing for Andreev reflection between spin-polarized edges. These results provide a route to realize novel topological superconducting phases in fqH-superconductor hybrid devices based on graphene and NbN.

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preprint2021arXiv

Evidence of shallow bandgap in ultra-thin 1T'-MoTe2 via infrared spectroscopy

Although van der Waals (vdW) layered MoS2 shows the phase transformation from the semiconducting 2H-phase to the metallic 1T-phase through chemical lithium intercalation, vdW MoTe2 is thermodynamically reversible between the 2H- and 1T'-phases, and can be further transformed by energetics, laser irradiation, strain or pressure, and electrical doping. Here, thickness- and temperature-dependent optical properties of 1T'-MoTe2 thin films grown by chemical vapor depsition are investigated via Fourier-transformed infrared spectroscopy. An optical gap of 28 +/- 2 meV in a 3-layer (or 2 nm) thick 1T'-MoTe2 is clearly observed at a low temperature region below 50K. No discernible optical bandgap is observed in samples thicker than ~4 nm. The observed thickness-dependent bandgap results agree with the measured dc resistivity data; the thickness-dependent 1T'-MoTe2 clearly demonstrates the metal-semiconductor transition at a crossover below the 2 nm-thick sample.

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preprint2020arXiv

Gate modulation of the long-range magnetic order in a vanadium-doped WSe2 semiconductor

We demonstrate the gate-tunability of the long-range magnetic order in a p-type V-doped WSe2 monolayer using ab initio calculations. We found that at a low V-doping concentration limit, the long-range ferromagnetic order is enhanced by increasing the hole density. In contrast, the short-range antiferromagnetic order is manifested at a high electron density by full compensation of the p-type V doping concentration. The hole-mediated long-range magnetic exchange is ~70 meV, thus strongly suggesting the ferromagnetism in V-doped WSe2 at room temperature. Our findings on strong coupling between charge and spin order in V-doped WSe2 provide plenty of room for multifunctional gate-tunable spintronics.

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preprint2020arXiv

Room-temperature ferromagnetism in monolayer WSe2 semiconductor via vanadium dopant

Diluted magnetic semiconductors including Mn-doped GaAs are attractive for gate-controlled spintronics but Curie transition at room temperature with long-range ferromagnetic order is still debatable to date. Here, we report the room-temperature ferromagnetic domains with long-range order in semiconducting V-doped WSe2 monolayer synthesized by chemical vapor deposition. Ferromagnetic order is manifested using magnetic force microscopy up to 360K, while retaining high on/off current ratio of ~105 at 0.1% V-doping concentration. The V-substitution to W sites keep a V-V separation distance of 5 nm without V-V aggregation, scrutinized by high-resolution scanning transmission-electron microscopy, which implies the possibility of the Ruderman-Kittel-Kasuya-Yoshida interaction (or Zener model) by establishing the long-range ferromagnetic order in V-doped WSe2 monolayer through free hole carriers. More importantly, the ferromagnetic order is clearly modulated by applying a back gate. Our findings open new opportunities for using two-dimensional transition metal dichalcogenides for future spintronics.

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