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Abdelmadjid Anane

Abdelmadjid Anane appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

11 published item(s)

preprint2026arXiv

Multiple three-magnon splittings in bismuth yttrium iron garnet nanostructures

We experimentally demonstrate the generation of multiple three-magnon splitting processes in an in-plane magnetized submicron Bi-YIG disk using micro-focused Brillouin light scattering. The low magnetic damping and strong magneto-optical response of BiYIG enable the detection of nonlinear spin-wave interactions at low threshold powers. By tuning the in-plane static magnetic field, excitation frequency, and power, we observe the generation of three pairs of secondary modes symmetrically distributed around half the excitation frequency. Time-resolved BLS measurements present temporal dynamics and threshold behavior associated with the successive activation of three-magnon pairs.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Terahertz spin-to-charge current conversion in stacks of ferromagnets and the transition-metal dichalcogenide NbSe$_2$

Transition-metal dichalcogenides (TMDCs) are an aspiring class of materials with unique electronic and optical properties and potential applications in spin-based electronics. Here, we use terahertz emission spectroscopy to study spin-to-charge current conversion (S2C) in the TMDC NbSe$_2$ in ultra-high-vacuum-grown F|NbSe$_2$ thin-film stacks, where F is a layer of ferromagnetic Fe or Ni. Ultrafast laser excitation triggers an ultrafast spin current that is converted into an in-plane charge current and, thus, a measurable THz electromagnetic pulse. The THz signal amplitude as a function of the NbSe$_2$ thickness shows that the measured signals are fully consistent with an ultrafast optically driven injection of an in-plane-polarized spin current into NbSe$_2$. Modeling of the spin-current dynamics reveals that a sizable fraction of the total S2C originates from the bulk of NbSe$_2$ with the same, negative, sign as the spin Hall angle of pure Nb. By quantitative comparison of the emitted THz radiation from F|NbSe$_2$ to F|Pt reference samples and the results of ab-initio calculations, we estimate that the spin Hall angle of NbSe$_2$ for an in-plane polarized spin current lies between -0.2% and -1.1%, while the THz spin-current relaxation length is of the order of a few nanometers.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Electrical measurement of magnetic-field-impeded polarity switching of a ferromagnetic vortex core

Vortex core polarity switching in NiFe disks has been evidenced using an all-electrical rectification scheme. Both simulation and experiments yield a consistent loss of the rectified signal when driving the core at high powers near its gyrotropic resonant frequency. The frequency range over which the loss occurs grows and shifts with increasing signal power, consistent with non-linear core dynamics and periodic switching of the core polarity induced by the core attaining its critical velocity. We demonstrate that core polarity switching can be impeded by displacing the core towards the disk's edge where an increased core stiffness reduces the maximum attainable core velocity.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Spin to charge conversion in MoS$_{2}$ monolayer with spin pumping

Layered transition-metal dichalcogenides (TMDs) family are gaining increasing importance due to their unique electronic band structures, promising interplay among light, valley (pseudospin), charge and spin degrees of freedom. They possess large intrinsic spin-orbit interaction which make them most relevant for the emerging field of spin-orbitronics. Here we report on the conversion of spin current to charge current in MoS2 monolayer. Using spin pumping from a ferromagnetic layer (10 nm of cobalt) we find that the spin to charge conversion is highly efficient. Analysis in the frame of the inverse Rashba-Edelstein (RE) effect yields a RE length in excess of 4 nm at room temperature. Furthermore, owing to the semiconducting nature of MoS$_{2}$, it is found that back-gating allows electrical field control of the spin-relaxation rate of the MoS$_{2}$-metallic stack.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Generation of coherent spin-wave modes in Yttrium Iron Garnet microdiscs by spin-orbit torque

Spin-orbit effects [1-4] have the potential of radically changing the field of spintronics by allowing transfer of spin angular momentum to a whole new class of materials. In a seminal letter to Nature [5], Kajiwara et al. showed that by depositing Platinum (Pt, a normal metal) on top of a 1.3 $μ$m thick Yttrium Iron Garnet (YIG, a magnetic insulator), one could effectively transfer spin angular momentum through the interface between these two different materials. The outstanding feature was the detection of auto-oscillation of the YIG when enough dc current was passed in the Pt. This finding has created a great excitement in the community for two reasons: first, one could control electronically the damping of insulators, which can offer improved properties compared to metals, and here YIG has the lowest damping known in nature; second, the damping compensation could be achieved on very large objects, a particularly relevant point for the field of magnonics [6,7] whose aim is to use spin-waves as carriers of information. However, the degree of coherence of the observed auto-oscillations has not been addressed in ref. [5]. In this work, we emphasize the key role of quasi-degenerate spin-wave modes, which increase the threshold current. This requires to reduce both the thickness and lateral size in order to reach full damping compensation [8] , and we show clear evidence of coherent spin-orbit torque induced auto-oscillation in micron-sized YIG discs of thickness 20 nm.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Resonant translational, breathing and twisting modes of pinned transverse magnetic domain walls

We study translational, breathing and twisting resonant modes of transverse magnetic domain walls pinned at notches in ferromagnetic nanostrips. We demonstrate that a mode's sensitivity to notches depends strongly on the characteristics of that particular resonance. For example, the frequencies of modes involving lateral motion of the wall are the ones which are most sensitive to changes in the notch intrusion depth (especially at the narrower, more strongly confined end of the domain wall). In contrast, the breathing mode, whose dynamics are concentrated away from the notches is relatively insensitive to changes in the notches' sizes. We also demonstrate a sharp drop in the translational mode's frequency towards zero when approaching depinning which is found, using a harmonic oscillator model, to be consistent with a reduction in the local slope of the notch-induced confining potential at its edge.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Graphene-Passivated Nickel as an Oxidation-Resistant Electrode for Spintronics

We report on graphene-passivated ferromagnetic electrodes (GPFE) for spin devices. GPFE are shown to act as spin-polarized oxidation-resistant electrodes. The direct coating of nickel with few layer graphene through a readily scalable chemical vapour deposition (CVD) process allows the preservation of an unoxidized nickel surface upon air exposure. Fabrication and measurement of complete reference tunneling spin valve structures demonstrates that the GPFE is maintained as a spin polarizer and also that the presence of the graphene coating leads to a specific sign reversal of the magneto-resistance. Hence, this work highlights a novel oxidation-resistant spin source which further unlocks low cost wet chemistry processes for spintronics devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Measurement of the intrinsic damping constant in individual nanodisks of YIG and YIG{\textbar}Pt

We report on an experimental study on the spin-waves relaxation rate in two series of nanodisks of diameter $ϕ=$300, 500 and 700~nm, patterned out of two systems: a 20~nm thick yttrium iron garnet (YIG) film grown by pulsed laser deposition either bare or covered by 13~nm of Pt. Using a magnetic resonance force microscope, we measure precisely the ferromagnetic resonance linewidth of each individual YIG and YIG{\textbar}Pt nanodisks. We find that the linewidth in the nanostructure is sensibly smaller than the one measured in the extended film. Analysis of the frequency dependence of the spectral linewidth indicates that the improvement is principally due to the suppression of the inhomogeneous part of the broadening due to geometrical confinement, suggesting that only the homogeneous broadening contributes to the linewidth of the nanostructure. For the bare YIG nano-disks, the broadening is associated to a damping constant $α= 4 \cdot 10^{-4}$. A 3 fold increase of the linewidth is observed for the series with Pt cap layer, attributed to the spin pumping effect. The measured enhancement allows to extract the spin mixing conductance found to be $G_{\uparrow \downarrow}= 1.55 \cdot 10^{14}~ Ω^{-1}\text{m}^{-2}$ for our YIG(20nm){\textbar}Pt interface, thus opening large opportunities for the design of YIG based nanostructures with optimized magnetic losses.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spintronics with graphene

Because of its fascinating electronic properties, graphene is expected to produce breakthroughs in many areas of nanoelectronics. For spintronics, its key advantage is the expected long spin lifetime, combined with its large electron velocity. In this article, we review recent theoretical and experimental results showing that graphene could be the long-awaited platform for spintronics. A critical parameter for both characterization and devices is the resistance of the contact between the electrodes and the graphene, which must be large enough to prevent quenching of the induced spin polarization but small enough to allow for the detection of this polarization. Spin diffusion lengths in the 100-μm range, much longer than those in conventional metals and semiconductors, have been observed. This could be a unique advantage for several concepts of spintronic devices, particularly for the implementation of complex architectures or logic circuits in which information is coded by pure spin currents.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Highly efficient spin transport in epitaxial graphene on SiC

Spin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of intense research, a suitable platform is still wanting. We report here on highly efficient spin transport in two-terminal polarizer/analyser devices based on high-mobility epitaxial graphene grown on silicon carbide. Taking advantage of high-impedance injecting/detecting tunnel junctions, we show spin transport efficiencies up to 75%, spin signals in the mega-ohm range and spin diffusion lengths exceeding 100 μm. This enables spintronics in complex structures: devices and network architectures relying on spin information processing, well beyond present spintronics applications, can now be foreseen.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Magnetic domain wall motion by spin transfer

The discovery that a spin polarized current can exert a large torque on a ferromagnet through a transfusion of spin angular momentum, offers a new way to control a magnetization by simple current injection, without the help of an applied external field. Spin transfer can be used to induce magnetization reversals and oscillations, or to control the position of a magnetic domain wall. In this review, we focus on this last mechanism, which is today the subject of an extensive research, both because the microscopic details for its origin are still debated, but also because promising applications are at stake for non-volatile magnetic memories.

0 citations0 reviewsNo code linkedOpen access