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Researcher profile

Dinh Loc Duong

Dinh Loc Duong contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-el

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Published work

4 published item(s)

preprint2022arXiv

Observation of strange metal in hole-doped valley-spin insulator

Temperature-linear resistance at low temperatures in strange metals is an exotic characteristic of strong correlation systems, as observed in high-TC superconducting cuprates, heavy fermions, Fe-based superconductors, ruthenates, and twisted bilayer graphene. Here, we introduce a hole-doped valley-spin insulator, V-doped WSe2, with hole pockets in the valence band. The strange metal characteristic was observed in VxW1-xSe2 at a critical carrier concentration of 9.5 x 10^20 cm-3 from 150 K to 1.8 K. The unsaturated magnetoresistance is almost linearly proportional to the magnetic field. Using the ansatz R(H,T) - R(0,0) ~ [(alpha.k.T)^2+(gamma.mu.B)^2]^1/2, the gamma/alpha ratio is estimated approximately to 4, distinct from that for the quasiparticles of LSCO, BaFe2(As1-xPx)2 (gamma/alpha=1) and bosons of YBCO (gamma/alpha=2). Our observation opens up the possible routes that induce strong correlation and superconductivity in two-dimensional materials with strong spin-orbit coupling.

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preprint2020arXiv

Gate modulation of the long-range magnetic order in a vanadium-doped WSe2 semiconductor

We demonstrate the gate-tunability of the long-range magnetic order in a p-type V-doped WSe2 monolayer using ab initio calculations. We found that at a low V-doping concentration limit, the long-range ferromagnetic order is enhanced by increasing the hole density. In contrast, the short-range antiferromagnetic order is manifested at a high electron density by full compensation of the p-type V doping concentration. The hole-mediated long-range magnetic exchange is ~70 meV, thus strongly suggesting the ferromagnetism in V-doped WSe2 at room temperature. Our findings on strong coupling between charge and spin order in V-doped WSe2 provide plenty of room for multifunctional gate-tunable spintronics.

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preprint2020arXiv

Light-controlled room temperature ferromagnetism in vanadium-doped tungsten diselenide semiconducting monolayers

Atomically thin transition metal dichalcogenide (TMD) semiconductors hold enormous potential for modern optoelectronic devices and quantum computing applications. By inducing long-range ferromagnetism (FM) in these semiconductors through the introduction of small amounts of a magnetic dopant, it is possible to extend their potential in emerging spintronic applications. Here, we demonstrate light-mediated, room temperature (RT) FM, in V-doped WS2 (V-WS2) monolayers. We probe this effect using the principle of magnetic LC resonance, which employs a soft ferromagnetic Co-based microwire coil driven near its resonance in the radio frequency (RF) regime. The combination of LC resonance with an extraordinary giant magneto-impedance effect, renders the coil highly sensitive to changes in the magnetic flux through its core. We then place the V-WS2 monolayer at the core of the coil where it is excited with a laser while its change in magnetic permeability is measured. Notably, the magnetic permeability of the monolayer is found to depend on the laser intensity, thus confirming light control of RT magnetism in this two-dimensional (2D) material. Guided by density functional calculations, we attribute this phenomenon to the presence of excess holes in the conduction and valence bands, as well as carriers trapped in the magnetic doping states, which in turn mediates the magnetization of the V-WS2 monolayer. These findings provide a unique route to exploit light-controlled ferromagnetism in low powered 2D spintronic devices capable of operating at RT.

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preprint2020arXiv

Room-temperature ferromagnetism in monolayer WSe2 semiconductor via vanadium dopant

Diluted magnetic semiconductors including Mn-doped GaAs are attractive for gate-controlled spintronics but Curie transition at room temperature with long-range ferromagnetic order is still debatable to date. Here, we report the room-temperature ferromagnetic domains with long-range order in semiconducting V-doped WSe2 monolayer synthesized by chemical vapor deposition. Ferromagnetic order is manifested using magnetic force microscopy up to 360K, while retaining high on/off current ratio of ~105 at 0.1% V-doping concentration. The V-substitution to W sites keep a V-V separation distance of 5 nm without V-V aggregation, scrutinized by high-resolution scanning transmission-electron microscopy, which implies the possibility of the Ruderman-Kittel-Kasuya-Yoshida interaction (or Zener model) by establishing the long-range ferromagnetic order in V-doped WSe2 monolayer through free hole carriers. More importantly, the ferromagnetic order is clearly modulated by applying a back gate. Our findings open new opportunities for using two-dimensional transition metal dichalcogenides for future spintronics.

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