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Gang Hee Han

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el physics.med-ph

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preprint2019arXiv

Quantum critical scaling for finite temperature Mott-like metal-insulator crossover in a few layered-MoS$_2$

The possibility of the strong electron-electron interaction driven insulating phase from the metallic phase in two-dimensions has been suggested for clean systems without intentional disorder, but its rigorous demonstration is still lacking. Here, we examine the finite-temperature transport behavior of a few layered-MoS$_2$ material in the vicinity of the density-driven metal-insulator transition (MIT), revealing previously overlooked universal features characteristic of strongly correlated electron systems. Our scaling analysis, based on the Wigner-Mott theoretical viewpoint, conclusively demonstrates that the transition is driven by strong electron-electron interactions and not disorder, in striking resemblance to what is seen in other Mott systems. Our results provide compelling evidence that transition-metal dichalcogenides provide an ideal testing ground for the study of strong correlation physics, which should open an exciting avenue for future research, making a parallel with recent advances in twisted bilayer graphene

preprint2016arXiv

Spin to charge conversion in MoS$_{2}$ monolayer with spin pumping

Layered transition-metal dichalcogenides (TMDs) family are gaining increasing importance due to their unique electronic band structures, promising interplay among light, valley (pseudospin), charge and spin degrees of freedom. They possess large intrinsic spin-orbit interaction which make them most relevant for the emerging field of spin-orbitronics. Here we report on the conversion of spin current to charge current in MoS2 monolayer. Using spin pumping from a ferromagnetic layer (10 nm of cobalt) we find that the spin to charge conversion is highly efficient. Analysis in the frame of the inverse Rashba-Edelstein (RE) effect yields a RE length in excess of 4 nm at room temperature. Furthermore, owing to the semiconducting nature of MoS$_{2}$, it is found that back-gating allows electrical field control of the spin-relaxation rate of the MoS$_{2}$-metallic stack.

preprint2015arXiv

Selective amplification of primary exciton in monolayer MoS2

Optoelectronics applications for transition-metal dichalcogenides are still limited by weak light absorption and their complex exciton modes are easily perturbed by varying excitation conditions, because they are inherent in atomically thin layers. Here, we propose a method of selectively amplifying the primary exciton (A0) among the exciton complexes in monolayer MoS2 via cyclic re-excitation of cavity-free exciton-coupled plasmon propagation. This was implemented by partially overlapping a Ag nanowire (NW) on a MoS2 monolayer separated by a thin SiO2 spacer. Exciton-coupled plasmons in the NW enhance the A0 radiation in MoS2. The cumulative amplification of emission enhancement by cyclic plasmon travelling reaches ~20-fold selectively for the A0, while excluding other B exciton and multiexciton by significantly reduced band-filling, without oscillatory spectra implying plasmonic cavity effects.

preprint2014arXiv

Scalable Production of Highly-Sensitive Nanosensors Based on Graphene Functionalized with a Designed G Protein-Coupled Receptor

We have developed a novel, all-electronic biosensor for opioids that consists of an engineered mu opioid receptor protein, with high binding affinity for opioids, chemically bonded to a graphene field-effect transistor to read out ligand binding. A variant of the receptor protein that provided chemical recognition was computationally redesigned to enhance its solubility and stability in an aqueous environment. A shadow mask process was developed to fabricate arrays of hundreds of graphene transistors with average mobility of ~1500 cm2 V-1 s-1 and yield exceeding 98%. The biosensor exhibits high sensitivity and selectivity for the target naltrexone, an opioid receptor antagonist, with a detection limit of 10 pg/mL.