Source author record

Yoram Dagan

Yoram Dagan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.supr-con cond-mat.str-el cond-mat.mes-hall

Catalog footprint

What is connected

6works

3topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2022arXiv

Tunable Magnetic Scattering and Ferroelectric Switching at the LaAlO$_3$/EuTiO$_3$/Sr$_{0.99}$Ca$_{0.01}$TiO$_3$ Interface

Ferroelectric and ferromagnetic orders rarely coexist, and magnetoelectric coupling is even more scarce. A possible avenue for combining these orders is by interface design, where orders formed at the constituent materials can overlap and interact. Using a combination of magneto-transport and scanning SQUID measurements, we explore the interactions between ferroelectricity, magnetism, and the 2D electron system (2DES) formed at the novel LaAlO$_3$/EuTiO$_3$/Sr$_{0.99}$Ca$_{0.01}$TiO$_3$ heterostructure. We find that the electrons at the interface experience magnetic scattering appearing along with a diverging Curie-Weiss-type behaviour in the EuTiO$_3$ layer. The 2DES is also affected by the switchable ferroelectric polarization at the Sr$_{0.99}$Ca$_{0.01}$TiO$_3$ bulk. While the 2DES interacts with both magnetism and ferroelectricity, we show that the presence of the conducting electrons has no effect on magnetization in the EuTiO$_3$ layer. Our results provide a first step towards realizing a new multiferroic system where magnetism and ferroelectricity can interact via an intermediate conducting layer.

preprint2020arXiv

Ferroelectric Exchange Bias Affects Interfacial Electronic States

In polar oxide interfaces phenomena such as conductivity, superconductivity, magnetism, one-dimensional conductivity and Quantum Hall states can emerge at the polar discontinuity. Combining controllable ferroelectricity at such interfaces can affect the superconducting properties and shed light on the mutual effects between the polar oxide and the ferroelectric oxide. Here we study the interface between the polar oxide LaAlO3 and the ferroelectric Ca-doped SrTiO3 by means of electrical transport combined with local imaging of the current flow with the use of scanning Superconducting Quantum Interference Device (SQUID). Anomalous behavior of the interface resistivity is observed at low temperatures. The scanning SQUID maps of the current flow suggest that this behavior originates from an intrinsic bias induced by the polar LaAlO3 layer. Our data imply that the intrinsic bias combined with ferroelectricity constrain the possible structural domain tiling near the interface. We recommend the use of this intrinsic bias as a method of controlling and tuning the initial state of ferroelectric materials by design of the polar structure. The hysteretic dependence of the normal and the superconducting state properties on gate voltage can be utilized in multifaceted controllable memory devices.

preprint2016arXiv

Fermi Surface Reconstruction in the Electron-doped Cuprate Pr(2-x)CexCuO4

We report extensive resistivity, Hall, and magnetoresistance measurements on thin films of the electron-doped cuprate \PCCO~(PCCO), as a function of doping, temperature and magnetic field. The doping dependence of the resistivity and Hall number at low temperatures are characteristic of a system near a quantum phase transition or a Fermi Surface Reconstruction (FSR) point. The spin magnetoresistance drops to zero near the critical point. The data presented in this paper were compiled during the 2004-2007 period but were never published in this comprehensive form. Because of the recent interest in very similar results now being found in the normal state of hole-doped cuprates, we believe the results of our older, mostly unpublished, work will be of interest to the present community of cuprate researchers. In particular, Fig.11 shows the large change in Hall number at the FSR point in \PCCO, similar to that found recently in YBCO and LSCO (See ref[1] and [2]). Also, Fig.6 illustrates how the resistivity upturn is affected by the FSR. The cause of the resistivity upturn has been attributed to the loss of carriers at doping below the FSR in the hole-doped cuprates (see Ref. 3), however, this scenario does not explain the data for PCCO. The upturn in n-doped cuprates is more-likely due to a combination of carrier decrease and a change in the scattering rate below the FSR (see also Ref. 4). The change in spin scattering below the FSR is illustrated by Fig.18 in this paper. Chen et al. [5] have developed a model based on spin scattering that is able to explain qualitatively the resistivity upturn in all the cuprates.

preprint2014arXiv

Onset of Nernst Effect Beyond the Coherence Critical Field of a Nano-Scale Granular Superconductor

We report measurements of the Nernst effect and of the magneto-resistance of granular aluminum films near the metal to insulator transition. These films show sharp transitions as a function of temperature and magnetic field. At low temperatures the Nernst signal displays a sharp peak at a field where more than 90% of the normal state resistance has been restored, suggesting a transition involving entropy transport after superconducting coherence has been destroyed. At temperatures higher than the critical temperature the fluctuation paraconductivity scales with the Nernst signal, in agreement with a description in terms of fluctuations of the order parameter.

preprint2013arXiv

Anomalous response to gate voltage application in mesoscopic LaAlO_3/SrTiO_3 devices

We report on resistivity and Hall measurements performed on a series of narrow mesa devices fabricated from LaAlO_3/SrTiO_3 single interface heterostructure with a bridge width range of 1.5-10 microns. Upon applying back-gate voltage of the order of a few Volts, a strong increase in the sample resistance (up to factor of 35) is observed, suggesting a relatively large capacitance between the Hall-bar and the gate. The high value of this capacitance is due to the device geometry, and can be explained within an electrostatic model using the Thomas Fermi approximation. The Hall coefficient is sometimes a non-monotonic function of the gate voltage. This behavior is inconsistent with a single conduction band model. We show that a theoretical two-band model is consistent with this transport behavior, and indicates a metal to insulator transition in at least one of these bands.

preprint2011arXiv

Evolution of a bosonic mode across the superconducting dome in the high-Tc cuprate Pr(2-x)Ce(x)CuO(4-δ)

We report a detailed spectroscopic study of the electron doped cuprate superconductor Pr(2-x)Ce(x)CuO(4-δ) using point contact junctions for x=0.125(underdoped), x=0.15(optimally doped) and x=0.17(overdoped). From our conductance measurements we are able to identify bosonic resonances for each doping. These excitations disappear above the critical temperature, and above the critical magnetic field. We find that the energy of the bosonic excitations decreases with doping, which excludes lattice vibrations as the paring glue. We conclude that the bosonic mediator for these cuprates is more likely to be spin excitations.