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Alexander Palevski

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Published work

8 published item(s)

preprint2021arXiv

Superconductor-insulator transitions in three-dimensional indium-oxide at high pressures

Experiments investigating magnetic-field-tuned superconductor-insulator transition (HSIT) mostly focus on two-dimensional material systems where the transition and its proximate ground-state phases, often exhibit features that are seemingly at odds with the expected behavior. Here we present a complementary study of a three-dimensional pressure-packed amorphous indium-oxide (InOx) powder where granularity controls the HSIT. Above a low threshold pressure of ~0.2 GPa, vestiges of superconductivity are detected, although neither a true superconducting transition nor insulating behavior are observed. Instead, a saturation at very high resistivity at low pressure is followed by saturation at very low resistivity at higher pressure. We identify both as different manifestations of anomalous metallic phases dominated by superconducting fluctuations. By analogy with previous identification of the low resistance saturation as a "failed superconductor", our data suggests that the very high resistance saturation is a manifestation of a "failed insulator". Above a threshold pressure of ~6 GPa, the sample becomes fully packed, and superconductivity is robust, with TC tunable with pressure. A quantum critical point at PC~25 GPa marks the complete suppression of superconductivity. For a finite pressure below PC, a magnetic field is shown to induce a HSIT from a true zero-resistance superconducting state to a weakly insulating behavior. Determining the critical field, HC, we show that similar to the 2D behavior, the insulating-like state maintains a superconducting character, which is quenched at higher field, above which the magnetoresistance decreases to its fermionic normal state value.

preprint2020arXiv

Superconductor-Insulator Transition and the Crossover to Non Equilibrium in two-dimensional Indium - Indium-Oxide composite

Magnetic-field tuned superconductor to insulator transition was observed in a novel hybrid system of granular superconducting indium, deposited on indium oxide thin film, which exhibits global superconductivity at low magnetic fields. We have used annealing to tune the coupling to lie just at the borderline where superconductivity in the underlying InOx is suppressed, which is also close to the metal-insulator transition of the InOx. The hybrid system exhibits a "giant" magnetoresistance above the H-SIT, with critical behavior that manifests the duality between Cooper pairs and vortices.

preprint2014arXiv

Weak Localization Effects as Evidence for Bulk Quantization in Thin Films Bi2Se3

Strong spin-orbit coupling in topological insulators results in the ubiquitously observed weak antilocalization feature in their magnetoresistance. Here we present magnetoresistance measurements in ultra thin films of the topological insulator Bi_2Se_3, and show that in the 2D quantum limit, in which the topological insulator bulk becomes quantized, an additional negative magnetoresistance feature appears. Detailed analysis associates this feature with weak localization of the quantized bulk channels, providing thus evidence for this quantization. Examination of the dephasing fields at different temperatures indicates different scattering mechanism in the bulk vs the surface states.

preprint2013arXiv

Anomalous response to gate voltage application in mesoscopic LaAlO_3/SrTiO_3 devices

We report on resistivity and Hall measurements performed on a series of narrow mesa devices fabricated from LaAlO_3/SrTiO_3 single interface heterostructure with a bridge width range of 1.5-10 microns. Upon applying back-gate voltage of the order of a few Volts, a strong increase in the sample resistance (up to factor of 35) is observed, suggesting a relatively large capacitance between the Hall-bar and the gate. The high value of this capacitance is due to the device geometry, and can be explained within an electrostatic model using the Thomas Fermi approximation. The Hall coefficient is sometimes a non-monotonic function of the gate voltage. This behavior is inconsistent with a single conduction band model. We show that a theoretical two-band model is consistent with this transport behavior, and indicates a metal to insulator transition in at least one of these bands.

preprint2013arXiv

Emerging Weak Localization Effects on Topological Insulator-Insulating Ferromagnet (Bi_2Se_3-EuS) Interface

Thin films of topological insulator Bi_2Se_3 were deposited directly on insulating ferromagnetic EuS. Unusual negative magnetoresistance was observed near the zero field below the Curie temperature (T_C), resembling the weak localization effect; whereas the usual positive magnetoresistance was recovered above T_C. Such negative magnetoresistance was only observed for Bi_2Se_3 layers thinner than t~4nm, when its top and bottom surfaces are coupled. These results provide evidence for a proximity effect between a topological insulator and an insulating ferromagnet, laying the foundation for future realization of the half-integer quantized anomalous Hall effect in three-dimensional topological insulators.

preprint2012arXiv

High Quality Ultrathin Bi2Se3 Films on CaF2 and CaF2/Si by Molecular Beam Epitaxy with a Radio Frequency Cracker Cell

Here we report a method to fabricate high quality Bi2Se3 thin films using molecular beam epitaxy with a radio frequency cracker cell as an atomic selenium source. With rates close to exact stoichiometry, optimal layer-by-layer growth of high quality Bi2Se3 thin films with smooth surfaces, has been achieved on CaF2(111) substrates and Si(111) substrates with a thin CaF2 buffer layer(CaF2/Si). Transport measurements show a characteristic weak antilocalization mangnetoresistance, with emergence of weak localization in the ultrathin film limit. Quantum Oscillations attributed to the topological surface states have been observed, including in films on CaF2/Si.

preprint2012arXiv

Weak antilocalization and disorder-enhanced electron interactions in crystalline GeSbTe

Phase change materials can be reversibly switched between amorphous and crystalline states and often show strong contrast in the optical and electrical properties of these two phases. They are now in widespread use for optical data storage, and their fast switching and a pronounced change of resistivity upon crystallization are also very attractive for nonvolatile electronic data storage. Nevertheless there are still several open questions regarding the electronic states and charge transport in these compounds. In this work we study electrical transport in thin metallic films of the disordered, crystalline phase change material Ge$_1$Sb$_2$Te$_4$. We observe weak antilocalization and disorder enhanced Coulomb interaction effects at low temperatures, and separate the contributions of these two phenomena to the temperature dependence of the resistivity, Hall effect, and magnetoresistance. Strong spin-orbit scattering causes positive magnetoresistance at all temperatures, and a careful analysis of the low-field magnetoresistance allows us to extract the temperature dependent electron dephasing rate and study other scattering phenomena. We find electron dephasing due to inelastic electron-phonon scattering at higher temperatures, electron-electron scattering dephasing at intermediate temperatures, and a crossover to weak temperature dependence below 1 K.

preprint2009arXiv

Polar Kerr Effect as Probe for Time-Reversal Symmetry Breaking in Unconventional Superconductors

The search for broken time reversal symmetry (TRSB) in unconventional superconductors intensified in the past year as more systems have been predicted to possess such a state. Following our pioneering study of TRSB states in Sr$_2$RuO$_4$ using magneto-optic probes, we embarked on a systematic study of several other of these candidate systems. The primary instrument for our studies is the Sagnac magneto-optic interferometer, which we recently developed. This instrument can measure magneto-optic Faraday or Kerr effects with an unprecedented sensitivity of 10 nanoradians at temperatures as low as 100 mK. In this paper we review our recent studies of TRSB in several systems, emphasizing the study of the pseudogap state of high temperature superconductors and the inverse proximity effect in superconductor/ferromagnet proximity structures.