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Researcher profile

Beena Kalisky

Beena Kalisky contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.str-elcond-mat.supr-concond-mat.mtrl-scicond-mat.mes-hallquant-ph

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Published work

6 published item(s)

preprint2022arXiv

Current Mapping of Amorphous LaAlO3/SrTiO3 near the Metal-Insulator Transition

The two-dimensional electron system found between LaAlO3 and SrTiO3 hosts a variety of physical phenomena that can be tuned through external stimuli. This allows for electronic devices controlling magnetism, spin-orbit coupling, and superconductivity. Controlling the electron density by varying donor concentrations and using electrostatic gating are convenient handles to modify the electronic properties, but the impact on the microscopic scale, particularly of the former, remains underexplored. Here, we image the current distribution at 4.2 K in amorphous-LaAlO3/SrTiO3 using scanning superconducting-quantum-interference-device microscopy while changing the carrier density in situ using electrostatic gating and oxygen annealing. We show how potential disorder affects the current and how homogeneous 2D flow evolves into several parallel conducting channels when approaching the metal-to-insulator transition. We link this to ferroelastic domains and oxygen vacancies. This has important consequences for micro- and nanoscale devices with low carrier density and fundamental studies on quantum effects in oxides.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Magnetic memory and spontaneous vortices in a van der Waals superconductor

Doped Mott insulators exhibit some of the most intriguing quantum phases of matter, including quantum spin-liquids, unconventional superconductors, and non-Fermi liquid metals. Such phases often arise when itinerant electrons are close to a Mott insulating state, and thus experience strong spatial correlations. Proximity between different layers of van der Waals heterostructures naturally realizes a platform for experimentally studying the relationship between localized, correlated electrons and itinerant electrons. Here, we explore this relationship by studying the magnetic landscape of 4Hb-TaS2, which realizes an alternate stack of a candidate spin liquid and a superconductor. We report on a spontaneous vortex phase whose vortex density can be trained in the normal state. We show that time reversal symmetry is broken above Tc, indicating the presence of a magnetic phase independent of the superconductor. Strikingly, this phase does not generate detectable magnetic signals. We use scanning superconducting quantum interference device (SQUID) microscopy to show that it is incompatible with ferromagnetic ordering. The discovery of this new form of hidden magnetism illustrates how combining superconductivity with a strongly correlated system can lead to new, unexpected physics.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Tunable Magnetic Scattering and Ferroelectric Switching at the LaAlO$_3$/EuTiO$_3$/Sr$_{0.99}$Ca$_{0.01}$TiO$_3$ Interface

Ferroelectric and ferromagnetic orders rarely coexist, and magnetoelectric coupling is even more scarce. A possible avenue for combining these orders is by interface design, where orders formed at the constituent materials can overlap and interact. Using a combination of magneto-transport and scanning SQUID measurements, we explore the interactions between ferroelectricity, magnetism, and the 2D electron system (2DES) formed at the novel LaAlO$_3$/EuTiO$_3$/Sr$_{0.99}$Ca$_{0.01}$TiO$_3$ heterostructure. We find that the electrons at the interface experience magnetic scattering appearing along with a diverging Curie-Weiss-type behaviour in the EuTiO$_3$ layer. The 2DES is also affected by the switchable ferroelectric polarization at the Sr$_{0.99}$Ca$_{0.01}$TiO$_3$ bulk. While the 2DES interacts with both magnetism and ferroelectricity, we show that the presence of the conducting electrons has no effect on magnetization in the EuTiO$_3$ layer. Our results provide a first step towards realizing a new multiferroic system where magnetism and ferroelectricity can interact via an intermediate conducting layer.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A femto-Tesla DC SQUID design for quantum-ready readouts

Among some of the current uses of the DC Superconducting QUantum Interference Devices (SQUIDs) are qubit-readouts and sensors for probing properties of quantum materials. We present a rather unique gradiometric niobium SQUID design with state-of-the-art sensitivity in the femto-Tesla range which can be easily tuned to specific readout requirements. The sensor is a next generation of the fractional SQUIDs with tightly optimized input coil and a combination of all measures known for restraining parasitic resonances and other detrimental effects. Our design combines the practical usefulness of well-defined pickup loops for superior imaging kernel and tunable-probing applications with the fractionalization approach to reduce undesired inductances. In addition, our modeling predicts small dimensions for these planar sensors. These features make them of high relevance for material studies and for detection of magnetic fields in small volumes, e.g. as part of a cryogenic scanning quantum imaging apparatus for efficient diagnostics and quantum device readouts. This manuscript will benefit scientists and engineers working on quantum computing technologies by clarifying potential general misconceptions about DC SQUID optimization alongside the introduction of the novel flexible compact DC SQUID design.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electrostatic modulation of the lateral carrier density profile in field effect devices with non-linear dielectrics

We study the effects of electrostatic gating on the lateral distribution of charge carriers in two dimensional devices, in a non-linear dielectric environment. We compute the charge distribution using the Thomas-Fermi approximation to model the electrostatics of the system. The electric field lines generated by the gate are focused at the edges of the device, causing an increased depletion near the edges, compared to the center of the device. This effect strongly depends on the dimensions of the device, and the non-linear dielectric constant of the substrate. We experimentally demonstrate this effect using scanning superconducting interference device (SQUID) microscopy images of current distributions in gated LaAlO$_3$/SrTiO$_3$ heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Ferroelectric Exchange Bias Affects Interfacial Electronic States

In polar oxide interfaces phenomena such as conductivity, superconductivity, magnetism, one-dimensional conductivity and Quantum Hall states can emerge at the polar discontinuity. Combining controllable ferroelectricity at such interfaces can affect the superconducting properties and shed light on the mutual effects between the polar oxide and the ferroelectric oxide. Here we study the interface between the polar oxide LaAlO3 and the ferroelectric Ca-doped SrTiO3 by means of electrical transport combined with local imaging of the current flow with the use of scanning Superconducting Quantum Interference Device (SQUID). Anomalous behavior of the interface resistivity is observed at low temperatures. The scanning SQUID maps of the current flow suggest that this behavior originates from an intrinsic bias induced by the polar LaAlO3 layer. Our data imply that the intrinsic bias combined with ferroelectricity constrain the possible structural domain tiling near the interface. We recommend the use of this intrinsic bias as a method of controlling and tuning the initial state of ferroelectric materials by design of the polar structure. The hysteretic dependence of the normal and the superconducting state properties on gate voltage can be utilized in multifaceted controllable memory devices.

0 citations0 reviewsNo code linkedOpen access