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Gal Tuvia

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2 publications

preprint2022arXiv

Tunable Magnetic Scattering and Ferroelectric Switching at the LaAlO3_3/EuTiO3_3/Sr0.99_{0.99}Ca0.01_{0.01}TiO3_3 Interface

Ferroelectric and ferromagnetic orders rarely coexist, and magnetoelectric coupling is even more scarce. A possible avenue for combining these orders is by interface design, where orders formed at the constituent materials can overlap and interact. Using a combination of magneto-transport and scanning SQUID measurements, we explore the interactions between ferroelectricity, magnetism, and the 2D electron system (2DES) formed at the novel LaAlO3_3/EuTiO3_3/Sr0.99_{0.99}Ca0.01_{0.01}TiO3_3 heterostructure. We find that the electrons at the interface experience magnetic scattering appearing along with a diverging Curie-Weiss-type behaviour in the EuTiO3_3 layer. The 2DES is also affected by the switchable ferroelectric polarization at the Sr0.99_{0.99}Ca0.01_{0.01}TiO3_3 bulk. While the 2DES interacts with both magnetism and ferroelectricity, we show that the presence of the conducting electrons has no effect on magnetization in the EuTiO3_3 layer. Our results provide a first step towards realizing a new multiferroic system where magnetism and ferroelectricity can interact via an intermediate conducting layer.

preprint2020arXiv

Ferroelectric Exchange Bias Affects Interfacial Electronic States

In polar oxide interfaces phenomena such as conductivity, superconductivity, magnetism, one-dimensional conductivity and Quantum Hall states can emerge at the polar discontinuity. Combining controllable ferroelectricity at such interfaces can affect the superconducting properties and shed light on the mutual effects between the polar oxide and the ferroelectric oxide. Here we study the interface between the polar oxide LaAlO3 and the ferroelectric Ca-doped SrTiO3 by means of electrical transport combined with local imaging of the current flow with the use of scanning Superconducting Quantum Interference Device (SQUID). Anomalous behavior of the interface resistivity is observed at low temperatures. The scanning SQUID maps of the current flow suggest that this behavior originates from an intrinsic bias induced by the polar LaAlO3 layer. Our data imply that the intrinsic bias combined with ferroelectricity constrain the possible structural domain tiling near the interface. We recommend the use of this intrinsic bias as a method of controlling and tuning the initial state of ferroelectric materials by design of the polar structure. The hysteretic dependence of the normal and the superconducting state properties on gate voltage can be utilized in multifaceted controllable memory devices.

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