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Yongqing Li

Yongqing Li appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciComputer Visioncond-mat.othercond-mat.str-elcond-mat.supr-coneess.IVhep-thquant-ph

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Published work

16 published item(s)

preprint2026arXiv

Real-Time Reconstruction of 3D Bone Models via Very-Low-Dose Protocols

Patient-specific bone models are essential for designing surgical guides and preoperative planning, as they enable the visualization of intricate anatomical structures. However, traditional CT-based approaches for creating bone models are limited to preoperative use due to the low flexibility and high radiation exposure of CT and time-consuming manual delineation. Here, we introduce Semi-Supervised Reconstruction with Knowledge Distillation (SSR-KD), a fast and accurate AI framework to reconstruct high-quality bone models from biplanar X-rays in 30 seconds, with an average error under 1.0 mm, eliminating the dependence on CT and manual work. Additionally, high tibial osteotomy simulation was performed by experts on reconstructed bone models, demonstrating that bone models reconstructed from biplanar X-rays have comparable clinical applicability to those annotated from CT. Overall, our approach accelerates the process, reduces radiation exposure, enables intraoperative guidance, and significantly improves the practicality of bone models, offering transformative applications in orthopedics.

0 citations0 reviewsNo code linkedOpen access
preprint2024arXiv

Local distortion driven magnetic phase switching in pyrochlore $Yb_2(Ti_{1-x}Sn_x)_2O_7$

While it is commonly accepted that the disorder induced by magnetic ion doping in quantum magnets usually generates a rugged free-energy landscape resulting in slow or glassy spin dynamics, the disorder/distortion effects associated with non-magnetic ion sites doping are still illusive. Here, using AC susceptibility measurements, we show that the mixture of Sn/Ti on the non-magnetic ion sites of pyrochlore $Yb_2(Ti_{1-x}Sn_x)_2O_7$ induces an antiferromagnetic ground state despite both parent compounds, $Yb_2Ti_2O_7$, and $Yb_2Sn_2O_7$, order ferromagnetically. Local structure studies through neutron total scattering reveals the local distortion in the non-magnetic ion sites and its strong correlation with the magnetic phase switching. Our study, for the first time, demonstrates the local distortion as induced by the non-magnetic ion site mixture could be a new path to achieve magnetic phase switching, which has been traditionally obtained by external stimuli such as temperature, magnetic field, pressure, strain, light, etc.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Anomalous Hall Effect in Layered Ferrimagnet MnSb2Te4

We report on low-temperature electron transport properties of MnSb2Te4, a candidate of ferrimagnetic Weyl semimetal. Long -range magnetic order is manifested as a nearly square-shaped hysteresis loop in the anomalous Hall resistance, as well as sharp jumps in the magnetoresistance. At temperatures below 4 K, a lnT-type upturn appears in the temperature dependence of longitudinal resistance, which can be attributed to the electron-electron interaction (EEI), since the weak localization can be excluded by the temperature dependence of magnetoresistance. Although the anomalous Hall resistance exhibits a similar lnT-type upturn in the same temperature range, such correction is absent in the anomalous Hall conductivity. Our work demonstrates that MnSb2Te4 microflakes provide an ideal system to test the theory of EEI correction to the anomalous Hall effect.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

Hybrid semiconductor-superconductor InAs-Al nanowires with uniform and defect-free crystal interfaces are one of the most promising candidates used in the quest for Majorana zero modes (MZMs). However, InAs nanowires often exhibit a high density of randomly distributed twin defects and stacking faults, which result in an uncontrolled and non-uniform InAs-Al interface. Furthermore, this type of disorder can create potential inhomogeneity in the wire, destroy the topological gap, and form trivial sub-gap states mimicking MZM in transport experiments. Further study shows that reducing the InAs nanowire diameter from growth can significantly suppress the formation of these defects and stacking faults. Here, we demonstrate the in situ growth of ultra-thin InAs nanowires with epitaxial Al film by molecular-beam epitaxy. Our InAs diameter (~ 30 nm) is only one-third of the diameters (~ 100 nm) commonly used in literatures. The ultra-thin InAs nanowires are pure phase crystals for various different growth directions, suggesting a low level of disorder. Transmission electron microscopy confirms an atomically sharp and uniform interface between the Al shell and the InAs wire. Quantum transport study on these devices resolves a hard induced superconducting gap and $2e^-$ periodic Coulomb blockade at zero magnetic field, a necessary step for future MZM experiments. A large zero bias conductance peak with a peak height reaching 80% of $2e^2/h$ is observed.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Robust Gapless Surface State against Surface Magnetic Impurities on (Bi$_{0.5}$Sb$_{0.5}$)$_2$Te$_3$ Evidenced by In Situ Magnetotransport Measurements

Despite extensive experimental and theoretical efforts, the important issue of the effects of surface magnetic impurities on the topological surface state of a topological insulator (TI) remains unresolved. We elucidate the effects of Cr impurities on epitaxial thin films of (Bi$_{0.5}$Sb$_{0.5}$)$_{2}$Te$_{3}$: Cr adatoms are incrementally deposited onto the TI held in ultrahigh vacuum at low temperatures, and \textit{in situ} magnetoconductivity and Hall effect measurements are performed at each increment with electrostatic gating. In the experimentally identified surface transport regime, the measured minimum electron density shows a non-monotonic evolution with the Cr density ($n_{\mathrm{Cr}}$): it first increases and then decreases with $n_{\mathrm{Cr}}$. This unusual behavior is ascribed to the dual roles of the Cr as ionized impurities and electron donors, having competing effects of enhancing and decreasing the electronic inhomogeneities in the surface state at low and high $n_{\mathrm{Cr}}$ respectively. The magnetoconductivity is obtained for different $n_{\mathrm{Cr}}$ on one and the same sample, which yields clear evidence that the weak antilocalization effect persists and the surface state remains gapless up to the highest $n_{\mathrm{Cr}}$, contrary to the expectation that the deposited Cr should break the time reversal symmetry and induce a gap opening at the Dirac point.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Transport in two-dimensional topological materials: recent developments in experiment and theory

We review theoretical and experimental highlights in transport in two-dimensional materials focussing on key developments over the last five years. Topological insulators are finding applications in magnetic devices, while Hall transport in doped samples and the general issue of topological protection remain controversial. In transition metal dichalcogenides valley-dependent electrical and optical phenomena continue to stimulate state-of-the-art experiments. In Weyl semimetals the properties of Fermi arcs are being actively investigated. A new field, expected to grow in the near future, focuses on the non-linear electrical and optical responses of topological materials, where fundamental questions are once more being asked about the intertwining roles of the Berry curvature and disorder scattering. In topological superconductors the quest for chiral superconductivity, Majorana fermions and topological quantum computing is continuing apace.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Giant semiclassical magnetoresistance in high mobility TaAs2 semimetal

We report the observation of colossal positive magnetoresistance (MR) in single crystalline, high mobility TaAs2 semimetal. The excellent fit of MR by a single quadratic function of the magnetic field B over a wide temperature range (T = 2-300 K) suggests the semiclassical nature of the MR. The measurements of Hall effect and Shubnikov-de Haas oscillations, as well as band structure calculations suggest that the giant MR originates from the nearly perfectly compensated electrons and holes in TaAs2. The quadratic MR can even exceed 1,200,000% at B = 9 T and T = 2 K, which is one of the largest values among those of all known semi-metallic compounds including the very recently discovered WTe2 and NbSb2. The giant positive magnetoresistance in TaAs2, which not only has a fundamentally different origin from the negative colossal MR observed in magnetic systems, but also provides a nice complemental system that will be beneficial for applications in magnetoelectronic devices

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Spin correlations and colossal magnetoresistance in HgCr$_2$Se$_4$

This study aims to unravel the mechanism of colossal magnetoresistance (CMR) observed in n-type HgCr$_2$Se$_4$, in which low-density conduction electrons are exchange-coupled to a three-dimensional Heisenberg ferromagnet with a Curie temperature $T_C\approx$ 105 K. Near room temperature the electron transport exhibits an ordinary semiconducting behavior. As temperature drops below $T^*\simeq2.1T_C$, the magnetic susceptibility deviates from the Curie-Weiss law, and concomitantly the transport enters an intermediate regime exhibiting a pronounced CMR effect before a transition to metallic conduction occurs at $T<T_C$. Our results suggest an important role of spin correlations not only near the critical point, but also for a wide range of temperatures ($T_C<T<T^*$) in the paramagnetic phase. In this intermediate temperature regime the transport undergoes a percolation type of transition from isolated magnetic polarons to a continuous network when temperature is lowered or magnetic field becomes stronger.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Chemical Potential Fluctuations in Topological Insulator (Bi$_{0.5}$Sb$_{0.5}$)$_2$Te$_3$ Films Visualized by Photocurrent Spectroscopy

We investigate the photocurrent properties of the topological insulator (Bi$_{0.5}$Sb$_{0.5}$)$_2$Te$_3$ on SrTiO$_3$-substrates. We find reproducible, submicron photocurrent patterns generated by long-range chemical potential fluctuations, occurring predominantly at the topological insulator/substrate interface. We fabricate nano-plowed constrictions which comprise single potential fluctuations. Hereby, we can quantify the magnitude of the disorder potential to be in the meV range. The results further suggest a dominating photo-thermoelectric current generated in the surface states in such nanoscale constrictions.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Disorder Enhanced Nuclear Spin Relaxation at Landau Level Filling Factor One

The nuclear spin relaxation rate (1/$T_1$) is measured for GaAs two-dimensional electron systems in the quantum Hall regime with an all-electrical technique for agitating and probing the nuclear spins. A "tilted plateau" feature is observed near the Landau level filling factor $ν=1$ in 1/$T_1$ versus $ν$. Both width and magnitude of the plateau increase with decreasing electron density. At low temperatures, 1/$T_1$ exhibits an Arrhenius temperature dependence within the tilted plateau regime. The extracted energy gaps are up to two orders of magnitude smaller than the corresponding charge transport gaps. These results point to a nontrivial mechanism for the disorder enhanced nuclear spin relaxation, in which microscopic inhomogeneities play a key role for the low energy spin excitations related to skyrmions.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Evidence for Half-Metallicity in n-type HgCr2Se4

High quality HgCr$_2$Se$_4$ single crystals have been investigated by magnetization, electron transport and Andreev reflection spectroscopy. In the ferromagnetic ground state, the saturation magnetic moment of each unit cell corresponds to an integer number of electron spins (3 $μ_B$/Cr$^{3+}$), and the Hall effect measurements suggest n-type charge carriers. Spin polarizations as high as $97\%$ were obtained from fits of the differential conductance spectra of HgCr$_2$Se$_4$/Pb junctions with the modified Blonder-Tinkham-Klapwijk (BTK) theory. The temperature and bias-voltage dependencies of the sub-gap conductance are consistent with recent theoretical calculations based on spin active scatterings at a superconductor/half metal interface. Our results suggest that n-HgCr$_2$Se$_4$ is a half metal, in agreement with theoretical calculations that also predict undoped HgCr$_2$Se$_4$ is a magnetic Weyl semimetal.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Observation of Anderson localization in ultrathin films of three-dimensional topological insulators

Anderson localization, the absence of diffusive transport in disordered systems, has been manifested as hopping transport in numerous electronic systems, whereas in recently discovered topological insulators it has not been directly observed. Here we report experimental demonstration of transition from diffusive transport in the weak antilocalization regime to variable range hopping transport in the Anderson localization regime with ultrathin (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ films. As disorder becomes stronger, negative magnetoconductivity due to the weak antilocalization is gradually suppressed, and eventually positive magnetoconductivity emerges when the electron system becomes strongly localized. This works reveals the critical role of disorder in the quantum transport properties of ultrathin topological insulator films, in which theories have predicted rich physics related to topological phase transitions.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Proximity effect between a topological insulator and a magnetic insulator with large perpendicular anisotropy

We report that thin films of a prototype topological insulator, Bi$_{2}$Se$_{3}$, can be epitaxially grown onto the (0001) surface of BaFe$_{12}$O$_{19}$(BaM), a magnetic insulator with high Curie temperature and large perpendicular anisotropy. In the Bi$_2$Se$_3$ thin films grown on non-magnetic substrates, classic weak antilocalization (WAL) is manifested as cusp-shaped positive magnetoresistance (MR) in perpendicular magnetic fields and parabola-shaped positive MR in parallel fields, whereas in Bi$_{2}$Se$_{3}$/BaM heterostructures the low field MR is parabola-shaped, which is positive in perpendicular fields and negative in parallel fields. The magnetic field and temperature dependence of the MR is explained as a consequence of the suppression of WAL due to strong magnetic interactions at the Bi$_{2}$Se$_{3}$/BaM interface.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Quantized one-dimensional edge channels with strong spin-orbit coupling in 3D topological insulators

A strong coupling between the electron spin and its motion is one of the prerequisites of spin-based data storage and electronics. A major obstacle is to find spin-orbit coupled materials where the electron spin can be probed and manipulated on macroscopic length scales, for instance across the gate channel of a spin-transistor. Here, we report on millimeter-scale edge channels with a conductance quantized at a single quantum 1 $\times$ $e^2/h$ at zero magnetic field. The quantum transport is found at the lateral edges of three-dimensional topological insulators made of bismuth chalcogenides. The data are explained by a lateral, one-dimensional quantum confinement of non-topological surface states with a strong Rashba spin-orbit coupling. This edge transport can be switched on and off by an electrostatic field-effect. Our results are fundamentally different from an edge transport in quantum spin Hall insulators and quantum anomalous Hall insula-tors.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Aharonov-Casher effect in Bi$_{\rm 2}$Se$_{\rm 3}$ square-ring interferometers

Electrical control of spin dynamics in Bi$_{\rm 2}$Se$_{\rm 3}$ was investigated in ring-type interferometers. Aharonov-Bohm and Altshuler-Aronov-Spivak resistance oscillations against magnetic field, and Aharorov-Casher resistance oscillations against gate voltage were observed in the presence of a Berry phase of $π$. A very large tunability of spin precession angle by gate voltage has been obtained, indicating that Bi$_{\rm 2}$Se$_{\rm 3}$-related materials with strong spin-orbit coupling are promising candidates for constructing novel spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Topological structure of the vortex solution in Jackiw-Pi model

By using $ϕ$ -mapping method, we discuss the topological structure of the self-duality solution in Jackiw-Pi model in terms of gauge potential decomposition. We set up relationship between Chern-Simons vortices solution and topological number which is determined by Hopf index and and Brouwer degree. We also give the quantization of flux in the case. Then, we study the angular momentum of the vortex, it can be expressed in terms of the flux.

0 citations0 reviewsNo code linkedOpen access