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Researcher profile

Yongqing Li

Yongqing Li contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciComputer Visioncond-mat.othercond-mat.str-elcond-mat.supr-coneess.IVquant-ph

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Published work

6 published item(s)

preprint2026arXiv

Real-Time Reconstruction of 3D Bone Models via Very-Low-Dose Protocols

Patient-specific bone models are essential for designing surgical guides and preoperative planning, as they enable the visualization of intricate anatomical structures. However, traditional CT-based approaches for creating bone models are limited to preoperative use due to the low flexibility and high radiation exposure of CT and time-consuming manual delineation. Here, we introduce Semi-Supervised Reconstruction with Knowledge Distillation (SSR-KD), a fast and accurate AI framework to reconstruct high-quality bone models from biplanar X-rays in 30 seconds, with an average error under 1.0 mm, eliminating the dependence on CT and manual work. Additionally, high tibial osteotomy simulation was performed by experts on reconstructed bone models, demonstrating that bone models reconstructed from biplanar X-rays have comparable clinical applicability to those annotated from CT. Overall, our approach accelerates the process, reduces radiation exposure, enables intraoperative guidance, and significantly improves the practicality of bone models, offering transformative applications in orthopedics.

0 citations0 reviewsNo code linkedOpen access
preprint2024arXiv

Local distortion driven magnetic phase switching in pyrochlore $Yb_2(Ti_{1-x}Sn_x)_2O_7$

While it is commonly accepted that the disorder induced by magnetic ion doping in quantum magnets usually generates a rugged free-energy landscape resulting in slow or glassy spin dynamics, the disorder/distortion effects associated with non-magnetic ion sites doping are still illusive. Here, using AC susceptibility measurements, we show that the mixture of Sn/Ti on the non-magnetic ion sites of pyrochlore $Yb_2(Ti_{1-x}Sn_x)_2O_7$ induces an antiferromagnetic ground state despite both parent compounds, $Yb_2Ti_2O_7$, and $Yb_2Sn_2O_7$, order ferromagnetically. Local structure studies through neutron total scattering reveals the local distortion in the non-magnetic ion sites and its strong correlation with the magnetic phase switching. Our study, for the first time, demonstrates the local distortion as induced by the non-magnetic ion site mixture could be a new path to achieve magnetic phase switching, which has been traditionally obtained by external stimuli such as temperature, magnetic field, pressure, strain, light, etc.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Anomalous Hall Effect in Layered Ferrimagnet MnSb2Te4

We report on low-temperature electron transport properties of MnSb2Te4, a candidate of ferrimagnetic Weyl semimetal. Long -range magnetic order is manifested as a nearly square-shaped hysteresis loop in the anomalous Hall resistance, as well as sharp jumps in the magnetoresistance. At temperatures below 4 K, a lnT-type upturn appears in the temperature dependence of longitudinal resistance, which can be attributed to the electron-electron interaction (EEI), since the weak localization can be excluded by the temperature dependence of magnetoresistance. Although the anomalous Hall resistance exhibits a similar lnT-type upturn in the same temperature range, such correction is absent in the anomalous Hall conductivity. Our work demonstrates that MnSb2Te4 microflakes provide an ideal system to test the theory of EEI correction to the anomalous Hall effect.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

Hybrid semiconductor-superconductor InAs-Al nanowires with uniform and defect-free crystal interfaces are one of the most promising candidates used in the quest for Majorana zero modes (MZMs). However, InAs nanowires often exhibit a high density of randomly distributed twin defects and stacking faults, which result in an uncontrolled and non-uniform InAs-Al interface. Furthermore, this type of disorder can create potential inhomogeneity in the wire, destroy the topological gap, and form trivial sub-gap states mimicking MZM in transport experiments. Further study shows that reducing the InAs nanowire diameter from growth can significantly suppress the formation of these defects and stacking faults. Here, we demonstrate the in situ growth of ultra-thin InAs nanowires with epitaxial Al film by molecular-beam epitaxy. Our InAs diameter (~ 30 nm) is only one-third of the diameters (~ 100 nm) commonly used in literatures. The ultra-thin InAs nanowires are pure phase crystals for various different growth directions, suggesting a low level of disorder. Transmission electron microscopy confirms an atomically sharp and uniform interface between the Al shell and the InAs wire. Quantum transport study on these devices resolves a hard induced superconducting gap and $2e^-$ periodic Coulomb blockade at zero magnetic field, a necessary step for future MZM experiments. A large zero bias conductance peak with a peak height reaching 80% of $2e^2/h$ is observed.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Robust Gapless Surface State against Surface Magnetic Impurities on (Bi$_{0.5}$Sb$_{0.5}$)$_2$Te$_3$ Evidenced by In Situ Magnetotransport Measurements

Despite extensive experimental and theoretical efforts, the important issue of the effects of surface magnetic impurities on the topological surface state of a topological insulator (TI) remains unresolved. We elucidate the effects of Cr impurities on epitaxial thin films of (Bi$_{0.5}$Sb$_{0.5}$)$_{2}$Te$_{3}$: Cr adatoms are incrementally deposited onto the TI held in ultrahigh vacuum at low temperatures, and \textit{in situ} magnetoconductivity and Hall effect measurements are performed at each increment with electrostatic gating. In the experimentally identified surface transport regime, the measured minimum electron density shows a non-monotonic evolution with the Cr density ($n_{\mathrm{Cr}}$): it first increases and then decreases with $n_{\mathrm{Cr}}$. This unusual behavior is ascribed to the dual roles of the Cr as ionized impurities and electron donors, having competing effects of enhancing and decreasing the electronic inhomogeneities in the surface state at low and high $n_{\mathrm{Cr}}$ respectively. The magnetoconductivity is obtained for different $n_{\mathrm{Cr}}$ on one and the same sample, which yields clear evidence that the weak antilocalization effect persists and the surface state remains gapless up to the highest $n_{\mathrm{Cr}}$, contrary to the expectation that the deposited Cr should break the time reversal symmetry and induce a gap opening at the Dirac point.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Transport in two-dimensional topological materials: recent developments in experiment and theory

We review theoretical and experimental highlights in transport in two-dimensional materials focussing on key developments over the last five years. Topological insulators are finding applications in magnetic devices, while Hall transport in doped samples and the general issue of topological protection remain controversial. In transition metal dichalcogenides valley-dependent electrical and optical phenomena continue to stimulate state-of-the-art experiments. In Weyl semimetals the properties of Fermi arcs are being actively investigated. A new field, expected to grow in the near future, focuses on the non-linear electrical and optical responses of topological materials, where fundamental questions are once more being asked about the intertwining roles of the Berry curvature and disorder scattering. In topological superconductors the quest for chiral superconductivity, Majorana fermions and topological quantum computing is continuing apace.

0 citations0 reviewsNo code linkedOpen access