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Jian Liao

Jian Liao appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallComputation and Languagecond-mat.mtrl-sciHuman-Computer Interaction

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Published work

4 published item(s)

preprint2022arXiv

RealityTalk: Real-Time Speech-Driven Augmented Presentation for AR Live Storytelling

We present RealityTalk, a system that augments real-time live presentations with speech-driven interactive virtual elements. Augmented presentations leverage embedded visuals and animation for engaging and expressive storytelling. However, existing tools for live presentations often lack interactivity and improvisation, while creating such effects in video editing tools require significant time and expertise. RealityTalk enables users to create live augmented presentations with real-time speech-driven interactions. The user can interactively prompt, move, and manipulate graphical elements through real-time speech and supporting modalities. Based on our analysis of 177 existing video-edited augmented presentations, we propose a novel set of interaction techniques and then incorporated them into RealityTalk. We evaluate our tool from a presenter's perspective to demonstrate the effectiveness of our system.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Giant semiclassical magnetoresistance in high mobility TaAs2 semimetal

We report the observation of colossal positive magnetoresistance (MR) in single crystalline, high mobility TaAs2 semimetal. The excellent fit of MR by a single quadratic function of the magnetic field B over a wide temperature range (T = 2-300 K) suggests the semiclassical nature of the MR. The measurements of Hall effect and Shubnikov-de Haas oscillations, as well as band structure calculations suggest that the giant MR originates from the nearly perfectly compensated electrons and holes in TaAs2. The quadratic MR can even exceed 1,200,000% at B = 9 T and T = 2 K, which is one of the largest values among those of all known semi-metallic compounds including the very recently discovered WTe2 and NbSb2. The giant positive magnetoresistance in TaAs2, which not only has a fundamentally different origin from the negative colossal MR observed in magnetic systems, but also provides a nice complemental system that will be beneficial for applications in magnetoelectronic devices

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Observation of Anderson localization in ultrathin films of three-dimensional topological insulators

Anderson localization, the absence of diffusive transport in disordered systems, has been manifested as hopping transport in numerous electronic systems, whereas in recently discovered topological insulators it has not been directly observed. Here we report experimental demonstration of transition from diffusive transport in the weak antilocalization regime to variable range hopping transport in the Anderson localization regime with ultrathin (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ films. As disorder becomes stronger, negative magnetoconductivity due to the weak antilocalization is gradually suppressed, and eventually positive magnetoconductivity emerges when the electron system becomes strongly localized. This works reveals the critical role of disorder in the quantum transport properties of ultrathin topological insulator films, in which theories have predicted rich physics related to topological phase transitions.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Proximity effect between a topological insulator and a magnetic insulator with large perpendicular anisotropy

We report that thin films of a prototype topological insulator, Bi$_{2}$Se$_{3}$, can be epitaxially grown onto the (0001) surface of BaFe$_{12}$O$_{19}$(BaM), a magnetic insulator with high Curie temperature and large perpendicular anisotropy. In the Bi$_2$Se$_3$ thin films grown on non-magnetic substrates, classic weak antilocalization (WAL) is manifested as cusp-shaped positive magnetoresistance (MR) in perpendicular magnetic fields and parabola-shaped positive MR in parallel fields, whereas in Bi$_{2}$Se$_{3}$/BaM heterostructures the low field MR is parabola-shaped, which is positive in perpendicular fields and negative in parallel fields. The magnetic field and temperature dependence of the MR is explained as a consequence of the suppression of WAL due to strong magnetic interactions at the Bi$_{2}$Se$_{3}$/BaM interface.

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