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Chaojing Lin

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Published work

5 published item(s)

preprint2022arXiv

Non-uniform heat redistribution among multiple channels in the integer quantum Hall regime

Heat transport in multiple quantum-Hall edge channels at Landau-level filling factor nu = 2, 4, and 8 is investigated with a quantum point contact as a heat generator and a quantum dot as a local thermometer. Heat distribution among the channels remains highly non-uniform, which can be understood with the plasmon eigenmodes of the multiple channels. The heat transport can be controlled with another quantum point contact as a quantized heat valve, as manifested by stepwise increases of heat current at the thermometer. This encourages developing integrated heat circuits with quantum-Hall edge channels.

preprint2020arXiv

Quantized charge fractionalization at quantum Hall Y junctions in the disorder-dominated regime

Fractionalization is a phenomenon where an elementary excitation partitions into several pieces. This picture explains non-trivial transport through a junction of one-dimensional edge channels defined by topologically distinct quantum Hall states, for example, a hole-conjugate state at Landau-level filling factor $ν$ = 2/3. Here we employ a time-resolved scheme to identify an elementary fractionalization process; injection of charge q from a non-interaction region into an interacting and scattering region of one-dimensional channels results in the formation of a collective excitation with charge $(1-\textit{r})\textit{q}$ by reflecting fractionalized charge $\textit{rq}$. The fractionalization factors, $\textit{r}$ = 0.34$\pm$0.03 for $ν$ = 2/3 and $\textit{r}$ = 0.49$\pm$0.03 for $ν$ = 2, are consistent with the quantized values of 1/3 and 1/2, respectively, which are expected in the disorder dominated regime. The scheme can be used for generating and transporting fractionalized charges with a well-defined time course along a well-defined path.

preprint2016arXiv

Spin correlations and colossal magnetoresistance in HgCr$_2$Se$_4$

This study aims to unravel the mechanism of colossal magnetoresistance (CMR) observed in n-type HgCr$_2$Se$_4$, in which low-density conduction electrons are exchange-coupled to a three-dimensional Heisenberg ferromagnet with a Curie temperature $T_C\approx$ 105 K. Near room temperature the electron transport exhibits an ordinary semiconducting behavior. As temperature drops below $T^*\simeq2.1T_C$, the magnetic susceptibility deviates from the Curie-Weiss law, and concomitantly the transport enters an intermediate regime exhibiting a pronounced CMR effect before a transition to metallic conduction occurs at $T<T_C$. Our results suggest an important role of spin correlations not only near the critical point, but also for a wide range of temperatures ($T_C<T<T^*$) in the paramagnetic phase. In this intermediate temperature regime the transport undergoes a percolation type of transition from isolated magnetic polarons to a continuous network when temperature is lowered or magnetic field becomes stronger.

preprint2015arXiv

Evidence for Half-Metallicity in n-type HgCr2Se4

High quality HgCr$_2$Se$_4$ single crystals have been investigated by magnetization, electron transport and Andreev reflection spectroscopy. In the ferromagnetic ground state, the saturation magnetic moment of each unit cell corresponds to an integer number of electron spins (3 $μ_B$/Cr$^{3+}$), and the Hall effect measurements suggest n-type charge carriers. Spin polarizations as high as $97\%$ were obtained from fits of the differential conductance spectra of HgCr$_2$Se$_4$/Pb junctions with the modified Blonder-Tinkham-Klapwijk (BTK) theory. The temperature and bias-voltage dependencies of the sub-gap conductance are consistent with recent theoretical calculations based on spin active scatterings at a superconductor/half metal interface. Our results suggest that n-HgCr$_2$Se$_4$ is a half metal, in agreement with theoretical calculations that also predict undoped HgCr$_2$Se$_4$ is a magnetic Weyl semimetal.

preprint2015arXiv

Observation of Anderson localization in ultrathin films of three-dimensional topological insulators

Anderson localization, the absence of diffusive transport in disordered systems, has been manifested as hopping transport in numerous electronic systems, whereas in recently discovered topological insulators it has not been directly observed. Here we report experimental demonstration of transition from diffusive transport in the weak antilocalization regime to variable range hopping transport in the Anderson localization regime with ultrathin (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ films. As disorder becomes stronger, negative magnetoconductivity due to the weak antilocalization is gradually suppressed, and eventually positive magnetoconductivity emerges when the electron system becomes strongly localized. This works reveals the critical role of disorder in the quantum transport properties of ultrathin topological insulator films, in which theories have predicted rich physics related to topological phase transitions.