BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Kehui Wu

Kehui Wu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elphysics.comp-phcond-mat.supr-con

Catalog footprint

What is connected

29works
5topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

29 published item(s)

preprint2022arXiv

Exfoliation of 2D van der Waals crystals in ultrahigh vacuum for interface engineering

Two-dimensional (2D) materials and their heterostructures have been intensively studied in recent years due to their potential applications in electronic, optoelectronic, and spintronic devices. Nonetheless, the realization of 2D heterostructures with atomically flat and clean interfaces remains challenging, especially for air-sensitive materials, which hinders the in-depth investigation of interface-induced phenomena and the fabrication of high-quality devices. Here, we circumvented this challenge by exfoliating 2D materials in an ultrahigh vacuum. Remarkably, ultraflat and clean substrate surfaces can assist the exfoliation of 2D materials, regardless of the substrate and 2D material, thus providing a universal method for the preparation of heterostructures with ideal interfaces. In addition, we studied the properties of two prototypical systems that cannot be achieved previously, including the electronic structure of monolayer phospherene and optical responses of transition metal dichalcogenides on different metal substrates. Our work paves the way to engineer rich interface-induced phenomena, such as proximity effects and moiré superlattices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Observation of one-dimensional Dirac fermions in silicon nanoribbons

Dirac materials, which feature Dirac cones in the reciprocal space, have been one of the hottest topics in condensed matter physics in the past decade. To date, 2D and 3D Dirac Fermions have been extensively studied, while their 1D counterparts are rare. Recently, Si nanoribbons (SiNRs), which are composed of alternating pentagonal Si rings, have attracted intensive attention. However, the electronic structure and topological properties of SiNRs are still elusive. Here, by angle-resolved photoemission spectroscopy, scanning tunneling microscopy/spectroscopy measurements, first-principles calculations, and tight-binding model analysis, we demonstrate the existence of 1D Dirac Fermions in SiNRs. Our theoretical analysis shows that the Dirac cones derive from the armchairlike Si chain in the center of the nanoribbon and can be described by the Su-Schrieffer-Heeger model. These results establish SiNRs as a platform for studying the novel physical properties in 1D Dirac materials.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Observation of topological flat bands in the kagome semiconductor Nb$_3$Cl$_8$

The destructive interference of wavefunctions in a kagome lattice can give rise to topological flat bands (TFBs) with a highly degenerate state of electrons. Recently, TFBs have been observed in several kagome metals, including Fe$_3$Sn$_2$, FeSn, CoSn, and YMn$_6$Sn$_6$. Nonetheless, kagome materials that are both exfoliable and semiconducting are lacking, which seriously hinders their device applications. Herein, we show that Nb$_3$Cl$_8$, which hosts a breathing kagome lattice, is gapped out because of the absence of inversion symmetry, while the TFBs survive because of the protection of the mirror reflection symmetry. By angle-resolved photoemission spectroscopy measurements and first-principles calculations, we directly observe the TFB and a moderate band gap in Nb$_3$Cl$_8$. By mechanical exfoliation, we successfully obtain monolayers of Nb$_3$Cl$_8$ and confirm that they are stable under ambient conditions. In addition, our calculations show that monolayers of Nb$_3$Cl$_8$ have a magnetic ground state, thus providing opportunities to study the interplay between geometry, topology, and magnetism.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Experimental evidence of monolayer AlB$_2$ with symmetry-protected Dirac cones

Monolayer AlB$_2$ is composed of two atomic layers: honeycomb borophene and triangular aluminum. In contrast with the bulk phase, monolayer AlB$_2$ is predicted to be a superconductor with a high critical temperature. Here, we demonstrate that monolayer AlB$_2$ can be synthesized on Al(111) via molecular beam epitaxy. Our theoretical calculations revealed that the monolayer AlB$_2$ hosts several Dirac cones along the $Γ$--M and $Γ$--K directions; these Dirac cones are protected by crystal symmetries and are thus resistant to external perturbations. The extraordinary electronic structure of the monolayer AlB$_2$ was confirmed via angle-resolved photoemission spectroscopy measurements. These results are likely to stimulate further research interest to explore the exotic properties arising from the interplay of Dirac fermions and superconductivity in two-dimensional materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Observation of quantum spin Hall states in Ta$_2$Pd$_3$Te$_5$

Two-dimensional topological insulators (2DTIs), which host the quantum spin Hall (QSH) effect, are one of the key materials in next-generation spintronic devices. To date, experimental evidence of the QSH effect has only been observed in a few materials, and thus, the search for new 2DTIs is at the forefront of physical and materials science. Here, we report experimental evidence of a 2DTI in the van der Waals material Ta$_2$Pd$_3$Te$_5$. First-principles calculations show that each monolayer of Ta$_2$Pd$_3$Te$_5$ is a 2DTI with weak interlayer interactions. Combined transport, angle-resolved photoemission spectroscopy, and scanning tunneling microscopy measurements confirm the existence of a band gap at the Fermi level and topological edge states inside the gap. These results demonstrate that Ta$_2$Pd$_3$Te$_5$ is a promising material for fabricating spintronic devices based on the QSH effect.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Robust Gapless Surface State against Surface Magnetic Impurities on (Bi$_{0.5}$Sb$_{0.5}$)$_2$Te$_3$ Evidenced by In Situ Magnetotransport Measurements

Despite extensive experimental and theoretical efforts, the important issue of the effects of surface magnetic impurities on the topological surface state of a topological insulator (TI) remains unresolved. We elucidate the effects of Cr impurities on epitaxial thin films of (Bi$_{0.5}$Sb$_{0.5}$)$_{2}$Te$_{3}$: Cr adatoms are incrementally deposited onto the TI held in ultrahigh vacuum at low temperatures, and \textit{in situ} magnetoconductivity and Hall effect measurements are performed at each increment with electrostatic gating. In the experimentally identified surface transport regime, the measured minimum electron density shows a non-monotonic evolution with the Cr density ($n_{\mathrm{Cr}}$): it first increases and then decreases with $n_{\mathrm{Cr}}$. This unusual behavior is ascribed to the dual roles of the Cr as ionized impurities and electron donors, having competing effects of enhancing and decreasing the electronic inhomogeneities in the surface state at low and high $n_{\mathrm{Cr}}$ respectively. The magnetoconductivity is obtained for different $n_{\mathrm{Cr}}$ on one and the same sample, which yields clear evidence that the weak antilocalization effect persists and the surface state remains gapless up to the highest $n_{\mathrm{Cr}}$, contrary to the expectation that the deposited Cr should break the time reversal symmetry and induce a gap opening at the Dirac point.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Direct Evidence of Metallic Bands in a Monolayer Boron Sheet

The search for metallic boron allotropes has attracted great attention in the past decades and recent theoretical works predict the existence of metallicity in monolayer boron. Here, we synthesize the \b{eta}12-sheet monolayer boron on a Ag(111) surface and confirm the presence of metallic boron-derived bands using angle-resolved photoemission spectroscopy. The Fermi surface is composed of one electron pocket at the S point and a pair of hole pockets near the X point, which is supported by the first-principles calculations. The metallic boron allotrope in \b{eta}12 sheet opens the way to novel physics and chemistry in material science.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Chemical Potential Fluctuations in Topological Insulator (Bi$_{0.5}$Sb$_{0.5}$)$_2$Te$_3$ Films Visualized by Photocurrent Spectroscopy

We investigate the photocurrent properties of the topological insulator (Bi$_{0.5}$Sb$_{0.5}$)$_2$Te$_3$ on SrTiO$_3$-substrates. We find reproducible, submicron photocurrent patterns generated by long-range chemical potential fluctuations, occurring predominantly at the topological insulator/substrate interface. We fabricate nano-plowed constrictions which comprise single potential fluctuations. Hereby, we can quantify the magnitude of the disorder potential to be in the meV range. The results further suggest a dominating photo-thermoelectric current generated in the surface states in such nanoscale constrictions.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Experimental Realization of Two-Dimensional Boron Sheets

Boron is the fifth element in the periodic table and possesses rich chemistry second only to carbon. A striking feature of boron is that B12 icosahedral cages occur as the building blocks in bulk boron and many boron compounds. This is in contrast to its neighboring element, carbon, which prefers 2D layered structure (graphite) in its bulk form. On the other hand, boron clusters of medium size have been predicted to be planar or quasi-planar, such as B12+ , B13+, B19-, B36, and so on. This is also in contrast to carbon clusters which exhibit various cage structures (fullerenes). Therefore, boron and carbon can be viewed as a set of complementary chemical systems in their bulk and cluster structures. Now, with the boom of graphene, an intriguing question is that whether boron can also form a monoatomic-layer 2D sheet structure? Here, we report the first successful experimental realization of 2D boron sheets. We have revealed two types of boron sheet structures, corresponding to a triangular boron lattice with different arrangements of the hexagonal holes. Moreover, our boron sheets were found to be relatively stable against oxidization, and interacts only weekly with the substrate. The realization of such a long expected 2D boron sheet could open a door toward boron electronics, in analogous to the carbon electronics based on graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

From Silicene to Half-Silicane by Hydrogenation

Graphane is graphene fully hydrogenated from both sides, forming a 1x1 structure, where all C atoms are in sp3 configuration. In silicene, the Si atoms are in a mix-sp2/sp3 configuration, it is therefore natural to imagine silicane in analogue to graphane. However, monoatomic silicene sheet grown on substrates generally reconstructs into different phases, and only partially hydrogenated silicene with reconstructions had been reported before. In this report we produce half-silicane, where one Si sublattice is fully H-saturated and the other sublattice is intact, forming a perfect 1x1 structure. By hydrogenating various silicene phases on Ag(111) substrate, we found that only the (2r3x2r3)R30° phase can produce half-silicane. Interestingly, this phase was previous considered to be a highly defective or incomplete silicene structure. Our results indicate that the structure of (2r3x2r3)R30° phase involves a complete silicene-1x1 lattice instead of defective fragments, and the formation mechanism of half-silicane was discussed with the help of first principles calculations.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Investigation of Electron-Phonon Coupling in Epitaxial Silicene by In-situ Raman Spectroscopy

In this letter, we report that the special coupling between Dirac fermion and lattice vibrations, in other words, electron-phonon coupling (EPC), in silicene layers on Ag(111) surface was probed by an in-situ Raman spectroscopy. We find the EPC is significantly modulated due to tensile strain, which results from the lattice mismatch between silicene and the substrate, and the charge doping from the substrate. The special phonon modes corresponding to two-dimensional electron gas scattering at edge sites in the silicene were identified. Detecting relationship between EPC and Dirac fermion through the Raman scattering will provide a direct route to investigate the exotic property in buckled two-dimensional honeycomb materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Observation of Anderson localization in ultrathin films of three-dimensional topological insulators

Anderson localization, the absence of diffusive transport in disordered systems, has been manifested as hopping transport in numerous electronic systems, whereas in recently discovered topological insulators it has not been directly observed. Here we report experimental demonstration of transition from diffusive transport in the weak antilocalization regime to variable range hopping transport in the Anderson localization regime with ultrathin (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ films. As disorder becomes stronger, negative magnetoconductivity due to the weak antilocalization is gradually suppressed, and eventually positive magnetoconductivity emerges when the electron system becomes strongly localized. This works reveals the critical role of disorder in the quantum transport properties of ultrathin topological insulator films, in which theories have predicted rich physics related to topological phase transitions.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Observation of van Hove Singularities in Twisted Silicene Multilayers

Interlayer interactions perturb the electronic structure of two-dimensional materials and lead to new physical phenomena, such as van Hove singularities and Hofstadter's butterfly pattern. Silicene, the recently discovered two-dimensional form of silicon, is quite unique, in that silicon atoms adopt competing <i>sp</i><sup>2</sup> and <i>sp</i><sup>3</sup> hybridization states leading to a low-buckled structure promising relatively strong interlayer interaction. In multilayer silicene, the stacking order provides an important yet rarely explored degree of freedom for tuning its electronic structures through manipulating interlayer coupling. Here, we report the emergence of van Hove singularities in the multilayer silicene created by an interlayer rotation. We demonstrate that even a large-angle rotation (> 20<sup>o</sup>) between stacked silicene layers can generate a Moire pattern and van Hove singularities due to the strong interlayer coupling in multilayer silicene. Our study suggests an intriguing method for expanding the tunability of the electronic structure for electronic applications in this two-dimensional material.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Point defects in epitaxial silicene on Ag(111) surface

Silicene, a counterpart of graphene, has achieved rapid development due to its exotic electronic properties and excellent compatibility with the mature silicon-based semiconductor technology. Its low room-temperature mobility of about 100 cm2V-1s-1, however, inhibits device applications such as in field-effect transistors. Generally, defects and grain boundaries would act as scattering centers and thus reduce the carrier mobility. In this paper, the morphologies of various point defects in epitaxial silicene on Ag(111) surfaces have been systematically investigated using first-principles calculations combined with experimental scanning tunneling microscope (STM) observations. The STM signatures for various defects in epitaxial silicene on Ag(111) surface are identified. In particular, the formation energies of point defects in Ag(111)-supported silicene sheets show an interesting dependence on the superstructures, which, in turn, may have implications for controlling the defect density during the synthesis of silicene. Through estimating the concentrations of various point defects in different silicene superstructures, the mystery of the defective appearance of v13*v13 silicene in experiments is revealed, and 4*4 silicene sheet is thought to be the most suitable structure for future device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Proximity effect between a topological insulator and a magnetic insulator with large perpendicular anisotropy

We report that thin films of a prototype topological insulator, Bi$_{2}$Se$_{3}$, can be epitaxially grown onto the (0001) surface of BaFe$_{12}$O$_{19}$(BaM), a magnetic insulator with high Curie temperature and large perpendicular anisotropy. In the Bi$_2$Se$_3$ thin films grown on non-magnetic substrates, classic weak antilocalization (WAL) is manifested as cusp-shaped positive magnetoresistance (MR) in perpendicular magnetic fields and parabola-shaped positive MR in parallel fields, whereas in Bi$_{2}$Se$_{3}$/BaM heterostructures the low field MR is parabola-shaped, which is positive in perpendicular fields and negative in parallel fields. The magnetic field and temperature dependence of the MR is explained as a consequence of the suppression of WAL due to strong magnetic interactions at the Bi$_{2}$Se$_{3}$/BaM interface.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Quantized one-dimensional edge channels with strong spin-orbit coupling in 3D topological insulators

A strong coupling between the electron spin and its motion is one of the prerequisites of spin-based data storage and electronics. A major obstacle is to find spin-orbit coupled materials where the electron spin can be probed and manipulated on macroscopic length scales, for instance across the gate channel of a spin-transistor. Here, we report on millimeter-scale edge channels with a conductance quantized at a single quantum 1 $\times$ $e^2/h$ at zero magnetic field. The quantum transport is found at the lateral edges of three-dimensional topological insulators made of bismuth chalcogenides. The data are explained by a lateral, one-dimensional quantum confinement of non-topological surface states with a strong Rashba spin-orbit coupling. This edge transport can be switched on and off by an electrostatic field-effect. Our results are fundamentally different from an edge transport in quantum spin Hall insulators and quantum anomalous Hall insula-tors.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Structure and Quantum Well States in Silicene Nanoribbons on Ag(110)

We have performed scanning tunneling microscopy/spectroscopy (STM/STS) study and first-principles calculations to investigate the atomic structure and electronic properties of silicon nanoribbons (SiNRs) grown on Ag(110). Despite of the extensive research on SiNRs in the last decades, its atomic structure is still not fully understood so far. In this report we determine that the structure of SiNRs/Ag(110) is armchair silicene nanoribbon with reconstructed edges. Meanwhile, pronounced quantum well states (QWS) in SiNRs were observed and their energy spectrum was systematically measured. The QWS are due to the confinement of quasiparticles perpendicular to the nanoribbon and can be well explained by the theory of one-dimensional (1D) 'particle-in-a-box' model in quantum mechanics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Variable Coupling Strength of Silicene on Ag(111)

We performed a scanning tunneling microscopy and spectroscopy (STM/STS) study on the electronic structures of of root(3)Xroot(3)-silicene on Ag(111). We find that the coupling strength of root(3)Xroot(3)-silicene with Ag(111) substrate is variable at different regions, giving rise to notable effects in experiments. These evidences of decoupling or variable interaction of silicene with the substrate are helpful to in-depth understanding of the structure and electronic properties of silicene.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Persistent Dirac Fermion State on Bulk-like Si(111) Surface

The "multilayer silicene" films were grown on Ag(111), with increasing thickness above 30 monolayers (ML). We found that the "multilayer silicene" is indeed a bulk Si(111) film. Such Si film on Ag(111) always exhibits a root(3)xroot(3) honeycomb superstructure on surface. Delocalized surface state as well as linear energy-momentum dispersion was revealed by quasiparticle interference patterns (QPI) on the surface, which proves the existence of Dirac fermions state. Our results indicate that bulk silicon with diamond structure can also host Dirac fermions, which makes the system even more attractive for further applications compared with monolayer silicene.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Tuning the Band Gap in Silicene by Oxidation

Silicene monolayers grown on Ag(111) surfaces demonstrate a band gap that is tunable by oxygen adatoms from semimetallic to semiconducting type. By using low-temperature scanning tunneling microscopy, it is found that the adsorption configurations and amounts of oxygen adatoms on the silicene surface are critical for band-gap engineering, which is dominated by different buckled structures in R13xR13, 4x4, and 2R3x2R3 silicene layers. The Si-O-Si bonds are the most energy-favored species formed on R13xR13, 4x4, and 2R3x2R3 structures under oxidation, which is verified by in-situ Raman spectroscopy as well as first-principles calculations. The silicene monolayers retain their structures when fully covered by oxygen adatoms. Our work demonstrates the feasibility of tuning the band gap of silicene with oxygen adatoms, which, in turn, expands the base of available two-dimensional electronic materials for devices with properties that is hardly achieved with graphene oxide.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

d+id' Chiral Superconductivity in Bilayer Silicene

We investigate the structure and physical properties of the undoped bilayer silicene through first-principles calculations and find the system is intrinsically metallic with sizable pocket Fermi surfaces. When realistic electron-electron interaction turns on, the system is identified as a chiral d+id' topological superconductor mediated by the strong spin fluctuation on the border of the antiferromagnetic spin density wave order. Moreover, the tunable Fermi pocket area via strain makes it possible to adjust the spin density wave critical interaction strength near the real one and enables a high superconducting critical temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Observation of Dirac cone warping and chirality effects in silicene

We performed low temperature scanning tunneling microscopy (STM) and spectroscopy (STS) studies on the electronic properties of (R3xR3)R30° phase of silicene on Ag(111) surface. We found the existence of Dirac Fermion chirality through the observation of -1.5 and -1.0 power law decay of quasiparticle interference (QPI) patterns. Moreover, in contrast to the trigonal warping of Dirac cone in graphene, we found that the Dirac cone of silicene is hexagonally warped, which is further confirmed by density functional calculations and explained by the unique superstructure of silicene. Our results demonstrate that the (R3xR3)R30° phase is an ideal system to investigate the unique Dirac Fermion properties of silicene.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Evidence for Dirac Fermions in a honeycomb lattice based on silicon

Silicene, a sheet of silicon atoms in a honeycomb lattice, was proposed to be a new Dirac-type electron system similar as graphene. We performed scanning tunneling microscopy and spectroscopy studies on the atomic and electronic properties of silicene on Ag(111). An unexpected $\sqrt{3}\times \sqrt{3}$ reconstruction was found, which is explained by an extra-buckling model. Pronounced quasi-particle interferences (QPI) patterns, originating from both the intervalley and intravalley scattering, were observed. From the QPI patterns we derived a linear energy-momentum dispersion and a large Fermi velocity, which prove the existence of Dirac Fermions in silicene.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Evidence of silicene in honeycomb structures of silicon on Ag(111)

In the search for evidence of silicene, a two-dimensional honeycomb lattice of silicon, it is important to obtain a complete picture for the evolution of Si structures on Ag(111), which is believed to be the most suitable substrate for growth of silicene so far. In this work we report the finding and evolution of several monolayer superstructures of silicon on Ag(111) depending on the coverage and temperature. Combined with first-principles calculations, the detailed structures of these phases have been illuminated. These structure were found to share common building blocks of silicon rings, and they evolve from a fragment of silicene to a complete monolayer silicene and multilayer silicene. Our results elucidate how silicene formes on Ag(111) surface and provide methods to synthesize high-quality and large-scale silicene.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spontaneous Symmetry Breaking and Dynamic Phase Transition in Monolayer Silicene

The (r3xr3)R30° honeycomb of silicene monolayer on Ag(111) was found to undergo a phase transition to two types of mirror-symmetric boundary-separated rhombic phases at temperatures below 40 K by scanning tunneling microscopy. The first-principles calculations reveal that weak interactions between silicene and Ag(111) drive the spontaneous ultra buckling in the monolayer silicene, forming two energy-degenerate and mirror-symmetric (r3xr3)R30° rhombic phases, in which the linear band dispersion near Dirac point (DP) and a significant gap opening (150 meV) at DP were induced. The low transition barrier between these two phases enables them interchangeable through dynamic flip-flop motion, resulting in the (r3xr3)R30° honeycomb structure observed at high temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Direct Determination of Electron-Phonon Coupling Matrix Element in a Correlated System

High-resolution electron energy loss spectroscopy measurements have been carried out on an optimally doped cuprate Bi2Sr2CaCu2O8+δ. The momentum-dependent linewidth and the dispersion of an A1 optical phonon are obtained. Based on these data as well as the detailed knowledge of the electronic structure from angle-resolved photoemission spectroscopy, we develop a scheme to determine the full structure of electron-phonon coupling for a specific phonon mode, thus providing a general method for directly resolving the EPC matrix element in systems with anisotropic electronic structures.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Evolution of the Surface Structures on SrTiO$_3$(110) Tuned by Ti or Sr Concentration

The surface structure of the SrTiO$_3$(110) polar surface is studied by scanning tunneling microscopy and X-ray photoelectron spectroscopy. Monophased reconstructions in (5$\times$1), (4$\times$1), (2$\times$8), and (6$\times$8) are obtained, respectively, and the evolution between these phases can be tuned reversibly by adjusting the Ar$^{+}$ sputtering dose or the amount of Sr/Ti evaporation. Upon annealing, the surface reaches the thermodynamic equilibrium that is determined by the surface metal concentration. The different electronic structures and absorption behaviors of the surface with different reconstructions are investigated.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Quintuple-layer epitaxy of high-quality Bi2Se3 thin films for topological insulator

We report the growth of atomically smooth, single crystalline Bi2Se3 thin films on Si(111) by using molecular beam epitaxy. Scanning tunneling microscopy, low-energy electron diffraction, X-ray photoelectron emission spectroscopy and Raman spectroscopy were used to characterize the stoichiometry and crystallinity of the film. The film grows in a self-organized quintuple-layer by quintuple-layer mode, and atomically smooth film can be obtained with the thickness down to one quintuple-layer (~1nm).

0 citations0 reviewsNo code linkedOpen access