BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Xueyun Wang

Xueyun Wang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.str-elDistributed, Parallel, and Cluster Computingeess.SPphysics.ins-det

Catalog footprint

What is connected

15works
5topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

15 published item(s)

preprint2021arXiv

Asynchronous and Load-Balanced Union-Find for Distributed and Parallel Scientific Data Visualization and Analysis

We present a novel distributed union-find algorithm that features asynchronous parallelism and k-d tree based load balancing for scalable visualization and analysis of scientific data. Applications of union-find include level set extraction and critical point tracking, but distributed union-find can suffer from high synchronization costs and imbalanced workloads across parallel processes. In this study, we prove that global synchronizations in existing distributed union-find can be eliminated without changing final results, allowing overlapped communications and computations for scalable processing. We also use a k-d tree decomposition to redistribute inputs, in order to improve workload balancing. We benchmark the scalability of our algorithm with up to 1,024 processes using both synthetic and application data. We demonstrate the use of our algorithm in critical point tracking and super-level set extraction with high-speed imaging experiments and fusion plasma simulations, respectively.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

The Observation of Ferroelastic and Ferrielectric Domains in AgNbO3 Single Crystal

Compared to AgNbO3 based ceramics, the experimental investigations on the single crystalline AgNbO3, especially the ground state and ferroic domain structures, are not on the same level. Here in this work, based on successfully synthesized AgNbO3 single crystal using flux method, we observed the coexistence of ferroelastic and ferrielectric domain structures by a combination study of polarized light microscopy and piezoresponse force microscope, this finding may provide a new aspect for studying AgNbO3. The result also suggests a weak electromechanical response from the ferrielectric phase of AgNbO3 which is also supported by the transmission electron microscope characterization. Our results reveal that the AgNbO3 single crystal is in a polar ferrielectric phase at room temperature, clarifying its ground state which is controversial from the AgNbO3 ceramic materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Conductive Domain Walls in Non-Oxide Ferroelectrics Sn2P2S6

The conductive domain wall (CDW) is extensively investigated in ferroelectrics, which can be considered as a quasi-two-dimensional reconfigurable conducting channel embedded into an insulating material. Therefore, it is highly important for the application of ferroelectric nanoelectronics. Hitherto, most CDW investigations are restricted in oxides, and limited work has been reported in non-oxides to the contrary. Here, by successfully synthesizing the non-oxide ferroelectric Sn2P2S6 single crystal, we observed and confirmed the domain wall conductivity by using different scanning probe techniques which origins from the nature of inclined domain walls. Moreover, the domains separated by CDW also exhibit distinguishable electrical conductivity due to the interfacial polarization charge with opposite signs. The result provides a novel platform for understanding electrical conductivity behavior of the domains and domain walls in non-oxide ferroelectrics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Domain evolution in bended freestanding BaTiO3 ultrathin films: a phase-field simulation

Perovskite ferroelectric oxides are usually considered to be brittle materials, however, recent work [Dong et al., Science 366, 475 (2019)] demonstrated the super-elasticity in the freestanding BaTiO3 thin films. This property may originate from the ferroelectric domain evolution during the bending, which is difficult to observe in experiments. Therefore, understanding the relation among the bending deformation, thickness of the films, and the domain dynamics is critical for their potential applications in flexible ferroelectric devices. Here, we reported the dynamics of ferroelectric polarization in the freestanding BaTiO3 ultrathin films in the presence of large bending deformation up to 40° using phase-field simulation. The ferroelectric domain evolution reveals the transition from the flux-closure to a/c domains with "vortex-like" structures, which caused by the increase of out-of-plane ferroelectric polarization. Additionally, by varying the film thickness in the identical bending situation, we found the a/c phase with "vortex-like" structure emerges only as the film thickness reached 12 nm or higher. Results from our investigations provide instructive information for the microstructure evolution of bending ferroelectric perovskite oxide films, which could serve as guide for the future application of ferroelectric films on flexible electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Ferroelastic switching with van der Waals direction transformation in layered PdSe2 driven by uniaxial and shear strain

Uniaxial and biaxial strain approaches are usually implemented to switch the ferroelastic states, which play a key role in the application of the ferroics and shape memory materials. In this work, by using the first-principles calculations, we found not only uniaxial strain, but also shear strain can induce a novel ferroelastic switching, in which the van der Waals (vdW) layered direction rotates with the ferroelastic transition in layered bulk PdSe2. The shear strain induces ferroelastic switching with three times amplitude smaller than uniaxial strain. The novel three-states ferroelastic switching in layered PdSe2 also occurs under shear strain. Our result shows that the shear strain could be used as an effective approach for manipulating the functionalities of layered materials in potential device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Giant Polarization and Abnormal Flexural Deformation in Bent Freestanding Perovskite Oxides

Recent realizations of ultrathin freestanding perovskite oxides offer a unique platform to probe novel properties in two-dimensional oxides. Here, we observed a giant flexoelectric response in freestanding BiFeO3 and SrTiO3 in their bent state arising from strain gradients up to 4x10e7/m, suggesting a promising approach for realizing extremely large polarizations. Additionally, a substantial reversible change in thickness was discovered in bent freestanding BiFeO3, which implies an unusual bending-expansion/shrinkage and thickness-dependence Poisson's ratios in this ferroelectric membrane that has never been seen before in crystalline materials. Our theoretical modeling reveals that this unprecedented flexural deformation within the membrane is attributable to a flexoelectricity-piezoelectricity interplay. The finding unveils intriguing nanoscale electromechanical properties and provides guidance for their practical applications in flexible nanoelectromechanical systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Picosecond-precision optical time transfer in free space using flexible binary offset carrier modulation

Free-space optical time transfer that features high precision and flexibility will act a crucial role in near-future ground-to-satellite/inter-satellite clock networks and outdoor timing services. Here we propose a free-space optical flexible-binary-offset-carrier-modulated (FlexBOC-modulated) time transfer method. The utilized FlexBOC modulation could yield a comparative precision, although its occupied bandwidth is tremendously reduced by at least 97.5% compared to optical binary phase modulation. Meanwhile, the adoption of optical techniques eliminates the multi-path effect that is major limit in the current microwave satellite time transfer system. What's more, the time interval measurement avoids a continuous link that may be routinely broken by physical obstructions. For verification, a time transfer experiment with our home-built system between two sites separated by a 30-m free-space path outside the laboratory was conducted. Over a 15 h period, the time deviation is 2.3 ps in a 1-s averaging time, and averages down to 1.0 ps until ~60 s. The fractional frequency instability exhibits 4.0E-12 at a gate time of 1 s, and approaches to 2.6E10-15 at 10000 s.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Screening piezoelectricity in determination of flexoelectric coefficient at nanoscale

Piezoelectricity usually accompanies with flexoelectricity in polar materials which is the linear response of polarization to a strain gradient. Therefore, it is hard to eliminate piezoelectric effect in determination of pure flexoelectric response. In this work, we propose an analytical method to characterize the flexoelectric coefficient quantitatively at nanoscale in piezoelectric materials by screening piezoelectricity. Our results show that the flexoelectricity reduces the nanopillar stiffness while the piezoelectricity enhances it. With careful design of the shape of the nanopillars and measuring their stiffness difference, the flexoelectric coefficient can be obtained with the piezoelectric contribution eliminated completely. This approach avoids the measurement of electrical properties with dynamic load, which helps to reduce the challenge of flexoelectric measurement at nanoscale. Our work will be beneficial to quantitative characterization of flexoelectric properties and design of flexoelectric devices at nanoscale.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Anomalous lattice thermal conductivity in layered materials MNCl (M=Zr, Hf) driven by the lanthanide contraction

High performance thermoelectric devices requires materials with low lattice thermal conductivities. Many strategies, such as phonon engineering, have been made to reduce lattice thermal conductivity without simultaneously decrease of the charge transport performance. It is a simple and effective approach to use materials with heavy element to reduce the lattice thermal conductivity. Here, based on the first-principles calculations and phonon Boltzmann transport equations, we find the replacement of Zr with heavy element Hf in ZrNCl doesn't reduce the lattice thermal conductivity, instead, it surprisingly increases by about 4 times at 300K. This unusual lattice thermal conductivity is mainly attributed to the dramatic enhancement in phonon lifetimes in Hf compound, originating from the strong interatomic bonding due to lanthanide contraction. Our findings unveil the microscopic mechanisms of high thermal transport properties in materials with heavy element, providing an alternative strategy in materials design with low lattice thermal conductivity for thermoelectric applications such as power restoration and generation.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Thickness-dependent in-plane polarization and structural phase transition in van der Waals Ferroelectric CuInP2S6

Van der Waals (vdW) layered materials have rather weaker interlayer bonding than the intra-layer bonding, therefore the exfoliation along the stacking direction enables the achievement of monolayer or few layers vdW materials with emerging novel physical properties and functionalities. The ferroelectricity in vdW materials recently attracts renewed interest for the potential use in high-density storage devices. As the thickness going thinner, the competition between the surface energy, depolarization field and interfacial chemical bonds may give rise to the modification of ferroelectricity and crystalline structure, which has limited investigations. In this work, combining the piezoresponse force microscope scanning, contact resonance imaging, we report the existence of the intrinsic in-plane polarization in vdW ferroelectrics CuInP2S6 (CIPS) single crystals, whereas below a critical thickness between 90-100 nm, the in-plane polarization disappears. The Young's modulus also shows an abrupt stiffness at the critical thickness. Based on the density functional theory calculations, we ascribe these behaviors to a structural phase transition from monoclinic to trigonal structure, which is further verified by transmission electron microscope technique. Taken together, these findings demonstrate the foundational importance of structural phase transition for enhancing the rich functionality and broad utility of vdW ferroelectrics.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Sudden gap-closure across the topological phase transition in Bi$_{2-x}$In$_{x}$Se$_{3}$

The phase transition from a topological insulator to a trivial band insulator is studied by angle-resoled photoemission spectroscopy on Bi$_{2-x}$In$_{x}$Se$_{3}$ single crystals. We first report the complete evolution of the bulk band structures throughout the transition. The robust surface state and the bulk gap size ($\sim$ 0.50 eV) show no significant change upon doping for $x$ = 0.05, 0.10 and 0.175. At $x$ $\geq$ 0.225, the surface state completely disappears and the bulk gap size increases, suggesting a sudden gap-closure and topological phase transition around $x \sim$ 0.175$-$0.225. We discuss the underlying mechanism of the phase transition, proposing that it is governed by the combined effect of spin-orbit coupling and interactions upon band hybridization. Our study provides a new venue to investigate the mechanism of the topological phase transition induced by non-magnetic impurities.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Toward the intrinsic limit of topological insulator Bi2Se3

Combining high resolution scanning tunneling microscopy and first principle calculations, we identified the major native defects, in particular the Se vacancies and Se interstitial defects that are responsible for the bulk conduction and nanoscale potential fluctuation in single crystals of archetypal topological insulator Bi2Se3. Here it is established that the defect concentrations in Bi2Se3 are far above the thermodynamic limit, and that the growth kinetics dominate the observed defect concentrations. Furthermore, through careful control of the synthesis, our tunneling spectroscopy suggests that our best samples are approaching the intrinsic limit with the Fermi level inside the band gap without introducing extrinsic dopants.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Topological defects as relics of emergent continuous symmetry and Higgs condensation of disorder in ferroelectrics

Lars Onsager and Richard Feynman envisioned that the three-dimensional (3D) superfluid-to-normal $λ$ transition in $^{4}$He occurs through the proliferation of vortices. This process should hold for every phase transition in the same universality class. The role of topological defects in symmetry-breaking phase transitions has become a prime topic in cosmology and high-temperature superconductivity, even though direct imaging of these defects is challenging. Here we show that the U(1) continuous symmetry that emerges at the ferroelectric critical point of multiferroic hexagonal manganites leads to a similar proliferation of vortices. Moreover, the disorder field (vortices) is coupled to an emergent U(1) gauge field, which becomes massive by means of the Higgs mechanism when vortices condense (span the whole system) upon heating above the ferroelectric transition temperature. Direct imaging of the vortex network in hexagonal manganites offers unique experimental access to this dual description of the ferroelectric transition, while enabling tests of the Kibble-Zurek mechanism.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Unfolding of vortices into topological stripes in a multiferroic material

Multiferroic hexagonal RMnO3 (R=rare earths) crystals exhibit dense networks of vortex lines at which six domain walls merge. While the domain walls can be readily moved with an applied electric field, the vortex cores were so far impossible to control. Our experiments demonstrate that shear strain induces a Magnus-type force pulling vortices and antivortices in opposite directions and unfolding them into a topological stripe domain state. We discuss the analogy between this effect and the current-driven dynamics of vortices in superconductors and superfluids.

0 citations0 reviewsNo code linkedOpen access