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Jiawang Hong

Jiawang Hong appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-el

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Published work

23 published item(s)

preprint2021arXiv

The Observation of Ferroelastic and Ferrielectric Domains in AgNbO3 Single Crystal

Compared to AgNbO3 based ceramics, the experimental investigations on the single crystalline AgNbO3, especially the ground state and ferroic domain structures, are not on the same level. Here in this work, based on successfully synthesized AgNbO3 single crystal using flux method, we observed the coexistence of ferroelastic and ferrielectric domain structures by a combination study of polarized light microscopy and piezoresponse force microscope, this finding may provide a new aspect for studying AgNbO3. The result also suggests a weak electromechanical response from the ferrielectric phase of AgNbO3 which is also supported by the transmission electron microscope characterization. Our results reveal that the AgNbO3 single crystal is in a polar ferrielectric phase at room temperature, clarifying its ground state which is controversial from the AgNbO3 ceramic materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Conductive Domain Walls in Non-Oxide Ferroelectrics Sn2P2S6

The conductive domain wall (CDW) is extensively investigated in ferroelectrics, which can be considered as a quasi-two-dimensional reconfigurable conducting channel embedded into an insulating material. Therefore, it is highly important for the application of ferroelectric nanoelectronics. Hitherto, most CDW investigations are restricted in oxides, and limited work has been reported in non-oxides to the contrary. Here, by successfully synthesizing the non-oxide ferroelectric Sn2P2S6 single crystal, we observed and confirmed the domain wall conductivity by using different scanning probe techniques which origins from the nature of inclined domain walls. Moreover, the domains separated by CDW also exhibit distinguishable electrical conductivity due to the interfacial polarization charge with opposite signs. The result provides a novel platform for understanding electrical conductivity behavior of the domains and domain walls in non-oxide ferroelectrics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Domain evolution in bended freestanding BaTiO3 ultrathin films: a phase-field simulation

Perovskite ferroelectric oxides are usually considered to be brittle materials, however, recent work [Dong et al., Science 366, 475 (2019)] demonstrated the super-elasticity in the freestanding BaTiO3 thin films. This property may originate from the ferroelectric domain evolution during the bending, which is difficult to observe in experiments. Therefore, understanding the relation among the bending deformation, thickness of the films, and the domain dynamics is critical for their potential applications in flexible ferroelectric devices. Here, we reported the dynamics of ferroelectric polarization in the freestanding BaTiO3 ultrathin films in the presence of large bending deformation up to 40° using phase-field simulation. The ferroelectric domain evolution reveals the transition from the flux-closure to a/c domains with "vortex-like" structures, which caused by the increase of out-of-plane ferroelectric polarization. Additionally, by varying the film thickness in the identical bending situation, we found the a/c phase with "vortex-like" structure emerges only as the film thickness reached 12 nm or higher. Results from our investigations provide instructive information for the microstructure evolution of bending ferroelectric perovskite oxide films, which could serve as guide for the future application of ferroelectric films on flexible electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Ferroelastic switching with van der Waals direction transformation in layered PdSe2 driven by uniaxial and shear strain

Uniaxial and biaxial strain approaches are usually implemented to switch the ferroelastic states, which play a key role in the application of the ferroics and shape memory materials. In this work, by using the first-principles calculations, we found not only uniaxial strain, but also shear strain can induce a novel ferroelastic switching, in which the van der Waals (vdW) layered direction rotates with the ferroelastic transition in layered bulk PdSe2. The shear strain induces ferroelastic switching with three times amplitude smaller than uniaxial strain. The novel three-states ferroelastic switching in layered PdSe2 also occurs under shear strain. Our result shows that the shear strain could be used as an effective approach for manipulating the functionalities of layered materials in potential device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Flexo-diffusion effect: the strong influence on lithium diffusion induced by strain gradient

Lithium ion batteries (LIBs) work under sophisticated external force field and its electrochemical properties could be modulated by strain. Owing to the electro-mechanical coupling, the change of micro-local-structures can greatly affect lithium (Li) diffusion rate in solid state electrolytes and electrode materials of LIBs. In this study, we find that strain gradient in bilayer graphene (BLG) significantly affects Li diffusion barrier, which is termed as the flexo-diffusion effect, through first-principles calculations. The Li diffusion barrier substantially decreases/increases under the positive/negative strain gradient, leading to the change of Li diffusion coefficient in several orders of magnitude at 300 K. Interestingly, the regulation effect of strain gradient is much more significant than that of uniform strain field, which can have a remarkable effect on the rate performance of batteries, with a considerable increase in the ionic conductivity and a slight change of the original material structure. Moreover, our ab initio molecular dynamics simulations (AIMD) show that the asymmetric distorted lattice structure provides a driving force for Li diffusion, resulting in oriented diffusion along the positive strain gradient direction. These findings could extend present LIBs technologies by introducing the novel strain gradient engineering.

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preprint2020arXiv

Giant Polarization and Abnormal Flexural Deformation in Bent Freestanding Perovskite Oxides

Recent realizations of ultrathin freestanding perovskite oxides offer a unique platform to probe novel properties in two-dimensional oxides. Here, we observed a giant flexoelectric response in freestanding BiFeO3 and SrTiO3 in their bent state arising from strain gradients up to 4x10e7/m, suggesting a promising approach for realizing extremely large polarizations. Additionally, a substantial reversible change in thickness was discovered in bent freestanding BiFeO3, which implies an unusual bending-expansion/shrinkage and thickness-dependence Poisson's ratios in this ferroelectric membrane that has never been seen before in crystalline materials. Our theoretical modeling reveals that this unprecedented flexural deformation within the membrane is attributable to a flexoelectricity-piezoelectricity interplay. The finding unveils intriguing nanoscale electromechanical properties and provides guidance for their practical applications in flexible nanoelectromechanical systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Orbital-Energy Splitting in Anion Ordered Ruddlesden-Popper Halide Perovskites for Tunable Optoelectronic Applications

The electronic orbital characteristics at the band edges plays an important role in determining the electrical, optical and defect properties of perovskite photovoltaic materials. It is highly desirable to establish the relationship between the underlying atomic orbitals and the optoelectronic properties as a guide to maximize the photovoltaic performance. Here, using first-principles calculations and taking anion ordered Ruddlesden-Popper (RP) phase halide perovskites Cs$_{n+1}$Ge$_n$I$_{n+1}$Cl$_{2n}$ as an example, we demonstrate how to rationally optimize the optoelectronic properties (e.g., band gap, transition dipole matrix elements, carrier effective masses, band width) through a simple band structure parameter. Our results show that reducing the splitting energy $|Δc|$ of p orbitals of B-site atom can effectively reduce the band gap and carrier effective masses while greatly improving the optical absorption in the visible region. Thereby, the orbital-property relationship with $Δc$ is well established through biaxial compressive strain. Finally, it is shown that this approach can be reasonably extended to several other non-cubic halide perovskites with similar p orbitals characteristics at the conduction band edges. Therefore, we believe that our proposed orbital engineering approach provides atomic-level guidance for understanding and optimizing the device performance of layered perovskite solar cells.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Screening piezoelectricity in determination of flexoelectric coefficient at nanoscale

Piezoelectricity usually accompanies with flexoelectricity in polar materials which is the linear response of polarization to a strain gradient. Therefore, it is hard to eliminate piezoelectric effect in determination of pure flexoelectric response. In this work, we propose an analytical method to characterize the flexoelectric coefficient quantitatively at nanoscale in piezoelectric materials by screening piezoelectricity. Our results show that the flexoelectricity reduces the nanopillar stiffness while the piezoelectricity enhances it. With careful design of the shape of the nanopillars and measuring their stiffness difference, the flexoelectric coefficient can be obtained with the piezoelectric contribution eliminated completely. This approach avoids the measurement of electrical properties with dynamic load, which helps to reduce the challenge of flexoelectric measurement at nanoscale. Our work will be beneficial to quantitative characterization of flexoelectric properties and design of flexoelectric devices at nanoscale.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strain gradient drives lithium dendrite growth from the atomic-scale simulations

Dendrite formation is a major obstacle, such as capacity loss and short circuit, to the next-generation high-energy-density lithium (Li) metal batteries. The development of successful Li dendrite mitigation strategies is impeded by an insufficient understanding of Li dendrite growth mechanisms. Li-plating-induced internal stress in Li metal and its effect on dendrite growth have been studied in previous models and experiments, while the underlying microcosmic mechanism is elusive. Here, we analyze the role of plating-induced stress in dendrite formation through first-principles calculations and ab initio molecular dynamics simulations. We show that the deposited Li forms a stable atomic nanofilm structure on copper (Cu) substrate. It is found that the adsorption energy of Li atoms increases from the Li-Cu interface to deposited Li surface, leading to more aggregated Li atoms at the interface. Compared to the pristine Li metal, the deposited Li in the early stage becomes compacted and suffers in-plane compressive stress. Interestingly, we find that there is a giant strain gradient distribution from the Li-Cu interface to deposited Li surface, which makes the deposited atoms adjacent to the Cu surface tend to press upwards with perturbation, causing the dendrite growth. This understanding provides an insight to the atomic-scale origin of Li dendrite growth and may be useful for suppressing the Li dendrite in the Li-metal-based rechargeable batteries.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Structural Stability and Optoelectronic Properties of Tetragonal MAPbI3 under Strain

In recent years, organic-inorganic hybrid perovskites have attracted wide attention due to their excellent optoelectronic properties in the application of optoelectronic devices. In the manufacturing process of perovskite solar cells, perovskite films inevitably have residual stress caused by non-stoichiometry components and the external load. However, their effects on the structural stability and photovoltaic performance of perovskite solar cells are still not clear. In this work, we investigated the effects of external strain on the structural stability and optoelectronic properties of tetragonal MAPbI3 by using the first-principles calculations. We found that the migration barrier of I- ion increases in the presence of compressive strain and decreases with tensile strain, indicating that the compressive strain can enhance the structural stability of halide perovskites. In addition, the light absorption and electronic properties of MAPbI3 under compressive strain are also improved. The variations of the band gap under triaxial and biaxial strains are consistent within a certain range of strain, resulting from the fact that the band edge positions are mainly influenced by the Pb-I bond in the equatorial plane. Our results provide useful guidance for realizing the commercial applications of MAPbI3-based perovskite solar cells.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Anomalous lattice thermal conductivity in layered materials MNCl (M=Zr, Hf) driven by the lanthanide contraction

High performance thermoelectric devices requires materials with low lattice thermal conductivities. Many strategies, such as phonon engineering, have been made to reduce lattice thermal conductivity without simultaneously decrease of the charge transport performance. It is a simple and effective approach to use materials with heavy element to reduce the lattice thermal conductivity. Here, based on the first-principles calculations and phonon Boltzmann transport equations, we find the replacement of Zr with heavy element Hf in ZrNCl doesn't reduce the lattice thermal conductivity, instead, it surprisingly increases by about 4 times at 300K. This unusual lattice thermal conductivity is mainly attributed to the dramatic enhancement in phonon lifetimes in Hf compound, originating from the strong interatomic bonding due to lanthanide contraction. Our findings unveil the microscopic mechanisms of high thermal transport properties in materials with heavy element, providing an alternative strategy in materials design with low lattice thermal conductivity for thermoelectric applications such as power restoration and generation.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Lithium intercalation drives remarkable mechanical properties deterioration in bulk and single-layered phosphorus: A first-principles study

It is of critical importance to understand the mechanical properties change of electrode materials during lithium intercalation in the mechanical design of Li-ion batteries, for the purpose of the high reliability and safety in their applications. Here, we investigated the mechanical properties of both bulk and single layer phosphorus during the lithium intercalation process by using the first-principles calculations. Our results show that the Young's modulus of bulk and layered phosphorus strongly depends on the lithium intercalation. The mechanical bearing capacities, such as critical strain and stress, are significantly reduced by several times after lithium intercalation in both bulk and single layer phosphorus, which may reduce the reliability of Li-ion batteries. Our findings suggest that this remarkable mechanical properties deterioration during Li intercalation should be considered carefully in the mechanical design of Li-ion batteries, in order to keep they working reliably and safely in the charge-discharge process.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Spontaneous photo-generated carrier separation of SnO/BiOX (X=Cl, Br, I) bilayer under visible light irradiation for water splitting

Alloying in 2D materials plays a more and more important role due to wide range bandgap tunability and integrating the advantages of HER and OER. Here, the novel bilayers of SnO/BiOX (X= Cl, Br and I) bilayer are constructed to integrate the advantages of narrow bandgap and separating photo-generated carriers. The bandgap of the bilayers can be tuned from 1.09 to 1.84 eV, remarkably improving the utilization of solar energy. The large difference in effective masses and built-in electric field effectively hamper the fast recombination of photo-generated carries, which highly enhances the photocatalytic efficiency. Besides that, the type-II band alignment guarantee the two half reactions could occur at different surfaces. Moreover, the optical absorption (the strong transition between band edges and high joint density of states) and band-edge level further confirm the SnO/BiOX (X= Cl and Br) bilayer is a promising candidate for overall water-splitting.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Thickness-dependent in-plane polarization and structural phase transition in van der Waals Ferroelectric CuInP2S6

Van der Waals (vdW) layered materials have rather weaker interlayer bonding than the intra-layer bonding, therefore the exfoliation along the stacking direction enables the achievement of monolayer or few layers vdW materials with emerging novel physical properties and functionalities. The ferroelectricity in vdW materials recently attracts renewed interest for the potential use in high-density storage devices. As the thickness going thinner, the competition between the surface energy, depolarization field and interfacial chemical bonds may give rise to the modification of ferroelectricity and crystalline structure, which has limited investigations. In this work, combining the piezoresponse force microscope scanning, contact resonance imaging, we report the existence of the intrinsic in-plane polarization in vdW ferroelectrics CuInP2S6 (CIPS) single crystals, whereas below a critical thickness between 90-100 nm, the in-plane polarization disappears. The Young's modulus also shows an abrupt stiffness at the critical thickness. Based on the density functional theory calculations, we ascribe these behaviors to a structural phase transition from monoclinic to trigonal structure, which is further verified by transmission electron microscope technique. Taken together, these findings demonstrate the foundational importance of structural phase transition for enhancing the rich functionality and broad utility of vdW ferroelectrics.

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preprint2016arXiv

Analytical method to determine flexoelectric coupling coefficient at nanoscale

Flexoelectricity is defined as the coupling between strain gradient and polarization, which is expected to be remarkable at nanoscale. However, measuring the flexoelectricity at nanoscale is challenging. In the present work, an analytical method for measuring the flexoelectric coupling coefficient based on nanocompression technique is proposed. It is found that the flexoelectricity can induce stiffness softening of dielectric nano-cone-frustum. This phenomenon becomes more significant when the sample size decreases or the half cone angle increases. This method avoids measuring the electric polarization or current at nanoscale with dynamical loading, which can be beneficial to the flexoelectric measurement at nanoscale and design of flexoelectric nanodevices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Phonon anharmonicity and negative thermal expansion in SnSe

The anharmonic phonon properties of SnSe in the Pnma phase were investigated with a combination of experiments and first-principles simulations. Using inelastic neutron scattering (INS) and nuclear resonant inelastic X-ray scattering (NRIXS), we have measured the phonon dispersions and density of states (DOS) and their temperature dependence, which revealed a strong, inhomogeneous shift and broadening of the spectrum on warming. First-principles simulations were performed to rationalize these measurements, and to explain the previously reported anisotropic thermal expansion, in particular the negative thermal expansion within the Sn-Se bilayers. Including the anisotropic strain dependence of the phonon free energy, in addition to the electronic ground state energy, is essential to reproduce the negative thermal expansion. From the phonon DOS obtained with INS and additional calorimetry measurements, we quantify the harmonic, dilational, and anharmonic components of the phonon entropy, heat capacity, and free energy. The origin of the anharmonic phonon thermodynamics is linked to the electronic structure.

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preprint2013arXiv

First-principles theory and calculation of flexoelectricity

We develop a general and unified first-principles theory of piezoelectric and flexoelectric tensor, formulated in such a way that the tensor elements can be computed directly in the context of density-functional calculations, including electronic and lattice contributions. We introduce a practical supercell-based methods for calculating the flexoelectric coefficients from first principles, and demonstrate them by computing the coefficients for a variety of cubic insulating materials, including C, Si, MgO, NaCl, CsCl, BaZrO3, BaTiO3, PbTiO3 and SrTiO3.

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preprint2012arXiv

Electrically driven octahedral rotations in SrTiO3 and PbTiO3

We investigate the oxygen octahedral rotations that occur in two perovskites, SrTiO3 and PbTiO3, as a function of applied three-dimensional electric displacement field, allowing us to map out the phase diagram of rotations in both the paraelectric and ferroelectric regions of the polar response. First-principles calculations at fixed electric displacement field are used to extract parameters of a Landau-Devonshire model that is analyzed to identify the phase boundaries between different rotational states. The calculations reveal a rich phase diagram of rotations versus applied field in both SrTiO3 and PbTiO3, although the details are quite different in the two cases.

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preprint2012arXiv

External uniform electric field removing flexoelectric effect in epitaxial ferroelectric thin films

Using the modified Landau-Ginsburg-Devonshire thermodynamic theory, it is found that the coupling between stress gradient and polarization, or flexoelectricity, has significant effect on ferroelectric properties of epitaxial thin films, such as polarization, free energy profile and hysteresis loop. However, this effect can be completely eliminated by applying an optimized external, uniform electric field. The role of such uniform electric field is shown to be the same as that of an ideal gradient electric field which can suppress the flexoelectricty effect completely based on the present theory. Since the uniform electric field is more convenient to apply and control than gradient electric field, it can be potentially used to remove the flexoelectric effect induced by stress gradient in epitaxial thin films and enhance the ferroelectric properties.

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preprint2012arXiv

Flexoelectricity induced increase of critical thickness in epitaxial ferroelectric thin films

Flexoelectricity describes the coupling between polarization and strain/stress gradients in insulating crystals. In this paper, using the Landau-Ginsburg-Devonshire phenomenological approach, we found that flexoelectricity could increase the theoretical critical thickness in epitaxial BaTiO3 thin films, below which the switchable spontaneous polarization vanishes. This increase is remarkable in tensile films while trivial in compressive films due to the electrostriction caused decrease of potential barrier, which can be easily destroyed by the flexoelectricity, between the ferroelectric state and the paraelectric state in tensile films. In addition, the films are still in a uni-polar state even below the critical thickness due to the flexoelectric effect.

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preprint2012arXiv

Spin-phonon coupling effects in transition-metal perovskites:a DFT+$U$ and hybrid-functional study

Spin-phonon coupling effects, as reflected in phonon frequency shifts between ferromagnetic (FM) and G-type antiferromagnetic (AFM) configurations in cubic CaMnO$_3$, SrMnO$_3$, BaMnO$_3$, LaCrO$_3$, LaFeO$_3$ and La$_2$(CrFe)O$_6$, are investigated using density-functional methods. The calculations are carried out both with a hybrid-functional (HSE) approach and with a DFT+$U$ approach using a $U$ that has been fitted to HSE calculations. The phonon frequency shifts obtained in going from the FM to the AFM spin configuration agree well with those computed directly from the more accurate HSE approach, but are obtained with much less computational effort. We find that in the $A$MnO$_3$ materials class with $A$=Ca, Sr, and Ba, this frequency shift decreases as the A cation radius increases for the $Γ$ phonons, while it increases for R-point phonons. In La$M$O$_3$ with $M$=Cr, Fe, and Cr/Fe, the phonon frequencies at $Γ$ decrease as the spin order changes from AFM to FM for LaCrO$_3$ and LaFeO$_3$, but they increase for the double perovskite La$_2$(CrFe)O$_6$. We discuss these results and the prospects for bulk and superlattice forms of these materials to be useful as multiferroics.

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preprint2011arXiv

First-principles theory of frozen-ion flexoelectricity

We demonstrate that the frozen-ion contribution to the flexoelectric coefficient is given solely in terms of the sum of third moments of the charge density distortions induced by atomic displacements, even for ferroelectric or piezoelectric materials. We introduce several practical supercell-based methods for calculating these coefficients from first principles, and demonstrate them by computing the coefficients for C, Si, MgO, NaCl, SrTiO$_3$, BaTiO$_3$, and PbTiO$_3$. Three important subtleties associated with pseudopotentials, the treatment of surfaces, and the calculation of transverse components are also discussed.

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preprint2011arXiv

Mapping the energy surface of PbTiO3 in multidimensional electric-displacement space

In recent years, methods have been developed that allow first-principles electronic-structure calculations to be carried out under conditions of fixed electric field. For some purposes, however, it is more convenient to work at fixed electric displacement field. Initial implementations of the fixed-displacement-field approach have been limited to constraining the field along one spatial dimension only. Here, we generalize this approach to treat the full three-dimensional displacement field as a constraint, and compute the internal-energy landscape as a function of this multidimensional displacement-field vector. Using PbTiO3 as a prototypical system, we identify stable or metastable tetragonal, orthorhombic and rhombohedral structures as the displacement field evolves along [001], [110] and [111] directions, respectively. The energy minimum along [001] is found to be deeper than that along [110] or [111], as expected for a system having a tetragonal ground state. The barriers connecting these minima are found to be quite small, consistent with the current understanding that the large piezoelectric effects in PbTiO3 arise from the easy rotation of the polarization vector.

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