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Xiaoqing Chen

Xiaoqing Chen contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2026arXiv

SAFE: Secure and Accurate Federated Learning for Privacy-Preserving Brain-Computer Interfaces

Electroencephalogram (EEG)-based brain-computer interfaces (BCIs) are widely adopted due to their efficiency and portability; however, their decoding algorithms still face multiple challenges, including inadequate generalization, adversarial vulnerability, and privacy leakage. This paper proposes Secure and Accurate FEderated learning (SAFE), a federated learning-based approach that protects user privacy by keeping data local during model training. SAFE employs local batch-specific normalization to mitigate cross-subject feature distribution shifts and hence improves model generalization. It further enhances adversarial robustness by introducing perturbations in both the input space and the parameter space through federated adversarial training and adversarial weight perturbation. Experiments on five EEG datasets from motor imagery (MI) and event-related potential (ERP) BCI paradigms demonstrated that SAFE consistently outperformed 14 state-of-the-art approaches in both decoding accuracy and adversarial robustness, while ensuring privacy protection. Notably, it even outperformed centralized training approaches that do not consider privacy protection at all. To our knowledge, SAFE is the first algorithm to simultaneously achieve high decoding accuracy, strong adversarial robustness, and reliable privacy protection without using any calibration data from the target subject, making it highly desirable for real-world BCIs.

preprint2022arXiv

Chip-integrated van der Waals PN heterojunction photodetector with low dark current and high responsivity

Two-dimensional materials are attractive for constructing high-performance photonic chip-integrated photodetectors because of their remarkable electronic and optical properties and dangling-bond-free surfaces. However, the reported chip-integrated two-dimensional material photodetectors were mainly implemented with the configuration of metal-semiconductor-metal, suffering from high dark currents and low responsivities at high operation speed. Here, we report a van der Waals PN heterojunction photodetector, composed of p-type black phosphorous and n-type molybdenum telluride, integrated on a silicon nitride waveguide. The built-in electric field of the PN heterojunction significantly suppresses the dark current and improves the responsivity. Under a bias of 1 V pointing from n-type molybdenum telluride to p-type black phosphorous, the dark current is lower than 7 nA, which is more than two orders of magnitude lower than those reported in other waveguide-integrated black phosphorus photodetectors. An intrinsic responsivity up to 577 mA/W is obtained. Remarkably, the van der Waals PN heterojunction is tunable by the electrostatic doping to further engineer its rectification and improve the photodetection, enabling an increased responsivity of 709 mA/W. Besides, the heterojunction photodetector exhibits a response bandwidth of ~1.0 GHz and a uniform photodetection over a wide spectral range, as experimentally measured from 1500 to 1630 nm. The demonstrated chip-integrated van der Waals PN heterojunction photodetector with low dark current, high responsivity and fast response has great potentials to develop high-performance on-chip photodetectors for various photonic integrated circuits based on silicon, lithium niobate, polymer, etc.

preprint2022arXiv

Electrically tunable second harmonic generation in atomically thin ReS2

Electrical tuning of second-order nonlinearity in optical materials is attractive to strengthen and expand the functionalities of nonlinear optical technologies, though its implementation remains elusive. Here, we report the electrically tunable second-order nonlinearity in atomically thin ReS2 flakes benefiting from their distorted 1T crystal structure and interlayer charge transfer. Enabled by the efficient electrostatic control of the few-atomic-layer ReS2, we show that second harmonic generation (SHG) can be induced in odd-number-layered ReS2 flakes which are centrosymmetric and thus without intrinsic SHG. Moreover, the SHG can be precisely modulated by the electric field, reversibly switching from almost zero to an amplitude more than one order of magnitude stronger than that of the monolayer MoS2. For the even-number-layered ReS2 flakes with the intrinsic SHG, the external electric field could be leveraged to enhance the SHG. We further perform the first-principles calculations which suggest that the modification of in-plane second-order hyperpolarizability by the redistributed interlayer-transferring charges in the distorted 1T crystal structure underlies the electrically tunable SHG in ReS2. With its active SHG tunability while using the facile electrostatic control, our work may further expand the nonlinear optoelectronic functions of two-dimensional materials for developing electrically controllable nonlinear optoelectronic devices.

preprint2020arXiv

Modelling of hydro-mechanical processes in heterogeneous fracture intersections using a fictitious domain method with variational transfer operators

Fluid flow in rough fractures and the coupling with the mechanical behaviour of the fractures pose great difficulties for numerical modeling approaches, due to complex fracture surface topographies, the non-linearity of hydromechanical processes and their tightly coupled nature. To this end, we have adapted a fictitious domain method to enable the simulation of hydromechanical processes in fracture-intersections. The main characteristic of the method is the immersion of the fracture, modelled as a linear elastic solid, in the surrounding computational fluid domain, modelled with the incompressible Navier Stokes equations. The fluid and the solid problems are coupled with variational transfer operators. Variational transfer operators are also used to solve contact within the fracture using a dual mortar approach and to generate problem specific fluid meshes. With respect to our applications, the key features of the method are the usage of different finite element discretizations for the solid and the fluid problem and the automatically generated representation of the fluid-solid boundary. We demonstrate that the presented methodology resolves small-scale roughness on the fracture surface, while capturing fluid flow field changes during mechanical loading. Starting with 2D/3D benchmark simulations of intersected fractures, we end with an intersected fracture composed of complex fracture surface topographies, which are in contact under increasing loads. The contributions of this article are: (1) the application of the fictitious domain method to study flow in fractures with intersections, (2) a mortar based contact solver for the solid problem, (3) generation of problem specific grids using the geometry information from the variational transfer operators.