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Xiaodong Xu

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preprint2026arXiv

Secure Semantic Communication With Homomorphic Encryption

In recent years, Semantic Communication (SemCom), which aims to achieve efficient and reliable transmission of meaning between agents, has garnered significant attention from both academia and industry. To ensure the security of communication systems, encryption techniques are employed to safeguard confidentiality and integrity. However, existing encryption schemes encounter obstacles when applied to SemCom. To address this issue, this paper explores the feasibility of applying homomorphic encryption (HE) to SemCom. Initially, we review the encryption algorithms utilized in mobile communication systems and analyze the challenges associated with their application to SemCom. Subsequently, we overview HE techniques and employ scale-invariant feature transform (SIFT) to demonstrate that the extractable semantic information can be preserved in homomorphic encrypted ciphertext. Based on this finding, we further propose the HE-joint source-channel coding (HE-JSCC) scheme, where the traditional JSCC model architecture is modified to support HE operations. Moreover, we present the simulation results for image classification and image generation tasks. Furthermore, we provide potential future research directions for homomorphic encrypted SemCom.

preprint2026arXiv

TDGCN-Based Mobile Multiuser Physical-Layer Authentication for EI-Enabled IIoT

Physical-Layer Authentication (PLA) offers endogenous security, lightweight implementation, and high reliability, making it a promising complement to upper-layer security methods in Edge Intelligence (EI)-empowered Industrial Internet of Things (IIoT). However, state-of-the-art Channel State Information (CSI)-based PLA schemes face challenges in recognizing mobile multi-users due to the constantly shifting CSI distributions with user movements. To address this issue, we propose a Temporal Dynamic Graph Convolutional Network (TDGCN)-based PLA scheme, which employs Graph Neural Networks (GNNs) to capture the spatio-temporal dynamics induced by user movements. Firstly, we partition CSI fingerprints into multivariate time series and utilize dynamic GNNs to capture their associations. Secondly, Temporal Convolutional Networks (TCNs) handle temporal dependencies within each CSI fingerprint dimension. Additionally, Dynamic Graph Isomorphism Networks (GINs) and cascade node clustering pooling further enable efficient information aggregation and reduced computational complexity. Simulations demonstrate the proposed scheme's superior authentication accuracy compared to seven baseline schemes.

preprint2023arXiv

Modeling and Performance Analysis of Single-Server Database Over Quasi-static Rayleigh Fading Channel

Cloud database is the key technology in cloud computing. The effective and efficient service quality of the cloud database is inseparable from communication technology, just as improving communication quality will reduce the concurrency phenomenon in the ticketing system. In order to visually observe the impact of communication on the cloud database, we propose a Communication-Database (C-D) Model with a single-server database over the quasi-static Rayleigh fading channel, which consists of three parts: CLIENTS SOURCE, COMMUNICATION SYSTEM and DATABASE SYSTEM. This paper uses the queuing model, M/G/1//K, to model the whole system. The C-D Model is analyzed in two cases: nonlinearity and linearity, which correspond to some instances of SISO and MIMO. The simulation results of average staying time, average number of transactions and other performance characteristics are basically consistent with the theoretical results, which verifies the validity of the C-D Model. The comparison of these experimental results also proves that poor communication quality does lead to the reduction in the quality of service.

preprint2023arXiv

Strain-programmable van der Waals magnetic tunnel junctions

The magnetic tunnel junction (MTJ) is a backbone device for spintronics. Realizing next generation energy efficient MTJs will require operating mechanisms beyond the standard means of applying magnetic fields or large electrical currents. Here, we demonstrate a new concept for programmable MTJ operation via strain control of the magnetic states of CrSBr, a layered antiferromagnetic semiconductor used as the tunnel barrier. Switching the CrSBr from antiferromagnetic to ferromagnetic order generates a giant tunneling magnetoresistance ratio without external magnetic field at temperatures up to ~ 140 K. When the static strain is set near the phase transition, applying small strain pulses leads to active flipping of layer magnetization with controlled layer number and thus magnetoresistance states. Further, finely adjusting the static strain to a critical value turns on stochastic switching between metastable states, with a strain-tunable sigmoidal response curve akin to the stochastic binary neuron. Our results highlight the potential of strain-programmable van der Waals MTJs towards spintronic applications, such as magnetic memory, random number generation, and probabilistic and neuromorphic computing.

preprint2022arXiv

1T-FeS$_2$$:$ a new type of two-dimensional metallic ferromagnet

Discovery of intrinsic two-dimensional (2D) magnetic materials is crucial for understanding the fundamentals of 2D magnetism and realizing next-generation magnetoelectronic and magneto-optical devices. Although significant efforts have been devoted to identifying 2D magnetism by exfoliating bulk magnetic layered materials, seldom studies are performed to synthesize ultra-thin magnetic materials directly for non-layered magnetic materials. Here, we report the successful synthesis of a new type of theoretically proposed 2D metallic ferromagnet 1T FeS2, through the molten-salt-assisted chemical vapor deposition (CVD) method. The long-range 2D ferromagnetic order is confirmed by the observation of a large anomalous Hall effect (AHE) and a hysteretic magnetoresistance. The experimentally detected out-of-plane ferromagnetic ordering is theoretically suported with Stoner criterion. Our findings open up new possibilities to search novel 2D ferromagnets in non-layered compounds and render opportunities for realizing realistic ultra-thin spintronic devices.

preprint2022arXiv

Atomically imprinted graphene plasmonic cavities

Plasmon polaritons in van der Waals (vdW) materials hold promise for next-generation photonics. The ability to deterministically imprint spatial patterns of high carrier density in cavities and circuitry with nanoscale features underlies future progress in nonlinear nanophotonics and strong light-matter interactions. Here, we demonstrate a general strategy to atomically imprint low-loss graphene plasmonic structures using oxidation-activated charge transfer (OCT). We cover graphene with a monolayer of WSe$_2$, which is subsequently oxidized into high work-function WOx to activate charge transfer. Nano-infrared imaging reveals low-loss plasmon polaritons at the WOx/graphene interface. We insert WSe$_2$ spacers to precisely control the OCT-induced carrier density and achieve a near-intrinsic quality factor of plasmons. Finally, we imprint canonical plasmonic cavities exhibiting laterally abrupt doping profiles with single-digit nanoscale precision via programmable OCT. Specifically, we demonstrate technologically appealing but elusive plasmonic whispering-gallery resonators based on free-standing graphene encapsulated in WOx. Our results open avenues for novel quantum photonic architectures incorporating two-dimensional materials.

preprint2022arXiv

Hexcitons and oxcitons in monolayer WSe$_2$

In the archetypal monolayer semiconductor WSe$_2$, the distinct ordering of spin-polarized valleys (low-energy pockets) in the conduction band allows for studies of not only simple neutral excitons and charged excitons (i.e., trions), but also more complex many-body states that are predicted at higher electron densities. We discuss magneto-optical measurements of electron-rich WSe$_2$ monolayers, and interpret the spectral lines that emerge at high electron doping as optical transitions of 6-body exciton states ("hexcitons") and 8-body exciton states ("oxcitons"). These many-body states emerge when a photoexcited electron-hole pair interacts simultaneously with multiple Fermi seas, each having distinguishable spin and valley quantum numbers. In addition, we identify the energies of primary and satellite optical transitions of hexcitons in the photoluminescence spectrum.

preprint2022arXiv

Imaging dynamic exciton interactions and coupling in transition metal dichalcogenides

Transition metal dichalcogenides (TMDs) are regarded as a possible materials platform for quantum information science and related device applications. In TMD monolayers, the dephasing time and inhomogeneity are crucial parameters for any quantum information application. In TMD heterostructures, coupling strength and interlayer exciton lifetimes are also parameters of interest. However, many demonstrations in TMDs can only be realized at specific spots on the sample, presenting a challenge to the scalability of these applications. Here, using multi-dimensional coherent imaging spectroscopy (MDCIS), we shed light on the underlying physics - including dephasing, inhomogeneity, and strain - for a MoSe$_2$ monolayer and identify both promising and unfavorable areas for quantum information applications. We furthermore apply the same technique to a MoSe$_2$/WSe$_2$ heterostructure. Despite the notable presence of strain and dielectric environment changes, coherent and incoherent coupling, as well as interlayer exciton lifetimes are mostly robust across the sample. This uniformity is despite a significantly inhomogeneous interlayer exciton photoluminescence distribution that suggests a bad sample for device applications. This robustness strengthens the case for TMDs as a next-generation materials platform in quantum information science and beyond.

preprint2022arXiv

Light-Induced Ferromagnetism in Moiré Superlattices

Many-body interactions between carriers lie at the heart of correlated physics. The ability to tune such interactions would open the possibility to access and control complex electronic phase diagrams on demand. Recently, moiré superlattices formed by two-dimensional materials have emerged as a promising platform for quantum engineering such phenomena. The power of the moiré system lies in the high tunability of its physical parameters by tweaking layer twist angle, electrical field, moiré carrier filling, and interlayer coupling. Here, we report that optical excitation can drastically tune the spin-spin interactions between moiré trapped carriers, resulting in ferromagnetic order in WS2/WSe2 moiré superlattices over a small range of doping at elevated temperatures. Near the filling factor v = -1/3 (i.e., one hole per three moiré unit cells), as the excitation power at the exciton resonance increases, a well-developed hysteresis loop emerges in the reflective magnetic circular dichroism (RMCD) signal as a function of magnetic field, a hallmark of ferromagnetism. The hysteresis loop persists down to charge neutrality, and its shape evolves as the moiré superlattice is gradually filled, indicating changes of magnetic ground state properties. The observed phenomenon points to a mechanism in which itinerant photo-excited excitons mediate exchange coupling between moiré trapped holes. This exciton-mediated interaction can be of longer range than direct coupling between moiré trapped holes, and thus magnetic order can arise even in the dilute hole regime under optical excitation. This discovery adds a new and dynamic tuning knob to the rich many-body Hamiltonian of moiré quantum matter.

preprint2022arXiv

Long-range transport of 2D excitons with acoustic waves

Excitons are elementary optical excitation in semiconductors. The ability to manipulate and transport these quasiparticles would enable excitonic circuits and devices for quantum photonic technologies. Recently, interlayer excitons in 2D semiconductors have emerged as a promising candidate for engineering excitonic devices due to their long lifetime, large exciton binding energy, and gate tunability. However, the charge-neutral nature of the excitons leads to weak response to the in-plane electric field and thus inhibits transport beyond the diffusion length. Here, we demonstrate the directional transport of interlayer excitons in bilayer WSe2 driven by the propagating potential traps induced by surface acoustic waves (SAW). We show that at 100 K, the SAW-driven excitonic transport is activated above a threshold acoustic power and reaches 20 mm, a distance at least ten times longer than the diffusion length and only limited by the device size. Temperature-dependent measurement reveals the transition from the diffusion-limited regime at low temperature to the acoustic field-driven regime at elevated temperature. Our work shows that acoustic waves are an effective, contact-free means to control exciton dynamics and transport, promising for realizing 2D materials-based excitonic devices such as exciton transistors, switches, and transducers up to room temperature.

preprint2022arXiv

Many-body exciton and inter-valley correlations in heavily electron-doped WSe$_2$ monolayers

In monolayer transition-metal dichalcogenide semiconductors, many-body correlations can manifest in optical spectra when photoexcited electron-hole pairs (excitons) are introduced into a 2D Fermi sea of mobile carriers. At low carrier densities, the formation of positively and negatively charged excitons ($X^\pm$) is well documented. However, in WSe$_2$ monolayers, an additional absorption resonance, often called $X^{-\prime}$, emerges at high electron density. Its origin is not understood. Here we investigate the $X^{-\prime}$ state via polarized absorption spectroscopy of electrostatically-gated WSe$_2$ monolayers in high magnetic fields to 60~T. Field-induced filling and emptying of the lowest optically-active Landau level in the $K'$ valley causes repeated quenching of the corresponding optical absorption. Surprisingly, however, these quenchings are accompanied by absorption changes to higher-lying Landau levels in both $K'$ and $K$ valleys, which are unoccupied. These results cannot be reconciled within a single-particle picture, and demonstrate the many-body nature and inter-valley correlations of the $X^{-\prime}$ quasiparticle state.

preprint2022arXiv

The Impact of Inelastic Collisions with Hydrogen on NLTE Copper Abundances in Metal-Poor Stars

We investigate the non-local thermodynamic equilibrium (NLTE) analysis for \ion{Cu}{1} lines with the updated model atom that includes quantum-mechanical rate coefficients of Cu\,$+$\,H and Cu$^+$\,$+$\,H$^-$ inelastic collisions from the recent study of Belyaev et al. (2021). The influence of these data on NLTE abundance determinations has been performed for six metal-poor stars in a metallicity range of $-$2.59\,dex$\,\le$\,[Fe/H]\,$\le$\,$-$0.95\,dex. For \ion{Cu}{1} lines, the application of accurate atomic data leads to a decrease in the departure from LTE and lower copper abundances compared to that obtained with the Drawin's theoretical approximation. To verify our adopted copper atomic model, we also derived the LTE copper abundances of \ion{Cu}{2} lines for the sample stars. A consistent copper abundance from the \ion{Cu}{1} (NLTE) and \ion{Cu}{2} (LTE) lines has been obtained, which indicates the reliability of our copper atomic model. It is noted that the [Cu/Fe] ratios increase with increasing metallicity when $\sim$\,$-$2.0\,dex\,$<$\,[Fe/H]\,$<$\,$\sim$\,$-$1.0\,dex, favoring a secondary (metallicity-dependent) copper production.

preprint2021arXiv

Coherent exciton-exciton interactions and exciton dynamics in a MoSe\textsubscript{2}/WSe\textsubscript{2} heterostructure

Coherent coupling between excitons is at the heart of many-body interactions with transition metal dichalcogenide (TMD) heterostructures as an emergent platform for the investigation of these interactions. We employ multi-dimensional coherent spectroscopy on monolayer MoSe\textsubscript{2}/WSe\textsubscript{2} heterostructures and observe coherent coupling between excitons spatially localized in monolayer MoSe$_2$ and WSe$_2$. Through many-body spectroscopy, we further observe the absorption state arising from free interlayer electron-hole pairs. This observation yields a spectroscopic measurement of the interlayer exciton binding energy of about 250 meV.

preprint2021arXiv

Defect-Induced Magnetic Skyrmion in Two-Dimensional Chromium Tri-Iodide Monolayer

Chromium iodide monolayers, which have different magnetic properties in comparison to the bulk chromium iodide, have been shown to form skyrmionic states in applied electromagnetic fields or in Janus-layer devices. In this work, we demonstrate that spin-canted solutions can be induced into monolayer chromium iodide by select substitution of iodide atoms with isovalent impurities. Several concentrations and spatial configurations of halide substitutional defects are selected to probe the coupling between the local defect-induced geometric distortions and orientation of chromium magnetic moments. This work provides atomic-level insight into how atomically precise strain-engineering can be used to create and control complex magnetic patterns in chromium iodide layers and lays out the foundation for investigating the field- and geometric-dependent magnetic properties in similar two-dimensional materials.

preprint2021arXiv

Electric control of a canted-antiferromagnetic Chern insulator

The interplay between band topology and magnetism can give rise to exotic states of matter. For example, magnetically doped topological insulators can realize a Chern insulator that exhibits quantized Hall resistance at zero magnetic field. While prior works have focused on ferromagnetic systems, little is known about band topology and its manipulation in antiferromagnets. Here, we report that MnBi$_2$Te$_4$ is a rare platform for realizing a canted-antiferromagnetic (cAFM) Chern insulator with electrical control. We show that the Chern insulator state with Chern number $C = 1$ appears as soon as the AFM to canted-AFM phase transition happens. The Chern insulator state is further confirmed by observing the unusual transition of the $C = 1$ state in the cAFM phase to the $C = 2$ orbital quantum Hall states in the magnetic field induced ferromagnetic phase. Near the cAFM-AFM phase boundary, we show that the Chern number can be toggled on and off by applying an electric field alone. We attribute this switching effect to the electrical field tuning of the exchange gap alignment between the top and bottom surfaces. Our work paves the way for future studies on topological cAFM spintronics and facilitates the development of proof-of-concept Chern insulator devices.

preprint2021arXiv

Evidence for equilibrium excitons and exciton condensation in monolayer WTe2

A single monolayer of the layered semimetal WTe2 behaves as a two-dimensional topological insulator, with helical conducting edge modes surrounding a bulk state that becomes insulating at low temperatures. Here we present evidence that the bulk state has a very unusual nature, containing electrons and holes bound by Coulomb attraction (excitons) that spontaneously form in thermal equilibrium. On cooling from room temperature to 100 K the conductivity develops a V-shaped dependence on electrostatic doping, while the chemical potential develops a ~43 meV step at the neutral point. These features are much sharper than is possible in an independent-electron picture, but they can be largely accounted for by positing that some of the electrons and holes are paired in equilibrium. Our calculations from first principles show that the exciton binding energy is larger than 100 meV and the radius as small as 4 nm, explaining their formation at high temperature and doping levels. Below 100 K more strongly insulating behavior is seen, suggesting that a charge-ordered state forms. The observed absence of charge density waves in this state appears surprising within an excitonic insulator picture, but we show that it can be explained by the symmetries of the exciton wave function. Monolayer WTe2 therefore presents an exceptional combination of topological properties and strong correlations over a wide temperature range.

preprint2021arXiv

Unraveling intrinsic flexoelectricity in twisted double bilayer graphene

Moiré superlattices of two-dimensional (2D) materials with a small twist angle are thought to exhibit appreciable flexoelectric effect, though unambiguous confirmation of their flexoelectricity is challenging due to artifacts associated with commonly used piezoresponse force microscopy (PFM). For example, unexpectedly small phase contrast ($\sim$$8^{\circ}$) between opposite flexoelectric polarizations was reported in twisted bilayer graphene (tBG), though theoretically predicted value is $180^{\circ}$. Here we developed a methodology to extract intrinsic moiré flexoelectricity using twisted double bilayer graphene (tDBG) as a model system, probed by lateral PFM. For small twist angle samples, we found that a vectorial decomposition is essential to recover the small intrinsic flexoelectric response at domain walls from a large background signal. The obtained three-fold symmetry of commensurate domains with significant flexoelectric response at domain walls is fully consistent with our theoretical calculations. Incommensurate domains in tDBG with relatively large twist angles can also be observed by this technique. Our work provides a general strategy for unraveling intrinsic flexoelectricity in van der Waals moiré superlattices while providing insights into engineered symmetry breaking in centrosymmetric materials.

preprint2020arXiv

2D van der Waals Nanoplatelets with Robust Ferromagnetism

We have synthesized unique colloidal nanoplatelets of the ferromagnetic two-dimensional (2D) van der Waals material CrI3 and have characterized these nanoplatelets structurally, magnetically, and by magnetic circular dichroism spectroscopy. The isolated CrI3 nanoplatelets have lateral dimensions of ~25 nm and ensemble thicknesses of only ~4 nm, corresponding to just a few CrI3 monolayers. Magnetic and magneto-optical measurements demonstrate robust 2D ferromagnetic ordering in these nanoplatelets with Curie temperatures similar to those observed in bulk CrI3, despite the strong spatial confinement. These data also show magnetization steps akin to those observed in micron-sized few-layer 2D sheets and associated with concerted spin-reversal of individual CrI3 layers within few-layer van der Waals stacks. Similar data have also been obtained for CrBr3 and anion-alloyed Cr(I1-xBrx)3 nanoplatelets. These results represent the first example of laterally confined 2D van der Waals ferromagnets of any composition. The demonstration of robust ferromagnetism at nanometer lateral dimensions opens new doors for miniaturization in spintronics devices based on van der Waals ferromagnets.

preprint2020arXiv

All-angle Negative Reflection with An Ultrathin Acoustic Gradient Metasurface: Floquet-Bloch Modes Perspective and Experimental Verification

Metasurface with gradient phase response offers new alternative for steering the propagation of waves. Conventional Snell's law has been revised by taking the contribution of local phase gradient into account. However, the requirement of momentum matching along the metasurface sets its nontrivial beam manipulation functionality within a limited-angle incidence. In this work, we theoretically and experimentally demonstrate that the acoustic gradient metasurface supports the negative reflection for all-angle incidence. The mode expansion theory is developed to help understand how the gradient metasurface tailors the incident beams, and the all-angle negative reflection occurs when the first negative order Floquet-Bloch mode dominates inside the metasurface slab. The coiling-up space structures are utilized to build desired acoustic gradient metasurface, and the all-angle negative reflections have been perfectly verified by experimental measurements. Our work offers the Floquet-Bloch modes perspective for qualitatively understanding the reflection behaviors of the acoustic gradient metasurface, and the all-angle negative reflection characteristic possessed by acoustic gradient metasurface could enable a new degree of the acoustic wave manipulating and be applied in the functional diffractive acoustic elements, such as the all-angle acoustic back reflector.

preprint2020arXiv

Direct observation of 2D magnons in atomically thin CrI$_3$

Exfoliated chromium triiodide (CrI$_3$) is a layered van der Waals (vdW) magnetic insulator that consists of ferromagnetic layers coupled through antiferromagnetic interlayer exchange. The resulting permutations of magnetic configurations combined with the underlying crystal symmetry produces tunable magneto-optical phenomena that is unique to the two-dimensional (2D) limit. Here, we report the direct observation of 2D magnons through magneto-Raman spectroscopy with optical selection rules that are strictly determined by the honeycomb lattice and magnetic states of atomically thin CrI$_3$. In monolayers, we observe an acoustic magnon mode of ~0.3 meV with cross-circularly polarized selection rules locked to the magnetization direction. These unique selection rules arise from the discrete conservation of angular momentum of photons and magnons dictated by threefold rotational symmetry in a rotational analogue to Umklapp scattering. In bilayers, by tuning between the layered antiferromagnetic and ferromagnetic-like states, we observe the switching of two magnon modes. The bilayer structure also enables Raman activity from the optical magnon mode at ~17 meV (~4.2 THz) that is otherwise Raman-silent in the monolayer. From these measurements, we quantitatively extract the spin wave gap, magnetic anisotropy, intralayer and interlayer exchange constants, and establish 2D magnets as a new system for exploring magnon physics.

preprint2020arXiv

Direct Observation of Intravalley Phonon Scattering of 2s Excitons in MoSe$_2$ and WSe$_2$ Monolayers

We present a high-resolution resonance Raman study of hBN encapsulated MoSe$_2$ and WSe$_2$ monolayers at 4 K using excitation energies from 1.6 eV to 2.25 eV. We report resonances with the WSe$_2$ A2s and MoSe$_2$ A2s and B2s excited Rydberg states despite their low oscillator strength. When resonant with the 2s states we identify new Raman peaks which are associated with intravalley scattering between different Rydberg states via optical phonons. By calibrating the Raman scattering efficiency and separately constraining the electric dipole matrix elements, we reveal that the scattering rates for k=0 optical phonons are comparable for both 1s and 2s states despite differences in the envelope functions. We also observe multiple new dispersive Raman peaks including a peak at the WSe$_2$ A2s resonance that demonstrates non-linear dispersion and peak-splitting behavior that suggests that the dispersion relations for dark excitonic states at energies near the 2s state are extremely complex.

preprint2020arXiv

Experimental realisation of Dual Periodicity Moiré Superlattice in a MoSe$_2$/WSe$_2$ Heterobilayer

Moiré structures in van der Waals heterostructures lead to emergent phenomena including superconductivity in twisted bilayer graphene and optically accessible strongly-correlated electron states in transition metal dichalcogenide heterobilayers. Dual periodicity moiré structures (DPMS) formed in layered structures with more than two layers have been shown to lead to ferromagnetism and multiple secondary Dirac points in TBG. Whilst in principle it is possible to obtain DPMS in bilayers there has not been clear experimental evidence of this yet. In this paper we present signatures of DPMS in a twisted MoSe$_2$/WSe$_2$ bilayer revealed by resonance Raman spectroscopy. We observed zone-folded acoustic and optical phonon modes with a wavevector twice of the moiré wavevector, evidence of a dual periodicity moiré heterostructure. These results simultaneously open up opportunities for new emergent phenomena and an optical method for characterising DPMS in a wide range of van der Waals heterostructures.

preprint2020arXiv

LAMOST/HRS Spectroscopic Analysis of Two New Li-rich Giants

Two Li-rich candidates, TYC 1338-1410-1 and TYC 2825-596-1, were observed with the new high-resolution echelle spectrograph, LAMOST/HRS. Based on the high-resolution and high-signal-to-noise ratio (SNR) spectra, we derived stellar parameters and abundances of 14 important elements for the two candidates. The stellar parameters and lithium abundances indicate that they are Li-rich K-type giants, and they have A(Li)$_\mathrm{NLTE}$ of 1.77 and 2.91 dex, respectively. Our analysis suggests that TYC 1338-1410-1 is likely a red giant branch (RGB) star at the bump stage, while TYC 2825-596-1 is most likely a core helium-burning red clump (RC) star. The line profiles of both spectra indicate that the two Li-rich giants are slow rotators and do not show infrared (IR) excess. We conclude that engulfment is not the lithium enrichment mechanism for either star. The enriched lithium of TYC 1338-1410-1 could be created via Cameron-Fowler mechanism, while the lithium excess in TYC 2825-596-1 could be associated with either non-canonical mixing processes or He-flash.

preprint2020arXiv

Layer-Resolved Magnetic Proximity Effect in van der Waals Heterostructures

Magnetic proximity effects are crucial ingredients for engineering spintronic, superconducting, and topological phenomena in heterostructures. Such effects are highly sensitive to the interfacial electronic properties, such as electron wave function overlap and band alignment. The recent emergence of van der Waals (vdW) magnets enables the possibility of tuning proximity effects via designing heterostructures with atomically clean interfaces. In particular, atomically thin CrI3 exhibits layered antiferromagnetism, where adjacent ferromagnetic monolayers are antiferromagnetically coupled. Exploiting this magnetic structure, we uncovered a layer-resolved magnetic proximity effect in heterostructures formed by monolayer WSe2 and bi/trilayer CrI3. By controlling the individual layer magnetization in CrI3 with a magnetic field, we found that the spin-dependent charge transfer between WSe2 and CrI3 is dominated by the interfacial CrI3 layer, while the proximity exchange field is highly sensitive to the layered magnetic structure as a whole. These properties enabled us to use monolayer WSe2 as a spatially sensitive magnetic sensor to map out layered antiferromagnetic domain structures at zero magnetic field as well as antiferromagnetic/ferromagnetic domains near the spin-flip transition in bilayer CrI3. Our work reveals a new way to control proximity effects and probe interfacial magnetic order via vdW engineering.

preprint2020arXiv

Magnetic proximity and nonreciprocal current switching in a monolayer WTe2 helical edge

The integration of diverse electronic phenomena, such as magnetism and nontrivial topology, into a single system is normally studied either by seeking materials that contain both ingredients, or by layered growth of contrasting materials. The ability to simply stack very different two dimensional (2D) van der Waals materials in intimate contact permits a different approach. Here we use this approach to couple the helical edges states in a 2D topological insulator, monolayer WTe2, to a 2D layered antiferromagnet, CrI3. We find that the edge conductance is sensitive to the magnetization state of the CrI3, and the coupling can be understood in terms of an exchange field from the nearest and next-nearest CrI3 layers that produces a gap in the helical edge. We also find that the nonlinear edge conductance depends on the magnetization of the nearest CrI3 layer relative to the current direction. At low temperatures this produces an extraordinarily large nonreciprocal current that is switched by changing the antiferromagnetic state of the CrI3.

preprint2020arXiv

Metasurface Integrated Monolayer Exciton Polariton

Monolayer transition metal dichalcogenides (TMDs) are the first truly two-dimensional (2D) semiconductor, providing an excellent platform to investigate light-matter interaction in the 2D limit. Apart from fundamental scientific exploration, this material system has attracted active research interest in the nanophotonic devices community for its unique optoelectronic properties. The inherently strong excitonic response in monolayer TMDs can be further enhanced by exploiting the temporal confinement of light in nanophotonic structures. Dielectric metasurfaces are one such two-dimensional nanophotonic structures, which have recently demonstrated strong potential to not only miniaturize existing optical components, but also to create completely new class of designer optics. Going beyond passive optical elements, researchers are now exploring active metasurfaces using emerging materials and the utility of metasurfaces to enhance the light-matter interaction. Here, we demonstrate a 2D exciton-polariton system by strongly coupling atomically thin tungsten diselenide (WSe2) monolayer to a silicon nitride (SiN) metasurface. Via energy-momentum spectroscopy of the WSe2-metasurface system, we observed the characteristic anti-crossing of the polariton dispersion both in the reflection and photoluminescence spectrum. A Rabi splitting of 18 meV was observed which matched well with our numerical simulation. The diffraction effects of the nano-patterned metasurface also resulted in a highly directional polariton emission. Finally, we showed that the Rabi splitting, the polariton dispersion and the far-field emission pattern could be tailored with subwavelength-scale engineering of the optical meta-atoms. Our platform thus opens the door for the future development of novel, exotic exciton-polariton devices by advanced meta-optical engineering.

preprint2020arXiv

Monolayer Semiconductor Auger Detector

Auger recombination in semiconductors is a many-body phenomenon in which recombination of electrons and holes is accompanied by excitation of other charge carriers. Being nonradiative, it is detrimental to light emission. The excess energy of the excited carriers is normally rapidly converted to heat, making Auger processes difficult to probe directly. Here, we employ a technique in which the Auger-excited carriers are detected by their ability to tunnel out of the semiconductor through a thin barrier, generating a current. We employ vertical van der Waals (vdW) heterostructures with monolayer WSe2 as the semiconductor and the wide band gap hexagonal boron nitride (hBN) as the tunnel barrier to preferentially transmit high-energy Auger-excited carriers to a graphite electrode. The unambiguous signatures of Auger processes are a rise in the photocurrent when excitons are created by resonant excitation, and negative differential photoconductance resulting from the shifts of the exciton resonances with voltage. We detect holes Auger-excited by both neutral and charged excitons, and find that the Auger scattering is surprisingly strong under weak excitation. The selective extraction of Auger carriers at low, controlled carrier densities that is enabled by vdW heterostructures illustrates an important addition to the techniques available for probing relaxation processes in 2D materials.

preprint2020arXiv

One-Dimensional Moiré Excitons in Transition-Metal Dichalcogenide Heterobilayers

The formation of interfacial moiré patterns from angular and/or lattice mismatch has become a powerful approach to engineer a range of quantum phenomena in van der Waals heterostructures. For long-lived and valley-polarized interlayer excitons in transition-metal dichalcogenide (TMDC) heterobilayers, signatures of quantum confinement by the moiré landscape have been reported in recent experimental studies. Such moiré confinement has offered the exciting possibility to tailor new excitonic systems, such as ordered arrays of zero-dimensional (0D) quantum emitters and their coupling into topological superlattices. A remarkable nature of the moiré potential is its dramatic response to strain, where a small uniaxial strain can tune the array of quantum-dot-like 0D traps into parallel stripes of one-dimensional (1D) quantum wires. Here, we present direct evidence for the 1D moiré potentials from real space imaging and the corresponding 1D moiré excitons from photoluminescence (PL) emission in MoSe2/WSe2 heterobilayers. Whereas the 0D moiré excitons display quantum emitter-like sharp PL peaks with circular polarization, the PL emission from 1D moiré excitons has linear polarization and two orders of magnitude higher intensity. The results presented here establish strain engineering as a powerful new method to tailor moiré potentials as well as their optical and electronic responses on demand.

preprint2020arXiv

Stacking Domain Wall Magnons in Twisted van der Waals Magnets

Using bilayer CrI$_3$ as an example, we demonstrate that stacking domain walls in van der Waals magnets can host one dimensional (1D) magnon channels, which have lower energies than bulk magnons. Interestingly, some magnon channels are hidden in magnetically homogeneous background and can only be inferred with the knowledge of stacking domain walls. Compared to 1D magnons confined in magnetic domain walls, 1D magnons in stacking domain walls are more stable against external perturbations. We show that the relaxed moiré superlattices of small-angle twisted bilayer CrI$_3$ is a natural realization of stacking domain walls and host interconnected moiré magnon network. Our work reveals the importance of stacking domain walls in understanding magnetic properties of van der Waals magnets, and extends the scope of stacking engineering to magnetic dynamics.

preprint2020arXiv

Superconductivity without insulating states in twisted bilayer graphene stabilized by monolayer WSe$_2$

Magic-angle twisted bilayer graphene (TBG), with rotational misalignment close to 1.1$^\circ$, features isolated flat electronic bands that host a rich phase diagram of correlated insulating, superconducting, ferromagnetic, and topological phases. The origins of the correlated insulators and superconductivity, and the interplay between them, are particularly elusive. Both states have been previously observed only for angles within $\pm0.1^\circ$ from the magic-angle value and occur in adjacent or overlapping electron density ranges; nevertheless, it is still unclear how the two states are related. Beyond the twist angle and strain, the dependence of the TBG phase diagram on the alignment and thickness of insulating hexagonal boron nitride (hBN) used to encapsulate the graphene sheets indicates the importance of the microscopic dielectric environment. Here we show that adding an insulating tungsten-diselenide (WSe$_2$) monolayer between hBN and TBG stabilizes superconductivity at twist angles much smaller than the established magic-angle value. For the smallest angle of $θ$ = 0.79$^\circ$, we still observe clear superconducting signatures, despite the complete absence of the correlated insulating states and vanishing gaps between the dispersive and flat bands. These observations demonstrate that, even though electron correlations may be important, superconductivity in TBG can exist even when TBG exhibits metallic behaviour across the whole range of electron density. Finite-magnetic-field measurements further reveal breaking of the four-fold spin-valley symmetry in the system, consistent with large spin-orbit coupling induced in TBG via proximity to WSe$_2$. Our results highlight the importance of symmetry breaking effects in stabilizing electronic states in TBG and open new avenues for engineering quantum phases in moiré systems.

preprint2020arXiv

Superposition of intra- and inter-layer excitons in twistronic MoSe$_2$/WSe$_2$ bilayers probed by resonant Raman scattering

Hybridisation of electronic bands of two-dimensional materials, assembled into twistronic heterostructures, enables one to tune their optoelectronic properties by selecting conditions for resonant interlayer hybridisation. Resonant interlayer hybridisation qualitatively modifies the excitons in such heterostructures, transforming these optically active modes into superposition states of interlayer and intralayer excitons. For MoSe$_2$/WSe$_2$ heterostructures, strong hybridization occurs between the holes in the spin-split valence band of WSe$_2$ and in the top valence band of MoSe$_2$, especially when both are bound to the same electron in the lowest conduction band of WSe$_2$. Here we use resonance Raman scattering to provide direct evidence for the hybridisation of excitons in twistronic MoSe$_2$/WSe$_2$ structures, by observing scattering of specific excitons by phonons in both WSe$_2$ and MoSe$_2$. We also demonstrate that resonance Raman scattering spectroscopy opens up a wide range of possibilities for quantifying the layer composition of the superposition states of the exciton and the interlayer hybridisation parameters in heterostructures of two-dimensional materials.

preprint2020arXiv

Tunable correlation-driven symmetry breaking in twisted double bilayer graphene

A variety of correlated phases have recently emerged in select twisted van der Waals (vdW) heterostructures owing to their flat electronic dispersions. In particular, heterostructures of twisted double bilayer graphene (tDBG) manifest electric field-tunable correlated insulating (CI) states at all quarter fillings of the conduction band, accompanied by nearby states featuring signatures suggestive of superconductivity. Here, we report electrical transport measurements of tDBG in which we elucidate the fundamental role of spontaneous symmetry breaking within its correlated phase diagram. We observe abrupt resistivity drops upon lowering the temperature in the correlated metallic phases neighboring the CI states, along with associated nonlinear $I$-$V$ characteristics. Despite qualitative similarities to superconductivity, concomitant reversals in the sign of the Hall coefficient instead point to spontaneous symmetry breaking as the origin of the abrupt resistivity drops, while Joule heating appears to underlie the nonlinear transport. Our results suggest that similar mechanisms are likely relevant across a broader class of semiconducting flat band vdW heterostructures.

preprint2020arXiv

Valley Phonons and Exciton Complexes in a Monolayer Semiconductor

The coupling between spin, charge, and lattice degrees of freedom plays an important role in a wide range of fundamental phenomena. Monolayer semiconducting transitional metal dichalcogenides have emerged as an outstanding platform for studying these coupling effects because they possess unique spin-valley locking physics for hosting rich excitonic species and the reduced screening for strong Coulomb interactions. Here, we report the observation of multiple valley phonons, phonons with momentum vectors pointing to the corners of the hexagonal Brillouin zone, and the resulting exciton complexes in the monolayer semiconductor WSe2. From Lande g-factor and polarization analyses of photoluminescence peaks, we find that these valley phonons lead to efficient intervalley scattering of quasi particles in both exciton formation and relaxation. This leads to a series of photoluminescence peaks as valley phonon replicas of dark trions. Using identified valley phonons, we also uncovered an intervalley exciton near charge neutrality, and extract its short-range electron-hole exchange interaction to be about 10 meV. Our work not only identifies a number of previously unknown 2D excitonic species, but also shows that monolayer WSe2 is a prime candidate for studying interactions between spin, pseudospin, and zone-edge phonons.

preprint2019arXiv

Tuning Inelastic Light Scattering via Symmetry Control in 2D Magnet CrI$_3$

The coupling between spin and charge degrees of freedom in a crystal imparts strong optical signatures on scattered electromagnetic waves. This has led to magneto-optical effects with a host of applications, from the sensitive detection of local magnetic order to optical modulation and data storage technologies. Here, we demonstrate a new magneto-optical effect, namely, the tuning of inelastically scattered light through symmetry control in atomically thin chromium triiodide (CrI$_3$). In monolayers, we found an extraordinarily large magneto-optical Raman effect from an A$_{1g}$ phonon mode due to the emergence of ferromagnetic order. The linearly polarized, inelastically scattered light rotates by ~40$^o$, more than two orders of magnitude larger than the rotation from MOKE under the same experimental conditions. In CrI$_3$ bilayers, we show that the same A$_{1g}$ phonon mode becomes Davydov-split into two modes of opposite parity, exhibiting divergent selection rules that depend on inversion symmetry and the underlying magnetic order. By switching between the antiferromagnetic states and the fully spin-polarized states with applied magnetic and electric fields, we demonstrate the magnetoelectrical control over their selection rules. Our work underscores the unique opportunities provided by 2D magnets for controlling the combined time-reversal and inversion symmetries to manipulate Raman optical selection rules and for exploring emergent magneto-optical effects and spin-phonon coupled physics.

preprint2016arXiv

Band parameters and hybridization in 2D semiconductor heterostructures from photoemission spectroscopy

Combining monolayers of different two-dimensional (2D) semiconductors into heterostructures opens up a wealth of possibilities for novel electronic and optical functionalities. Exploiting them hinges on accurate measurements of the band parameters and orbital hybridization in separate and stacked monolayers, many of which are only available as small samples. The recently introduced technique of angle-resolved photoemission spectroscopy with submicron spatial resolution (μ-ARPES) offers the capability to measure small samples, but the energy resolution obtained for such exfoliated samples to date (~0.5 eV) has been inadequate. Here, we show that by suitable heterostructure sample design the full potential of μ-ARPES can be realized. We focus on MoSe2/WSe2 van der Waals heterostructures, which are 2D analogs of 3D semiconductor heterostructures. We find that in a MoSe2/WSe2 heterobilayer the bands in the K valleys are weakly hybridized, with the conduction and valence band edges originating in the MoSe2 and WSe2 respectively. There is stronger hybridization at the Γ point, but the valence band edge remains at the K points. This is consistent with the recent observation of interlayer excitons where the electron and hole are valley polarized but in opposite layers. We determine the valence band offset to be 300 meV, which combined with photoluminescence measurements implies that the binding energy of interlayer excitons is at least 200 meV, comparable with that of intralayer excitons.

preprint2016arXiv

Directional Interlayer Spin-Valley Transfer in Two-Dimensional Heterostructures

Van der Waals heterostructures formed by two different monolayer semiconductors have emerged as a promising platform for new optoelectronic and spin/valleytronic applications. In addition to its atomically thin nature, a two-dimensional semiconductor heterostructure is distinct from its three-dimensional counterparts due to the unique coupled spin-valley physics of its constituent monolayers. Here, we report the direct observation that an optically generated spin-valley polarization in one monolayer can be transferred between layers of a two-dimensional MoSe2-WSe2 heterostructure. Using nondegenerate optical circular dichroism spectroscopy, we show that charge transfer between two monolayers conserves spin-valley polarization and is only weakly dependent on the twist angle between layers. Our work points to a new spin-valley pumping scheme in nanoscale devices, provides a fundamental understanding of spin-valley transfer across the two-dimensional interface, and shows the potential use of two-dimensional semiconductors as a spin-valley generator in 2D spin/valleytronic devices for storing and processing information.

preprint2016arXiv

Dynamical analysis of modified gravity with nonminimal gravitational coupling to matter

We perform a phase space analysis of a generalized modified gravity theory with nonminimally coupling between geometry and matter. We apply the dynamical system approach to this generalized model and find that in the cosmological context, different choices of Lagrangian density will apparently result in different phases of the Universe. By carefully choosing the variables, we prove that there is an attractor solution to describe the late time accelerating universe when the modified gravity is chosen in a simple power-law form of the curvature scalar. We further examine the temperature evolution based on the thermodynamic understanding of the model. Confronting the model with supernova type Ia data sets, we find that the nonminimally coupled theory of gravity is a viable model to describe the late time Universe acceleration.

preprint2016arXiv

Exciton Dynamics in Monolayer Transition Metal Dichalcogenides

Since the discovery of semiconducting monolayer transition metal dichalcogenides, a variety of experimental and theoretical studies have been carried out seeking to understand the intrinsic exciton population decay and valley relaxation dynamics. Reports of the exciton decay time range from hundreds of femtoseconds to ten nanoseconds, while the valley depolarization time can exceed one nanosecond. At present, however, a consensus on the microscopic mechanisms governing exciton radiative and non-radiative recombination is lacking. The strong exciton oscillator strength resulting in up to 20% absorption for a single monolayer points to ultrafast radiative recombination. However, the low quantum yield and large variance in the reported lifetimes suggest that non-radiative Auger-type processes obscure the intrinsic exciton radiative lifetime. In either case, the electron-hole exchange interaction plays an important role in the exciton spin and valley dynamics. In this article, we review the experiments and theory that have led to these conclusions and comment on future experiments that could complement our current understanding.

preprint2016arXiv

Expansion of a Valley-Polarized Exciton Cloud in a 2D Heterostructure

Heterostructures comprising different monolayer semiconductors provide a new system for fundamental science and device technologies, such as in the emerging field of valleytronics. Here, we realize valley-specific interlayer excitons in monolayer WSe2-MoSe2 vertical heterostructures. We create interlayer exciton spin-valley polarization by circularly polarized optical pumping and determine a valley lifetime of 40 nanoseconds. This long-lived polarization enables the visualization of the expansion of a valley-polarized exciton cloud over several microns. The spatial pattern of the polarization evolves into a ring with increasing exciton density, a manifestation of valley exciton exchange interactions. Our work lays a foundation for quantum optoelectronics and valleytronics based on interlayer excitons in van der Waals heterostructures.

preprint2016arXiv

Finite-dimensional output feedback regulator for a mono-tubular heatexchanger process

In this work, we consider the output tracking and disturbance rejection problems of a mono-tubular heat exchanger process and a novel finite-dimensional output feedback regulator is developed. In the proposed output feedback regulator design, measurements available for the regulator do not belong to the set of controlled outputs. In other words, design emphasizes that other than controlled output is used as input signal to the regulator. The proposed output feedback regulator with only plant measurement ym(t) can realize the exosystem state estimation, disturbance rejection and reference signal tracking, simultaneously. Finally, the results are demonstrated by a mono-tubular heat exchanger process with specific parameters via the computer simulation.

preprint2016arXiv

Hybrid tip-enhanced nano-spectroscopy and -imaging of monolayer WSe2 with local strain control

Many classes of two-dimensional (2D) materials have emerged as potential platforms for novel electronic and optical devices. However, the physical properties are strongly influenced by nanoscale heterogeneities in the form of edges, grain boundaries, and nucleation sites. Using combined tip-enhanced Raman scattering (TERS) and photoluminescence (TEPL) nano-spectroscopy and -imaging, we study the associated effects on the excitonic properties in monolayer WSe2 grown by physical vapor deposition (PVD). With <15 nm spatial resolution we resolve nonlocal nanoscale correlations of PL spectral intensity and shifts with crystal edges and internal twin boundaries associated with the expected exciton diffusion length. Through an active atomic force tip interaction we can control the crystal strain on the nanoscale, and tune the local bandgap in reversible (up to 24 meV shift) and irreversible (up to 48 meV shift) fashion. This allows us to distinguish the effect of strain from the dominant influence of defects on the PL modification at the different structural heterogeneities. Hybrid nano-optical and nano-mechanical imaging and spectroscopy thus enables the systematic study of the coupling of structural and mechanical degrees of freedom to the nanoscale electronic and optical properties in layered 2D materials.

preprint2016arXiv

Multiple Hot-Carrier Collection in Photo-Excited Graphene Moire Superlattices

In conventional light harvesting devices, the absorption of a single photon only excites one electron, which sets the standard limit of power-conversion efficiency, such as the Shockley-Queisser limit. In principle, generating and harnessing multiple carriers per absorbed photon can improve the efficiency and possibly overcome this limit. Here, we report the observation of multiple hot carrier collection in graphene-boron-nitride Moire superlattice structures. A record-high zero-bias photoresponsivity of 0.3 ampere per watt, equivalently, an external quantum efficiency exceeding 50 percent, is achieved utilizing graphene photo-Nernst effect, which demonstrates a collection of at least 5 carriers per absorbed photon. We reveal that this effect arises from the enhanced Nernst coefficient through Lifshtiz transition at low energy Van Hove singularities, which is an emergent phenomenon due to the formation of Moire minibands. Our observation points to a new means for extremely efficient and flexible optoelectronics based on van der Waals heterostructures.

preprint2016arXiv

Optimal control of a linearized continuum model for re-entrant manufacturing production systems

A re-entrant manufacturing system producing a large number of items and involving many steps can be approximately modeled by a hyperbolic partial differential equation (PDE) according to mass conservation law with respect to a continuous density of items on a production process. The mathematic model is a typical nonlinear and nonlocal PDE and the cycle time depends nonlinearly on the work in progress. However, the nonlinearity brings mathematic and engineering difficulties in practical application. In this work, we address the optimal control based on the linearized system model and in order to improve the model and control accuracy, a modified system model taking into account the re-entrant degree of the product is utilized to reflect characteristics of small-scale and large-scale multiple re-entrant manufacturing systems. In this work, we solve the optimal output reference tracking problem through combination of variation approach and state feedback internal model control (IMC) method. Numerical example on optimal boundary influx for step-like demand rate is presented. In particular, the demand rates are generated by an known exosystem.

preprint2016arXiv

Probing the influence of dielectric environment on excitons in monolayer WSe2: Insight from high magnetic fields

Excitons in atomically-thin semiconductors necessarily lie close to a surface, and therefore their properties are expected to be strongly influenced by the surrounding dielectric environment. However, systematic studies exploring this role are challenging, in part because the most readily accessible exciton parameter -- the exciton's optical transition energy -- is largely \textit{un}affected by the surrounding medium. Here we show that the role of the dielectric environment is revealed through its systematic influence on the \textit{size} of the exciton, which can be directly measured via the diamagnetic shift of the exciton transition in high magnetic fields. Using exfoliated WSe$_2$ monolayers affixed to single-mode optical fibers, we tune the surrounding dielectric environment by encapsulating the flakes with different materials, and perform polarized low-temperature magneto-absorption studies to 65~T. The systematic increase of the exciton's size with dielectric screening, and concurrent reduction in binding energy (also inferred from these measurements), is quantitatively compared with leading theoretical models. These results demonstrate how exciton properties can be tuned in future 2D optoelectronic devices.

preprint2016arXiv

Silicon photonic crystal cavity enhanced second-harmonic generation from monolayer WSe2

Nano-resonator integrated with two-dimensional materials (e.g. transition metal dichalcogenides) have recently emerged as a promising nano-optoelectronic platform. Here we demonstrate resonatorenhanced second-harmonic generation (SHG) in tungsten diselenide using a silicon photonic crystal cavity. By pumping the device with the ultrafast laser pulses near the cavity mode at the telecommunication wavelength, we observe a near visible SHG with a narrow linewidth and near unity linear polarization, originated from the coupling of the pump photon to the cavity mode. The observed SHG is enhanced by factor of ~200 compared to a bare monolayer on silicon. Our results imply the efficacy of cavity integrated monolayer materials for nonlinear optics and the potential of building a silicon-compatible second-order nonlinear integrated photonic platform.

preprint2015arXiv

A step forwards on the Erdős-Sós problem concerning the Ramsey numbers $R(3,k)$

Let $Δ_s=R(K_3,K_s)-R(K_3,K_{s-1})$, where $R(G,H)$ is the Ramsey number of graphs $G$ and $H$ defined as the smallest $n$ such that any edge coloring of $K_n$ with two colors contains $G$ in the first color or $H$ in the second color. In 1980, Erdős and Sós posed some questions about the growth of $Δ_s$. The best known concrete bounds on $Δ_s$ are $3 \le Δ_s \le s$, and they have not improved since the stating of the problem. In this paper we present some constructions, which imply in particular that $R(K_3,K_s) \ge R(K_3,K_{s-1}-e) + 4$. This does not improve the lower bound of 3 on $Δ_s$, but we still consider it a step towards to understanding its growth. We discuss some related questions and state two conjectures involving $Δ_s$, including the following: for some constant $d$ and all $s$ it holds that $Δ_s - Δ_{s+1} \leq d$. We also prove that if the latter is true, then $\lim_{s \rightarrow \infty} Δ_s/s=0$.

preprint2015arXiv

Anomalous light cones and valley optical selection rules of interlayer excitons in twisted heterobilayers

We show that, because of the inevitable twist and lattice mismatch in heterobilayers of transition metal dichalcogenides, interlayer excitons have six-fold degenerate light cones anomalously located at finite velocities on the parabolic energy dispersion. The photon emissions at each light cone are elliptically polarized, with major axis locked to the direction of exciton velocity, and helicity specified by the valley indices of the electron and the hole. These finite-velocity light cones allow unprecedented possibilities to optically inject valley polarization and valley current, and the observation of both direct and inverse valley Hall effects, by exciting interlayer excitons. Our findings suggest potential excitonic circuits with valley functionalities, and unique opportunities to study exciton dynamics and condensation phenomena in semiconducting 2D heterostructures.

preprint2015arXiv

Electrical Control of Second-Harmonic Generation in a WSe2 Monolayer Transistor

Nonlinear optical frequency conversion, in which optical fields interact with a nonlinear medium to produce new field frequencies, is ubiquitous in modern photonic systems. However, the nonlinear electric susceptibilities that give rise to such phenomena are often challenging to tune in a given material, and so far, dynamical control of optical nonlinearities remains confined to research labs as a spectroscopic tool. Here, we report a mechanism to electrically control second-order optical nonlinearities in monolayer WSe2, an atomically thin semiconductor. We show that the intensity of second-harmonic generation at the A-exciton resonance is tunable by over an order of magnitude at low temperature and nearly a factor of 4 at room temperature through electrostatic doping in a field-effect transistor. Such tunability arises from the strong exciton charging effects in monolayer semiconductors, which allow for exceptional control over the oscillator strengths at the exciton and trion resonances. The exciton-enhanced second-harmonic generation is counter-circularly polarized to the excitation laser, arising from the combination of the two-photon and one-photon valley selection rules that have opposite helicity in the monolayer. Our study paves the way towards a new platform for chip-scale, electrically tunable nonlinear optical devices based on two-dimensional semiconductors.

preprint2015arXiv

Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides

Atomically thin group-VIB transition metal dichalcogenides (TMDs) have recently emerged as a new class of two-dimensional (2D) semiconductors with extraordinary properties including the direct band gap in the visible frequency range, the pronounced spin-orbit coupling, the ultra-strong Coulomb interaction, and the rich physics associated with the valley degree of freedom. These 2D TMDs exhibit great potentials for device applications and have attracted vast interest for the exploration of new physics. 2D TMDs have complex electronic structures which underlie their physical properties. Here we review the bulk electronic structures in these new 2D materials as well as the theoretical models developed at different levels, along which we sort out the understandings on the origins of a variety of properties observed or predicted.

preprint2015arXiv

Generation of 30-fs pulses from a diode-pumped graphene mode-locked Yb:CaYAlO4 laser

Stable 30 fs pulses centered at 1068 nm (less than 10 optical cycles) are demonstrated in a diode pumped Yb:CaYAlO4 laser by using high-quality chemical vapor deposited monolayer graphene as the saturable absorber. The mode locked 8.43 optical-cycle pulses have a spectral bandwidth of ~ 50 nm and a pulse repetition frequency of ~ 113.5 MHz. To our knowledge, this is the shortest pulse ever reported for graphene mode-locked lasers and mode-locked Yb-doped bulk lasers. Our experimental results demonstrate that graphene mode locking is a very promising practical technique to generate few-cycle optical pulses directly from a laser oscillator.

preprint2015arXiv

Photo-Nernst current in graphene

Photocurrent measurements provide a powerful means of studying the spatially resolved optoelectronic and electrical properties of a material or device. Generally speaking there are two classes of mechanism for photocurrent generation: those involving separation of electrons and holes, and thermoelectric effects driven by electron temperature gradients. Here we introduce a new member in the latter class: the photo-Nernst effect. In graphene devices in a perpendicular magnetic field we observe photocurrent generated uniformly along the free edges, with opposite sign at opposite edges. The signal is antisymmetric in field, shows a peak versus gate voltage at the neutrality point flanked by wings of opposite sign at low fields, and exhibits quantum oscillations at higher fields. These features are all explained by the Nernst effect associated with laser-induced electron heating. This photo-Nernst current provides a simple and clear demonstration of the Shockley-Ramo nature of long-range photocurrent generation in a gapless material.

preprint2015arXiv

Population pulsation resonances of excitons in monolayer MoSe2 with sub 1 μeV linewidth

Monolayer transition metal dichalcogenides, a new class of atomically thin semiconductors, possess optically coupled 2D valley excitons. The nature of exciton relaxation in these systems is currently poorly understood. Here, we investigate exciton relaxation in monolayer MoSe2 using polarization-resolved coherent nonlinear optical spectroscopy with high spectral resolution. We report strikingly narrow population pulsation resonances with two different characteristic linewidths of 1 μeV and <0.2 μeV at low-temperature. These linewidths are more than three orders of magnitude narrower than the photoluminescence and absorption linewidth, and indicate that a component of the exciton relaxation dynamics occurs on timescales longer than 1 ns. The ultra-narrow resonance (<0.2 μeV) emerges with increasing excitation intensity, and implies the existence of a long-lived state whose lifetime exceeds 6 ns.

preprint2015arXiv

Theory of low power ultra-broadband terahertz sideband generation in bi-layer graphene

In a semiconductor illuminated by a strong terahertz field, optically excited electron-hole pairs can recombine to emit light in a broad frequency comb evenly spaced by twice the terahertz frequency. Such high-order terahertz sideband generation is of interest both as an example of extreme nonlinear optics and also as a method for ultrafast electro-optical modulation. So far, this phenomenon has only been observed with large field strengths (~10 kVcm-1), an obstacle for technological applications. Here we predict that bi-layer graphene generates high-order sidebands at much weaker terahertz fields. We find that a terahertz field of strength 1 kVcm-1 can produce a high-sideband spectrum of about 30 THz, 100 times broader than in GaAs. The sidebands are generated despite the absence of classical collisions, with the quantum coherence of the electron-hole pairs enabling recombination. These remarkable features lower the barrier to desktop electro-optical modulation at terahertz frequencies, facilitating ultrafast optical communications.

preprint2015arXiv

Trion Formation Dynamics in Monolayer Transition Metal Dichalcogenides

We report charged exciton (trion) formation dynamics in doped monolayer transition metal dichalcogenides (TMDs), specifically molybdenum diselenide (MoSe2), using resonant two-color pump-probe spectroscopy. When resonantly pumping the exciton transition, trions are generated on a picosecond timescale through exciton-electron interaction. As the pump energy is tuned from the high energy to low energy side of the inhomogeneously broadened exciton resonance, the trion formation time increases by ~ 50%. This feature can be explained by the existence of both localized and delocalized excitons in a disordered potential and suggests the existence of an exciton mobility edge in TMDs. The quasiparticle formation and conversion processes are important for interpreting photoluminescence and photoconductivity in TMDs.

preprint2015arXiv

Ultra-Low Threshold Monolayer Semiconductor Nanocavity Lasers

Engineering the electromagnetic environment of a nanoscale light emitter by a photonic cavity can significantly enhance its spontaneous emission rate through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter, providing the ultimate low-threshold laser system with small footprint, low power consumption and ultrafast modulation. A state-of-the-art ultra-low threshold nanolaser has been successfully developed though embedding quantum dots into photonic crystal cavity (PhCC). However, several core challenges impede the practical applications of this architecture, including the random positions and compositional fluctuations of the dots, extreme difficulty in current injection, and lack of compatibility with electronic circuits. Here, we report a new strategy to lase, where atomically thin crystalline semiconductor, i.e., a tungsten-diselenide (WSe2) monolayer, is nondestructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PhCC. A new type of continuous-wave nanolaser operating in the visible regime is achieved with an optical pumping threshold as low as 27 nW at 130 K, similar to the value achieved in quantum dot PhCC lasers. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within 1 nm of the PhCC surface. The surface-gain geometry allows unprecedented accessibilities to multi-functionalize the gain, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.

preprint2015arXiv

Valley excitons in two-dimensional semiconductors

Monolayer group-VIB transition metal dichalcogenides have recently emerged as a new class of semiconductors in the two-dimensional limit. The attractive properties include: the visible range direct band gap ideal for exploring optoelectronic applications; the intriguing physics associated with spin and valley pseudospin of carriers which implies potentials for novel electronics based on these internal degrees of freedom; the exceptionally strong Coulomb interaction due to the two-dimensional geometry and the large effective masses. The physics of excitons, the bound states of electrons and holes, has been one of the most actively studied topics on these two-dimensional semiconductors, where the excitons exhibit remarkably new features due to the strong Coulomb binding, the valley degeneracy of the band edges, and the valley dependent optical selection rules for interband transitions. Here we give a brief overview of the experimental and theoretical findings on excitons in two-dimensional transition metal dichalcogenides, with focus on the novel properties associated with their valley degrees of freedom.

preprint2014arXiv

Bright excitons in monolayer transition metal dichalcogenides: from Dirac cones to Dirac saddle points

In monolayer transition metal dichalcogenides, tightly bound excitons have been discovered with a valley pseudospin that can be optically addressed through polarization selection rules. Here, we show that this valley pseudospin is strongly coupled to the exciton center-of-mass motion through electron-hole exchange. This coupling realizes a massless Dirac cone with chirality index I=2 for excitons inside the light cone, i.e. bright excitons. Under moderate strain, the I=2 Dirac cone splits into two degenerate I=1 Dirac cones, and saddle points with a linear Dirac spectrum emerge in the bright exciton dispersion. Interestingly, after binding an extra electron, the charged exciton becomes a massive Dirac particle associated with a large valley Hall effect protected from intervalley scattering. Our results point to unique opportunities to study Dirac physics, with exciton's optical addressability at specifiable momentum, energy and pseudospin. The strain-tunable valley-orbit coupling also implies new structures of exciton condensates, new functionalities of excitonic circuits, and possibilities for mechanical control of valley pseudospin.

preprint2014arXiv

Coherent Electronic Coupling in Atomically Thin MoSe2

We report the first direct spectroscopic evidence for coherent electronic coupling between excitons and trions in atomically thin transition metal dichalcogenides, specifically monolayer MoSe2. Signatures of coupling appear as isolated cross-peaks in two-color pump-probe spectra, and the lineshape of the peaks reveals that the coupling originates from many-body interactions. Excellent agreement between the experiment and density matrix calculations suggests the formation of a correlated exciton-trion state due to their coupling.

preprint2014arXiv

Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions

Light-emitting diodes are of importance for lighting, displays, optical interconnects, logic and sensors. Hence the development of new systems that allow improvements in their efficiency, spectral properties, compactness and integrability could have significant ramifications. Monolayer transition metal dichalcogenides have recently emerged as interesting candidates for optoelectronic applications due to their unique optical properties. Electroluminescence has already been observed from monolayer MoS2 devices. However, the electroluminescence efficiency was low and the linewidth broad due both to the poor optical quality of MoS2 and to ineffective contacts. Here, we report electroluminescence from lateral p-n junctions in monolayer WSe2 induced electrostatically using a thin boron nitride support as a dielectric layer with multiple metal gates beneath. This structure allows effective injection of electrons and holes, and combined with the high optical quality of WSe2 it yields bright electroluminescence with 1000 times smaller injection current and 10 times smaller linewidth than in MoS2. Furthermore, by increasing the injection bias we can tune the electroluminescence between regimes of impurity-bound, charged, and neutral excitons. This system has the required ingredients for new kinds of optoelectronic devices such as spin- and valley-polarized light-emitting diodes, on-chip lasers, and two-dimensional electro-optic modulators.

preprint2014arXiv

Highly Anisotropic and Robust Excitons in Monolayer Black Phosphorus

Semi-metallic graphene and semiconducting monolayer transition metal dichalcogenides (TMDCs) are the two-dimensional (2D) materials most intensively studied in recent years. Recently, black phosphorus emerged as a promising new 2D material due to its widely tunable and direct bandgap, high carrier mobility and remarkable in-plane anisotropic electrical, optical and phonon properties. However, current progress is primarily limited to its thin-film form, and its unique properties at the truly 2D quantum confinement have yet to be demonstrated. Here, we reveal highly anisotropic and tightly bound excitons in monolayer black phosphorus using polarization-resolved photoluminescence measurements at room temperature. We show that regardless of the excitation laser polarization, the emitted light from the monolayer is linearly polarized along the light effective mass direction and centers around 1.3 eV, a clear signature of emission from highly anisotropic bright excitons. In addition, photoluminescence excitation spectroscopy suggests a quasiparticle bandgap of 2.2 eV, from which we estimate an exciton binding energy of around 0.9 eV, consistent with theoretical results based on first-principles. The experimental observation of highly anisotropic, bright excitons with exceedingly large binding energy not only opens avenues for the future explorations of many-electron effects in this unusual 2D material, but also suggests a promising future in optoelectronic devices such as on-chip infrared light sources.

preprint2014arXiv

Intrinsic Exciton Linewidth in Monolayer Transition Metal Dichalcogenides

Monolayer transition metal dichalcogenides feature Coulomb-bound electron-hole pairs (excitons) with exceptionally large binding energy and coupled spin and valley degrees of freedom. These unique attributes have been leveraged for electrical and optical control of excitons for atomically-thin optoelectronics and valleytronics. The development of such technologies relies on understanding and quantifying the fundamental properties of the exciton. A key parameter is the intrinsic exciton homogeneous linewidth, which reflects irreversible quantum dissipation arising from system (exciton) and bath (vacuum and other quasiparticles) interactions. Using optical coherent two-dimensional spectroscopy, we provide the first experimental determination of the exciton homogeneous linewidth in monolayer transition metal dichalcogenides, specifically tungsten diselenide (WSe2). The role of exciton-exciton and exciton-phonon interactions in quantum decoherence is revealed through excitation density and temperature dependent linewidth measurements. The residual homogeneous linewidth extrapolated to zero density and temperature is ~1.5 meV, placing a lower bound of approximately 0.2 ps on the exciton radiative lifetime. The exciton quantum decoherence mechanisms presented in this work are expected to be ubiquitous in atomically-thin semiconductors.

preprint2014arXiv

Lateral heterojunctions within monolayer semiconductors

Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers, and high-speed transistors. Creating analogous heterojunctions between different two-dimensional (2D) semiconductors would enable band engineering within the 2D plane and open up new realms in materials science, device physics and engineering. Here we demonstrate that seamless high-quality in-plane heterojunctions can be grown between the 2D monolayer semiconductors MoSe2 and WSe2. The junctions, grown by lateral hetero-epitaxy using physical vapor transport, are visible in an optical microscope and show enhanced photoluminescence. Atomically resolved transmission electron microscopy reveals that their structure is an undistorted honeycomb lattice in which substitution of one transition metal by another occurs across the interface. The growth of such lateral junctions will allow new device functionalities, such as in-plane transistors and diodes, to be integrated within a single atomically thin layer.

preprint2014arXiv

Magnetic Control of Valley Pseudospin in Monolayer WSe2

Local energy extrema of the bands in momentum space, or valleys, can endow electrons in solids with pseudo-spin in addition to real spin. In transition metal dichalcogenides this valley pseudo-spin, like real spin, is associated with a magnetic moment which underlies the valley-dependent circular dichroism that allows optical generation of valley polarization, intervalley quantum coherence, and the valley Hall effect. However, magnetic manipulation of valley pseudospin via this magnetic moment, analogous to what is possible with real spin, has not been shown before. Here we report observation of the valley Zeeman splitting and magnetic tuning of polarization and coherence of the excitonic valley pseudospin, by performing polarization-resolved magneto-photoluminescence on monolayer WSe2. Our measurements reveal both the atomic orbital and lattice contributions to the valley orbital magnetic moment; demonstrate the deviation of the band edges in the valleys from an exact massive Dirac fermion model; and reveal a striking difference between the magnetic responses of neutral and charged valley excitons which is explained by renormalization of the excitonic spectrum due to strong exchange interactions.

preprint2014arXiv

Nonlinear valley and spin currents from Fermi pocket anisotropy in 2D crystals

Controlled flow of spin and valley pseudospin is key to future electronics exploiting these internal degrees of freedom of carriers. Here we discover a universal possibility for generating spin and valley currents by electric bias or temperature gradient only, which arises from the anisotropy of Fermi pockets in crystalline solids. We find spin and valley currents to the second order in the electric field, as well as their thermoelectric counterparts, i.e. the nonlinear spin and valley Seebeck effects. These second-order nonlinear responses allow two unprecedented possibilities to generate pure spin and valley flows without net charge current: (i) by an AC bias; or (ii) by an arbitrary inhomogeneous temperature distribution. As examples, we predict appreciable nonlinear spin and valley currents in two-dimensional (2D) crystals including graphene, monolayer and trilayer transition metal dichalcogenides, and monolayer gallium selenide. Our finding points to a new route towards electrical and thermal generations of spin and valley currents for spintronic and valleytronic applications based on 2D quantum materials.

preprint2014arXiv

Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures

Two-dimensional (2D) materials, such as graphene1, boron nitride2, and transition metal dichalcogenides (TMDs)3-5, have sparked wide interest in both device physics and technological applications at the atomic monolayer limit. These 2D monolayers can be stacked together with precise control to form novel van der Waals heterostructures for new functionalities2,6-9. One highly coveted but yet to be realized heterostructure is that of differing monolayer TMDs with type II band alignment10-12. Their application potential hinges on the fabrication, understanding, and control of bonded monolayers, with bound electrons and holes localized in individual monolayers, i.e. interlayer excitons. Here, we report the first observation of interlayer excitons in monolayer MoSe2-WSe2 heterostructures by both photoluminescence and photoluminescence excitation spectroscopy. The energy and luminescence intensity of interlayer excitons are highly tunable by an applied vertical gate voltage, implying electrical control of the heterojunction band-alignment. Using time resolved photoluminescence, we find that the interlayer exciton is long-lived with a lifetime of about 1.8 ns, an order of magnitude longer than intralayer excitons13-16. Our work demonstrates the ability to optically pump interlayer electric polarization and provokes the immediate exploration of interlayer excitons for condensation phenomena, as well as new applications in 2D light-emitting diodes, lasers, and photovoltaic devices.

preprint2014arXiv

Single Quantum Emitters in Monolayer Semiconductors

Single quantum emitters (SQEs) are at the heart of quantum optics and photonic quantum information technologies. To date, all demonstrated solid-state single-photon sources are confined in three-dimensional materials. Here, we report a new class of SQEs based on excitons that are spatially localized by defects in two-dimensional tungsten-diselenide monolayers. The optical emission from these SQEs shows narrow linewidths of ~0.13 meV, about two orders of magnitude smaller than that of delocalized valley excitons. Second-order correlation measurements reveal strong photon anti-bunching, unambiguously establishing the single photon nature of the emission. The SQE emission shows two non-degenerate transitions, which are cross-linearly polarized. We assign this fine structure to two excitonic eigen-modes whose degeneracy is lifted by a large ~0.71 meV coupling, likely due to the electron-hole exchange interaction in presence of anisotropy. Magneto-optical measurements also reveal an exciton g-factor of ~8.7, several times larger than that of delocalized valley excitons. In addition to their fundamental importance, establishing new SQEs in 2D quantum materials could give rise to practical advantages in quantum information processing, such as efficient photon extraction and high integratability and scalability.

preprint2014arXiv

Valley Contrasting Magnetoluminescence in Monolayer MoS$_{2}$ Quantum Hall Systems

The valley dependent optical selection rules in recently discovered monolayer group-VI transition metal dichalcogenides (TMDs) make possible optical control of valley polarization, a crucial step towards valleytronic applications. However, in presence of Landaul level(LL) quantization such selection rules are taken over by selection rules between the LLs, which are not necessarily valley contrasting. Using MoS$_{2}$ as an example we show that the spatial inversion-symmetry breaking results in unusual valley dependent inter-LL selection rules, which directly locks polarization to valley. We find a systematic valley splitting for all Landau levels (LLs) in the quantum Hall regime, whose magnitude is linearly proportional to the magnetic field and in comparable with the LL spacing. Consequently, unique plateau structures are found in the optical Hall conductivity, which can be measured by the magneto-optical Faraday rotations.

preprint2013arXiv

Bounds on Shannon Capacity and Ramsey Numbers from Product of Graphs

In this note we study Shannon capacity of channels in the context of classical Ramsey numbers. We overview some of the results on capacity of noisy channels modelled by graphs, and how some constructions may contribute to our knowledge of this capacity. We present an improvement to the constructions by Abbott and Song and thus establish new lower bounds for a special type of multicolor Ramsey numbers. We prove that our construction implies that the supremum of the Shannon capacity over all graphs with independence number 2 cannot be achieved by any finite graph power. This can be generalized to graphs with any bounded independence number.

preprint2013arXiv

Control of Two-Dimensional Excitonic Light Emission via Photonic Crystal

Monolayers of transition metal dichalcogenides (TMDCs) have emerged as new optoelectronic materials in the two dimensional (2D) limit, exhibiting rich spin-valley interplays, tunable excitonic effects, and strong light-matter interactions. An essential yet undeveloped ingredient for many photonic applications is the manipulation of its light emission. Here we demonstrate the control of excitonic light emission from monolayer tungsten diselenide (WSe2) in an integrated photonic structure, achieved by transferring one monolayer onto a photonic crystal (PhC) with a cavity. In addition to the observation of greatly enhanced (~60 times) photoluminescence of WSe2 and an effectively coupled cavity-mode emission, we are able to redistribute the emitted photons both polarly and azimuthally in the far field through designing PhC structures, as revealed by momentum-resolved microscopy. A 2D optical antenna is thus constructed. Our work suggests a new way of manipulating photons in hybrid 2D photonics, important for future energy efficient optoelectronics and 2D nano-lasers.

preprint2013arXiv

Electrical Control of Two-Dimensional Neutral and Charged Excitons in a Monolayer Semiconductor

Monolayer group VI transition metal dichalcogenides have recently emerged as semiconducting alternatives to graphene in which the true two-dimensionality (2D) is expected to illuminate new semiconducting physics. Here we investigate excitons and trions (their singly charged counterparts) which have thus far been challenging to generate and control in the ultimate 2D limit. Utilizing high quality monolayer molybdenum diselenide (MoSe2), we report the unambiguous observation and electrostatic tunability of charging effects in positively charged (X+), neutral (Xo), and negatively charged (X-) excitons in field effect transistors via photoluminescence. The trion charging energy is large (30 meV), enhanced by strong confinement and heavy effective masses, while the linewidth is narrow (5 meV) at temperatures below 55 K. This is greater spectral contrast than in any known quasi-2D system. We also find the charging energies for X+ and X- to be nearly identical implying the same effective mass for electrons and holes.

preprint2013arXiv

Giant Faraday rotation induced by Berry phase in bilayer graphene under strong terahertz fields

High-order terahertz (THz) sideband generation (HSG) in semiconductors is a phenomenon with physics similar to high-order harmonic generation but in a much lower frequency regime. It was found that the electron-hole pairs excited by a weak optical laser can accumulate Berry phases along a cyclic path under the driving of a strong THz field. The Berry phases appear as the Faraday rotation angles of the emission signal under short-pulse excitation in monolayer MoS$_2$. In this paper, the theory of Berry phase in THz extreme nonlinear optics is applied to biased bilayer graphene with Bernal stacking, which has similar Bloch band features and optical properties to the monolayer MoS$_2$, such as time-reversal related valleys and valley contrasting optical selection rules. The bilayer graphene has much larger Berry curvature than monolayer MoS$_2$, which leads to a giant Faraday rotation of the optical emission ($\sim$ 1 rad for a THz field with frequency 1 THz and strength 8 kV/cm). This provides opportunities to use bilayer graphene and low-power THz lasers for ultrafast electro-optical devices.

preprint2013arXiv

Magnetoelectric effects and valley controlled spin quantum gates in transition metal dichalcogenide bilayers

In monolayer group-VI transition metal dichalcogenides (TMDC), charge carriers have spin and valley degrees of freedom, both associated with magnetic moments. On the other hand, the layer degree of freedom in multilayers is associated with electrical polarization. Here, we show that TMDC bilayers offer an unprecedented platform to realize a strong coupling between the spin, layer pseudospin, and valley degrees of freedom of holes. Such coupling not only gives rise to the spin Hall effect and spin circular dichroism in inversion symmetric bilayer, but also leads to a variety of magnetoelectric effects permitting quantum manipulation of these electronic degrees of freedom. Oscillating electric and magnetic fields can both drive the hole spin resonance where the two fields have valley-dependent interference, making possible a prototype interplay between the spin and valley as information carriers for potential valley-spintronic applications. We show how to realize quantum gates on the spin qubit controlled by the valley bit.

preprint2013arXiv

Majorana Fermions on Zigzag Edge of Monolayer Transition Metal Dichalcogenides

Majorana fermions, quantum particles with non-Abelian exchange statistics, are not only of fundamental importance, but also building blocks for fault-tolerant quantum computation. Although certain experimental breakthroughs for observing Majorana fermions have been made recently, their conclusive dection is still challenging due to the lack of proper material properties of the underlined experimental systems. Here we propose a new platform for Majorana fermions based on edge states of certain non-topological two-dimensional semiconductors with strong spin-orbit coupling, such as monolayer group-VI transition metal dichalcogenides (TMD). Using first-principles calculations and tight-binding modeling, we show that zigzag edges of monolayer TMD can host well isolated single edge band with strong spin-orbit coupling energy. Combining with proximity induced s-wave superconductivity and in-plane magnetic fields, the zigzag edge supports robust topological Majorana bound states at the edge ends, although the two-dimensional bulk itself is non-topological. Our findings points to a controllable and integrable platform for searching and manipulating Majorana fermions.

preprint2013arXiv

Optical Generation of Excitonic Valley Coherence in Monolayer WSe2

Due to degeneracies arising from crystal symmetries, it is possible for electron states at band edges ("valleys") to have additional spin-like quantum numbers. An important question is whether coherent manipulation can be performed on such valley pseudospins, analogous to that routinely implemented using true spin, in the quest for quantum technologies. Here we show for the first time that SU(2) valley coherence can indeed be generated and detected. Using monolayer semiconductor WSe2 devices, we first establish the circularly polarized optical selection rules for addressing individual valley excitons and trions. We then reveal coherence between valley excitons through the observation of linearly polarized luminescence, whose orientation always coincides with that of any linearly polarized excitation. Since excitons in a single valley emit circularly polarized photons, linear polarization can only be generated through recombination of an exciton in a coherent superposition of the two valleys. In contrast, the corresponding photoluminescence from trions is not linearly polarized, consistent with the expectation that the emitted photon polarization is entangled with valley pseudospin. The ability to address coherence, in addition to valley polarization, adds a critical dimension to the quantum manipulation of valley index necessary for coherent valleytronics.

preprint2013arXiv

Spin-Layer Locking Effects in Optical Orientation of Exciton Spin in Bilayer WSe2

Coupling degrees of freedom of distinct nature plays a critical role in numerous physical phenomena. The recent emergence of layered materials provides a laboratory for studying the interplay between internal quantum degrees of freedom of electrons. Here, we report experimental signatures of new coupling phenomena connecting real spin with layer pseudospins in bilayer WSe2. In polarization-resolved photoluminescence measurements, we observe large spin orientation of neutral and charged excitons generated by both circularly and linearly polarized light, with a splitting of the trion spectrum into a doublet at large vertical electrical field. These observations can be explained by locking of spin and layer pseudospin in a given valley. Because up and down spin states are localized in opposite layers, spin relaxation is substantially suppressed, while the doublet emerges as a manifestation of electrically induced spin splitting resulting from the interlayer bias. The observed distinctive behavior of the trion doublet under circularly and linearly polarized light excitation further provides spectroscopic evidence of interlayer and intralayer trion species, a promising step toward optical manipulation in van der Waals heterostructures through the control of interlayer excitons.

preprint2013arXiv

Use of MAX-CUT for Ramsey Arrowing of Triangles

In 1967, Erdős and Hajnal asked the question: Does there exist a $K_4$-free graph that is not the union of two triangle-free graphs? Finding such a graph involves solving a special case of the classical Ramsey arrowing operation. Folkman proved the existence of these graphs in 1970, and they are now called Folkman graphs. Erdős offered \$100 for deciding if one exists with less than $10^{10}$ vertices. This problem remained open until 1988 when Spencer, in a seminal paper using probabilistic techniques, proved the existence of a Folkman graph of order $3\times 10^9$ (after an erratum), without explicitly constructing it. In 2008, Dudek and Rödl developed a strategy to construct new Folkman graphs by approximating the maximum cut of a related graph, and used it to improve the upper bound to 941. We improve this bound first to 860 using their approximation technique and then further to 786 with the MAX-CUT semidefinite programming relaxation as used in the Goemans-Williamson algorithm.

preprint2013arXiv

Vapor-Solid Growth of High Optical Quality MoS2 Monolayers With Near-Unity Valley Polarization

Monolayers of transition metal dichalcogenides (TMDCs) are atomically thin direct-gap semiconductors with potential applications in nanoelectronics, optoelectronics, and electrochemical sensing. Recent theoretical and experimental efforts suggest that they are ideal systems for exploiting the valley degrees of freedom of Bloch electrons. For example, Dirac valley polarization has been demonstrated in mechanically exfoliated monolayer MoS2 samples by polarization-resolved photoluminescence, although polarization has rarely been seen at room temperature. Here we report a new method for synthesizing high optical quality monolayer MoS2 single crystals up to 25 microns in size on a variety of standard insulating substrates (SiO2, sapphire and glass) using a catalyst-free vapor-solid growth mechanism. The technique is simple and reliable, and the optical quality of the crystals is extremely high, as demonstrated by the fact that the valley polarization approaches unity at 30 K and persists at 35% even at room temperature, suggesting a virtual absence of defects. This will allow greatly improved optoelectronic TMDC monolayer devices to be fabricated and studied routinely.

preprint2012arXiv

Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides

We show that inversion symmetry breaking together with spin-orbit coupling leads to coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides, making possible controls of spin and valley in these 2D materials. The spin-valley coupling at the valence band edges suppresses spin and valley relaxation, as flip of each index alone is forbidden by the valley contrasting spin splitting. Valley Hall and spin Hall effects coexist in both electron-doped and hole-doped systems. Optical interband transitions have frequency-dependent polarization selection rules which allow selective photoexcitation of carriers with various combination of valley and spin indices. Photo-induced spin Hall and valley Hall effects can generate long lived spin and valley accumulations on sample boundaries. The physics discussed here provides a route towards the integration of valleytronics and spintronics in multi-valley materials with strong spin-orbit coupling and inversion symmetry breaking.

preprint2012arXiv

Electrical Tuning of Valley Magnetic Moment via Symmetry Control

Crystal symmetry governs the nature of electronic Bloch states. For example, in the presence of time reversal symmetry, the orbital magnetic moment and Berry curvature of the Bloch states must vanish unless inversion symmetry is broken. In certain 2D electron systems such as bilayer graphene, the intrinsic inversion symmetry can be broken simply by applying a perpendicular electric field. In principle, this offers the remarkable possibility of switching on/off and continuously tuning the magnetic moment and Berry curvature near the Dirac valleys by reversible electrical control. Here we demonstrate this principle for the first time using bilayer MoS2, which has the same symmetry as bilayer graphene but has a bandgap in the visible that allows direct optical probing of these Berry-phase related properties. We show that the optical circular dichroism, which reflects the orbital magnetic moment in the valleys, can be continuously tuned from -15% to 15% as a function of gate voltage in bilayer MoS2 field-effect transistors. In contrast, the dichroism is gate-independent in monolayer MoS2, which is structurally non-centrosymmetric. Our work demonstrates the ability to continuously vary orbital magnetic moments between positive and negative values via symmetry control. This represents a new approach to manipulating Berry-phase effects for applications in quantum electronics associated with 2D electronic materials.

preprint2012arXiv

Photoresponse of a strongly correlated material determined by scanning photocurrent microscopy

The generation of a current by light is a key process in optoelectronic and photovoltaic devices. In band semiconductors, depletion fields associated with interfaces separate long-lived photo-induced carriers. However, in systems with strong electron-electron and electron-phonon correlations it is unclear what physics will dominate the photoresponse. Here we investigate photocurrent in a vanadium dioxide, an exemplary strongly correlated material known for its dramatic metal-insulator transition (MIT) at Tc = 68 C which could be useful for optoelectronic detection and switching up to ultraviolet wavelengths. Using scanning photocurrent microscopy (SPCM) on individual suspended VO2 nanobeams we observe photoresponse peaked at the metal-insulator boundary but extended throughout both insulating and metallic phases. We determine that the response is photo-thermal, implying efficient carrier relaxation to a local equilibrium in a manner consistent with strong correlations. Temperature dependent measurements reveal subtle phase changes within the insulating state. We further demonstrate switching of the photocurrent by optical control of the metal-insulator boundary arrangement. Our work shows the value of SPCM applied to nanoscale crystals for investigating strongly correlated materials, and the results are relevant for designing and controlling optoelectronic devices employing such materials.

preprint2012arXiv

Quantum-Enhanced Tunable Second-Order Optical Nonlinearity in Bilayer Graphene

Second order optical nonlinear processes involve the coherent mixing of two electromagnetic waves to generate a new optical frequency, which plays a central role in a variety of applications, such as ultrafast laser systems, rectifiers, modulators, and optical imaging. However, progress is limited in the mid-infrared (MIR) region due to the lack of suitable nonlinear materials. It is desirable to develop a robust system with a strong, electrically tunable second order optical nonlinearity. Here we demonstrate theoretically that AB-stacked bilayer graphene (BLG) can exhibit a giant and tunable second order nonlinear susceptibility χ^(2) once an in-plane electric field is applied. χ^(2) can be electrically tuned from 0 to ~ {10^5 pm/V}, three orders of magnitude larger than the widely used nonlinear crystal AgGaSe2. We show that the unusually large χ^(2) arises from two different quantum enhanced two-photon processes thanks to the unique electronic spectrum of BLG. The tunable electronic bandgap of BLG adds additional tunability on the resonance of χ^(2), which corresponds to a tunable wavelength ranging from ~2.6 μm to ~3.1 μm for the up-converted photon. Combined with the high electron mobility and optical transparency of the atomically thin BLG, our scheme suggests a new regime of nonlinear photonics based on BLG.

preprint2011arXiv

New Aspects of Photocurrent Generation at Graphene pn Junctions Revealed by Ultrafast Optical Measurements

The unusual electrical and optical properties of graphene make it a promising candidate for optoelectronic applications. An important, but as yet unexplored aspect is the role of photo-excited hot carriers in charge and energy transport at graphene interfaces. Here, we perform time-resolved (~250 fs) scanning photocurrent microscopy on a tunable graphene pn junction. The ultrafast pump-probe measurements yield a photocurrent response time of ~1.5 ps at room temperature increasing to ~4 ps at 20 K. Combined with the negligible dependence of photocurrent amplitude on environmental temperature this implies that hot carriers rather than phonons dominate energy transport at high frequencies. Gate-dependent pump-probe measurements demonstrate that both thermoelectric and built-in electric field effects contribute to the photocurrent excited by laser pulses. The relative weight of each contribution depends on the junction configuration. A single laser beam excitation also displays multiple polarity-reversals as a function of carrier density, a signature of impact ionization. Our results enhance the understanding of non-equilibrium electron dynamics, electron-electron interactions, and electron-phonon interactions in graphene. They also determine fundamental limits on ultrafast device operation speeds (~500 GHz) for potential graphene-based photon detection, sensing, and communication.

preprint2010arXiv

Fast spin rotations by optically controlled geometric phases in a quantum dot

We demonstrate optical control of the geometric phase acquired by one of the spin states of an electron confined in a charge-tunable InAs quantum dot via cyclic 2pi excitations of an optical transition in the dot. In the presence of a constant in-plane magnetic field, these optically induced geometric phases result in the effective rotation of the spin about the magnetic field axis and manifest as phase shifts in the spin quantum beat signal generated by two time-delayed circularly polarized optical pulses. The geometric phases generated in this manner more generally perform the role of a spin phase gate, proving potentially useful for quantum information applications.

preprint2009arXiv

Photo-Thermoelectric Effect at a Graphene Interface Junction

We investigate the optoelectronic response of a graphene interface junction, formed with bilayer and single-layer graphene, by photocurrent (PC) microscopy. We measure the polarity and amplitude of the PC while varying the Fermi level by tuning a gate voltage. These measurements show that the generation of PC is by a photo-thermoelectric effect. The PC displays a factor of ~10 increase at the cryogenic temperature as compared to room temperature. Assuming the thermoelectric power has a linear dependence on the temperature, the inferred graphene thermal conductivity from temperature dependent measurements has a T^{1.5} dependence below ~100 K, which agrees with recent theoretical predictions.

Xiaodong Xu

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84 published item(s)

Secure Semantic Communication With Homomorphic Encryption

TDGCN-Based Mobile Multiuser Physical-Layer Authentication for EI-Enabled IIoT

Modeling and Performance Analysis of Single-Server Database Over Quasi-static Rayleigh Fading Channel

Strain-programmable van der Waals magnetic tunnel junctions

1T-FeS$_2$$:$ a new type of two-dimensional metallic ferromagnet

Atomically imprinted graphene plasmonic cavities

Hexcitons and oxcitons in monolayer WSe$_2$

Imaging dynamic exciton interactions and coupling in transition metal dichalcogenides

Light-Induced Ferromagnetism in Moiré Superlattices

Long-range transport of 2D excitons with acoustic waves

Many-body exciton and inter-valley correlations in heavily electron-doped WSe$_2$ monolayers

The Impact of Inelastic Collisions with Hydrogen on NLTE Copper Abundances in Metal-Poor Stars

Coherent exciton-exciton interactions and exciton dynamics in a MoSe\textsubscript{2}/WSe\textsubscript{2} heterostructure

Defect-Induced Magnetic Skyrmion in Two-Dimensional Chromium Tri-Iodide Monolayer

Electric control of a canted-antiferromagnetic Chern insulator

Evidence for equilibrium excitons and exciton condensation in monolayer WTe2

Unraveling intrinsic flexoelectricity in twisted double bilayer graphene

2D van der Waals Nanoplatelets with Robust Ferromagnetism

All-angle Negative Reflection with An Ultrathin Acoustic Gradient Metasurface: Floquet-Bloch Modes Perspective and Experimental Verification

Direct observation of 2D magnons in atomically thin CrI$_3$

Direct Observation of Intravalley Phonon Scattering of 2s Excitons in MoSe$_2$ and WSe$_2$ Monolayers

Experimental realisation of Dual Periodicity Moiré Superlattice in a MoSe$_2$/WSe$_2$ Heterobilayer

LAMOST/HRS Spectroscopic Analysis of Two New Li-rich Giants

Layer-Resolved Magnetic Proximity Effect in van der Waals Heterostructures

Magnetic proximity and nonreciprocal current switching in a monolayer WTe2 helical edge

Metasurface Integrated Monolayer Exciton Polariton

Monolayer Semiconductor Auger Detector

One-Dimensional Moiré Excitons in Transition-Metal Dichalcogenide Heterobilayers

Stacking Domain Wall Magnons in Twisted van der Waals Magnets

Superconductivity without insulating states in twisted bilayer graphene stabilized by monolayer WSe$_2$

Superposition of intra- and inter-layer excitons in twistronic MoSe$_2$/WSe$_2$ bilayers probed by resonant Raman scattering

Tunable correlation-driven symmetry breaking in twisted double bilayer graphene

Valley Phonons and Exciton Complexes in a Monolayer Semiconductor

Tuning Inelastic Light Scattering via Symmetry Control in 2D Magnet CrI$_3$

Band parameters and hybridization in 2D semiconductor heterostructures from photoemission spectroscopy

Directional Interlayer Spin-Valley Transfer in Two-Dimensional Heterostructures

Dynamical analysis of modified gravity with nonminimal gravitational coupling to matter

Exciton Dynamics in Monolayer Transition Metal Dichalcogenides

Expansion of a Valley-Polarized Exciton Cloud in a 2D Heterostructure

Finite-dimensional output feedback regulator for a mono-tubular heatexchanger process

Hybrid tip-enhanced nano-spectroscopy and -imaging of monolayer WSe2 with local strain control

Multiple Hot-Carrier Collection in Photo-Excited Graphene Moire Superlattices

Optimal control of a linearized continuum model for re-entrant manufacturing production systems

Probing the influence of dielectric environment on excitons in monolayer WSe2: Insight from high magnetic fields

Silicon photonic crystal cavity enhanced second-harmonic generation from monolayer WSe2

A step forwards on the Erdős-Sós problem concerning the Ramsey numbers $R(3,k)$

Anomalous light cones and valley optical selection rules of interlayer excitons in twisted heterobilayers

Electrical Control of Second-Harmonic Generation in a WSe2 Monolayer Transistor

Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides

Generation of 30-fs pulses from a diode-pumped graphene mode-locked Yb:CaYAlO4 laser

Photo-Nernst current in graphene

Population pulsation resonances of excitons in monolayer MoSe2 with sub 1 μeV linewidth

Theory of low power ultra-broadband terahertz sideband generation in bi-layer graphene

Trion Formation Dynamics in Monolayer Transition Metal Dichalcogenides

Ultra-Low Threshold Monolayer Semiconductor Nanocavity Lasers

Valley excitons in two-dimensional semiconductors

Bright excitons in monolayer transition metal dichalcogenides: from Dirac cones to Dirac saddle points

Coherent Electronic Coupling in Atomically Thin MoSe2

Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions

Highly Anisotropic and Robust Excitons in Monolayer Black Phosphorus

Intrinsic Exciton Linewidth in Monolayer Transition Metal Dichalcogenides

Lateral heterojunctions within monolayer semiconductors

Magnetic Control of Valley Pseudospin in Monolayer WSe2

Nonlinear valley and spin currents from Fermi pocket anisotropy in 2D crystals

Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures

Single Quantum Emitters in Monolayer Semiconductors

Valley Contrasting Magnetoluminescence in Monolayer MoS$_{2}$ Quantum Hall Systems

Bounds on Shannon Capacity and Ramsey Numbers from Product of Graphs

Control of Two-Dimensional Excitonic Light Emission via Photonic Crystal

Electrical Control of Two-Dimensional Neutral and Charged Excitons in a Monolayer Semiconductor

Giant Faraday rotation induced by Berry phase in bilayer graphene under strong terahertz fields

Magnetoelectric effects and valley controlled spin quantum gates in transition metal dichalcogenide bilayers

Majorana Fermions on Zigzag Edge of Monolayer Transition Metal Dichalcogenides

Optical Generation of Excitonic Valley Coherence in Monolayer WSe2