BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Jiaqiang Yan

Jiaqiang Yan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.supr-conphysics.app-phphysics.opticsquant-ph

Catalog footprint

What is connected

57works
7topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

57 published item(s)

preprint2022arXiv

Direct visualization of surface spin-flip transition in MnBi4Te7

We report direct visualization of spin-flip transition of the surface layer in antiferromagnet MnBi4Te7, a natural superlattice of alternating MnBi2Te4 and Bi2Te3 layers, using cryogenic magnetic force microscopy (MFM). The observation of magnetic contrast across domain walls and step edges confirms that the antiferromagnetic order persists to the surface layers. The magnetic field dependence of the MFM images reveals that the surface magnetic layer undergoes a first-order spin-flip transition at a magnetic field that is lower than the bulk transition, in excellent agreement with a revised Mills' model. Our analysis indicates an enhancement of the order parameter in the surface magnetic layer, implying robust ferromagnetism in the single-layer limit. The direct visualization of surface spin-flip transition not only opens up exploration of surface metamagnetic transitions in layered antiferromagnets, but also provides experimental support for realizing quantized transport in ultra-thin films of MnBi4Te7 and other natural superlattice topological magnets.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Gaps in Topological Magnon Spectra: Intrinsic vs. Extrinsic Effects

For topological magnon spectra, determining and explaining the presence of a gap at a magnon crossing point is a key to characterize the topological properties of the system. An inelastic neutron scattering study of a single crystal is a powerful experimental technique that is widely employed to probe the magnetic excitation spectra of topological materials. Here, we show that when the scattering intensity rapidly disperses in the vicinity of a crossing point, such as a Dirac point, the apparent topological gap size is extremely sensitive to experimental conditions including sample mosaic, resolution, and momentum integration range. We demonstrate these effects using comprehensive neutron-scattering measurements of CrCl$_3$. Our measurements confirm the gapless nature of the Dirac magnon in CrCl$_3$, but also reveal an artificial, i.e. extrinsic, magnon gap unless the momentum integration range is carefully controlled. Our study provides an explanation of the apparent discrepancies between spectroscopic and first-principles estimates of Dirac magnon gap sizes, and provides guidelines for accurate spectroscopic measurement of topological magnon gaps.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Hidden local symmetry breaking in a kagome-lattice magnetic Weyl semimetal

Exploring the relationship between intriguing physical properties and structural complexity is a central topic in studying modern functional materials. Co$_{3}$Sn$_{2}$S$_{2}$, a new discovered kagome-lattice magnetic Weyl semimetal, has triggered intense interest owing to the intimate coupling between topological semimetallic states and peculiar magnetic properties. However, the origins of the magnetic phase separation and spin glass state below $T_{C}$ in this ordered compound are two unresolved yet important puzzles in understanding its magnetism. Here, we report the discovery of local symmetry breaking surprisingly co-emerges with the onset of ferromagnetic order in Co$_{3}$Sn$_{2}$S$_{2}$, by a combined use of neutron total scattering and half polarized neutron diffraction. The mismatch of local and average symmetries occurs below $T_{C}$, indicating that Co$_{3}$Sn$_{2}$S$_{2}$ evolves to an intrinsically lattice disordered system when the ferromagnetic order is established. The local symmetry breaking with intrinsic lattice disorder provides new understandings to the puzzling magnetic properties. Our density function theory calculation indicates that the local symmetry breaking is expected to reorient local ferromagnetic moments, unveiling the existence of the ferromagnetic instability associated with the lattice instability. Furthermore, DFT calculation unveils that the local symmetry breaking could affect the Weyl property by breaking mirror plane. Our findings highlight the fundamentally important role that the local symmetry breaking plays in advancing our understanding on the magnetic and topological properties in Co$_{3}$Sn$_{2}$S$_{2}$, which may draw the attention to explore the overlooked local symmetry breaking in Co$_{3}$Sn$_{2}$S$_{2}$, its derivatives, and more broadly in other topological Dirac/Weyl semimetals and kagome-lattice magnets.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Light-Induced Ferromagnetism in Moiré Superlattices

Many-body interactions between carriers lie at the heart of correlated physics. The ability to tune such interactions would open the possibility to access and control complex electronic phase diagrams on demand. Recently, moiré superlattices formed by two-dimensional materials have emerged as a promising platform for quantum engineering such phenomena. The power of the moiré system lies in the high tunability of its physical parameters by tweaking layer twist angle, electrical field, moiré carrier filling, and interlayer coupling. Here, we report that optical excitation can drastically tune the spin-spin interactions between moiré trapped carriers, resulting in ferromagnetic order in WS2/WSe2 moiré superlattices over a small range of doping at elevated temperatures. Near the filling factor v = -1/3 (i.e., one hole per three moiré unit cells), as the excitation power at the exciton resonance increases, a well-developed hysteresis loop emerges in the reflective magnetic circular dichroism (RMCD) signal as a function of magnetic field, a hallmark of ferromagnetism. The hysteresis loop persists down to charge neutrality, and its shape evolves as the moiré superlattice is gradually filled, indicating changes of magnetic ground state properties. The observed phenomenon points to a mechanism in which itinerant photo-excited excitons mediate exchange coupling between moiré trapped holes. This exciton-mediated interaction can be of longer range than direct coupling between moiré trapped holes, and thus magnetic order can arise even in the dilute hole regime under optical excitation. This discovery adds a new and dynamic tuning knob to the rich many-body Hamiltonian of moiré quantum matter.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

On the Role of Defects in the Electronic Structure of MnBi$_{2-x}$Sb$_x$Te$_4$

Elemental substitution is a proven method of Fermi level tuning in topological insulators, which is needed for device applications. Through static and time resolved photoemission, we show that in MnBi$_2$Te$_4$, elemental substitution of Bi with Sb indeed tunes the Fermi level towards the bulk band gap, making the material charge neutral at 35\% Sb concentration. For the first time, we are able to directly probe the excited state band structure at this doping level, and their dynamics, which show that the decay channels at the Fermi level are severely restricted. However, elemental substitution widens the surface state gap, which we attribute to the increase in antisite defects resulting from Sb substitution. This hypothesis is supported by DFT calculations that include defects, which show a sensitivity of the topological surface state to their inclusion. Our results emphasize the need for defect control if MnBi$_{2-x}$Sb$_x$Te$_4$ is to be used for device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Real-space visualization of short-range antiferromagnetic correlations in a magnetically enhanced thermoelectric

Short-range magnetic correlations can significantly increase the thermopower of magnetic semiconductors, representing a noteworthy development in the decades-long effort to develop high-performance thermoelectric materials. Here, we reveal the nature of the thermopower-enhancing magnetic correlations in the antiferromagnetic semiconductor MnTe. Using magnetic pair distribution function analysis of neutron scattering data, we obtain a detailed, real-space view of robust, nanometer-scale, antiferromagnetic correlations that persist into the paramagnetic phase above the Néel temperature $T_{\mathrm{N}}$ = 307 K. The magnetic correlation length in the paramagnetic state is significantly longer along the crystallographic $c$ axis than within the $ab$ plane, pointing to anisotropic magnetic interactions. Ab initio calculations of the spin-spin correlations using density functional theory in the disordered local moment approach reproduce this result with quantitative accuracy. These findings constitute the first real-space picture of short-range spin correlations in a magnetically enhanced thermoelectric and inform future efforts to optimize thermoelectric performance by magnetic means.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

The Role of the Third Dimension in Searching Majorana Fermions in $α$-RuCl$_3$ via Phonons

Understanding phonons in $α$-RuCl$_3$ is critical to analyze the controversy around the observation of the half-integer thermal quantum Hall effect. While many studies have focused on the magnetic excitations in $α$-RuCl$_3$, its vibrational excitation spectrum has remained relatively unexplored. We investigate the phonon structure of $α$-RuCl$_3$ via inelastic neutron scattering experiments and density functional theory calculations. Our results show excellent agreement between experiment and first principles calculations. After validating our theoretical model, we extrapolate the low energy phonon properties. We find that the phonons in $α$-RuCl$_3$ that either propagate or vibrate in the out-of-plane direction have significantly reduced velocities, and therefore have the potential to dominate the observability of the elusive half integer plateaus in the thermal Hall conductance. In addition, we use low-energy interlayer phonons to resolve the low temperature stacking structure of our large crystal of $α$-RuCl$_3$, which we find to be consistent with that of the $R\bar{3}$ space group, in agreement with neutron diffraction.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Transparent Josephson Junctions in Higher-Order Topological Insulator WTe2 via Pd Diffusion

Highly transparent superconducting contacts to a topological insulator (TI) remain a persistent challenge on the route to engineer topological superconductivity. Recently, the higher-order TI WTe$_2$ was shown to turn superconducting when placed on palladium (Pd) bottom contacts, demonstrating a promising material system in pursuing this goal. Here, we report the diffusion of Pd into WTe$_2$ and the formation of superconducting PdTe$_x$ as the origin of observed superconductivity. We find an atomically sharp interface in vertical direction to the van der Waals layers between the diffusion crystal and its host crystal, forming state-of-the-art superconducting contacts to a TI. The diffusion is discovered to be non-uniform along the width of the WTe$_2$ crystal, with a greater extend along the edges compared to the bulk. The potential of this contacting method is highlighted in transport measurements on Josephson junctions by employing external superconducting leads.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Electric control of a canted-antiferromagnetic Chern insulator

The interplay between band topology and magnetism can give rise to exotic states of matter. For example, magnetically doped topological insulators can realize a Chern insulator that exhibits quantized Hall resistance at zero magnetic field. While prior works have focused on ferromagnetic systems, little is known about band topology and its manipulation in antiferromagnets. Here, we report that MnBi$_2$Te$_4$ is a rare platform for realizing a canted-antiferromagnetic (cAFM) Chern insulator with electrical control. We show that the Chern insulator state with Chern number $C = 1$ appears as soon as the AFM to canted-AFM phase transition happens. The Chern insulator state is further confirmed by observing the unusual transition of the $C = 1$ state in the cAFM phase to the $C = 2$ orbital quantum Hall states in the magnetic field induced ferromagnetic phase. Near the cAFM-AFM phase boundary, we show that the Chern number can be toggled on and off by applying an electric field alone. We attribute this switching effect to the electrical field tuning of the exchange gap alignment between the top and bottom surfaces. Our work paves the way for future studies on topological cAFM spintronics and facilitates the development of proof-of-concept Chern insulator devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Lattice and magnetic dynamics in YVO$_{3}$ Mott insulator studied by neutron scattering and first-principles calculations

The Mott insulator YVO$_{3}$ with $T_{N}$ = 118 K is revisited to explore the role of spin, lattice and orbital correlations across the multiple structural and magnetic transitions observed as a function of temperature. Upon cooling, the crystal structure changes from orthorhombic to monoclinic at 200 K, and back to orthorhombic at 77 K, followed by magnetic transitions. From the paramagnetic high temperature phase, C-type ordering is first observed at 118 K, followed by a G-type spin re-orientation transition at 77 K. The dynamics of the transitions were investigated via inelastic neutron scattering and first principles calculations. An overall good agreement between the neutron data and calculated spectra was observed. From the magnon density of states, the magnetic exchange constants were deduced to be $J_{ab}$ = $J_{c}$ = -5.8 meV in the G-type spin phase, and $J_{ab}$ = -3.8 meV, $J_{c}$ = 7.6 meV at 80 K and $J_{ab}$ = -3.0 meV, $J_{c}$ = 6.0 meV at 100 K in the C-type spin phase. Paramagnetic scattering was observed in the spin ordered phases, well below the C-type transition temperature, that continuously increased above the transition. Fluctuations in the temperature dependence of the phonon density of states were observed between 50 and 80 K as well, coinciding with the G-type to C-type transition. These fluctuations are attributed to optical oxygen modes above 40 meV, from first principles calculations. In contrast, little change in the phonon spectra is observed across $T_{N}$.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Magnetostriction of α-RuCl3 flakes in the zigzag phase

Motivated by the possibility of an intermediate U(1) quantum spin liquid phase in out-of-plane magnetic fields and enhanced magnetic fluctuations in exfoliated α-RuCl3 flakes, we study magneto-Raman spectra of exfoliated multilayer α-RuCl3 in out-of-plane magnetic fields of -6 T to 6 T at temperatures of 670 mK - 4 K. While the literature currently suggests that bulk α-RuCl3 is in an antiferromagnetic zigzag phase with R3bar symmetry at low temperature, we do not observe R3bar symmetry in exfoliated α-RuCl3 at low temperatures. While we saw no magnetic field driven transitions, the Raman modes exhibit unexpected stochastic shifts in response to applied magnetic field that are above the uncertainties inferred from Bayesian analysis. These stochastic shifts are consistent with the emergence of magnetostrictive interactions in exfoliated α-RuCl3.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Nanometer-scale lateral p-n junctions in graphene/$α$-RuCl$_3$ heterostructures

The ability to create high-quality lateral p-n junctions at nanometer length scales is essential for the next generation of two-dimensional (2D) electronic and plasmonic devices. Using a charge-transfer heterostructure consisting of graphene on $α$-RuCl$_3$, we conduct a proof-of-concept study demonstrating the existence of intrinsic nanoscale lateral p-n junctions in the vicinity of graphene nanobubbles. Our multi-pronged experimental approach incorporates scanning tunneling microscopy (STM) and spectroscopy (STS) and scattering-type scanning near-field optical microscopy ($\textit{s}$-SNOM) in order to simultaneously probe both the electronic and optical responses of nanobubble p-n junctions. Our STM and STS results reveal that p-n junctions with a band offset of more than 0.6 eV can be achieved over lateral length scale of less than 3 nm, giving rise to a staggering effective in-plane field in excess of 10$^8$ V/m. Concurrent $\textit{s}$-SNOM measurements confirm the utility of these nano-junctions in plasmonically-active media, and validate the use of a point-scatterer formalism for modeling surface plasmon polaritons (SPPs). Model $\textit{ab initio}$ density functional theory (DFT) calculations corroborate our experimental data and reveal a combination of sub-angstrom and few-angstrom decay processes dictating the dependence of charge transfer on layer separation. Our study provides experimental and conceptual foundations for the use of charge-transfer interfaces such as graphene/$α$-RuCl$_3$ to generate p-n nano-junctions.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Thermal and magnetoelastic properties of α-RuCl3 in the field-induced low temperature states

We discuss the implications that new magnetocaloric, thermal expansion and magnetostriction data in $α$-RuCl$_{3}$ single crystals have on its temperature-field phase diagram and uncover the magnetic-field dependence of an apparent energy gap structure $Δ(H)$ that evolves when the low temperature antiferromagnetic order is suppressed. We show that, depending on how the thermal expansion data is modeled, $Δ(H)$ can show a cubic field dependence and remain finite at zero field, consistent with the pure Kitaev model hosting itinerant Majorana fermions and localized $\mathbb{Z}_{2}$ fluxes. Our magnetocaloric effect data provides, below $1\,\mathrm{K}$, unambiguous evidence for dissipative phenomena at $H_{\mathrm{c}}$, smoking gun for a first order phase transition. Our results, on the other hand, show little support for a phase transition from a QSL to a polarized paramagnetic state above $H_{\mathrm{c}}$.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Topological surface currents accessed through reversible hydrogenation of the three-dimensional bulk

Hydrogen, the smallest and most abundant element in nature, can be efficiently incorporated within a solid and drastically modify its electronic state - it has been known to induce novel magnetoelectric effects in complex perovskites and modulate insulator-to-metal transition in a correlated Mott oxide. Here we demonstrate that hydrogenation resolves an outstanding challenge in chalcogenide classes of three-dimensional (3D) topological insulators and magnets - the control of intrinsic bulk conduction that denies access to quantum surface transport. With electrons donated by a reversible binding of H+ ions to Te(Se) chalcogens, carrier densities are easily changed by over 10^20 cm^-3, allowing tuning the Fermi level into the bulk bandgap to enter surface/edge current channels. The hydrogen-tuned topological materials are stable at room temperature and tunable disregarding bulk size, opening a breadth of platforms for harnessing emergent topological states.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Monolayer Semiconductor Auger Detector

Auger recombination in semiconductors is a many-body phenomenon in which recombination of electrons and holes is accompanied by excitation of other charge carriers. Being nonradiative, it is detrimental to light emission. The excess energy of the excited carriers is normally rapidly converted to heat, making Auger processes difficult to probe directly. Here, we employ a technique in which the Auger-excited carriers are detected by their ability to tunnel out of the semiconductor through a thin barrier, generating a current. We employ vertical van der Waals (vdW) heterostructures with monolayer WSe2 as the semiconductor and the wide band gap hexagonal boron nitride (hBN) as the tunnel barrier to preferentially transmit high-energy Auger-excited carriers to a graphite electrode. The unambiguous signatures of Auger processes are a rise in the photocurrent when excitons are created by resonant excitation, and negative differential photoconductance resulting from the shifts of the exciton resonances with voltage. We detect holes Auger-excited by both neutral and charged excitons, and find that the Auger scattering is surprisingly strong under weak excitation. The selective extraction of Auger carriers at low, controlled carrier densities that is enabled by vdW heterostructures illustrates an important addition to the techniques available for probing relaxation processes in 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Native Defects in Antiferromagnetic Topological Insulator MnBi$_2$Te$_4$

Using scanning tunneling microscopy and spectroscopy, we visualized the native defects in antiferromagnetic topological insulator $\mathrm{MnBi_2Te_4}$. Two native defects $\mathrm{Mn_{Bi}}$ and $\mathrm{Bi_{Te}}$ antisites can be well resolved in the topographic images. $\mathrm{Mn_{Bi}}$ tend to suppress the density of states at conduction band edge. Spectroscopy imaging reveals a localized peak-like local density of state at $\sim80$~meV below the Fermi energy. A careful inspection of topographic and spectroscopic images, combined with density functional theory calculation, suggests this results from $\mathrm{Bi_{Mn}}$ antisites at Mn sites. The random distribution of $\mathrm{Mn_{Bi}}$ and $\mathrm{Bi_{Mn}}$ antisites results in spatial fluctuation of local density of states near the Fermi level in $\mathrm{MnBi_2Te_4}$.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

One-Dimensional Edge Transport in Few-Layer WTe$_2$

WTe$_2$ is a layered transitional-metal dichalcogenide (TMD) with a number of intriguing topological properties. Recently, WTe$_2$ has been predicted to be a higher-order topological insulator (HOTI) with topologically protected hinge states along the edges. The gapless nature of WTe$_2$ complicates the observation of one-dimensional (1D) topological states in transport due to their small contribution relative to the bulk. Here, we study the behavior of the Josephson effect in magnetic field to distinguish edge from bulk transport. The Josephson effect in few-layer WTe$_2$ reveals 1D states residing on the edges and steps. Moreover, our data demonstrates a combination of Josephson transport properties observed solely in another HOTI - bismuth, including Josephson transport over micrometer distances, extreme robustness in a magnetic field, and nonsinusoidal current-phase relation (CPR). Our observations strongly suggest the topological origin of the 1D states and that few-layer WTe$_2$ is a HOTI.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Realizing gapped surface states in magnetic topological insulator MnBi$_{2-x}$Sb$_{x}$Te$_{4}$

The interplay between magnetism and non-trivial topology in magnetic topological insulators (MTI) is expected to give rise to a variety of exotic topological quantum phenomena, such as the quantum anomalous Hall (QAH) effect and the topological axion states. A key to assessing these novel properties is to tune the Fermi level in the exchange gap of the Dirac surface band. MnBi$_2$Te$_4$ possesses non-trivial band topology with intrinsic antiferromagnetic (AFM) state that can enable all of these quantum states, however, highly electron-doped nature of the MnBi$_2$Te$_4$ crystals obstructs the exhibition of the gapped topological surface states. Here, we tailor the material through Sb-substitution to reveal the gapped surface states in MnBi$_{2-x}$Sb$_{x}$Te$_{4}$ (MBST). By shifting the Fermi level into the bulk band gap of MBST, we access the surface states and show a band gap of 50 meV at the Dirac point from quasi-particle interference (QPI) measured by scanning tunneling microscopy/spectroscopy (STM/STS). Surface-dominant conduction is confirmed below the Néel temperature through transport spectroscopy measured by multiprobe STM. The surface band gap is robust against out-of-plane magnetic field despite the promotion of field-induced ferromagnetism. The realization of bulk-insulating MTI with the large exchange gap offers a promising platform for exploring emergent topological phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Robust A-type order and spin-flop transition on the surface of the antiferromagnetic topological insulator MnBi$_2$Te$_4$

Here we present microscopic evidence of the persistence of uniaxial A-type antiferromagnetic order to the surface layers of MnBi$_2$Te$_4$ single crystals using magnetic force microscopy. Our results reveal termination-dependent magnetic contrast across both surface step edges and domain walls, which can be screened by thin layers of soft magnetism. The robust surface A-type order is further corroborated by the observation of termination-dependent surface spin-flop transitions, which have been theoretically proposed decades ago. Our results not only provide key ingredients for understanding the electronic properties of the antiferromagnetic topological insulator MnBi$_2$Te$_4$, but also open a new paradigm for exploring intrinsic surface metamagnetic transitions in natural antiferromagnets.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin dynamics and a nearly continuous magnetic phase transition in an entropy-stabilized oxide antiferromagnet

The magnetic order and the spin dynamics in the antiferromagnetic entropy-stabilized oxide (Mg$_{0.2}$Co$_{0.2}$Ni$_{0.2}$Cu$_{0.2}$Zn$_{0.2}$)O (MgO-ESO) have been studied using muon spin relaxation ($μ$SR) and inelastic neutron scattering. We find that antiferromagnetic order develops gradually in the sample volume as it is cooled below 140 K, becoming fully ordered around 100 K. The spin dynamics show a critical slowing down in the vicinity of the transition, and the magnetic order parameter grows continuously in the ordered state. These results indicate that the antiferromagnetic transition is continuous but proceeds with a Gaussian distribution of ordering temperatures. The magnetic contribution to the specific heat determined from inelastic neutron scattering likewise shows a broad feature centered around 120 K. High-resolution inelastic neutron scattering further reveals an initially gapped spectrum at low temperature which sees an increase in a quasielastic contribution upon heating until the ordering temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Surface Superconductivity in the type II Weyl Semimetal TaIrTe4

The search for unconventional superconductivity in Weyl semimetal materials is currently an exciting pursuit, since such superconducting phases could potentially be topologically nontrivial and host exotic Majorana modes. The layered material TaIrTe4 is a newly predicted time-reversal invariant type II Weyl semimetal with minimum number of Weyl points. Here, we report the discovery of surface superconductivity in Weyl semimetal TaIrTe4. Our scanning tunneling microscopy/spectroscopy (STM/S) visualizes Fermi arc surface states of TaIrTe4 that are consistent with the previous angle-resolved photoemission spectroscopy (ARPES) results. By a systematic study based on STS at ultralow temperature, we observe uniform superconducting gaps on the sample surface. The superconductivity is further confirmed by electrical transport measurements at ultralow temperature, with an onset transition temperature (Tc) up to 1.54 K being observed. The normalized upper critical field h*(T/Tc) behavior and the stability of the superconductivity against the ferromagnet indicate that the discovered superconductivity is unconventional with the p-wave pairing. The systematic STS, thickness and angular dependent transport measurements reveal that the detected superconductivity is quasi-one-dimensional (quasi-1D) and occurs in the surface states. The discovery of the surface superconductivity in TaIrTe4 provides a new novel platform to explore topological superconductivity and Majorana modes.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tuning Fermi Levels in Intrinsic Antiferromagnetic Topological Insulators MnBi2Te4 and MnBi4Te7 by Defect Engineering and Chemical Doping

MnBi2Te4 and MnBi4Te7 are intrinsic antiferromagnetic topological insulators, offering a promising materials platform for realizing exotic topological quantum states. However, high densities of intrinsic defects in these materials not only cause bulk metallic conductivity, preventing the measurement of quantum transport in surface states, but may also affect magnetism and topological properties. In this paper, we show by density functional theory calculations that the strain induced by the internal heterostructure promotes the formation of large-size-mismatched antisite defect BiMn in MnBi2Te4; such strain is further enhanced in MnBi4Te7, giving rise to even higher BiMn density. The abundance of intrinsic BiMn donors results in degenerate n-type conductivity under the Te-poor growth condition. Our calculations suggest that growths in a Te-rich condition can lower the Fermi level, which is supported by our transport measurements. We further show that the internal strain can also enable efficient doping by large-size-mismatched substitutional NaMn acceptors, which can compensate BiMn donors and lower the Fermi level. Na doping may pin the Fermi level inside the bulk band gap even at the Te-poor limit in MnBi2Te4. Furthermore, facile defect formation in MnSb2Te4 and its implication in Sb doping in MnBi2Te4 as well as the defect segregation in MnBi4Te7 are discussed. The defect engineering and doping strategies proposed in this paper will stimulate further studies for improving synthesis and for manipulating magnetic and topological properties in MnBi2Te4, MnBi4Te7, and related compounds.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Valley Phonons and Exciton Complexes in a Monolayer Semiconductor

The coupling between spin, charge, and lattice degrees of freedom plays an important role in a wide range of fundamental phenomena. Monolayer semiconducting transitional metal dichalcogenides have emerged as an outstanding platform for studying these coupling effects because they possess unique spin-valley locking physics for hosting rich excitonic species and the reduced screening for strong Coulomb interactions. Here, we report the observation of multiple valley phonons, phonons with momentum vectors pointing to the corners of the hexagonal Brillouin zone, and the resulting exciton complexes in the monolayer semiconductor WSe2. From Lande g-factor and polarization analyses of photoluminescence peaks, we find that these valley phonons lead to efficient intervalley scattering of quasi particles in both exciton formation and relaxation. This leads to a series of photoluminescence peaks as valley phonon replicas of dark trions. Using identified valley phonons, we also uncovered an intervalley exciton near charge neutrality, and extract its short-range electron-hole exchange interaction to be about 10 meV. Our work not only identifies a number of previously unknown 2D excitonic species, but also shows that monolayer WSe2 is a prime candidate for studying interactions between spin, pseudospin, and zone-edge phonons.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Gapless Dirac surface states in the antiferromagnetic topological insulator MnBi2Te4

We use high-resolution, tunable angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations to study the electronic properties of single crystals of MnBi2Te4, a material that was predicted to be the first intrinsic antiferromagnetic (AFM) topological insulator. We observe both bulk and surface bands in the electronic spectra, in reasonable agreement with the DFT calculations results. In striking contrast to the earlier literatures showing a full gap opening between two surface band manifolds along (0001) direction, we observed a gapless Dirac cone remain protected in MnBi2Te4 across the AFM transition (TN = 24 K). Our data also reveal the existence of a second Dirac cone closer to the Fermi level, predicted by band structure calculations. Whereas the surface Dirac cones seem to be remarkably insensitive to the AFM ordering, we do observe splitting of the bulk band that develops below the TN . Having a moderately high ordering temperature, MnBi2Te4 provides a unique platform for studying the interplay between topology and magnetic ordering.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Intrinsic axion insulating behavior in antiferromagnetic MnBi$_6$Te$_{10}$

A striking feature of time reversal symmetry (TRS) protected topological insulators (TIs) is that they are characterized by a half integer quantum Hall effect on the boundary when the surface states are gapped by time reversal breaking perturbations. While time reversal symmetry (TRS) protected TIs have become increasingly under control, magnetic analogs are still largely unexplored territories with novel rich structures. In particular, topological magnetic insulators can also host a quantized axion term in the presence of lattice symmetries. Since these symmetries are naturally broken on the boundary, the surface states can develop a gap without external manipulation. In this work, we combine theoretical analysis, density functional calculations and experimental evidence to reveal intrinsic axion insulating behavior in MnBi6Te10. The quantized axion term arises from the simplest possible mechanism in the antiferromagnetic regime where it is protected by inversion symmetry and a fractional translation symmetry. The anticipated gapping of the Dirac surface state at the edge is subsequently experimentally established using Angle Resolved Spectroscopy. As a result, this system provides the magnetic analogue of the simplest TRS protected TI with a single, gapped Dirac cone at the surface.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Magnetic imaging of antiferromagnetic domain walls

The control of domain walls or spin textures is crucial for spintronic applications of antiferromagnets. Despite many efforts, it has been challenging to directly visualize antiferromagnetic domains or domain walls with nanoscale resolution, especially in magnetic field. Here, we report magnetic imaging of domain walls in several uniaxial antiferromagnets, the topological insulator MnBi$_2$Te$_4$ family and the Dirac semimetal EuMnBi$_2$, using cryogenic magnetic force microscopy (MFM). Our MFM results reveal higher magnetic susceptibility or net moments inside the domain walls than in domains. Domain walls in these antiferromagnets form randomly with strong thermal and magnetic field dependences. The direct visualization of domain walls and domain structure in magnetic field will not only facilitate the exploration of intrinsic phenomena in topological antiferromagnets, but also open a new path toward control and manipulation of domain walls or spin textures in functional antiferromagnets.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Proximity-induced superconducting gap in the quantum spin Hall edge state of monolayer WTe$_2$

The quantum spin Hall (QSH) state was recently demonstrated in monolayers of the transition metal dichalcogenide 1T'-WTe$_2$ and is characterized by a band gap in the two-dimensional (2D) interior and helical one-dimensional (1D) edge states. Inducing superconductivity in the helical edge states would result in a 1D topological superconductor, a highly sought-after state of matter. In the present study, we use a novel dry-transfer flip technique to place atomically-thin layers of WTe$_2$ on a van der Waals superconductor, NbSe$_2$. Using scanning tunneling microscopy and spectroscopy (STM/STS), we demonstrate atomically clean surfaces and interfaces and the presence of a proximity-induced superconducting gap in the WTe$_2$ for thicknesses from a monolayer up to 7 crystalline layers. At the edge of the WTe$_2$ monolayer, we show that the superconducting gap coexists with the characteristic spectroscopic signature of the QSH edge state. Taken together, these observations provide conclusive evidence for proximity-induced superconductivity in the QSH edge state in WTe$_2$, a crucial step towards realizing 1D topological superconductivity and Majorana bound states in this van der Waals material platform.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Directional Interlayer Spin-Valley Transfer in Two-Dimensional Heterostructures

Van der Waals heterostructures formed by two different monolayer semiconductors have emerged as a promising platform for new optoelectronic and spin/valleytronic applications. In addition to its atomically thin nature, a two-dimensional semiconductor heterostructure is distinct from its three-dimensional counterparts due to the unique coupled spin-valley physics of its constituent monolayers. Here, we report the direct observation that an optically generated spin-valley polarization in one monolayer can be transferred between layers of a two-dimensional MoSe2-WSe2 heterostructure. Using nondegenerate optical circular dichroism spectroscopy, we show that charge transfer between two monolayers conserves spin-valley polarization and is only weakly dependent on the twist angle between layers. Our work points to a new spin-valley pumping scheme in nanoscale devices, provides a fundamental understanding of spin-valley transfer across the two-dimensional interface, and shows the potential use of two-dimensional semiconductors as a spin-valley generator in 2D spin/valleytronic devices for storing and processing information.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Expansion of a Valley-Polarized Exciton Cloud in a 2D Heterostructure

Heterostructures comprising different monolayer semiconductors provide a new system for fundamental science and device technologies, such as in the emerging field of valleytronics. Here, we realize valley-specific interlayer excitons in monolayer WSe2-MoSe2 vertical heterostructures. We create interlayer exciton spin-valley polarization by circularly polarized optical pumping and determine a valley lifetime of 40 nanoseconds. This long-lived polarization enables the visualization of the expansion of a valley-polarized exciton cloud over several microns. The spatial pattern of the polarization evolves into a ring with increasing exciton density, a manifestation of valley exciton exchange interactions. Our work lays a foundation for quantum optoelectronics and valleytronics based on interlayer excitons in van der Waals heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Interference Evidence for Rashba-Type Spin-Split on Semimetallic WTe2 Surface

Semimetallic tungsten ditelluride (WTe2) displays an extremely large non-saturating magnetoresistance (XMR), which is the subject of intense interest. This phenomenon is thought to arise from the combination of perfect n-p charge compensation with low carrier densities in WTe2 and presumably details of its band structure. Recently, "spin texture" induced by strong spin-orbital coupling (SOC) has been observed in WTe2 by angle-resolved photoemission spectroscopy (ARPES). This provides a mechanism for protecting backscattering for the states involved and thus was proposed to play an important role in the XMR of WTe2. Here, based on our density functional calculations for bulk WTe2, we found a strong Rashba spin-orbit effect in the calculated band structure due to its non-centrosymmetric structure. This splits bands and two-fold spin degeneracy of bands is lifted. A prominent Umklapp interference pattern (a spectroscopic feature with involving reciprocal lattice vectors) can be observed by scanning tunneling microscopic (STM) measurements on WTe2 surface at 4.2 K. This differs distinctly from the surface atomic structure demonstrated at 77 K. The energy dependence of Umklapp interference shows a strong correspondence with densities of states integrated from ARPES measurement, manifesting a fact that the bands are spin-split on the opposites side of Gamma point. Spectroscopic survey reveals the ratio of electron/hole asymmetry changes alternately with lateral locations along b axis, providing a microscopic picture for double-carrier transport of semimetallic WTe2. The calculated band structure and Fermi surface is further supported by our ARPES results and Shubnikov-de Haas (SdH) oscillations measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors

We report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutionally doped TMDs as drain/source contacts and TMDs with no intentional doping as channel materials. We demonstrate that few-layer WSe2 field-effect transistors (FETs) with 2D/2D contacts exhibit low contact resistances of ~ 0.3 k ohm.um, high on/off ratios up to > 109, and high drive currents exceeding 320 uA um-1. These favorable characteristics are combined with a two-terminal field-effect hole mobility ~ 2x102 cm2 V-1 s-1 at room temperature, which increases to >2x103 cm2 V-1 s-1 at cryogenic temperatures. We observe a similar performance also in MoS2 and MoSe2 FETs with 2D/2D drain and source contacts. The 2D/2D low-resistance ohmic contacts presented here represent a new device paradigm that overcomes a significant bottleneck in the performance of TMDs and a wide variety of other 2D materials as the channel materials in post-silicon electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Anisotropic Magnetotransport and Exotic Longitudinal Linear Magnetoresistance in WTe2 Crystals

WTe2 semimetal, as a typical layered transition-metal dichalcogenide, has recently attracted much attention due to the extremely large, non-saturating parabolic magnetoresistance in perpendicular field. Here, we report a systematic study of the angular dependence of the magnetoresistance in WTe2 single crystal. The violation of the Kohler rule and a significant anisotropic magnetotransport behavior in different magnetic field directions are observed. Surprisingly, when the applied field is parallel to the tungsten chains of WTe2, an exotic large longitudinal linear magnetoresistance as high as 1200% at 15 T and 2 K is identified. Violation of the Kohler rule in transverse magnetoresistance can be understood based on a dual effect of the excitons formation and thermal activation, while large longitudinal linear magnetoresistance reflects perfectly the scattering and nesting of quasi-1D nature of this balanced hole-electron system. Our work will stimulate studies of such double-carrier correlated material and corresponding quantum physics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Effect of Chemical Pressure on High Temperature Ferrimagnetic Double Perovskites Sr2CrOsO6 and Ca2CrOsO6

The ordered double perovskites Sr2CrOsO6 and Ca2CrOsO6 have been synthesized and characterized with neutron powder diffraction, electrical transport measurements, and high field magnetization experiments. Sr2CrOsO6 and Ca2CrOsO6 crystallize with R-3 and P21/n space group symmetry, respectively. Both materials are found to be ferrimagnetic insulators with saturation magnetizations near 0.2 μB. Sr2CrOsO6 orders at 660 K, showing non-monotonic magnetization temperature dependence, while Ca2CrOsO6 orders at 490 K and does not show non-monotonic behavior. Evidence for a theoretically predicted canted magnetic structure in Sr2CrOsO6 is sought and not found.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Effects of chemical pressure on the magnetic ground states of the osmate double perovskites SrCaCoOsO6 and Ca2CoOsO6

The magnetic ground state in the double perovskite system Sr2-xCaxCoOsO6 changes from an antiferromagnet (x = 0), to a spin glass (x = 1), to a ferrimagnet (x = 2) as the Ca content increases. This crossover is driven by chemical pressure effects that control the relative strength of magnetic exchange interactions. The synthesis, crystal structure, and magnetism of SrCaCoOsO6 and Ca2CoOsO6 are investigated and compared with Sr2CoOsO6. Both compounds adopt a monoclinic crystal structure with rock salt ordering of Co2+ and Os6+ and a-a-b+ octahedral tilting, but the average Co-O-Os bond angle evolves from 158.0(3) degrees in SrCaCoOsO6 to 150.54(9) degrees in Ca2CoOsO6 as the smaller Ca2+ ion replaces Sr2+. While this change may seem minor it has a profound effect on the magnetism, changing the magnetic ground state from antiferromagnetic in Sr2CoOsO6 (TN1 = 108 K, TN2 = 70 K), to a spin glass in SrCaCoOsO6 (Tf1 = 32 K, Tf2 = 13 K), to ferrimagnetic in Ca2CoOsO6 (TC = 145 K). In the first two compounds the observation of two transitions is consistent with weak coupling between the Co and Os sublattices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electrical Control of Second-Harmonic Generation in a WSe2 Monolayer Transistor

Nonlinear optical frequency conversion, in which optical fields interact with a nonlinear medium to produce new field frequencies, is ubiquitous in modern photonic systems. However, the nonlinear electric susceptibilities that give rise to such phenomena are often challenging to tune in a given material, and so far, dynamical control of optical nonlinearities remains confined to research labs as a spectroscopic tool. Here, we report a mechanism to electrically control second-order optical nonlinearities in monolayer WSe2, an atomically thin semiconductor. We show that the intensity of second-harmonic generation at the A-exciton resonance is tunable by over an order of magnitude at low temperature and nearly a factor of 4 at room temperature through electrostatic doping in a field-effect transistor. Such tunability arises from the strong exciton charging effects in monolayer semiconductors, which allow for exceptional control over the oscillator strengths at the exciton and trion resonances. The exciton-enhanced second-harmonic generation is counter-circularly polarized to the excitation laser, arising from the combination of the two-photon and one-photon valley selection rules that have opposite helicity in the monolayer. Our study paves the way towards a new platform for chip-scale, electrically tunable nonlinear optical devices based on two-dimensional semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electron-phonon coupling and thermal transport in the thermoelectric compound $\mathrm{Mo_3Sb_{7-x}Te_x}$

Phonon properties of $\mathrm{Mo_3Sb_{7-x}Te_x}$ ($x=0,1.5, 1.7$), a potential high-temperature thermoelectric material, have been studied with inelastic neutron and x-ray scattering, and with first-principles simulations. The substitution of Te for Sb leads to pronounced changes in the electronic structure, local bonding, phonon density of states (DOS), dispersions, and phonon lifetimes. Alloying with tellurium shifts the Fermi level upward, near the top of the valence band, resulting in a strong suppression of electron-phonon screening, and a large overall stiffening of interatomic force-constants. The suppression in electron-phonon coupling concomitantly increases group velocities and suppresses phonon scattering rates, surpassing the effects of alloy-disorder scattering, and resulting in a surprising increased lattice thermal conductivity in the alloy. We also identify that the local bonding environment changes non-uniformly around different atoms, leading to variable perturbation strengths for different optical phonon branches. The respective roles of changes in phonon group velocities and phonon lifetimes on the lattice thermal conductivity are quantified. Our results highlight the importance of the electron-phonon coupling on phonon mean-free-paths in this compound, and also estimates the contributions from boundary scattering, umklapp scattering, and point-defect scattering.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Neutron-scattering measurements of the spin excitations in LaFeAsO and Ba(Fe$_{0.953}$Co$_{0.047}$)$_{2}$As$_{2}$: Evidence for a sharp enhancement of spin fluctuations by nematic order

Inelastic neutron scattering was employed to investigate the impact of electronic nematic order on the magnetic spectra of LaFeAsO and Ba(Fe$_{0.953}$Co$_{0.047}$)$_{2}$As$_{2}$. These materials are ideal to study the paramagnetic-nematic state, since the nematic order, signaled by the tetragonal-to-orthorhombic transition at $T_{\rm S}$, sets in well above the stripe antiferromagnetic ordering at $T_{\rm N}$. We find that the temperature-dependent dynamic susceptibility displays an anomaly at $T_{\rm S}$ followed by a sharp enhancement in the spin-spin correlation length, revealing a strong feedback effect of nematic order on the low-energy magnetic spectrum. Our findings can be consistently described by a model that attributes the structural/nematic transition to magnetic fluctuations, and unveils the key role played by nematic order in promoting the long-range stripe antiferromagnetic order in iron pnictides.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Population pulsation resonances of excitons in monolayer MoSe2 with sub 1 μeV linewidth

Monolayer transition metal dichalcogenides, a new class of atomically thin semiconductors, possess optically coupled 2D valley excitons. The nature of exciton relaxation in these systems is currently poorly understood. Here, we investigate exciton relaxation in monolayer MoSe2 using polarization-resolved coherent nonlinear optical spectroscopy with high spectral resolution. We report strikingly narrow population pulsation resonances with two different characteristic linewidths of 1 μeV and <0.2 μeV at low-temperature. These linewidths are more than three orders of magnitude narrower than the photoluminescence and absorption linewidth, and indicate that a component of the exciton relaxation dynamics occurs on timescales longer than 1 ns. The ultra-narrow resonance (<0.2 μeV) emerges with increasing excitation intensity, and implies the existence of a long-lived state whose lifetime exceeds 6 ns.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Structural and magnetic phase transitions in EuTi1-xNbxO3

We investigate the structural and magnetic phase transitions in EuTi1-xNbxO3 with synchrotron powder X-ray diffraction (XRD), resonant ultrasound spectroscopy (RUS), and magnetization measurements. Upon Nb-doping, the Pm-3m to I4/mcm structural transition shifts to higher temperatures and the room temperature lattice parameter increases while the magnitude of the octahedral tilting decreases. In addition, Nb substitution for Ti destabilizes the antiferromagnetic ground state of the parent compound and long range ferromagnetic order is observed in the samples containing more than 10% Nb. The structural transition in pure and doped compounds is marked by a step-like softening of the elastic moduli in a narrow temperature interval near TS, which resembles that of SrTiO3 and can be adequately modeled using the Landau free energy model employing the same coupling between strain and octahedral tilting order parameter as previously used to model SrTiO3.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

The Chiral Anomaly and Ultrahigh Mobility in Crystalline HfTe5

HfTe5 is predicted to be a promising platform for studying topological phases. Here through an electrical transport study, we present the first observation of chiral anomaly and ultrahigh mobility in HfTe5 crystals. Negative magneto-resistivity in HfTe5 is observed when the external magnetic and electrical fields are parallel (B//E) and quickly disappears once B deviates from the direction of E. Quantitative fitting further confirms the chiral anomaly as the underlying physics. Moreover, by analyzing the conductivity tensors of longitudinal and Hall traces, ultrahigh mobility and ultralow carrier density are revealed in HfTe5, which paves the way for potential electronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Trion Formation Dynamics in Monolayer Transition Metal Dichalcogenides

We report charged exciton (trion) formation dynamics in doped monolayer transition metal dichalcogenides (TMDs), specifically molybdenum diselenide (MoSe2), using resonant two-color pump-probe spectroscopy. When resonantly pumping the exciton transition, trions are generated on a picosecond timescale through exciton-electron interaction. As the pump energy is tuned from the high energy to low energy side of the inhomogeneously broadened exciton resonance, the trion formation time increases by ~ 50%. This feature can be explained by the existence of both localized and delocalized excitons in a disordered potential and suggests the existence of an exciton mobility edge in TMDs. The quasiparticle formation and conversion processes are important for interpreting photoluminescence and photoconductivity in TMDs.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Ultra-Low Threshold Monolayer Semiconductor Nanocavity Lasers

Engineering the electromagnetic environment of a nanoscale light emitter by a photonic cavity can significantly enhance its spontaneous emission rate through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter, providing the ultimate low-threshold laser system with small footprint, low power consumption and ultrafast modulation. A state-of-the-art ultra-low threshold nanolaser has been successfully developed though embedding quantum dots into photonic crystal cavity (PhCC). However, several core challenges impede the practical applications of this architecture, including the random positions and compositional fluctuations of the dots, extreme difficulty in current injection, and lack of compatibility with electronic circuits. Here, we report a new strategy to lase, where atomically thin crystalline semiconductor, i.e., a tungsten-diselenide (WSe2) monolayer, is nondestructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PhCC. A new type of continuous-wave nanolaser operating in the visible regime is achieved with an optical pumping threshold as low as 27 nW at 130 K, similar to the value achieved in quantum dot PhCC lasers. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within 1 nm of the PhCC surface. The surface-gain geometry allows unprecedented accessibilities to multi-functionalize the gain, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Coherent Electronic Coupling in Atomically Thin MoSe2

We report the first direct spectroscopic evidence for coherent electronic coupling between excitons and trions in atomically thin transition metal dichalcogenides, specifically monolayer MoSe2. Signatures of coupling appear as isolated cross-peaks in two-color pump-probe spectra, and the lineshape of the peaks reveals that the coupling originates from many-body interactions. Excellent agreement between the experiment and density matrix calculations suggests the formation of a correlated exciton-trion state due to their coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions

Light-emitting diodes are of importance for lighting, displays, optical interconnects, logic and sensors. Hence the development of new systems that allow improvements in their efficiency, spectral properties, compactness and integrability could have significant ramifications. Monolayer transition metal dichalcogenides have recently emerged as interesting candidates for optoelectronic applications due to their unique optical properties. Electroluminescence has already been observed from monolayer MoS2 devices. However, the electroluminescence efficiency was low and the linewidth broad due both to the poor optical quality of MoS2 and to ineffective contacts. Here, we report electroluminescence from lateral p-n junctions in monolayer WSe2 induced electrostatically using a thin boron nitride support as a dielectric layer with multiple metal gates beneath. This structure allows effective injection of electrons and holes, and combined with the high optical quality of WSe2 it yields bright electroluminescence with 1000 times smaller injection current and 10 times smaller linewidth than in MoS2. Furthermore, by increasing the injection bias we can tune the electroluminescence between regimes of impurity-bound, charged, and neutral excitons. This system has the required ingredients for new kinds of optoelectronic devices such as spin- and valley-polarized light-emitting diodes, on-chip lasers, and two-dimensional electro-optic modulators.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

High Mobility WSe2 p- and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

We report the fabrication of both n-type and p-type WSe2 field effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated graphene contacts. Our transport measurements reveal intrinsic channel properties including a metal-insulator transition at a characteristic conductivity close to the quantum conductance e2/h, a high ON/OFF ratio of >107 at 170 K, and large electron and hole mobility of ~200 cm2V-1s-1 at 160 K. Decreasing the temperature to 77 K increases mobility of electrons to ~330 cm2V-1s-1 and that of holes to ~270 cm2V-1s-1. We attribute our ability to observe the intrinsic, phonon limited conduction in both the electron and hole channels to the drastic reduction of the Schottky barriers between the channel and the graphene contact electrodes using IL gating. We elucidate this process by studying a Schottky diode consisting of a single graphene/WSe2 Schottky junction. Our results indicate the possibility to utilize chemically or electrostatically highly doped graphene for versatile, flexible and transparent low-resistance Ohmic contacts to a wide range of quasi-2D semiconductors. KEYWORDS: MoS2, WSe2, field-effect transistors, graphene, Schottky barrier, ionic-liquid gate

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Magnetic Control of Valley Pseudospin in Monolayer WSe2

Local energy extrema of the bands in momentum space, or valleys, can endow electrons in solids with pseudo-spin in addition to real spin. In transition metal dichalcogenides this valley pseudo-spin, like real spin, is associated with a magnetic moment which underlies the valley-dependent circular dichroism that allows optical generation of valley polarization, intervalley quantum coherence, and the valley Hall effect. However, magnetic manipulation of valley pseudospin via this magnetic moment, analogous to what is possible with real spin, has not been shown before. Here we report observation of the valley Zeeman splitting and magnetic tuning of polarization and coherence of the excitonic valley pseudospin, by performing polarization-resolved magneto-photoluminescence on monolayer WSe2. Our measurements reveal both the atomic orbital and lattice contributions to the valley orbital magnetic moment; demonstrate the deviation of the band edges in the valleys from an exact massive Dirac fermion model; and reveal a striking difference between the magnetic responses of neutral and charged valley excitons which is explained by renormalization of the excitonic spectrum due to strong exchange interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate

We report low temperature scanning tunneling microscopy characterization of MoSe2 crystals, and the fabrication and electrical characterization of MoSe2 field-effect transistors on both SiO2 and parylene-C substrates. We find that the multilayer MoSe2 devices on parylene-C show a room temperature mobility close to the mobility of bulk MoSe2 (100 cm2V-1s-1 - 160 cm2V-1s-1), which is significantly higher than that on SiO2 substrate (~50 cm2V-1s-1). The room temperature mobility on both types of substrates are nearly thickness independent. Our variable temperature transport measurements reveal a metal-insulator transition at a characteristic conductivity of e2/h. The mobility of MoSe2 devices extracted from the metallic region on both SiO2 and parylene-C increases up to ~ 500 cm2V-1s-1 as the temperature decreases to ~ 100 K, with the mobility of MoSe2 on SiO2 increasing more rapidly. In spite of the notable variation of charged impurities as indicated by the strongly sample dependent low temperature mobility, the mobility of all MoSe2 devices on SiO2 converges above 200 K, indicating that the high temperature (> 200 K) mobility in these devices is nearly independent of the charged impurities. Our atomic force microscopy study of SiO2 and parylene-C substrates further rule out the surface roughness scattering as a major cause of the substrate dependent mobility. We attribute the observed substrate dependence of MoSe2 mobility primarily to the surface polar optical phonon scattering originating from the SiO2 substrate, which is nearly absent in MoSe2 devices on parylene-C substrate.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures

Two-dimensional (2D) materials, such as graphene1, boron nitride2, and transition metal dichalcogenides (TMDs)3-5, have sparked wide interest in both device physics and technological applications at the atomic monolayer limit. These 2D monolayers can be stacked together with precise control to form novel van der Waals heterostructures for new functionalities2,6-9. One highly coveted but yet to be realized heterostructure is that of differing monolayer TMDs with type II band alignment10-12. Their application potential hinges on the fabrication, understanding, and control of bonded monolayers, with bound electrons and holes localized in individual monolayers, i.e. interlayer excitons. Here, we report the first observation of interlayer excitons in monolayer MoSe2-WSe2 heterostructures by both photoluminescence and photoluminescence excitation spectroscopy. The energy and luminescence intensity of interlayer excitons are highly tunable by an applied vertical gate voltage, implying electrical control of the heterojunction band-alignment. Using time resolved photoluminescence, we find that the interlayer exciton is long-lived with a lifetime of about 1.8 ns, an order of magnitude longer than intralayer excitons13-16. Our work demonstrates the ability to optically pump interlayer electric polarization and provokes the immediate exploration of interlayer excitons for condensation phenomena, as well as new applications in 2D light-emitting diodes, lasers, and photovoltaic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Control of Two-Dimensional Excitonic Light Emission via Photonic Crystal

Monolayers of transition metal dichalcogenides (TMDCs) have emerged as new optoelectronic materials in the two dimensional (2D) limit, exhibiting rich spin-valley interplays, tunable excitonic effects, and strong light-matter interactions. An essential yet undeveloped ingredient for many photonic applications is the manipulation of its light emission. Here we demonstrate the control of excitonic light emission from monolayer tungsten diselenide (WSe2) in an integrated photonic structure, achieved by transferring one monolayer onto a photonic crystal (PhC) with a cavity. In addition to the observation of greatly enhanced (~60 times) photoluminescence of WSe2 and an effectively coupled cavity-mode emission, we are able to redistribute the emitted photons both polarly and azimuthally in the far field through designing PhC structures, as revealed by momentum-resolved microscopy. A 2D optical antenna is thus constructed. Our work suggests a new way of manipulating photons in hybrid 2D photonics, important for future energy efficient optoelectronics and 2D nano-lasers.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electrical Control of Two-Dimensional Neutral and Charged Excitons in a Monolayer Semiconductor

Monolayer group VI transition metal dichalcogenides have recently emerged as semiconducting alternatives to graphene in which the true two-dimensionality (2D) is expected to illuminate new semiconducting physics. Here we investigate excitons and trions (their singly charged counterparts) which have thus far been challenging to generate and control in the ultimate 2D limit. Utilizing high quality monolayer molybdenum diselenide (MoSe2), we report the unambiguous observation and electrostatic tunability of charging effects in positively charged (X+), neutral (Xo), and negatively charged (X-) excitons in field effect transistors via photoluminescence. The trion charging energy is large (30 meV), enhanced by strong confinement and heavy effective masses, while the linewidth is narrow (5 meV) at temperatures below 55 K. This is greater spectral contrast than in any known quasi-2D system. We also find the charging energies for X+ and X- to be nearly identical implying the same effective mass for electrons and holes.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Magnetic structures and the Ce-Fe coupling induced Fe spin reorientation in CeFeAsO single crystal

Neutron and synchrotron resonant X-ray magnetic scattering (RXMS) complemented by heat capacity and resistivity measurements reveal the evolution of the magnetic structures of Fe and Ce sublattices in single crystal CeFeAsO. The RXMS of magnetic reflections at the Ce $L_{\rm II}$-edge shows a magnetic transition that is specific to the Ce antiferromagnetic long-range ordering at $T_\texttt{Ce}\approx$ 4 K with short-range Ce ordering above $T_\texttt{Ce}$, whereas neutron diffraction measurements of a few magnetic reflections indicate a transition at $T^{*}\approx$ 12 K with unusual order parameter. Detailed order parameter measurements on several magnetic reflections by neutrons show a weak anomaly at 4 K which we associate with the Ce ordering. The successive transitions at $T_\texttt{Ce}$ and $T^{*}$ can also be clearly identified by two anomalies in heat capacity and resistivity measurements. The higher transition temperature at $T^{*}\approx$ 12 K is mainly ascribed to Fe spin reorientation transition, below which Fe spins rotate uniformly and gradually in the \textit{ab} plane. The Fe spin reorientation transition and short-range Ce ordering above $T_\texttt{Ce}$ reflect the strong Fe-Ce couplings prior to long-range ordering of the Ce. The evolution of the intricate magnetic structures in CeFeAsO going through $T^{*}$ and $T_\texttt{Ce}$ is proposed.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Optical Generation of Excitonic Valley Coherence in Monolayer WSe2

Due to degeneracies arising from crystal symmetries, it is possible for electron states at band edges ("valleys") to have additional spin-like quantum numbers. An important question is whether coherent manipulation can be performed on such valley pseudospins, analogous to that routinely implemented using true spin, in the quest for quantum technologies. Here we show for the first time that SU(2) valley coherence can indeed be generated and detected. Using monolayer semiconductor WSe2 devices, we first establish the circularly polarized optical selection rules for addressing individual valley excitons and trions. We then reveal coherence between valley excitons through the observation of linearly polarized luminescence, whose orientation always coincides with that of any linearly polarized excitation. Since excitons in a single valley emit circularly polarized photons, linear polarization can only be generated through recombination of an exciton in a coherent superposition of the two valleys. In contrast, the corresponding photoluminescence from trions is not linearly polarized, consistent with the expectation that the emitted photon polarization is entangled with valley pseudospin. The ability to address coherence, in addition to valley polarization, adds a critical dimension to the quantum manipulation of valley index necessary for coherent valleytronics.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Origin of the phase transition in IrTe2: structural modulation and local bonding instability

We used X-ray/neutron diffraction to determine the low temperature (LT) structure of IrTe2. A structural modulation was observed with a wavevector of k =(1/5, 0, 1/5) below Ts?285 K, accompanied by a structural transition from a trigonal to a triclinic lattice. We also performed the first principles calculations for high temperature (HT) and LT structures, which elucidate the nature of the phase transition and the LT structure. A local bonding instability associated with the Te 5p states is likely the origin of the structural phase transition in IrTe2.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin-Layer Locking Effects in Optical Orientation of Exciton Spin in Bilayer WSe2

Coupling degrees of freedom of distinct nature plays a critical role in numerous physical phenomena. The recent emergence of layered materials provides a laboratory for studying the interplay between internal quantum degrees of freedom of electrons. Here, we report experimental signatures of new coupling phenomena connecting real spin with layer pseudospins in bilayer WSe2. In polarization-resolved photoluminescence measurements, we observe large spin orientation of neutral and charged excitons generated by both circularly and linearly polarized light, with a splitting of the trion spectrum into a doublet at large vertical electrical field. These observations can be explained by locking of spin and layer pseudospin in a given valley. Because up and down spin states are localized in opposite layers, spin relaxation is substantially suppressed, while the doublet emerges as a manifestation of electrically induced spin splitting resulting from the interlayer bias. The observed distinctive behavior of the trion doublet under circularly and linearly polarized light excitation further provides spectroscopic evidence of interlayer and intralayer trion species, a promising step toward optical manipulation in van der Waals heterostructures through the control of interlayer excitons.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

The hybrid lattice of KxFe2-ySe2: why superconductivity and magnetism can coexist

Much remains unknown of the microscopic origin of superconductivity when it materializes in atomically disordered systems as in amorphous alloys (1) or in crystals riddled with defects(2). A manifestation of this conundrum is envisaged in the highly defective iron chalcogenide superconductors of KxFe2-ySe2 (3-6). How can superconductivity survive under such crude conditions that call for strong electron localization (7)? With vacancies present both at the K and Fe sites, superconductivity is bordering a semi-metallic region below x ~ 0.7 and an insulating and antiferromagnetic region above x ~ 0.85 (8,9). Here, we report on the bulk local atomic structure and show that the Fe sublattice is locally distorted in a way that it accommodates two kinds of Fe valence environments giving rise to a bimodal bond distribution. While the bond length distribution is driven by K and Fe contents, the superconducting state is characterized by the coexistence of both short (metallic) and long (insulating) Fe bond environments and is not phase separated. In contrast to other Fe-based materials in which only one kind of Fe to Fe bond is present, the dual nature of the Fe correlations explains why superconductivity is intertwined with magnetic order. Such a hybrid state is most likely present in cuprate superconductors as well (10,11) while our results point to the importance of the local atomic symmetry by which the exchange interactions between local moments can materialize (12).

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Evolution of normal and superconducting properties of single crystals of Na$_{1-δ}$FeAs upon interaction with environment

Iron-arsenide superconductor Na$_{1-δ}$FeAs is highly reactive with the environment. Due to the high mobility of Na ions, this reaction affects the entire bulk of the crystals and leads an to effective stoichiometry change. Here we use this effect to study the doping evolution of normal and superconducting properties of \emph{the same} single crystals. Controlled reaction with air increases the superconducting transition temperature, $T_c$, from the initial value of 12 K to 27 K as probed by transport and magnetic measurements. Similar effects are observed in samples reacted with Apiezon N-grease, which slows down the reaction rate and results in more homogeneous samples. In both cases the temperature dependent resistivity, $ρ_a(T)$, shows a dramatic change with exposure time. In freshly prepared samples, $ρ_a(T)$ reveals clear features at the tetragonal-to-orthorhombic ($T_s$ $\approx$ 60 K) and antiferromagnetic ($T_m$=45 K) transitions and superconductivity with onset $T_{c,ons}$=16 K and offset $T_{c,off}$=12 K. The exposed samples show $T-$linear variation of $ρ_a(T)$ above $T_c,ons$=30 K ($T_{c,off}$=26 K), suggesting bulk character of the observed doping evolution and implying the existence of a quantum critical point at the optimal doping. The resistivity for different doping levels is affected below $\sim$200 K suggesting the existence of a characteristic energy scale that terminates the $T-$linear regime, which could be identified with a pseudogap.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Magnetic Structure and Interactions in the Quasi-1D Antiferromagnet CaV$_2$O$_4$

CaV$_2$O$_4$ is a spin-1 antiferromagnet, where the magnetic vanadium ions are arranged on quasi-one-dimensional (1D) zig-zag chains with potentially frustrated antiferromagnetic exchange interactions. High temperature susceptibility and single-crystal neutron diffraction measurements are used to deduce the non-collinear magnetic structure, dominant exchange interactions and orbital configurations. The results suggest that at high temperatures CaV$_2$O$_4$ behaves as a Haldane chain, but at low temperatures, orbital ordering lifts the frustration and it becomes a spin-1 ladder.

0 citations0 reviewsNo code linkedOpen access