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Wang Yao

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cond-mat.mes-hall cond-mat.mtrl-sci quant-ph cond-mat.dis-nn cond-mat.supr-con physics.chem-ph

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preprint2026arXiv

Electronic procrystalline state in moire structures

Solid state materials can display varieties of atomic structural orders ranging from crystalline to amorphous, underlying their properties and diverse functionalities. Procrystal has emerged as a new category of solids, featuring a long-range ordered lattice framework tiled with disordered atomic or molecular structures on the lattice sites, arousing great interest due to its novel structural and physical properties. However, the electronic analogue of a procrystal, dubbed as an electronic procrystalline (EPC) state, has never been experimentally observed. Here, we report the observation of an EPC state in a moire superstructure formed between a monolayer metallic NiTe2 and a superconductor NbSe2 with incommensurate lattice wavevectors. The observed EPC state exhibits a long-range periodic charge modulation at the moire scale inlaid with short-range irregular orders within each moire cell. Strikingly, the short-range charge orders inside the moire unit cells have proximately root3*root3 quasi-period, which is absent in pristine NiTe2. Intriguingly, the EPC order is also observed in the superconducting state of the moire superstructure. Furthermore, the emergent EPC state and short-range charge order, coexisting with the proximity induced superconductivity, can be precisely modulated with the thickness of NiTe2. Our findings uncover the potential of moire platform for understanding and tuning novel correlated quantum phases with this exotic procrystalline order.

preprint2023arXiv

Unconventional ferroelectricity in half-filling states of antiparallel stacking of twisted WSe2

Abstract: We report on emergence of an abnormal electronic polarization in twisted double bilayer WSe2 in antiparallel interface stacking geometry, where local centrosymmetry of atomic registries at the twist interface does not favor the spontaneous electronic polarizations as recently observed in the parallel interface stacking geometry. The unconventional ferroelectric behaviors probed by electronic transport measurement occur at half filling insulating states at 1.5 K and gradually disappear at about 40 K. Single band Hubbard model based on the triangular moiré lattice and the interlayer charge transfer controlled by insulating phase transition are proposed to interpret the formation of electronic polarization states near half filling in twisted WSe2 devices. Our work highlights the prominent role of many-body electronic interaction in fostering novel quantum states in moiré-structured systems.

preprint2022arXiv

Anomalous Bloch oscillation and electrical switching of edge magnetization in bilayer graphene nanoribbon

Graphene features topological edge bands that connect the pair of Dirac points through either sectors of the 1D Brillouin zone depending on edge configurations (zigzag or bearded). Because of their flat dispersion, spontaneous edge magnetisation can arise from Coulomb interaction in graphene nanoribbons, which has caught remarkable interest. We find an anomalous Bloch oscillation in such edge bands, in which the flat dispersion freezes electron motion along the field direction, while the topological connection of the bands through the bulk leads to electron oscillation in the transverse direction between edges of different configurations on opposite sides/layers of a bilayer ribbon. Our Hubbard-model mean-field calculation shows that this phenomenon can be exploited for electrical switching of edge magnetisation configurations.

preprint2022arXiv

Anomalous magneto-optical response and chiral interface of dipolar excitons at twisted valleys

An anomalous magneto-optical spectrum is discovered for dipolar valley excitons in twisted double layer transition metal dichalcogenides (TMD), where in-plane magnetic field induces a sizable multiplet splitting of exciton states inside the light cone. Chiral dispersions of the split branches make possible efficient optical injection of unidirectional exciton current. We also find an analog effect with a modest heterostrain replacing the magnetic field for introducing large splitting and chiral dispersions in the light cone. Angular orientation of photo-injected exciton flow can be controlled by strain, with left-right unidirectionality selected by circular polarisation.

preprint2022arXiv

Exceptional spin wave dynamics in an antiferromagnetic honeycomb lattice

We theoretically investigate possible effects of electric current on the spin wave dynamics for the Néel-type antiferromagnetic order in a honeycomb lattice. Based on a general vector decomposition of the spin polarization of conduction electrons, we find that there can exist reciprocal and nonreciprocal terms in the current-induced torque acting on the local spins in the system. Furthermore, we show that the reciprocal terms will cause the spin wave Doppler effect, while the nonreciprocal terms can induce rich non-Hermitian topological phenomena in the spin wave dynamics, including exceptional points, bulk Fermi arc, non-Hermitian skin effect, etc. Our results indicate the capability to manipulate non-Hermitian magnons in magnetic materials by electric current, which could be important for both fundamental physics and technology applications.

preprint2022arXiv

Light-Induced Ferromagnetism in Moiré Superlattices

Many-body interactions between carriers lie at the heart of correlated physics. The ability to tune such interactions would open the possibility to access and control complex electronic phase diagrams on demand. Recently, moiré superlattices formed by two-dimensional materials have emerged as a promising platform for quantum engineering such phenomena. The power of the moiré system lies in the high tunability of its physical parameters by tweaking layer twist angle, electrical field, moiré carrier filling, and interlayer coupling. Here, we report that optical excitation can drastically tune the spin-spin interactions between moiré trapped carriers, resulting in ferromagnetic order in WS2/WSe2 moiré superlattices over a small range of doping at elevated temperatures. Near the filling factor v = -1/3 (i.e., one hole per three moiré unit cells), as the excitation power at the exciton resonance increases, a well-developed hysteresis loop emerges in the reflective magnetic circular dichroism (RMCD) signal as a function of magnetic field, a hallmark of ferromagnetism. The hysteresis loop persists down to charge neutrality, and its shape evolves as the moiré superlattice is gradually filled, indicating changes of magnetic ground state properties. The observed phenomenon points to a mechanism in which itinerant photo-excited excitons mediate exchange coupling between moiré trapped holes. This exciton-mediated interaction can be of longer range than direct coupling between moiré trapped holes, and thus magnetic order can arise even in the dilute hole regime under optical excitation. This discovery adds a new and dynamic tuning knob to the rich many-body Hamiltonian of moiré quantum matter.

preprint2022arXiv

Ultrafast control of moiré pseudo-electromagnetic field in homobilayer semiconductors

In long-wavelength moiré patterns of homobilayer semiconductors, the layer pseudospin of electrons is subject to a sizable Zeeman field that is spatially modulated from the interlayer coupling in moiré. By interference of this spatial modulation with a homogeneous but dynamically tunable component from out-of-plane electric field, we show that the spatial-temporal profile of the overall Zeeman field therefore features a topological texture that can be controlled in an ultrafast timescale by a terahertz field or an interlayer bias. Such dynamical modulation leads to the emergence of an in-plane electric field for low energy carriers, which is related to their real space Berry curvature -- the moiré magnetic field -- through the Faraday's law of induction. These emergent electromagnetic fields, having opposite signs at the time reversal pair of valleys, can be exploited to manipulate valley and spin in the moiré landscape under the control by a bias pulse or a terahertz irradiation.

preprint2021arXiv

Chiral excitonics in monolayer semiconductors on patterned dielectric

Monolayer transition metal dichalcogenides feature tightly bound bright excitons at the degenerate valleys, where electron-hole Coulomb exchange interaction strongly couples the valley pseudospin to the momentum of exciton. Placed on periodically structured dielectric substrate, the spatial modulation of the Coulomb interaction leads to the formation of exciton Bloch states with real-space valley pseudospin texture displayed in a mesoscopic supercell. We find this spatial valley texture in the exciton Bloch function is pattern-locked to the propagation direction, enabling nano-optical excitation of directional exciton flow through the valley selection rule. The left-right directionality of the injected exciton current is controlled by the circular polarization of excitation, while the angular directionality is controlled by the excitation location, exhibiting a vortex pattern in a supercell. The phenomenon is reminiscent of the chiral light-matter interaction in nano-photonics structures, with the role of the guided electromagnetic wave now replaced by the valley-orbit coupled exciton Bloch wave in a uniform monolayer, which points to new excitonic devices with non-reciprocal functionalities.

preprint2020arXiv

Electrically tunable topological transport of moiré polaritons

Moiré interlayer exciton in transition metal dichalcogenide heterobilayer features a permanent electric dipole that enables the electrostatic control of its flow, and optical dipole that is spatially varying in the moiré landscape. We show the hybridization of moiré interlayer exciton with photons in a planar 2D cavity leads to two types of moiré polaritons that exhibit distinct forms of topological transport phenomena including the spin/valley Hall and polarization Hall effects, which feature remarkable electrical tunability through the control of exciton-cavity detuning by the interlayer bias.

preprint2020arXiv

Layer pseudospin dynamics and genuine non-Abelian Berry phase in inhomogeneously strained moiré pattern

Periodicity of long wavelength moiré patterns is very often destroyed by the inhomogeneous strain introduced in fabrications of van der Waals layered structures. We present a framework to describe massive Dirac fermions in such distorted moiré pattern of transition metal dichalcogenides homobilayers, accounting for the dynamics of layer pseudospin. In decoupled bilayers, we show two causes of in-plane layer pseudospin precession: By the coupling of layer antisymmetric strain to valley magnetic moment; and by the Aharonov-Bohm effect in the SU(2) gauge potential for the case of R-type bilayer under antisymmetric strain and H-type under symmetric strain. With interlayer coupling in the moiré, its interplay with strain manifests as a non-Abelian gauge field. We show a genuine non-Abelian Aharonov-Bohm effect in such field, where the evolution operators for different loops are non-commutative. This provides an exciting platform to explore non-Abelian gauge field effects on electron, with remarkable tunability of the field by strain and interlayer bias.

preprint2020arXiv

Layer-Resolved Magnetic Proximity Effect in van der Waals Heterostructures

Magnetic proximity effects are crucial ingredients for engineering spintronic, superconducting, and topological phenomena in heterostructures. Such effects are highly sensitive to the interfacial electronic properties, such as electron wave function overlap and band alignment. The recent emergence of van der Waals (vdW) magnets enables the possibility of tuning proximity effects via designing heterostructures with atomically clean interfaces. In particular, atomically thin CrI3 exhibits layered antiferromagnetism, where adjacent ferromagnetic monolayers are antiferromagnetically coupled. Exploiting this magnetic structure, we uncovered a layer-resolved magnetic proximity effect in heterostructures formed by monolayer WSe2 and bi/trilayer CrI3. By controlling the individual layer magnetization in CrI3 with a magnetic field, we found that the spin-dependent charge transfer between WSe2 and CrI3 is dominated by the interfacial CrI3 layer, while the proximity exchange field is highly sensitive to the layered magnetic structure as a whole. These properties enabled us to use monolayer WSe2 as a spatially sensitive magnetic sensor to map out layered antiferromagnetic domain structures at zero magnetic field as well as antiferromagnetic/ferromagnetic domains near the spin-flip transition in bilayer CrI3. Our work reveals a new way to control proximity effects and probe interfacial magnetic order via vdW engineering.

preprint2020arXiv

Monolayer Semiconductor Auger Detector

Auger recombination in semiconductors is a many-body phenomenon in which recombination of electrons and holes is accompanied by excitation of other charge carriers. Being nonradiative, it is detrimental to light emission. The excess energy of the excited carriers is normally rapidly converted to heat, making Auger processes difficult to probe directly. Here, we employ a technique in which the Auger-excited carriers are detected by their ability to tunnel out of the semiconductor through a thin barrier, generating a current. We employ vertical van der Waals (vdW) heterostructures with monolayer WSe2 as the semiconductor and the wide band gap hexagonal boron nitride (hBN) as the tunnel barrier to preferentially transmit high-energy Auger-excited carriers to a graphite electrode. The unambiguous signatures of Auger processes are a rise in the photocurrent when excitons are created by resonant excitation, and negative differential photoconductance resulting from the shifts of the exciton resonances with voltage. We detect holes Auger-excited by both neutral and charged excitons, and find that the Auger scattering is surprisingly strong under weak excitation. The selective extraction of Auger carriers at low, controlled carrier densities that is enabled by vdW heterostructures illustrates an important addition to the techniques available for probing relaxation processes in 2D materials.

preprint2020arXiv

Non-adiabatic Hall effect at Berry curvature hot spot

Hot spot of Berry curvature is usually found at Bloch band anti-crossings, where the Hall effect due to the Berry phase can be most pronounced. With small gaps there, the adiabatic limit for the existing formulations of Hall current can be exceeded in a moderate electric field. Here we present a theory of non-adiabatic Hall effect, capturing non-perturbatively the across gap electron-hole excitations by the electric field. We find a general connection between the field induced electron-hole coherence and intrinsic Hall velocity. In coherent evolution, the electron-hole coherence can manifest as a sizeable ac Hall velocity. When environmental noise is taken into account, its joint action with the electric field favors a form of electron-hole coherence that is function of wavevector and field only, leading to a dc nonlinear Hall effect. The Hall current has all odd order terms in field, and still retains the intrinsic role of the Berry curvature. The quantitative demonstration uses the example of gapped Dirac cones, and our theory can be used to describe the bulk pseudospin Hall current in insulators with gapped edge such as graphene and 2D MnBi$_{2}$Te$_{4}$

preprint2020arXiv

One-Dimensional Moiré Excitons in Transition-Metal Dichalcogenide Heterobilayers

The formation of interfacial moiré patterns from angular and/or lattice mismatch has become a powerful approach to engineer a range of quantum phenomena in van der Waals heterostructures. For long-lived and valley-polarized interlayer excitons in transition-metal dichalcogenide (TMDC) heterobilayers, signatures of quantum confinement by the moiré landscape have been reported in recent experimental studies. Such moiré confinement has offered the exciting possibility to tailor new excitonic systems, such as ordered arrays of zero-dimensional (0D) quantum emitters and their coupling into topological superlattices. A remarkable nature of the moiré potential is its dramatic response to strain, where a small uniaxial strain can tune the array of quantum-dot-like 0D traps into parallel stripes of one-dimensional (1D) quantum wires. Here, we present direct evidence for the 1D moiré potentials from real space imaging and the corresponding 1D moiré excitons from photoluminescence (PL) emission in MoSe2/WSe2 heterobilayers. Whereas the 0D moiré excitons display quantum emitter-like sharp PL peaks with circular polarization, the PL emission from 1D moiré excitons has linear polarization and two orders of magnitude higher intensity. The results presented here establish strain engineering as a powerful new method to tailor moiré potentials as well as their optical and electronic responses on demand.

preprint2020arXiv

Theory of tunable flux lattices in the homobilayer moiré of twisted and uniformly strained transition metal dichalcogenides

The spatial texture of internal degree of freedom of electrons has profound effects on the properties of materials. Such texture in real space can manifest as an emergent magnetic field (or Berry curvature), which is expected to induce interesting valley/spin-related transport phenomena. Moiré pattern, which emerges as a spatial variation at the interface of 2D atomic crystals, provides a natural platform for investigating such real space Berry curvature effects. Here we study moiré structures formed in homobilayer transition metal dichalcogenides (TMDs) due to twisting, various uniform strain profiles, and their combinations, where electrons can reside in either layer with the layer index serving as an internal degree of freedom. The layer pseudo-spin exhibits vortex/antivortex textures in the moiré supercell, leading to a giant geometric magnetic field and a scalar potential. Within a geometric picture, the moiré magnetic field is found as the cross product of the gradients of the out-of-plane pseudo-spin and the in-plane pseudo-spin orientation respectively. We discover dual roles of uniform strain: Besides being a cause of the moire atomic texture in the homobilayer, it also contributes a pseudo-gauge potential that modifies the local phase of interlayer coupling. Consequently, strain can be employed to tune the in-plane pseudo-spin texture, while interlayer bias tunes the out-of-plane pseudo-spin, and we show how the moiré magnetic field's spatial profile, intensity, and flux per supercell can be engineered. Through the geometric scalar correction, the landscape of the scalar potential can also be engineered along with the moiré magnetic field, forming distinct effective lattice structures. These properties render TMD moiré structures promising to build tunable flux lattices for transport and topological material applications.

preprint2020arXiv

Theory of wavepacket transport under narrow gaps and spatial textures: non-adiabaticity and semiclassicality

We generalise the celebrated semiclassical wavepacket approach from the adiabatic to the non-adiabatic regime. A unified description covering both of these regimes is particularly desired for systems with spatially varying band structures where band gaps of various sizes are simultaneously present, e.g. in moiré patterns. For a single wavepacket, alternative to the previous derivation by Lagrangian variational approach, we show that the same semiclassical equations of motion can be obtained by introducing a spatial-texture-induced force operator similar to the Ehrenfest theorem. For semiclassically computing the current, the ensemble of wavepackets based on adiabatic dynamics is shown to well correspond to a phase-space fluid for which the fluid's mass and velocity are two distinguishable properties. This distinction is not inherited to the ensemble of wavepackets with the non-adiabatic dynamics. We extend the adiabatic kinetic theory to the non-adiabatic regime by taking into account decoherence, whose joint action with electric field favours certain form of inter-band coherence. The steady-state density matrix as a function of the phase-space variables is then phenomenologically obtained for calculating the transport current. The result, applicable with a finite electric field, expectedly reproduces the known adiabatic limit by taking the electric field to be infinitesimal, and therefore attains a unified description from the adiabatic to the non-adiabatic situations.

preprint2020arXiv

Valley Phonons and Exciton Complexes in a Monolayer Semiconductor

The coupling between spin, charge, and lattice degrees of freedom plays an important role in a wide range of fundamental phenomena. Monolayer semiconducting transitional metal dichalcogenides have emerged as an outstanding platform for studying these coupling effects because they possess unique spin-valley locking physics for hosting rich excitonic species and the reduced screening for strong Coulomb interactions. Here, we report the observation of multiple valley phonons, phonons with momentum vectors pointing to the corners of the hexagonal Brillouin zone, and the resulting exciton complexes in the monolayer semiconductor WSe2. From Lande g-factor and polarization analyses of photoluminescence peaks, we find that these valley phonons lead to efficient intervalley scattering of quasi particles in both exciton formation and relaxation. This leads to a series of photoluminescence peaks as valley phonon replicas of dark trions. Using identified valley phonons, we also uncovered an intervalley exciton near charge neutrality, and extract its short-range electron-hole exchange interaction to be about 10 meV. Our work not only identifies a number of previously unknown 2D excitonic species, but also shows that monolayer WSe2 is a prime candidate for studying interactions between spin, pseudospin, and zone-edge phonons.

preprint2019arXiv

Valley-selective Klein tunneling through superlattice barrier in graphene

Graphene electrons feature a pair of massless Dirac cones of opposite pseudospin chirality at two valleys. Klein tunneling refers to the intriguing capability of these chiral electrons to penetrate through high and wide potential barrier. The two valleys have been treated independently in the literature, where time reversal symmetry dictates that neither the normal incidence transmission nor the angle-averaged one can have any valley polarization. Here we show that, when intervalley scattering by barrier is accounted, graphene electrons normally incident at a superlattice barrier can experience a fully valley-selective Klein tunneling, i.e. perfect transmission in one valley, and perfect reflection in the other. Intervalley backscattering creates staggered pseudospin gaps in the superlattice barrier, which, combined with the valley contrast in pseudospin chirality, determines the valley polarity of Klein tunneling. The angle averaged transmission can have a net valley polarization of 20% for a 5-period barrier, and exceed 75% for a 20-period barrier. Our finding points to an unexpected opportunity to realize valley functionalities in graphene electronics.

preprint2016arXiv

Directional Interlayer Spin-Valley Transfer in Two-Dimensional Heterostructures

Van der Waals heterostructures formed by two different monolayer semiconductors have emerged as a promising platform for new optoelectronic and spin/valleytronic applications. In addition to its atomically thin nature, a two-dimensional semiconductor heterostructure is distinct from its three-dimensional counterparts due to the unique coupled spin-valley physics of its constituent monolayers. Here, we report the direct observation that an optically generated spin-valley polarization in one monolayer can be transferred between layers of a two-dimensional MoSe2-WSe2 heterostructure. Using nondegenerate optical circular dichroism spectroscopy, we show that charge transfer between two monolayers conserves spin-valley polarization and is only weakly dependent on the twist angle between layers. Our work points to a new spin-valley pumping scheme in nanoscale devices, provides a fundamental understanding of spin-valley transfer across the two-dimensional interface, and shows the potential use of two-dimensional semiconductors as a spin-valley generator in 2D spin/valleytronic devices for storing and processing information.

preprint2016arXiv

Expansion of a Valley-Polarized Exciton Cloud in a 2D Heterostructure

Heterostructures comprising different monolayer semiconductors provide a new system for fundamental science and device technologies, such as in the emerging field of valleytronics. Here, we realize valley-specific interlayer excitons in monolayer WSe2-MoSe2 vertical heterostructures. We create interlayer exciton spin-valley polarization by circularly polarized optical pumping and determine a valley lifetime of 40 nanoseconds. This long-lived polarization enables the visualization of the expansion of a valley-polarized exciton cloud over several microns. The spatial pattern of the polarization evolves into a ring with increasing exciton density, a manifestation of valley exciton exchange interactions. Our work lays a foundation for quantum optoelectronics and valleytronics based on interlayer excitons in van der Waals heterostructures.

preprint2016arXiv

Spin-valley qubit in nanostructures of monolayer semiconductors: Optical control and hyperfine interaction

We investigate the optical control possibilities of spin-valley qubit carried by single electrons localized in nanostructures of monolayer TMDs, including small quantum dots formed by lateral heterojunction and charged impurities. The quantum controls are discussed when the confinement induces valley hybridization and when the valley hybridization is absent. We show that the bulk valley and spin optical selection rules can be inherited in different forms in the two scenarios, both of which allow the definition of spin-valley qubit with desired optical controllability. We also investigate nuclear spin induced decoherence and quantum control of electron-nuclear spin entanglement via intervalley terms of the hyperfine interaction. Optically controlled two-qubit operations in a single quantum dot are discussed.

preprint2015arXiv

Anomalous light cones and valley optical selection rules of interlayer excitons in twisted heterobilayers

We show that, because of the inevitable twist and lattice mismatch in heterobilayers of transition metal dichalcogenides, interlayer excitons have six-fold degenerate light cones anomalously located at finite velocities on the parabolic energy dispersion. The photon emissions at each light cone are elliptically polarized, with major axis locked to the direction of exciton velocity, and helicity specified by the valley indices of the electron and the hole. These finite-velocity light cones allow unprecedented possibilities to optically inject valley polarization and valley current, and the observation of both direct and inverse valley Hall effects, by exciting interlayer excitons. Our findings suggest potential excitonic circuits with valley functionalities, and unique opportunities to study exciton dynamics and condensation phenomena in semiconducting 2D heterostructures.

preprint2015arXiv

Berry phase modification to the energy spectrum of excitons

By quantizing the semiclassical motion of excitons, we show that the Berry curvature can cause an energy splitting between exciton states with opposite angular momentum. This splitting is determined by the Berry curvature flux through the $\bm k$-space area spanned by the relative motion of the electron-hole pair in the exciton wave function. Using the gapped two-dimensional Dirac equation as a model, we show that this splitting can be understood as an effective spin-orbit coupling effect. In addition, there is also an energy shift caused by other "relativistic" terms. Our result reveals the limitation of the venerable hydrogenic model of excitons, and highlights the importance of the Berry curvature in the effective mass approximation.

preprint2015arXiv

Electrical Control of Second-Harmonic Generation in a WSe2 Monolayer Transistor

Nonlinear optical frequency conversion, in which optical fields interact with a nonlinear medium to produce new field frequencies, is ubiquitous in modern photonic systems. However, the nonlinear electric susceptibilities that give rise to such phenomena are often challenging to tune in a given material, and so far, dynamical control of optical nonlinearities remains confined to research labs as a spectroscopic tool. Here, we report a mechanism to electrically control second-order optical nonlinearities in monolayer WSe2, an atomically thin semiconductor. We show that the intensity of second-harmonic generation at the A-exciton resonance is tunable by over an order of magnitude at low temperature and nearly a factor of 4 at room temperature through electrostatic doping in a field-effect transistor. Such tunability arises from the strong exciton charging effects in monolayer semiconductors, which allow for exceptional control over the oscillator strengths at the exciton and trion resonances. The exciton-enhanced second-harmonic generation is counter-circularly polarized to the excitation laser, arising from the combination of the two-photon and one-photon valley selection rules that have opposite helicity in the monolayer. Our study paves the way towards a new platform for chip-scale, electrically tunable nonlinear optical devices based on two-dimensional semiconductors.

preprint2015arXiv

Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides

Atomically thin group-VIB transition metal dichalcogenides (TMDs) have recently emerged as a new class of two-dimensional (2D) semiconductors with extraordinary properties including the direct band gap in the visible frequency range, the pronounced spin-orbit coupling, the ultra-strong Coulomb interaction, and the rich physics associated with the valley degree of freedom. These 2D TMDs exhibit great potentials for device applications and have attracted vast interest for the exploration of new physics. 2D TMDs have complex electronic structures which underlie their physical properties. Here we review the bulk electronic structures in these new 2D materials as well as the theoretical models developed at different levels, along which we sort out the understandings on the origins of a variety of properties observed or predicted.

preprint2015arXiv

Gate-tunable Topological Valley Transport in Bilayer Graphene

Valley pseudospin, the quantum degree of freedom characterizing the degenerate valleys in energy bands, is a distinct feature of two-dimensional Dirac materials. Similar to spin, the valley pseudospin is spanned by a time reversal pair of states, though the two valley pseudospin states transform to each other under spatial inversion. The breaking of inversion symmetry induces various valley-contrasted physical properties; for instance, valley-dependent topological transport is of both scientific and technological interests. Bilayer graphene (BLG) is a unique system whose intrinsic inversion symmetry can be controllably broken by a perpendicular electric field, offering a rare possibility for continuously tunable valley-topological transport. Here, we used a perpendicular gate electric field to break the inversion symmetry in BLG, and a giant nonlocal response was observed as a result of the topological transport of the valley pseudospin. We further showed that the valley transport is fully tunable by external gates, and that the nonlocal signal persists up to room temperature and over long distances. These observations challenge contemporary understanding of topological transport in a gapped system, and the robust topological transport may lead to future valleytronic applications.

preprint2015arXiv

Observation of intervalley quantum interference in epitaxial monolayer WSe2

Monolayer (ML) transition metal dichalcogenides (TMDs) have been attracting great research attentions lately for their extraordinary properties, in particular the exotic spin-valley coupled electronic structures that promise future spintronic and valleytronic applications1-3. The energy bands of ML TMDs have well separated valleys that constitute effectively an extra internal degree of freedom for low energy carriers3-12. The large spin-orbit coupling in the TMDs makes the spin index locked to the valley index, which has some interesting consequences such as the magnetoelectric effects in 2H bilayers13. A direct experimental characterization of the spin-valley coupled electronic structure can be of great interests for both fundamental physics and device applications. In this work, we report the first experimental observation of the quasi-particle interference (QPI) patterns in ML WSe2 using low-temperature (LT) scanning tunneling microscopy/spectroscopy (STM/S). We observe intervalley quantum interference involving the Q-valleys in the conduction band due to spin-conserved scattering processes, while spin-flip intervalley scattering is absent. This experiment establishes unequivocally the presence of spin-valley coupling and affirms the large spin-splitting at the Q valleys. Importantly, the inefficient spin-flip intervalley scattering implies long valley and spin lifetime in ML WSe2, which represents a key figure of merit for valley-spintronic applications.

preprint2015arXiv

Population pulsation resonances of excitons in monolayer MoSe2 with sub 1 μeV linewidth

Monolayer transition metal dichalcogenides, a new class of atomically thin semiconductors, possess optically coupled 2D valley excitons. The nature of exciton relaxation in these systems is currently poorly understood. Here, we investigate exciton relaxation in monolayer MoSe2 using polarization-resolved coherent nonlinear optical spectroscopy with high spectral resolution. We report strikingly narrow population pulsation resonances with two different characteristic linewidths of 1 μeV and <0.2 μeV at low-temperature. These linewidths are more than three orders of magnitude narrower than the photoluminescence and absorption linewidth, and indicate that a component of the exciton relaxation dynamics occurs on timescales longer than 1 ns. The ultra-narrow resonance (<0.2 μeV) emerges with increasing excitation intensity, and implies the existence of a long-lived state whose lifetime exceeds 6 ns.

preprint2015arXiv

Ultra-Low Threshold Monolayer Semiconductor Nanocavity Lasers

Engineering the electromagnetic environment of a nanoscale light emitter by a photonic cavity can significantly enhance its spontaneous emission rate through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter, providing the ultimate low-threshold laser system with small footprint, low power consumption and ultrafast modulation. A state-of-the-art ultra-low threshold nanolaser has been successfully developed though embedding quantum dots into photonic crystal cavity (PhCC). However, several core challenges impede the practical applications of this architecture, including the random positions and compositional fluctuations of the dots, extreme difficulty in current injection, and lack of compatibility with electronic circuits. Here, we report a new strategy to lase, where atomically thin crystalline semiconductor, i.e., a tungsten-diselenide (WSe2) monolayer, is nondestructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PhCC. A new type of continuous-wave nanolaser operating in the visible regime is achieved with an optical pumping threshold as low as 27 nW at 130 K, similar to the value achieved in quantum dot PhCC lasers. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within 1 nm of the PhCC surface. The surface-gain geometry allows unprecedented accessibilities to multi-functionalize the gain, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.

preprint2015arXiv

Valley excitons in two-dimensional semiconductors

Monolayer group-VIB transition metal dichalcogenides have recently emerged as a new class of semiconductors in the two-dimensional limit. The attractive properties include: the visible range direct band gap ideal for exploring optoelectronic applications; the intriguing physics associated with spin and valley pseudospin of carriers which implies potentials for novel electronics based on these internal degrees of freedom; the exceptionally strong Coulomb interaction due to the two-dimensional geometry and the large effective masses. The physics of excitons, the bound states of electrons and holes, has been one of the most actively studied topics on these two-dimensional semiconductors, where the excitons exhibit remarkably new features due to the strong Coulomb binding, the valley degeneracy of the band edges, and the valley dependent optical selection rules for interband transitions. Here we give a brief overview of the experimental and theoretical findings on excitons in two-dimensional transition metal dichalcogenides, with focus on the novel properties associated with their valley degrees of freedom.

preprint2015arXiv

Visualizing Band Offsets and Edge States in Bilayer-Monolayer Transition Metal Dichalcogenides Lateral Heterojunction

Semiconductor heterostructures are fundamental building blocks for many important device applications. The emergence of two-dimensional semiconductors opens up a new realm for creating heterostructures. As the bandgaps of transition metal dichalcogenides thin films have sensitive layer dependence, it is natural to create lateral heterojunctions using the same materials with different thicknesses. Using scanning tunneling microscopy and spectroscopy, here we show the real space image of electronic structures across the bilayer-monolayer interface in MoSe2 and WSe2. Most bilayer-monolayer heterojunctions are found to have a zigzag-orientated interface, and the band alignment of such atomically sharp heterojunctions is of type-I with a well-defined interface mode which acts as a narrower-gap quantum wire. The ability to utilize such commonly existing thickness terrace as lateral heterojunctions is a crucial addition to the tool set for device applications based on atomically thin transition metal dichalcogenides, with the advantage of easy and flexible implementation.

preprint2014arXiv

Bright excitons in monolayer transition metal dichalcogenides: from Dirac cones to Dirac saddle points

In monolayer transition metal dichalcogenides, tightly bound excitons have been discovered with a valley pseudospin that can be optically addressed through polarization selection rules. Here, we show that this valley pseudospin is strongly coupled to the exciton center-of-mass motion through electron-hole exchange. This coupling realizes a massless Dirac cone with chirality index I=2 for excitons inside the light cone, i.e. bright excitons. Under moderate strain, the I=2 Dirac cone splits into two degenerate I=1 Dirac cones, and saddle points with a linear Dirac spectrum emerge in the bright exciton dispersion. Interestingly, after binding an extra electron, the charged exciton becomes a massive Dirac particle associated with a large valley Hall effect protected from intervalley scattering. Our results point to unique opportunities to study Dirac physics, with exciton's optical addressability at specifiable momentum, energy and pseudospin. The strain-tunable valley-orbit coupling also implies new structures of exciton condensates, new functionalities of excitonic circuits, and possibilities for mechanical control of valley pseudospin.

preprint2014arXiv

Dense network of one-dimensional mid-gap metallic modes in monolayer MoSe2 and their spatial undulations

We report the observation of a dense triangular network of one-dimensional (1D) metallic modes in a continuous and uniform monolayer of MoSe2 grown by molecular-beam epitaxy. High-resolution transmission electron microscopy and scanning tunneling microscopy and spectroscopy (STM/STS) studies show these 1D modes are mid-gap states at inversion domain boundaries. STM/STS measurements further reveal intensity undulations of the metallic modes, presumably arising from the superlattice potentials due to moire pattern and the quantum confinement effect. A dense network of the metallic modes with high density of states is of great potential for heterocatalysis applications. The interconnection of such mid-gap 1D conducting channels may also imply new transport behaviors distinct from the 2D bulk.

preprint2014arXiv

Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions

Light-emitting diodes are of importance for lighting, displays, optical interconnects, logic and sensors. Hence the development of new systems that allow improvements in their efficiency, spectral properties, compactness and integrability could have significant ramifications. Monolayer transition metal dichalcogenides have recently emerged as interesting candidates for optoelectronic applications due to their unique optical properties. Electroluminescence has already been observed from monolayer MoS2 devices. However, the electroluminescence efficiency was low and the linewidth broad due both to the poor optical quality of MoS2 and to ineffective contacts. Here, we report electroluminescence from lateral p-n junctions in monolayer WSe2 induced electrostatically using a thin boron nitride support as a dielectric layer with multiple metal gates beneath. This structure allows effective injection of electrons and holes, and combined with the high optical quality of WSe2 it yields bright electroluminescence with 1000 times smaller injection current and 10 times smaller linewidth than in MoS2. Furthermore, by increasing the injection bias we can tune the electroluminescence between regimes of impurity-bound, charged, and neutral excitons. This system has the required ingredients for new kinds of optoelectronic devices such as spin- and valley-polarized light-emitting diodes, on-chip lasers, and two-dimensional electro-optic modulators.

preprint2014arXiv

Intervalley coupling by quantum dot confinement potentials in monolayer transition metal dichalcogenides

Monolayer transition metal dichalcogenides (TMDs) offer new opportunities for realizing quantum dots (QDs) in the ultimate two-dimensional (2D) limit. Given the rich control possibilities of electron valley pseudospin discovered in the monolayers, this quantum degree of freedom can be a promising carrier of information for potential quantum spintronics exploiting single electrons in TMD QDs. An outstanding issue is to identify the degree of valley hybridization, due to the QD confinement, which may significantly change the valley physics in QDs from its form in the 2D bulk. Here we perform a systematic study of the intervalley coupling by QD confinement potentials on extended TMD monolayers. We find that the intervalley coupling in such geometry is generically weak due to the vanishing amplitude of the electron wavefunction at the QD boundary, and hence valley hybridization shall be well quenched by the much stronger spin-valley coupling in monolayer TMDs and the QDs can well inherit the valley physics of the 2D bulk. We also discover sensitive dependence of intervalley coupling strength on the central position and the lateral length scales of the confinement potentials, which may possibly allow tuning of intervalley coupling by external controls

preprint2014arXiv

Lateral heterojunctions within monolayer semiconductors

Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers, and high-speed transistors. Creating analogous heterojunctions between different two-dimensional (2D) semiconductors would enable band engineering within the 2D plane and open up new realms in materials science, device physics and engineering. Here we demonstrate that seamless high-quality in-plane heterojunctions can be grown between the 2D monolayer semiconductors MoSe2 and WSe2. The junctions, grown by lateral hetero-epitaxy using physical vapor transport, are visible in an optical microscope and show enhanced photoluminescence. Atomically resolved transmission electron microscopy reveals that their structure is an undistorted honeycomb lattice in which substitution of one transition metal by another occurs across the interface. The growth of such lateral junctions will allow new device functionalities, such as in-plane transistors and diodes, to be integrated within a single atomically thin layer.

preprint2014arXiv

Magnetic Control of Valley Pseudospin in Monolayer WSe2

Local energy extrema of the bands in momentum space, or valleys, can endow electrons in solids with pseudo-spin in addition to real spin. In transition metal dichalcogenides this valley pseudo-spin, like real spin, is associated with a magnetic moment which underlies the valley-dependent circular dichroism that allows optical generation of valley polarization, intervalley quantum coherence, and the valley Hall effect. However, magnetic manipulation of valley pseudospin via this magnetic moment, analogous to what is possible with real spin, has not been shown before. Here we report observation of the valley Zeeman splitting and magnetic tuning of polarization and coherence of the excitonic valley pseudospin, by performing polarization-resolved magneto-photoluminescence on monolayer WSe2. Our measurements reveal both the atomic orbital and lattice contributions to the valley orbital magnetic moment; demonstrate the deviation of the band edges in the valleys from an exact massive Dirac fermion model; and reveal a striking difference between the magnetic responses of neutral and charged valley excitons which is explained by renormalization of the excitonic spectrum due to strong exchange interactions.

preprint2014arXiv

Magnetisms in $p$-type monolayer gallium chalcogenides (GaSe, GaS)

Magnetisms in $p$-type monolayer GaX (X=S,Se) is investigated by performing density-functional calculations. Due to the large density of states near the valence band edge, these monolayer semiconductors are ferromagnetic within a small range of hole doping. The intrinsic Ga vacancies can promote local magnetic moment while Se vacancies cannot. Magnetic coupling between vacancy-induced local moments is ferromagnetic and surprisingly long-range. The results indicate that magnetization can be induced by hole doping and can be tuned by controlled defect generation.

preprint2014arXiv

Nonlinear valley and spin currents from Fermi pocket anisotropy in 2D crystals

Controlled flow of spin and valley pseudospin is key to future electronics exploiting these internal degrees of freedom of carriers. Here we discover a universal possibility for generating spin and valley currents by electric bias or temperature gradient only, which arises from the anisotropy of Fermi pockets in crystalline solids. We find spin and valley currents to the second order in the electric field, as well as their thermoelectric counterparts, i.e. the nonlinear spin and valley Seebeck effects. These second-order nonlinear responses allow two unprecedented possibilities to generate pure spin and valley flows without net charge current: (i) by an AC bias; or (ii) by an arbitrary inhomogeneous temperature distribution. As examples, we predict appreciable nonlinear spin and valley currents in two-dimensional (2D) crystals including graphene, monolayer and trilayer transition metal dichalcogenides, and monolayer gallium selenide. Our finding points to a new route towards electrical and thermal generations of spin and valley currents for spintronic and valleytronic applications based on 2D quantum materials.

preprint2014arXiv

Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures

Two-dimensional (2D) materials, such as graphene1, boron nitride2, and transition metal dichalcogenides (TMDs)3-5, have sparked wide interest in both device physics and technological applications at the atomic monolayer limit. These 2D monolayers can be stacked together with precise control to form novel van der Waals heterostructures for new functionalities2,6-9. One highly coveted but yet to be realized heterostructure is that of differing monolayer TMDs with type II band alignment10-12. Their application potential hinges on the fabrication, understanding, and control of bonded monolayers, with bound electrons and holes localized in individual monolayers, i.e. interlayer excitons. Here, we report the first observation of interlayer excitons in monolayer MoSe2-WSe2 heterostructures by both photoluminescence and photoluminescence excitation spectroscopy. The energy and luminescence intensity of interlayer excitons are highly tunable by an applied vertical gate voltage, implying electrical control of the heterojunction band-alignment. Using time resolved photoluminescence, we find that the interlayer exciton is long-lived with a lifetime of about 1.8 ns, an order of magnitude longer than intralayer excitons13-16. Our work demonstrates the ability to optically pump interlayer electric polarization and provokes the immediate exploration of interlayer excitons for condensation phenomena, as well as new applications in 2D light-emitting diodes, lasers, and photovoltaic devices.

preprint2014arXiv

Single Quantum Emitters in Monolayer Semiconductors

Single quantum emitters (SQEs) are at the heart of quantum optics and photonic quantum information technologies. To date, all demonstrated solid-state single-photon sources are confined in three-dimensional materials. Here, we report a new class of SQEs based on excitons that are spatially localized by defects in two-dimensional tungsten-diselenide monolayers. The optical emission from these SQEs shows narrow linewidths of ~0.13 meV, about two orders of magnitude smaller than that of delocalized valley excitons. Second-order correlation measurements reveal strong photon anti-bunching, unambiguously establishing the single photon nature of the emission. The SQE emission shows two non-degenerate transitions, which are cross-linearly polarized. We assign this fine structure to two excitonic eigen-modes whose degeneracy is lifted by a large ~0.71 meV coupling, likely due to the electron-hole exchange interaction in presence of anisotropy. Magneto-optical measurements also reveal an exciton g-factor of ~8.7, several times larger than that of delocalized valley excitons. In addition to their fundamental importance, establishing new SQEs in 2D quantum materials could give rise to practical advantages in quantum information processing, such as efficient photon extraction and high integratability and scalability.

preprint2014arXiv

Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides

We present a three-band tight-binding (TB) model for describing the low-energy physics in monolayers of group-VIB transition metal dichalcogenides $MX_2$ ($M$=Mo, W; $X$=S, Se, Te). As the conduction and valence band edges are predominantly contributed by the $d_{z^{2}}$, $d_{xy}$, and $d_{x^{2}-y^{2}}$ orbitals of $M$ atoms, the TB model is constructed using these three orbitals based on the symmetries of the monolayers. Parameters of the TB model are fitted from the first-principles energy bands for all $MX_2$ monolayers. The TB model involving only the nearest-neighbor $M$-$M$ hoppings is sufficient to capture the band-edge properties in the $\pm K$ valleys, including the energy dispersions as well as the Berry curvatures. The TB model involving up to the third-nearest-neighbor $M$-$M$ hoppings can well reproduce the energy bands in the entire Brillouin zone. Spin-orbit coupling in valence bands is well accounted for by including the on-site spin-orbit interactions of $M$ atoms. The conduction band also exhibits a small valley-dependent spin splitting which has an overall sign difference between Mo$X_{2}$ and W$X_{2}$. We discuss the origins of these corrections to the three-band model. The three-band TB model developed here is efficient to account for low-energy physics in $MX_2$ monolayers, and its simplicity can be particularly useful in the study of many-body physics and physics of edge states.

preprint2014arXiv

Valley Contrasting Magnetoluminescence in Monolayer MoS$_{2}$ Quantum Hall Systems

The valley dependent optical selection rules in recently discovered monolayer group-VI transition metal dichalcogenides (TMDs) make possible optical control of valley polarization, a crucial step towards valleytronic applications. However, in presence of Landaul level(LL) quantization such selection rules are taken over by selection rules between the LLs, which are not necessarily valley contrasting. Using MoS$_{2}$ as an example we show that the spatial inversion-symmetry breaking results in unusual valley dependent inter-LL selection rules, which directly locks polarization to valley. We find a systematic valley splitting for all Landau levels (LLs) in the quantum Hall regime, whose magnitude is linearly proportional to the magnetic field and in comparable with the LL spacing. Consequently, unique plateau structures are found in the optical Hall conductivity, which can be measured by the magneto-optical Faraday rotations.

preprint2013arXiv

Control of Two-Dimensional Excitonic Light Emission via Photonic Crystal

Monolayers of transition metal dichalcogenides (TMDCs) have emerged as new optoelectronic materials in the two dimensional (2D) limit, exhibiting rich spin-valley interplays, tunable excitonic effects, and strong light-matter interactions. An essential yet undeveloped ingredient for many photonic applications is the manipulation of its light emission. Here we demonstrate the control of excitonic light emission from monolayer tungsten diselenide (WSe2) in an integrated photonic structure, achieved by transferring one monolayer onto a photonic crystal (PhC) with a cavity. In addition to the observation of greatly enhanced (~60 times) photoluminescence of WSe2 and an effectively coupled cavity-mode emission, we are able to redistribute the emitted photons both polarly and azimuthally in the far field through designing PhC structures, as revealed by momentum-resolved microscopy. A 2D optical antenna is thus constructed. Our work suggests a new way of manipulating photons in hybrid 2D photonics, important for future energy efficient optoelectronics and 2D nano-lasers.

preprint2013arXiv

Electrical Control of Two-Dimensional Neutral and Charged Excitons in a Monolayer Semiconductor

Monolayer group VI transition metal dichalcogenides have recently emerged as semiconducting alternatives to graphene in which the true two-dimensionality (2D) is expected to illuminate new semiconducting physics. Here we investigate excitons and trions (their singly charged counterparts) which have thus far been challenging to generate and control in the ultimate 2D limit. Utilizing high quality monolayer molybdenum diselenide (MoSe2), we report the unambiguous observation and electrostatic tunability of charging effects in positively charged (X+), neutral (Xo), and negatively charged (X-) excitons in field effect transistors via photoluminescence. The trion charging energy is large (30 meV), enhanced by strong confinement and heavy effective masses, while the linewidth is narrow (5 meV) at temperatures below 55 K. This is greater spectral contrast than in any known quasi-2D system. We also find the charging energies for X+ and X- to be nearly identical implying the same effective mass for electrons and holes.

preprint2013arXiv

Intervalley Scattering and Localization Behaviors of Spin-Valley Coupled Dirac Fermions

We study the quantum diffusive transport of multivalley massive Dirac cones, where time-reversal symmetry requires opposite spin orientations in inequivalent valleys. We show that the intervalley scattering and intravalley scattering can be distinguished from the quantum conductivity that corrects the semiclassical Drude conductivity, due to their distinct symmetries and localization trends. In immediate practice, it allows transport measurements to estimate the intervalley scattering rate in hole-doped monolayers of group-VI transition metal dichalcogenides (e.g., molybdenum dichalcogenides and tungsten dichalcogenides), an ideal class of materials for valleytronics applications. The results can be generalized to a large class of multivalley massive Dirac systems with spin-valley coupling and time-reversal symmetry.

preprint2013arXiv

Magnetic control of the valley degree of freedom of massive Dirac fermions with application to transition metal dichalcogenides

We study the valley-dependent magnetic and transport properties of massive Dirac fermions in multivalley systems such as the transition metal dichalcogenides. The asymmetry of the zeroth Landau level between valleys and the enhanced magnetic susceptibility can be attributed to the different orbital magnetic moment tied with each valley. This allows the valley polarization to be controlled by tuning the external magnetic field and the doping level. As a result of this magnetic field induced valley polarization, there exists an extra contribution to the ordinary Hall effect. All these effects can be captured by a low energy effective theory with a valley-orbit coupling term.

preprint2013arXiv

Magnetoelectric effects and valley controlled spin quantum gates in transition metal dichalcogenide bilayers

In monolayer group-VI transition metal dichalcogenides (TMDC), charge carriers have spin and valley degrees of freedom, both associated with magnetic moments. On the other hand, the layer degree of freedom in multilayers is associated with electrical polarization. Here, we show that TMDC bilayers offer an unprecedented platform to realize a strong coupling between the spin, layer pseudospin, and valley degrees of freedom of holes. Such coupling not only gives rise to the spin Hall effect and spin circular dichroism in inversion symmetric bilayer, but also leads to a variety of magnetoelectric effects permitting quantum manipulation of these electronic degrees of freedom. Oscillating electric and magnetic fields can both drive the hole spin resonance where the two fields have valley-dependent interference, making possible a prototype interplay between the spin and valley as information carriers for potential valley-spintronic applications. We show how to realize quantum gates on the spin qubit controlled by the valley bit.

preprint2013arXiv

Majorana Fermions on Zigzag Edge of Monolayer Transition Metal Dichalcogenides

Majorana fermions, quantum particles with non-Abelian exchange statistics, are not only of fundamental importance, but also building blocks for fault-tolerant quantum computation. Although certain experimental breakthroughs for observing Majorana fermions have been made recently, their conclusive dection is still challenging due to the lack of proper material properties of the underlined experimental systems. Here we propose a new platform for Majorana fermions based on edge states of certain non-topological two-dimensional semiconductors with strong spin-orbit coupling, such as monolayer group-VI transition metal dichalcogenides (TMD). Using first-principles calculations and tight-binding modeling, we show that zigzag edges of monolayer TMD can host well isolated single edge band with strong spin-orbit coupling energy. Combining with proximity induced s-wave superconductivity and in-plane magnetic fields, the zigzag edge supports robust topological Majorana bound states at the edge ends, although the two-dimensional bulk itself is non-topological. Our findings points to a controllable and integrable platform for searching and manipulating Majorana fermions.

preprint2013arXiv

Optical Generation of Excitonic Valley Coherence in Monolayer WSe2

Due to degeneracies arising from crystal symmetries, it is possible for electron states at band edges ("valleys") to have additional spin-like quantum numbers. An important question is whether coherent manipulation can be performed on such valley pseudospins, analogous to that routinely implemented using true spin, in the quest for quantum technologies. Here we show for the first time that SU(2) valley coherence can indeed be generated and detected. Using monolayer semiconductor WSe2 devices, we first establish the circularly polarized optical selection rules for addressing individual valley excitons and trions. We then reveal coherence between valley excitons through the observation of linearly polarized luminescence, whose orientation always coincides with that of any linearly polarized excitation. Since excitons in a single valley emit circularly polarized photons, linear polarization can only be generated through recombination of an exciton in a coherent superposition of the two valleys. In contrast, the corresponding photoluminescence from trions is not linearly polarized, consistent with the expectation that the emitted photon polarization is entangled with valley pseudospin. The ability to address coherence, in addition to valley polarization, adds a critical dimension to the quantum manipulation of valley index necessary for coherent valleytronics.

preprint2013arXiv

Protecting dissipative quantum state preparation via dynamical decoupling

We show that dissipative quantum state preparation processes can be protected against qubit dephasing by interlacing the state preparation control with dynamical decoupling (DD) control consisting of a sequence of short $π$-pulses. The inhomogeneous broadening can be suppressed to second order of the pulse interval, and the protection efficiency is nearly independent of the pulse sequence but determined by the average interval between pulses. The DD protection is numerically tested and found to be efficient against inhomogeneous dephasing on two exemplary dissipative state preparation schemes that use collective pumping to realize many-body singlets and linear cluster states respectively. Numerical simulation also shows that the state preparation can be efficiently protected by $π$-pulses with completely random arrival time. Our results make possible the application of these state preparation schemes in inhomogeneously broadened systems. DD protection of state preparation against dynamical noises is also discussed using the example of Gaussian noise with a semiclasscial description.

preprint2013arXiv

Spin-Layer Locking Effects in Optical Orientation of Exciton Spin in Bilayer WSe2

Coupling degrees of freedom of distinct nature plays a critical role in numerous physical phenomena. The recent emergence of layered materials provides a laboratory for studying the interplay between internal quantum degrees of freedom of electrons. Here, we report experimental signatures of new coupling phenomena connecting real spin with layer pseudospins in bilayer WSe2. In polarization-resolved photoluminescence measurements, we observe large spin orientation of neutral and charged excitons generated by both circularly and linearly polarized light, with a splitting of the trion spectrum into a doublet at large vertical electrical field. These observations can be explained by locking of spin and layer pseudospin in a given valley. Because up and down spin states are localized in opposite layers, spin relaxation is substantially suppressed, while the doublet emerges as a manifestation of electrically induced spin splitting resulting from the interlayer bias. The observed distinctive behavior of the trion doublet under circularly and linearly polarized light excitation further provides spectroscopic evidence of interlayer and intralayer trion species, a promising step toward optical manipulation in van der Waals heterostructures through the control of interlayer excitons.

preprint2012arXiv

Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides

We show that inversion symmetry breaking together with spin-orbit coupling leads to coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides, making possible controls of spin and valley in these 2D materials. The spin-valley coupling at the valence band edges suppresses spin and valley relaxation, as flip of each index alone is forbidden by the valley contrasting spin splitting. Valley Hall and spin Hall effects coexist in both electron-doped and hole-doped systems. Optical interband transitions have frequency-dependent polarization selection rules which allow selective photoexcitation of carriers with various combination of valley and spin indices. Photo-induced spin Hall and valley Hall effects can generate long lived spin and valley accumulations on sample boundaries. The physics discussed here provides a route towards the integration of valleytronics and spintronics in multi-valley materials with strong spin-orbit coupling and inversion symmetry breaking.

preprint2012arXiv

Deterministic preparation of Dicke states of donor nuclear spins in silicon by cooperative pumping

For donor nuclear spins in silicon, we show how to deterministically prepare various symmetric and asymmetric Dicke states which span a complete basis of the many-body Hilbert space. The state preparation is realized by cooperative pumping of nuclear spins by coupled donor electrons, and the required controls are in situ to the prototype Kane proposal for quantum computation. This scheme only requires a sub-gigahertz donor exchange coupling which can be readily achieved without atomically precise donor placement, hence it offers a practical way to prepare multipartite entanglement of spins in silicon with current technology. All desired Dicke states appear as the steady state under various pumping scenarios and therefore the preparation is robust and does not require accurate temporal controls. Numerical simulations with realistic parameters show that Dicke states of 10-20 qubits can be prepared with high fidelity in presence of decoherence and unwanted dynamics.

preprint2012arXiv

Electrical Tuning of Valley Magnetic Moment via Symmetry Control

Crystal symmetry governs the nature of electronic Bloch states. For example, in the presence of time reversal symmetry, the orbital magnetic moment and Berry curvature of the Bloch states must vanish unless inversion symmetry is broken. In certain 2D electron systems such as bilayer graphene, the intrinsic inversion symmetry can be broken simply by applying a perpendicular electric field. In principle, this offers the remarkable possibility of switching on/off and continuously tuning the magnetic moment and Berry curvature near the Dirac valleys by reversible electrical control. Here we demonstrate this principle for the first time using bilayer MoS2, which has the same symmetry as bilayer graphene but has a bandgap in the visible that allows direct optical probing of these Berry-phase related properties. We show that the optical circular dichroism, which reflects the orbital magnetic moment in the valleys, can be continuously tuned from -15% to 15% as a function of gate voltage in bilayer MoS2 field-effect transistors. In contrast, the dichroism is gate-independent in monolayer MoS2, which is structurally non-centrosymmetric. Our work demonstrates the ability to continuously vary orbital magnetic moments between positive and negative values via symmetry control. This represents a new approach to manipulating Berry-phase effects for applications in quantum electronics associated with 2D electronic materials.

preprint2012arXiv

Fault-Tolerant Exact State Transmission

We show that a category of one-dimensional XY-type models may enable high-fidelity quantum state transmissions, regardless of details of coupling configurations. This observation leads to a fault- tolerant design of a state transmission setup. The setup is fault-tolerant, with specified thresholds, against engineering failures of coupling configurations, fabrication imperfections or defects, and even time-dependent noises. We propose the implementation of the fault-tolerant scheme using hard-core bosons in one-dimensional optical lattices.

preprint2012arXiv

Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study

Using first-principles calculations within density functional theory, we investigate the intrinsic spin Hall effect in monolayers of group-VI transition-metal dichalcogenides MX2 (M = Mo, W and X = S, Se). MX2 monolayers are direct band-gap semiconductors with two degenerate valleys located at the corners of the hexagonal Brillouin zone. Because of the inversion symmetry breaking and the strong spin-orbit coupling, charge carriers in opposite valleys carry opposite Berry curvature and spin moment, giving rise to both a valley- and a spin-Hall effect. The intrinsic spin Hall conductivity (ISHC) in p-doped samples is found to be much larger than the ISHC in n-doped samples due to the large spin-splitting at the valence band maximum. We also show that the ISHC in inversion-symmetric bulk dichalcogenides is an order of magnitude smaller compared to monolayers. Our result demonstrates monolayer dichalcogenides as an ideal platform for the integration of valleytronics and spintronics.

preprint2012arXiv

Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides

Motivated by the triumph and limitation of graphene for electronic applications, atomically thin layers of group VI transition metal dichalcogenides are attracting extensive interest as a class of graphene-like semiconductors with a desired band-gap in the visible frequency range. The monolayers feature a valence band spin splitting with opposite sign in the two valleys located at corners of 1st Brillouin zone. This spin-valley coupling, particularly pronounced in tungsten dichalcogenides, can benefit potential spintronics and valleytronics with the important consequences of spin-valley interplay and the suppression of spin and valley relaxations. Here we report the first optical studies of WS2 and WSe2 monolayers and multilayers. The efficiency of second harmonic generation shows a dramatic even-odd oscillation with the number of layers, consistent with the presence (absence) of inversion symmetry in even-layer (odd-layer). Photoluminescence (PL) measurements show the crossover from an indirect band gap semiconductor at mutilayers to a direct-gap one at monolayers. The PL spectra and first-principle calculations consistently reveal a spin-valley coupling of 0.4 eV which suppresses interlayer hopping and manifests as a thickness independent splitting pattern at valence band edge near K points. This giant spin-valley coupling, together with the valley dependent physical properties, may lead to rich possibilities for manipulating spin and valley degrees of freedom in these atomically thin 2D materials.

preprint2012arXiv

Quantum-Enhanced Tunable Second-Order Optical Nonlinearity in Bilayer Graphene

Second order optical nonlinear processes involve the coherent mixing of two electromagnetic waves to generate a new optical frequency, which plays a central role in a variety of applications, such as ultrafast laser systems, rectifiers, modulators, and optical imaging. However, progress is limited in the mid-infrared (MIR) region due to the lack of suitable nonlinear materials. It is desirable to develop a robust system with a strong, electrically tunable second order optical nonlinearity. Here we demonstrate theoretically that AB-stacked bilayer graphene (BLG) can exhibit a giant and tunable second order nonlinear susceptibility χ^(2) once an in-plane electric field is applied. χ^(2) can be electrically tuned from 0 to ~ {10^5 pm/V}, three orders of magnitude larger than the widely used nonlinear crystal AgGaSe2. We show that the unusually large χ^(2) arises from two different quantum enhanced two-photon processes thanks to the unique electronic spectrum of BLG. The tunable electronic bandgap of BLG adds additional tunability on the resonance of χ^(2), which corresponds to a tunable wavelength ranging from ~2.6 μm to ~3.1 μm for the up-converted photon. Combined with the high electron mobility and optical transparency of the atomically thin BLG, our scheme suggests a new regime of nonlinear photonics based on BLG.

preprint2012arXiv

Valley polarization in MoS2 monolayers by optical pumping

We report experimental evidences on selective occupation of the degenerate valleys in MoS2 monolayers by circularly polarized optical pumping. Over 30% valley polarization has been observed at K and K' valley via the polarization resolved luminescence spectra on pristine MoS2 monolayers. It demonstrates one viable way to generate and detect valley polarization towards the conceptual valleytronics applications with information carried by the valley index.

preprint2011arXiv

Anomalous Magnetic Susceptibility and Hall Effect from Valley Degrees of Freedom

We study the magnetic and transport properties of epitaxial graphene films in this letter. We predict enhanced signal of magnetic susceptibility and relate it to the intrinsic valley magnetic moments. There is also an anomalous contribution to the ordinary Hall effect, which is due to the valley dependent Berry phase or valley-orbit coupling.

preprint2011arXiv

Generating coherent state of entangled spins

A coherent state of many spins contains quantum entanglement which increases with a decrease in the collective spin value. We present a scheme to engineer this class of pure state based on incoherent spin pumping with a few collective raising/lowering operators. In a pumping scenario aimed for maximum entanglement, the steady-state of N pumped spin qubits realizes the ideal resource for the 1 to N/2 quantum telecloning. We show how the scheme can be implemented in a realistic system of atomic spin qubits in optical lattice. Error analysis show that high fidelity state engineering is possible for N ~ O(100) spins in the presence of decoherence. The scheme can also prepare a resource state for the secret sharing protocol and for the construction of large scale Affleck-Kennedy-Lieb-Tasaki (AKLT) state.

preprint2011arXiv

Many-body singlets by dynamic spin polarization

We show that dynamic spin polarization by collective raising and lowering operators can drive a spin ensemble from arbitrary initial state to many-body singlets, the zero-collective-spin states with large scale entanglement. For an ensemble of $N$ arbitrary spins, both the variance of the collective spin and the number of unentangled spins can be reduced to O(1) (versus the typical value of O(N)), and many-body singlets can be occupied with a population of $\sim 20 %$ independent of the ensemble size. We implement this approach in a mesoscopic ensemble of nuclear spins through dynamic nuclear spin polarization by an electron. The result is of two-fold significance for spin quantum technology: (1) a resource of entanglement for nuclear spin based quantum information processing; (2) a cleaner surrounding and less quantum noise for the electron spin as the environmental spin moments are effectively annihilated.

preprint2011arXiv

New Aspects of Photocurrent Generation at Graphene pn Junctions Revealed by Ultrafast Optical Measurements

The unusual electrical and optical properties of graphene make it a promising candidate for optoelectronic applications. An important, but as yet unexplored aspect is the role of photo-excited hot carriers in charge and energy transport at graphene interfaces. Here, we perform time-resolved (~250 fs) scanning photocurrent microscopy on a tunable graphene pn junction. The ultrafast pump-probe measurements yield a photocurrent response time of ~1.5 ps at room temperature increasing to ~4 ps at 20 K. Combined with the negligible dependence of photocurrent amplitude on environmental temperature this implies that hot carriers rather than phonons dominate energy transport at high frequencies. Gate-dependent pump-probe measurements demonstrate that both thermoelectric and built-in electric field effects contribute to the photocurrent excited by laser pulses. The relative weight of each contribution depends on the junction configuration. A single laser beam excitation also displays multiple polarity-reversals as a function of carrier density, a signature of impact ionization. Our results enhance the understanding of non-equilibrium electron dynamics, electron-electron interactions, and electron-phonon interactions in graphene. They also determine fundamental limits on ultrafast device operation speeds (~500 GHz) for potential graphene-based photon detection, sensing, and communication.

preprint2010arXiv

Feedback control of nuclear hyperfine fields in double quantum dot

In a coupled double quantum dot system, we present a theory for the interplay between electron and nuclear spins when the two-electron singlet state is brought into resonance with one triplet state in moderate external magnetic field. We show that the quantum interference between first order and second order hyperfine processes can lead to a feedback mechanism for manipulating the nuclear hyperfine fields. In a uniform external field, positive and negative feedback controls can be realized for the gradient of the longitudinal hyperfine field as well as the average transverse hyperfine field in the double dot. The negative feedback which suppresses fluctuations in the longitudinal nuclear field gradient can enhance the decoherence time of singlet-triplet qubit to microsecond regime. We discuss the possibility of enhancing the decoherence time of each individual spin in a cluster of dots using the negative feedback control on the transverse nuclear field.

preprint2010arXiv

Massive Dirac fermions and spin physics in an ultrathin film of topological insulator

We study transport and optical properties of the surface states which lie in the bulk energy gap of a thin-film topological insulator. When the film thickness is comparable with the surface state decay length into the bulk, the tunneling between the top and bottom surfaces opens an energy gap and form two degenerate massive Dirac hyperbolas. Spin dependent physics emerges in the surface bands which are vastly different from the bulk behavior. These include the surface spin Hall effects, spin dependent orbital magnetic moment, and spin dependent optical transition selection rule which allows optical spin injection. We show a topological quantum phase transition where the Chern number of the surface bands changes when varying the thickness of the thin film.

preprint2010arXiv

Quantum computing by optical control of electron spins

We review the progress and main challenges in implementing large-scale quantum computing by optical control of electron spins in quantum dots (QDs). Relevant systems include self-assembled QDs of III-V or II-VI compound semiconductors (such as InGaAs and CdSe), monolayer fluctuation QDs in compound semiconductor quantum wells, and impurity centers in solids such as P-donors in silicon and nitrogen-vacancy centers in diamond. The decoherence of the electron spin qubits is discussed and various schemes for countering the decoherence problem are reviewed. We put forward designs of local nodes consisting of a few qubits which can be individually addressed and controlled. Remotely separated local nodes are connected by photonic structures (microcavities and waveguides) to form a large-scale distributed quantum system or a quantum network. The operation of the quantum network consists of optical control of a single electron spin, coupling of two spins in a local nodes, optically controlled quantum interfacing between stationary spin qubits in QDs and flying photon qubits in waveguides, rapid initialization of spin qubits, and qubit-specific single-shot non-demolition quantum measurement. The rapid qubit initialization may be realized by selectively enhancing certain entropy dumping channels via phonon or photon baths. The single-shot quantum measurement may be in-situ implemented through the integrated photonic network. The relevance of quantum non-demolition measurement to large-scale quantum computation is discussed. To illustrate the feasibility and demand, the resources are estimated for the benchmark problem of factorizing 15 with Shor's algorithm.

preprint2007arXiv

Control of electron spin decoherence caused by electron-nuclear spin dynamics in a quantum dot

Control of electron spin decoherence in contact with a mesoscopic bath of many interacting nuclear spins in an InAs quantum dot is studied by solving the coupled quantum dynamics. The nuclear spin bath, because of its bifurcated evolution predicated on the electron spin up or down state, measures the which-state information of the electron spin and hence diminishes its coherence. The many-body dynamics of nuclear spin bath is solved with a pair-correlation approximation. In the relevant timescale, nuclear pair-wise flip-flops, as elementary excitations in the mesoscopic bath, can be mapped into the precession of non-interacting pseudo-spins. Such mapping provides a geometrical picture for understanding the decoherence and for devising control schemes. A close examination of nuclear bath dynamics reveals a wealth of phenomena and new possibilities of controlling the electron spin decoherence. For example, when the electron spin is flipped by a $π$-pulse at $τ$, its coherence will partially recover at $\sqrt{2}τ$ as a consequence of quantum disentanglement from the mesoscopic bath. In contrast to the re-focusing of inhomogeneously broadened phases by conventional spin-echoes, the disentanglement is realized through shepherding quantum evolution of the bath state via control of the quantum object. A concatenated construction of pulse sequences can eliminate the decoherence with arbitrary accuracy, with the nuclear-nuclear spin interaction strength acting as the controlling small parameter.

preprint2007arXiv

Valley contrasting physics in graphene: magnetic moment and topological transport

We investigate physical properties that can be used to distinguish the valley degree of freedom in systems where inversion symmetry is broken, using graphene systems as examples. We show that the pseudospin associated with the valley index of carriers has an intrinsic magnetic moment, in close analogy with the Bohr magneton for the electron spin. There is also a valley dependent Berry phase effect that can result in a valley contrasting Hall transport, with carriers in different valleys turning into opposite directions transverse to an in-plane electric field. These effects can be used to generate and detect valley polarization by magnetic and electric means, forming the basis for the so-called valley-tronics applications.

preprint2006arXiv

Single Electron Spin Decoherence by Nuclear Spin Bath: Linked Cluster Expansion Approach

We develop a theoretical model for transverse dynamics of a single electron spin interacting with a nuclear spin bath. The approach allows a simple diagrammatic representation and analytical expressions of different nuclear spin excitation processes contributing to electron spin decoherence and dynamical phase fluctuations. It accounts for nuclear spin dynamics beyond conventional pair correlation models. As an illustration of the theory, we evaluated the coherence dynamics of a P donor electron spin in a Si crystal.

Wang Yao

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70 published item(s)

Electronic procrystalline state in moire structures

Unconventional ferroelectricity in half-filling states of antiparallel stacking of twisted WSe2

Anomalous Bloch oscillation and electrical switching of edge magnetization in bilayer graphene nanoribbon

Anomalous magneto-optical response and chiral interface of dipolar excitons at twisted valleys

Exceptional spin wave dynamics in an antiferromagnetic honeycomb lattice

Light-Induced Ferromagnetism in Moiré Superlattices

Ultrafast control of moiré pseudo-electromagnetic field in homobilayer semiconductors

Chiral excitonics in monolayer semiconductors on patterned dielectric

Electrically tunable topological transport of moiré polaritons

Layer pseudospin dynamics and genuine non-Abelian Berry phase in inhomogeneously strained moiré pattern

Layer-Resolved Magnetic Proximity Effect in van der Waals Heterostructures

Monolayer Semiconductor Auger Detector

Non-adiabatic Hall effect at Berry curvature hot spot

One-Dimensional Moiré Excitons in Transition-Metal Dichalcogenide Heterobilayers

Theory of tunable flux lattices in the homobilayer moiré of twisted and uniformly strained transition metal dichalcogenides

Theory of wavepacket transport under narrow gaps and spatial textures: non-adiabaticity and semiclassicality

Valley Phonons and Exciton Complexes in a Monolayer Semiconductor

Valley-selective Klein tunneling through superlattice barrier in graphene

Directional Interlayer Spin-Valley Transfer in Two-Dimensional Heterostructures

Expansion of a Valley-Polarized Exciton Cloud in a 2D Heterostructure

Spin-valley qubit in nanostructures of monolayer semiconductors: Optical control and hyperfine interaction

Anomalous light cones and valley optical selection rules of interlayer excitons in twisted heterobilayers

Berry phase modification to the energy spectrum of excitons

Electrical Control of Second-Harmonic Generation in a WSe2 Monolayer Transistor

Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides

Gate-tunable Topological Valley Transport in Bilayer Graphene

Observation of intervalley quantum interference in epitaxial monolayer WSe2

Population pulsation resonances of excitons in monolayer MoSe2 with sub 1 μeV linewidth

Ultra-Low Threshold Monolayer Semiconductor Nanocavity Lasers

Valley excitons in two-dimensional semiconductors

Visualizing Band Offsets and Edge States in Bilayer-Monolayer Transition Metal Dichalcogenides Lateral Heterojunction

Bright excitons in monolayer transition metal dichalcogenides: from Dirac cones to Dirac saddle points

Dense network of one-dimensional mid-gap metallic modes in monolayer MoSe2 and their spatial undulations

Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions

Intervalley coupling by quantum dot confinement potentials in monolayer transition metal dichalcogenides

Lateral heterojunctions within monolayer semiconductors

Magnetic Control of Valley Pseudospin in Monolayer WSe2

Magnetisms in $p$-type monolayer gallium chalcogenides (GaSe, GaS)

Nonlinear valley and spin currents from Fermi pocket anisotropy in 2D crystals

Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures

Single Quantum Emitters in Monolayer Semiconductors

Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides

Valley Contrasting Magnetoluminescence in Monolayer MoS$_{2}$ Quantum Hall Systems

Control of Two-Dimensional Excitonic Light Emission via Photonic Crystal

Electrical Control of Two-Dimensional Neutral and Charged Excitons in a Monolayer Semiconductor

Intervalley Scattering and Localization Behaviors of Spin-Valley Coupled Dirac Fermions

Magnetic control of the valley degree of freedom of massive Dirac fermions with application to transition metal dichalcogenides

Magnetoelectric effects and valley controlled spin quantum gates in transition metal dichalcogenide bilayers

Majorana Fermions on Zigzag Edge of Monolayer Transition Metal Dichalcogenides

Optical Generation of Excitonic Valley Coherence in Monolayer WSe2

Protecting dissipative quantum state preparation via dynamical decoupling

Spin-Layer Locking Effects in Optical Orientation of Exciton Spin in Bilayer WSe2

Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides

Deterministic preparation of Dicke states of donor nuclear spins in silicon by cooperative pumping

Electrical Tuning of Valley Magnetic Moment via Symmetry Control

Fault-Tolerant Exact State Transmission

Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study

Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides

Quantum-Enhanced Tunable Second-Order Optical Nonlinearity in Bilayer Graphene

Valley polarization in MoS2 monolayers by optical pumping

Anomalous Magnetic Susceptibility and Hall Effect from Valley Degrees of Freedom

Generating coherent state of entangled spins

Many-body singlets by dynamic spin polarization

New Aspects of Photocurrent Generation at Graphene pn Junctions Revealed by Ultrafast Optical Measurements

Feedback control of nuclear hyperfine fields in double quantum dot

Massive Dirac fermions and spin physics in an ultrathin film of topological insulator

Quantum computing by optical control of electron spins

Control of electron spin decoherence caused by electron-nuclear spin dynamics in a quantum dot

Valley contrasting physics in graphene: magnetic moment and topological transport

Single Electron Spin Decoherence by Nuclear Spin Bath: Linked Cluster Expansion Approach