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Wang Yao

Wang Yao contributes to research discovery and scholarly infrastructure.

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Published work

18 published item(s)

preprint2026arXiv

Electronic procrystalline state in moire structures

Solid state materials can display varieties of atomic structural orders ranging from crystalline to amorphous, underlying their properties and diverse functionalities. Procrystal has emerged as a new category of solids, featuring a long-range ordered lattice framework tiled with disordered atomic or molecular structures on the lattice sites, arousing great interest due to its novel structural and physical properties. However, the electronic analogue of a procrystal, dubbed as an electronic procrystalline (EPC) state, has never been experimentally observed. Here, we report the observation of an EPC state in a moire superstructure formed between a monolayer metallic NiTe2 and a superconductor NbSe2 with incommensurate lattice wavevectors. The observed EPC state exhibits a long-range periodic charge modulation at the moire scale inlaid with short-range irregular orders within each moire cell. Strikingly, the short-range charge orders inside the moire unit cells have proximately root3*root3 quasi-period, which is absent in pristine NiTe2. Intriguingly, the EPC order is also observed in the superconducting state of the moire superstructure. Furthermore, the emergent EPC state and short-range charge order, coexisting with the proximity induced superconductivity, can be precisely modulated with the thickness of NiTe2. Our findings uncover the potential of moire platform for understanding and tuning novel correlated quantum phases with this exotic procrystalline order.

preprint2023arXiv

Unconventional ferroelectricity in half-filling states of antiparallel stacking of twisted WSe2

Abstract: We report on emergence of an abnormal electronic polarization in twisted double bilayer WSe2 in antiparallel interface stacking geometry, where local centrosymmetry of atomic registries at the twist interface does not favor the spontaneous electronic polarizations as recently observed in the parallel interface stacking geometry. The unconventional ferroelectric behaviors probed by electronic transport measurement occur at half filling insulating states at 1.5 K and gradually disappear at about 40 K. Single band Hubbard model based on the triangular moiré lattice and the interlayer charge transfer controlled by insulating phase transition are proposed to interpret the formation of electronic polarization states near half filling in twisted WSe2 devices. Our work highlights the prominent role of many-body electronic interaction in fostering novel quantum states in moiré-structured systems.

preprint2022arXiv

Anomalous Bloch oscillation and electrical switching of edge magnetization in bilayer graphene nanoribbon

Graphene features topological edge bands that connect the pair of Dirac points through either sectors of the 1D Brillouin zone depending on edge configurations (zigzag or bearded). Because of their flat dispersion, spontaneous edge magnetisation can arise from Coulomb interaction in graphene nanoribbons, which has caught remarkable interest. We find an anomalous Bloch oscillation in such edge bands, in which the flat dispersion freezes electron motion along the field direction, while the topological connection of the bands through the bulk leads to electron oscillation in the transverse direction between edges of different configurations on opposite sides/layers of a bilayer ribbon. Our Hubbard-model mean-field calculation shows that this phenomenon can be exploited for electrical switching of edge magnetisation configurations.

preprint2022arXiv

Anomalous magneto-optical response and chiral interface of dipolar excitons at twisted valleys

An anomalous magneto-optical spectrum is discovered for dipolar valley excitons in twisted double layer transition metal dichalcogenides (TMD), where in-plane magnetic field induces a sizable multiplet splitting of exciton states inside the light cone. Chiral dispersions of the split branches make possible efficient optical injection of unidirectional exciton current. We also find an analog effect with a modest heterostrain replacing the magnetic field for introducing large splitting and chiral dispersions in the light cone. Angular orientation of photo-injected exciton flow can be controlled by strain, with left-right unidirectionality selected by circular polarisation.

preprint2022arXiv

Exceptional spin wave dynamics in an antiferromagnetic honeycomb lattice

We theoretically investigate possible effects of electric current on the spin wave dynamics for the Néel-type antiferromagnetic order in a honeycomb lattice. Based on a general vector decomposition of the spin polarization of conduction electrons, we find that there can exist reciprocal and nonreciprocal terms in the current-induced torque acting on the local spins in the system. Furthermore, we show that the reciprocal terms will cause the spin wave Doppler effect, while the nonreciprocal terms can induce rich non-Hermitian topological phenomena in the spin wave dynamics, including exceptional points, bulk Fermi arc, non-Hermitian skin effect, etc. Our results indicate the capability to manipulate non-Hermitian magnons in magnetic materials by electric current, which could be important for both fundamental physics and technology applications.

preprint2022arXiv

Light-Induced Ferromagnetism in Moiré Superlattices

Many-body interactions between carriers lie at the heart of correlated physics. The ability to tune such interactions would open the possibility to access and control complex electronic phase diagrams on demand. Recently, moiré superlattices formed by two-dimensional materials have emerged as a promising platform for quantum engineering such phenomena. The power of the moiré system lies in the high tunability of its physical parameters by tweaking layer twist angle, electrical field, moiré carrier filling, and interlayer coupling. Here, we report that optical excitation can drastically tune the spin-spin interactions between moiré trapped carriers, resulting in ferromagnetic order in WS2/WSe2 moiré superlattices over a small range of doping at elevated temperatures. Near the filling factor v = -1/3 (i.e., one hole per three moiré unit cells), as the excitation power at the exciton resonance increases, a well-developed hysteresis loop emerges in the reflective magnetic circular dichroism (RMCD) signal as a function of magnetic field, a hallmark of ferromagnetism. The hysteresis loop persists down to charge neutrality, and its shape evolves as the moiré superlattice is gradually filled, indicating changes of magnetic ground state properties. The observed phenomenon points to a mechanism in which itinerant photo-excited excitons mediate exchange coupling between moiré trapped holes. This exciton-mediated interaction can be of longer range than direct coupling between moiré trapped holes, and thus magnetic order can arise even in the dilute hole regime under optical excitation. This discovery adds a new and dynamic tuning knob to the rich many-body Hamiltonian of moiré quantum matter.

preprint2022arXiv

Ultrafast control of moiré pseudo-electromagnetic field in homobilayer semiconductors

In long-wavelength moiré patterns of homobilayer semiconductors, the layer pseudospin of electrons is subject to a sizable Zeeman field that is spatially modulated from the interlayer coupling in moiré. By interference of this spatial modulation with a homogeneous but dynamically tunable component from out-of-plane electric field, we show that the spatial-temporal profile of the overall Zeeman field therefore features a topological texture that can be controlled in an ultrafast timescale by a terahertz field or an interlayer bias. Such dynamical modulation leads to the emergence of an in-plane electric field for low energy carriers, which is related to their real space Berry curvature -- the moiré magnetic field -- through the Faraday's law of induction. These emergent electromagnetic fields, having opposite signs at the time reversal pair of valleys, can be exploited to manipulate valley and spin in the moiré landscape under the control by a bias pulse or a terahertz irradiation.

preprint2021arXiv

Chiral excitonics in monolayer semiconductors on patterned dielectric

Monolayer transition metal dichalcogenides feature tightly bound bright excitons at the degenerate valleys, where electron-hole Coulomb exchange interaction strongly couples the valley pseudospin to the momentum of exciton. Placed on periodically structured dielectric substrate, the spatial modulation of the Coulomb interaction leads to the formation of exciton Bloch states with real-space valley pseudospin texture displayed in a mesoscopic supercell. We find this spatial valley texture in the exciton Bloch function is pattern-locked to the propagation direction, enabling nano-optical excitation of directional exciton flow through the valley selection rule. The left-right directionality of the injected exciton current is controlled by the circular polarization of excitation, while the angular directionality is controlled by the excitation location, exhibiting a vortex pattern in a supercell. The phenomenon is reminiscent of the chiral light-matter interaction in nano-photonics structures, with the role of the guided electromagnetic wave now replaced by the valley-orbit coupled exciton Bloch wave in a uniform monolayer, which points to new excitonic devices with non-reciprocal functionalities.

preprint2020arXiv

Electrically tunable topological transport of moiré polaritons

Moiré interlayer exciton in transition metal dichalcogenide heterobilayer features a permanent electric dipole that enables the electrostatic control of its flow, and optical dipole that is spatially varying in the moiré landscape. We show the hybridization of moiré interlayer exciton with photons in a planar 2D cavity leads to two types of moiré polaritons that exhibit distinct forms of topological transport phenomena including the spin/valley Hall and polarization Hall effects, which feature remarkable electrical tunability through the control of exciton-cavity detuning by the interlayer bias.

preprint2020arXiv

Layer pseudospin dynamics and genuine non-Abelian Berry phase in inhomogeneously strained moiré pattern

Periodicity of long wavelength moiré patterns is very often destroyed by the inhomogeneous strain introduced in fabrications of van der Waals layered structures. We present a framework to describe massive Dirac fermions in such distorted moiré pattern of transition metal dichalcogenides homobilayers, accounting for the dynamics of layer pseudospin. In decoupled bilayers, we show two causes of in-plane layer pseudospin precession: By the coupling of layer antisymmetric strain to valley magnetic moment; and by the Aharonov-Bohm effect in the SU(2) gauge potential for the case of R-type bilayer under antisymmetric strain and H-type under symmetric strain. With interlayer coupling in the moiré, its interplay with strain manifests as a non-Abelian gauge field. We show a genuine non-Abelian Aharonov-Bohm effect in such field, where the evolution operators for different loops are non-commutative. This provides an exciting platform to explore non-Abelian gauge field effects on electron, with remarkable tunability of the field by strain and interlayer bias.

preprint2020arXiv

Layer-Resolved Magnetic Proximity Effect in van der Waals Heterostructures

Magnetic proximity effects are crucial ingredients for engineering spintronic, superconducting, and topological phenomena in heterostructures. Such effects are highly sensitive to the interfacial electronic properties, such as electron wave function overlap and band alignment. The recent emergence of van der Waals (vdW) magnets enables the possibility of tuning proximity effects via designing heterostructures with atomically clean interfaces. In particular, atomically thin CrI3 exhibits layered antiferromagnetism, where adjacent ferromagnetic monolayers are antiferromagnetically coupled. Exploiting this magnetic structure, we uncovered a layer-resolved magnetic proximity effect in heterostructures formed by monolayer WSe2 and bi/trilayer CrI3. By controlling the individual layer magnetization in CrI3 with a magnetic field, we found that the spin-dependent charge transfer between WSe2 and CrI3 is dominated by the interfacial CrI3 layer, while the proximity exchange field is highly sensitive to the layered magnetic structure as a whole. These properties enabled us to use monolayer WSe2 as a spatially sensitive magnetic sensor to map out layered antiferromagnetic domain structures at zero magnetic field as well as antiferromagnetic/ferromagnetic domains near the spin-flip transition in bilayer CrI3. Our work reveals a new way to control proximity effects and probe interfacial magnetic order via vdW engineering.

preprint2020arXiv

Monolayer Semiconductor Auger Detector

Auger recombination in semiconductors is a many-body phenomenon in which recombination of electrons and holes is accompanied by excitation of other charge carriers. Being nonradiative, it is detrimental to light emission. The excess energy of the excited carriers is normally rapidly converted to heat, making Auger processes difficult to probe directly. Here, we employ a technique in which the Auger-excited carriers are detected by their ability to tunnel out of the semiconductor through a thin barrier, generating a current. We employ vertical van der Waals (vdW) heterostructures with monolayer WSe2 as the semiconductor and the wide band gap hexagonal boron nitride (hBN) as the tunnel barrier to preferentially transmit high-energy Auger-excited carriers to a graphite electrode. The unambiguous signatures of Auger processes are a rise in the photocurrent when excitons are created by resonant excitation, and negative differential photoconductance resulting from the shifts of the exciton resonances with voltage. We detect holes Auger-excited by both neutral and charged excitons, and find that the Auger scattering is surprisingly strong under weak excitation. The selective extraction of Auger carriers at low, controlled carrier densities that is enabled by vdW heterostructures illustrates an important addition to the techniques available for probing relaxation processes in 2D materials.

preprint2020arXiv

Non-adiabatic Hall effect at Berry curvature hot spot

Hot spot of Berry curvature is usually found at Bloch band anti-crossings, where the Hall effect due to the Berry phase can be most pronounced. With small gaps there, the adiabatic limit for the existing formulations of Hall current can be exceeded in a moderate electric field. Here we present a theory of non-adiabatic Hall effect, capturing non-perturbatively the across gap electron-hole excitations by the electric field. We find a general connection between the field induced electron-hole coherence and intrinsic Hall velocity. In coherent evolution, the electron-hole coherence can manifest as a sizeable ac Hall velocity. When environmental noise is taken into account, its joint action with the electric field favors a form of electron-hole coherence that is function of wavevector and field only, leading to a dc nonlinear Hall effect. The Hall current has all odd order terms in field, and still retains the intrinsic role of the Berry curvature. The quantitative demonstration uses the example of gapped Dirac cones, and our theory can be used to describe the bulk pseudospin Hall current in insulators with gapped edge such as graphene and 2D MnBi$_{2}$Te$_{4}$

preprint2020arXiv

One-Dimensional Moiré Excitons in Transition-Metal Dichalcogenide Heterobilayers

The formation of interfacial moiré patterns from angular and/or lattice mismatch has become a powerful approach to engineer a range of quantum phenomena in van der Waals heterostructures. For long-lived and valley-polarized interlayer excitons in transition-metal dichalcogenide (TMDC) heterobilayers, signatures of quantum confinement by the moiré landscape have been reported in recent experimental studies. Such moiré confinement has offered the exciting possibility to tailor new excitonic systems, such as ordered arrays of zero-dimensional (0D) quantum emitters and their coupling into topological superlattices. A remarkable nature of the moiré potential is its dramatic response to strain, where a small uniaxial strain can tune the array of quantum-dot-like 0D traps into parallel stripes of one-dimensional (1D) quantum wires. Here, we present direct evidence for the 1D moiré potentials from real space imaging and the corresponding 1D moiré excitons from photoluminescence (PL) emission in MoSe2/WSe2 heterobilayers. Whereas the 0D moiré excitons display quantum emitter-like sharp PL peaks with circular polarization, the PL emission from 1D moiré excitons has linear polarization and two orders of magnitude higher intensity. The results presented here establish strain engineering as a powerful new method to tailor moiré potentials as well as their optical and electronic responses on demand.

preprint2020arXiv

Theory of tunable flux lattices in the homobilayer moiré of twisted and uniformly strained transition metal dichalcogenides

The spatial texture of internal degree of freedom of electrons has profound effects on the properties of materials. Such texture in real space can manifest as an emergent magnetic field (or Berry curvature), which is expected to induce interesting valley/spin-related transport phenomena. Moiré pattern, which emerges as a spatial variation at the interface of 2D atomic crystals, provides a natural platform for investigating such real space Berry curvature effects. Here we study moiré structures formed in homobilayer transition metal dichalcogenides (TMDs) due to twisting, various uniform strain profiles, and their combinations, where electrons can reside in either layer with the layer index serving as an internal degree of freedom. The layer pseudo-spin exhibits vortex/antivortex textures in the moiré supercell, leading to a giant geometric magnetic field and a scalar potential. Within a geometric picture, the moiré magnetic field is found as the cross product of the gradients of the out-of-plane pseudo-spin and the in-plane pseudo-spin orientation respectively. We discover dual roles of uniform strain: Besides being a cause of the moire atomic texture in the homobilayer, it also contributes a pseudo-gauge potential that modifies the local phase of interlayer coupling. Consequently, strain can be employed to tune the in-plane pseudo-spin texture, while interlayer bias tunes the out-of-plane pseudo-spin, and we show how the moiré magnetic field's spatial profile, intensity, and flux per supercell can be engineered. Through the geometric scalar correction, the landscape of the scalar potential can also be engineered along with the moiré magnetic field, forming distinct effective lattice structures. These properties render TMD moiré structures promising to build tunable flux lattices for transport and topological material applications.

preprint2020arXiv

Theory of wavepacket transport under narrow gaps and spatial textures: non-adiabaticity and semiclassicality

We generalise the celebrated semiclassical wavepacket approach from the adiabatic to the non-adiabatic regime. A unified description covering both of these regimes is particularly desired for systems with spatially varying band structures where band gaps of various sizes are simultaneously present, e.g. in moiré patterns. For a single wavepacket, alternative to the previous derivation by Lagrangian variational approach, we show that the same semiclassical equations of motion can be obtained by introducing a spatial-texture-induced force operator similar to the Ehrenfest theorem. For semiclassically computing the current, the ensemble of wavepackets based on adiabatic dynamics is shown to well correspond to a phase-space fluid for which the fluid's mass and velocity are two distinguishable properties. This distinction is not inherited to the ensemble of wavepackets with the non-adiabatic dynamics. We extend the adiabatic kinetic theory to the non-adiabatic regime by taking into account decoherence, whose joint action with electric field favours certain form of inter-band coherence. The steady-state density matrix as a function of the phase-space variables is then phenomenologically obtained for calculating the transport current. The result, applicable with a finite electric field, expectedly reproduces the known adiabatic limit by taking the electric field to be infinitesimal, and therefore attains a unified description from the adiabatic to the non-adiabatic situations.

preprint2020arXiv

Valley Phonons and Exciton Complexes in a Monolayer Semiconductor

The coupling between spin, charge, and lattice degrees of freedom plays an important role in a wide range of fundamental phenomena. Monolayer semiconducting transitional metal dichalcogenides have emerged as an outstanding platform for studying these coupling effects because they possess unique spin-valley locking physics for hosting rich excitonic species and the reduced screening for strong Coulomb interactions. Here, we report the observation of multiple valley phonons, phonons with momentum vectors pointing to the corners of the hexagonal Brillouin zone, and the resulting exciton complexes in the monolayer semiconductor WSe2. From Lande g-factor and polarization analyses of photoluminescence peaks, we find that these valley phonons lead to efficient intervalley scattering of quasi particles in both exciton formation and relaxation. This leads to a series of photoluminescence peaks as valley phonon replicas of dark trions. Using identified valley phonons, we also uncovered an intervalley exciton near charge neutrality, and extract its short-range electron-hole exchange interaction to be about 10 meV. Our work not only identifies a number of previously unknown 2D excitonic species, but also shows that monolayer WSe2 is a prime candidate for studying interactions between spin, pseudospin, and zone-edge phonons.

preprint2019arXiv

Valley-selective Klein tunneling through superlattice barrier in graphene

Graphene electrons feature a pair of massless Dirac cones of opposite pseudospin chirality at two valleys. Klein tunneling refers to the intriguing capability of these chiral electrons to penetrate through high and wide potential barrier. The two valleys have been treated independently in the literature, where time reversal symmetry dictates that neither the normal incidence transmission nor the angle-averaged one can have any valley polarization. Here we show that, when intervalley scattering by barrier is accounted, graphene electrons normally incident at a superlattice barrier can experience a fully valley-selective Klein tunneling, i.e. perfect transmission in one valley, and perfect reflection in the other. Intervalley backscattering creates staggered pseudospin gaps in the superlattice barrier, which, combined with the valley contrast in pseudospin chirality, determines the valley polarity of Klein tunneling. The angle averaged transmission can have a net valley polarization of 20% for a 5-period barrier, and exceed 75% for a 20-period barrier. Our finding points to an unexpected opportunity to realize valley functionalities in graphene electronics.