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Researcher profile

Wen-Hao Chang

Wen-Hao Chang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.app-phcond-mat.mtrl-sciphysics.opticscond-mat.mes-hallcond-mat.str-el

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Published work

5 published item(s)

preprint2022arXiv

Exciton-Driven Renormalization of Quasiparticle Band Structure in Monolayer MoS2

Optical excitation serves as a powerful approach to control the electronic structure of layered Van der Waals materials via many-body screening effects, induced by photoexcited free carriers, or via light-driven coherence, such as optical Stark and Bloch-Siegert effects. Although theoretical work has also pointed to an exotic mechanism of renormalizing band structure via excitonic correlations in bound electron-hole pairs (excitons), experimental observation of such exciton-driven band renormalization and the full extent of their implications is still lacking, largely due to the limitations of optical probes and the impact of screening effects. Here, by using extreme-ultraviolet time-resolved angle-resolved photoemission spectroscopy together with excitonic many-body theoretical calculations, we directly unmask the band renormalization effects driven by excitonic correlations in a monolayer semiconductor. We revealed a surprising bandgap opening, increased by 40 meV, and a simultaneous enhancement of band effective mass. Our findings unmask the novel exciton-driven mechanism towards the band engineering in photoexcited semiconducting materials, opening a new playground to manipulate the transient energy states in layered quantum materials via optical controls of excitonic many-body correlations.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Homoepitaxy of rhombohedral-stacked MoS2 with room temperature switchable ferroelectricity

The discovery of interfacial ferroelectricity in two-dimensional rhombohedral (3R)-stacked semiconductors opens up a new pathway for achieving ultrathin computing-in-memory devices. However, exploring ferroelectricity switching in natural 3R crystals is difficult due to lack of co-existing 3R stacking domains. Here, we present that MoS2 homoepitaxial patterns with 3R polytypic domains can manifest switchable ferroelectricity at room-temperature. Based on the diffusion limited aggregation theory, such MoS2 patterns are formed under the low Mo chemical potential and low temperature with respect to common chemical vapor deposition synthesis. The alternation of 3R polytypes in the MoS2 homoepitaxial patterns, observed by scanning transmission electron microscopy, accounts for ferroelectricity switching. The MoS2 field-effect transistors with 3R polytypic domains exhibit a repeatable counterclockwise hysteresis with gate voltage sweeping, an indication of ferroelectricity switching, and the memory window exceeds those measured for compact-shaped 3R bilayer devices. This work provides a direct growth concept for layered 3R-based ferroelectric memory.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Ultrafast Laser Ablation, Intrinsic Threshold, and Nanopatterning of Monolayer Molybdenum Disulfide

Laser direct writing is an attractive method for patterning 2D materials without contamination. Literature shows that the femtosecond ablation threshold of graphene across substrates varies by an order of magnitude. Some attribute it to the thermal coupling to the substrates, but it remains by and large an open question. For the first time the effect of substrates on femtosecond ablation of 2D materials is studied using MoS$_{2}$ as an example. We show unambiguously that femtosecond ablation of MoS$_{2}$ is an adiabatic process with negligible heat transfer to the substrates. The observed threshold variation is due to the etalon effect which was not identified before for the laser ablation of 2D materials. Subsequently, an intrinsic ablation threshold is proposed as a true threshold parameter for 2D materials. Additionally, we demonstrate for the first time femtosecond laser patterning of monolayer MoS$_{2}$ with sub-micron resolution and mm/s speed. Moreover, engineered substrates are shown to enhance the ablation efficiency, enabling patterning with low-power femtosecond oscillators. Finally, a zero-thickness approximation is introduced to predict the field enhancement with simple analytical expressions. Our work clarifies the role of substrates on ablation and firmly establishes femtosecond laser ablation as a viable route to pattern 2D materials.

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preprint2021arXiv

Ultrafast Multi-Shot Ablation and Defect Generation in Monolayer Transition Metal Dichalcogenides

Transition metal dichalcogenides are known to possess large optical nonlinearities and driving these materials at high intensities is desirable for many applications. Understanding their optical responses under repetitive intense excitation is essential to improve the performance limit of these strong-field devices and to achieve efficient laser patterning. Here, we report the incubation study of monolayer MoS${}_{2}$ and WS${}_{2}$ induced by 160 fs, 800 nm pulses in air to examine how their ablation threshold scales with the number of admitted laser pulses. Both materials were shown to outperform graphene and most bulk materials; specifically, MoS${}_{2}$ is as resistant to radiation degradation as the best of the bulk thin films with a record fast saturation. Our modeling provides convincing evidence that the small reduction in threshold and fast saturation of MoS${}_{2}$ originates in its excellent bonding integrity against radiation-induced softening. Sub-ablation damages, in the forms of vacancies, lattice disorder, and nano-voids, were revealed by transmission electron microscopy, photoluminescence, Raman, and second harmonic generation studies, which were attributed to the observed incubation. For the first time, a sub-ablation damage threshold is identified for monolayer MoS${}_{2}$ to be 78% of single-shot ablation threshold, below which MoS${}_{2}$ remains intact for many laser pulses. Our results firmly establish MoS${}_{2}$ as a robust material for strong-field devices and for high-throughput laser patterning.

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preprint2020arXiv

Ultralow Schottky Barriers in hBN-Encapsulated Monolayer WSe$_2$ Tunnel Field-Effect Transistors

To explore the potential of field-effect transistors (FETs) based on monolayers of the two-dimensional semiconducting channel(SC) for spintronics, the two most important issues are to ensure the formation of variable low resistive tunnel ferromagnetic contacts(FC), and to preserve intrinsic properties of the SC during fabrication. Large Schottky barriers lead to the formation of high resistive contacts and methods adopted to control the barriers often alter the intrinsic properties of the SC. This work aims at addressing both issues in fully encapsulated monolayer WSe$_2$ FETs by using bi-layer h-BN as a tunnel barrier at the FC/SC interface. We investigate the electrical transport in monolayer WSe$_2$ FETs with current-in-plane geometry that yields hole mobilities $\sim$ 38.3 $cm^{2}V^{-1}s^{-1}$ at 240 K and On/Off ratios of the order of 10$^7$, limited by the contact regions. We have achieved ultralow effective Schottky barrier ($\sim$ 5.34 meV) with encapsulated tunneling device as opposed to a non-encapsulated device in which the barrier heights are considerably higher. These observations provide an insight into the electrical behavior of the FC/h-BN/SC/h-BN heterostructures and such control over the barrier heights opens up the possibilities for WSe$_2$-based spintronic devices.

0 citations0 reviewsNo code linkedOpen access