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Arpit Dave

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2 publications

preprint2021arXiv

Ultrafast Laser Ablation, Intrinsic Threshold, and Nanopatterning of Monolayer Molybdenum Disulfide

Laser direct writing is an attractive method for patterning 2D materials without contamination. Literature shows that the femtosecond ablation threshold of graphene across substrates varies by an order of magnitude. Some attribute it to the thermal coupling to the substrates, but it remains by and large an open question. For the first time the effect of substrates on femtosecond ablation of 2D materials is studied using MoS2_{2} as an example. We show unambiguously that femtosecond ablation of MoS2_{2} is an adiabatic process with negligible heat transfer to the substrates. The observed threshold variation is due to the etalon effect which was not identified before for the laser ablation of 2D materials. Subsequently, an intrinsic ablation threshold is proposed as a true threshold parameter for 2D materials. Additionally, we demonstrate for the first time femtosecond laser patterning of monolayer MoS2_{2} with sub-micron resolution and mm/s speed. Moreover, engineered substrates are shown to enhance the ablation efficiency, enabling patterning with low-power femtosecond oscillators. Finally, a zero-thickness approximation is introduced to predict the field enhancement with simple analytical expressions. Our work clarifies the role of substrates on ablation and firmly establishes femtosecond laser ablation as a viable route to pattern 2D materials.

preprint2021arXiv

Ultrafast Multi-Shot Ablation and Defect Generation in Monolayer Transition Metal Dichalcogenides

Transition metal dichalcogenides are known to possess large optical nonlinearities and driving these materials at high intensities is desirable for many applications. Understanding their optical responses under repetitive intense excitation is essential to improve the performance limit of these strong-field devices and to achieve efficient laser patterning. Here, we report the incubation study of monolayer MoS2{}_{2} and WS2{}_{2} induced by 160 fs, 800 nm pulses in air to examine how their ablation threshold scales with the number of admitted laser pulses. Both materials were shown to outperform graphene and most bulk materials; specifically, MoS2{}_{2} is as resistant to radiation degradation as the best of the bulk thin films with a record fast saturation. Our modeling provides convincing evidence that the small reduction in threshold and fast saturation of MoS2{}_{2} originates in its excellent bonding integrity against radiation-induced softening. Sub-ablation damages, in the forms of vacancies, lattice disorder, and nano-voids, were revealed by transmission electron microscopy, photoluminescence, Raman, and second harmonic generation studies, which were attributed to the observed incubation. For the first time, a sub-ablation damage threshold is identified for monolayer MoS2{}_{2} to be 78% of single-shot ablation threshold, below which MoS2{}_{2} remains intact for many laser pulses. Our results firmly establish MoS2{}_{2} as a robust material for strong-field devices and for high-throughput laser patterning.

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