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Researcher profile

Weisheng Zhao

Weisheng Zhao contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.app-phcond-mat.mes-hallcond-mat.mtrl-sciHardware ArchitectureEmerging TechnologiesComputer VisionMachine LearningArtificial Intelligencecs.CYeess.SPmath.COmath.NANumerical Analysisphysics.data-anphysics.optics

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Published work

27 published item(s)

preprint2023arXiv

Kagomerization of transition metal monolayers induced by two-dimensional hexagonal boron nitride

The kagome lattice is an exciting solid state physics platform for the emergence of nontrivial quantum states driven by electronic correlations: topological effects, unconventional superconductivity, charge and spin density waves, and unusual magnetic states such as quantum spin liquids. While kagome lattices have been realized in complex multi-atomic bulk compounds, here we demonstrate from first-principles a process that we dub kagomerization, in which we fabricate a two-dimensional kagome lattice in monolayers of transition metals utilizing a hexagonal boron nitride (h-BN) overlayer. Surprisingly, h-BN induces a large rearrangement of the transition metal atoms supported on a fcc(111) heavy-metal surface. This reconstruction is found to be rather generic for this type of heterostructures and has a profound impact on the underlying magnetic properties, ultimately stabilizing various topological magnetic solitons such as skyrmions and bimerons. Our findings call for a reconsideration of h-BN as merely a passive capping layer, showing its potential for not only reconstructing the atomic structure of the underlying material, e.g. through the kagomerization of magnetic films, but also enabling electronic and magnetic phases that are highly sought for the next generation of device technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Eventor: An Efficient Event-Based Monocular Multi-View Stereo Accelerator on FPGA Platform

Event cameras are bio-inspired vision sensors that asynchronously represent pixel-level brightness changes as event streams. Event-based monocular multi-view stereo (EMVS) is a technique that exploits the event streams to estimate semi-dense 3D structure with known trajectory. It is a critical task for event-based monocular SLAM. However, the required intensive computation workloads make it challenging for real-time deployment on embedded platforms. In this paper, Eventor is proposed as a fast and efficient EMVS accelerator by realizing the most critical and time-consuming stages including event back-projection and volumetric ray-counting on FPGA. Highly paralleled and fully pipelined processing elements are specially designed via FPGA and integrated with the embedded ARM as a heterogeneous system to improve the throughput and reduce the memory footprint. Meanwhile, the EMVS algorithm is reformulated to a more hardware-friendly manner by rescheduling, approximate computing and hybrid data quantization. Evaluation results on DAVIS dataset show that Eventor achieves up to $24\times$ improvement in energy efficiency compared with Intel i5 CPU platform.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Field-free spin orbit torque switching of synthetic antiferromagnet through interlayer Dzyaloshinskii-Moriya interaction

Perpendicular synthetic antiferromagnets (SAFs) are of interest for the next generation ultrafast, high density spintronic memory and logic devices. However, to energy efficiently operate their magnetic order by current-induced spin orbit torques (SOTs), an unfavored high external field is conventionally required to break the symmetry. Here, we theoretically and experimentally demonstrate the field-free SOT switching of a perpendicular SAF through the introduction of interlayer Dzyaloshinskii-Moriya interaction (DMI). By macro-spin simulation, we show that the speed of field-free switching increases with the in-plane mirror asymmetry of injected spins. We experimentally observe the existence of interlayer DMI in our SAF sample by an azimuthal angular dependent anomalous Hall measurement. Field-free switching is accomplished in such a sample and the strength of the effective switching field demonstrates its origin from interlayer DMI. Our results provide a new strategy for SAF based high performance SOT devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Impact of Spin-Orbit Coupling on Quantum Transport in Magnetic Tunnel Junction with an anti-ferromagnetic Capping Layer

Using first-principles calculations, we explore the role of an anti-ferromagnetic heavy-metal, L1$_0$-IrMn, as a capping layer in a perpendicular magnetic tunnel junction (\emph{p}-MTJ). A comparative study is conducted by employing conventional non-magnetic heavy-metals (Ta, W or Mo) capping layers along with an anti-ferromagnetic IrMn in a symmetric-MTJ X/FeCo/MgO/FeCo/X, where X=Ta, W, Mo or IrMn. Firstly, the calculations without including spin-orbit coupling (SOC) are presented where the highest TMR is achieved in IrMn-IrMn MTJ compared to that of Ta-Ta, W-W and Mo-Mo MTJs. The origin of this large TMR is attributed to, both, the large spin-polarization due to reduced lattice-mismatch and the non-identical signatures of both the anti-parallel conduction-channels caused by the anti-ferromagnetic ordering of IrMn that reflects the spins at IrMn/FeCo interface. Moreover, when SOC is switched-on, the increase of TMR is observed in all the MTJs with a particularly giant enhancement in IrMn-IrMn MTJ. This SOC-induced increase in TMR is ascribed to the mixed contribution of $Δ_1$ and $Δ_5$ states and the additional increase in the band levels of the out-of-plane orbitals, \emph{p}$_z$, \emph{d}$_{z}^2$ and \emph{d}$_{xz}$ due to the lifting of degeneracy. Furthermore, it was also observed that the lattice-mismatch-induced strain might create an orbital reconstruction within the capping layer, probably, due to the crystallographic deformation and, in turn, in the adjacent FeCo-electrode. This microscopic mechanism also plays an additional decisive role in enhancing the TMR. Finally, our results indicate that IrMn can offer giant TMR in future spin-orbit toque (SOT) based MRAM devices with a straightforward design strategy.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

NAND-SPIN-Based Processing-in-MRAM Architecture for Convolutional Neural Network Acceleration

The performance and efficiency of running large-scale datasets on traditional computing systems exhibit critical bottlenecks due to the existing "power wall" and "memory wall" problems. To resolve those problems, processing-in-memory (PIM) architectures are developed to bring computation logic in or near memory to alleviate the bandwidth limitations during data transmission. NAND-like spintronics memory (NAND-SPIN) is one kind of promising magnetoresistive random-access memory (MRAM) with low write energy and high integration density, and it can be employed to perform efficient in-memory computation operations. In this work, we propose a NAND-SPIN-based PIM architecture for efficient convolutional neural network (CNN) acceleration. A straightforward data mapping scheme is exploited to improve the parallelism while reducing data movements. Benefiting from the excellent characteristics of NAND-SPIN and in-memory processing architecture, experimental results show that the proposed approach can achieve $\sim$2.6$\times$ speedup and $\sim$1.4$\times$ improvement in energy efficiency over state-of-the-art PIM solutions.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Spin Manipulation by Giant Valley-Zeeman Spin-Orbit Field in Atom-Thick WSe2

The phenomenon originating from spin-orbit coupling (SOC) provides energy-efficient strategies for spin manipulation and device applications. The broken inversion symmetry interface and resulting electric field induce a Rashba-type spin-orbit field (SOF), which has been demonstrated to generate spin-orbit torque for data storage applications. In this study, we found that spin flipping can be achieved by the valley-Zeeman SOF in monolayer WSe2 at room temperature, which manifests as a negative magnetoresistance in the vertical spin valve. Quantum transmission calculations based on an effective model near the K valley of WSe2 confirm the precessional spin transport of carriers under the giant SOF, which is estimated to be 650 T. In particular, the valley-Zeeman SOF-induced spin dynamics was demonstrated to be tunable with the layer number and stacking phase of WSe2 as well as the gate voltage, which provides a novel strategy for spin manipulation and can benefit the development of ultralow-power spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

The Existence of Graph whose Vertex Set Can be Partitioned into a Fixed Number of Domination Strong Critical Vertex-sets

Let $γ(G)$ denote the domination number of a graph $G$. A vertex $v\in V(G)$ is called a \emph{critical vertex} of $G$ if $γ(G-v)=γ(G)-1$. A graph is called \emph{vertex-critical} if every vertex of it is critical. In this paper, we correspondingly introduce two such definitions: (i) a set $S\subseteq V(G)$ is called a \emph{strong critical vertex-set} of $G$ if $γ(G-S)=γ(G)-|S|$; (ii) a graph $G$ is called \emph{strong $l$-vertex-sets-critical} if $V(G)$ can be partitioned into $l$ strong critical vertex-sets of $G$. Whereafter, we give some properties of strong $l$-vertex-sets-critical graphs by extending the previous results of vertex-critical graphs. As the core work, we study on the existence of this class of graphs and obtain that there exists a strong $l$-vertex-sets-critical connected graph if and only if $l\notin\{2,3,5\}$.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Towards Systems Education for Artificial Intelligence: A Course Practice in Intelligent Computing Architectures

With the rapid development of artificial intelligence (AI) community, education in AI is receiving more and more attentions. There have been many AI related courses in the respects of algorithms and applications, while not many courses in system level are seriously taken into considerations. In order to bridge the gap between AI and computing systems, we are trying to explore how to conduct AI education from the perspective of computing systems. In this paper, a course practice in intelligent computing architectures are provided to demonstrate the system education in AI era. The motivation for this course practice is first introduced as well as the learning orientations. The main goal of this course aims to teach students for designing AI accelerators on FPGA platforms. The elaborated course contents include lecture notes and related technical materials. Especially several practical labs and projects are detailed illustrated. Finally, some teaching experiences and effects are discussed as well as some potential improvements in the future.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Forecasting the outcome of spintronic experiments with Neural Ordinary Differential Equations

Deep learning has an increasing impact to assist research, allowing, for example, the discovery of novel materials. Until now, however, these artificial intelligence techniques have fallen short of discovering the full differential equation of an experimental physical system. Here we show that a dynamical neural network, trained on a minimal amount of data, can predict the behavior of spintronic devices with high accuracy and an extremely efficient simulation time, compared to the micromagnetic simulations that are usually employed to model them. For this purpose, we re-frame the formalism of Neural Ordinary Differential Equations (ODEs) to the constraints of spintronics: few measured outputs, multiple inputs and internal parameters. We demonstrate with Spin-Neural ODEs an acceleration factor over 200 compared to micromagnetic simulations for a complex problem -- the simulation of a reservoir computer made of magnetic skyrmions (20 minutes compared to three days). In a second realization, we show that we can predict the noisy response of experimental spintronic nano-oscillators to varying inputs after training Spin-Neural ODEs on five milliseconds of their measured response to different excitations. Spin-Neural ODE is a disruptive tool for developing spintronic applications in complement to micromagnetic simulations, which are time-consuming and cannot fit experiments when noise or imperfections are present. Spin-Neural ODE can also be generalized to other electronic devices involving dynamics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

All-optical switching of magnetic domains in Co/Gd heterostructures with Dzyaloshinskii-Moriya Interaction

Given the development of hybrid spintronic-photonic devices and chiral magnetic structures, a combined interest in all-optical switching (AOS) of magnetization and current-induced domain wall motion in synthetic ferrimagnetic structures with strong Dzyaloshinskii-Moriya Interaction (DMI) is emerging. In this study, we report a study on single-pulse all-optical toggle switching and asymmetric bubble expansion in specially engineered Co/Gd-based multilayer structures. In the absence of any external magnetic fields, we look into the AOS properties and the potential role of the DMI on the AOS process as well as the stability of optically written micro-magnetic domains. Particularly, interesting dynamics are observed in moon-shaped structures written by two successive laser pulses. The stability of domains resulting from an interplay of the dipolar interaction and domain-wall energy are compared to simple analytical models and micromagnetic simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Efficient Computation Reduction in Bayesian Neural Networks Through Feature Decomposition and Memorization

Bayesian method is capable of capturing real world uncertainties/incompleteness and properly addressing the over-fitting issue faced by deep neural networks. In recent years, Bayesian Neural Networks (BNNs) have drawn tremendous attentions of AI researchers and proved to be successful in many applications. However, the required high computation complexity makes BNNs difficult to be deployed in computing systems with limited power budget. In this paper, an efficient BNN inference flow is proposed to reduce the computation cost then is evaluated by means of both software and hardware implementations. A feature decomposition and memorization (\texttt{DM}) strategy is utilized to reform the BNN inference flow in a reduced manner. About half of the computations could be eliminated compared to the traditional approach that has been proved by theoretical analysis and software validations. Subsequently, in order to resolve the hardware resource limitations, a memory-friendly computing framework is further deployed to reduce the memory overhead introduced by \texttt{DM} strategy. Finally, we implement our approach in Verilog and synthesise it with 45 $nm$ FreePDK technology. Hardware simulation results on multi-layer BNNs demonstrate that, when compared with the traditional BNN inference method, it provides an energy consumption reduction of 73\% and a 4$\times$ speedup at the expense of 14\% area overhead.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Erase-hidden and Drivability-improved Magnetic Non-Volatile Flip-Flops with NAND-SPIN Devices

Non-volatile flip-flops (NVFFs) using power gating techniques promise to overcome the soaring leakage power consumption issue with the scaling of CMOS technology. Magnetic tunnel junction (MTJ) is a good candidate for constructing the NVFF thanks to its low power, high speed, good CMOS compatibility, etc. In this paper, we propose a novel magnetic NVFF based on an emerging memory device called NAND-SPIN. The data writing of NAND-SPIN is achieved by successively applying two unidirectional currents, which respectively generate the spin orbit torque (SOT) and spin transfer torque (STT) for erase and programming operations. This characteristic allows us to design an erase-hidden and drivability-improved magnetic NVFF. Furthermore, more design flexibility could be obtained since the backup operation of the proposed NVFF is not limited by the inherent slave latch. Simulation results show that our proposed NVFF achieves performance improvement in terms of power, delay and area, compared with conventional slave-latch-driven SOT-NVFF designs.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Field-free Deterministic Magnetization Switching Induced by Interlaced Spin-Orbit Torques

Spin-orbit torque (SOT) based magnetic random access memory (MRAM) is envisioned as an emerging non-volatile memory due to its ultra-high speed and low power consumption. The field-free switching schema in SOT devices is of great interest to both academia and industry. Here we propose a novel field-free deterministic magnetization switching in a regular magnetic tunnel junction (MTJ) by using two currents sequentially passing interlaced paths, with less requirements of manufacturing process or additional physical effects. The switching is bipolar since the final magnetization state depends on the combination of current paths. The functionality and robustness of the proposed schema is validated through both macrospin and micromagnetic simulation. The influences of field-like torque and Dzyaloshinskii-Moriya interaction (DMI) effect are further researched. Our proposed schema shows good scalability and is expected to realize novel digital logic and even computing-in-memory platform.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Generation and manipulation of chiral terahertz waves emitted from the three-dimensional topological insulator Bi2Te3

Arbitrary manipulation of broadband terahertz waves with flexible polarization shaping at the source has great potential in expanding real applications such as imaging, information encryption, and all-optically coherent control of terahertz nonlinear phenomena. Topological insulators featuring unique spin-momentum locked surface state have already exhibited very promising prospects in terahertz emission, detection and modulation, which may lay a foundation for future on-chip topological insulator-based terahertz systems. However, polarization shaped terahertz emission with prescribed manners of arbitrarily manipulated temporal evolution of the amplitude and electric-field vector direction based on topological insulators have not yet been explored. Here we systematically investigated the terahertz radiation from topological insulator Bi2Te3 nanofilms driven by femtosecond laser pulses, and successfully realized the generation of efficient chiral terahertz waves with controllable chirality, ellipticity, and principle axis. The convenient engineering of the chiral terahertz waves was interpreted by photogalvanic effect induced photocurrent, while the linearly polarized terahertz waves originated from linear photogalvanic effect induced shift currents. We believe our works not only help further understanding femtosecond coherent control of ultrafast spin currents in light-matter interaction but also provide an effective way to generate spin-polarized terahertz waves and accelerate the proliferation of twisting the terahertz waves at the source.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Hardware Security in Spin-Based Computing-In-Memory: Analysis, Exploits, and Mitigation Techniques

Computing-in-memory (CIM) is proposed to alleviate the processor-memory data transfer bottleneck in traditional Von-Neumann architectures, and spintronics-based magnetic memory has demonstrated many facilitation in implementing CIM paradigm. Since hardware security has become one of the major concerns in circuit designs, this paper, for the first time, investigates spin-based computing-in-memory (SpinCIM) from a security perspective. We focus on two fundamental questions: 1) how the new SpinCIM computing paradigm can be exploited to enhance hardware security? 2) what security concerns has this new SpinCIM computing paradigm incurred?

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Modulation of field-like spin orbit torque in heavy metal / ferromagnet heterostructure

Recent studies rediscovered the crucial role of field-like spin orbit torque (SOT) in nanosecond-timescale SOT dynamics. However, there is not yet an effective way to control its relative amplitude. Here, we experimentally modulate the field-like SOT in W/CoFeB/MgO trilayers through tuning the interfacial spin accumulation. By performing spin Hall magnetoresistance measurement, we find that the CoFeB with enhanced spin dephasing, either generated from larger layer thickness or from proper annealing, can distinctly boost the spin absorption and enhance the interfacial spin mixing conductance G_r. While the damping-like torque efficiency increases with G_r, the field-like torque efficiency turns out to decrease with it. The results suggest that the interfacial spin accumulation, which largely contributes to a field-like torque, is reduced by higher interfacial spin transparency. Our work shows a new path to further improve the performance of SOT-based magnetic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

SparseTrain: Exploiting Dataflow Sparsity for Efficient Convolutional Neural Networks Training

Training Convolutional Neural Networks (CNNs) usually requires a large number of computational resources. In this paper, \textit{SparseTrain} is proposed to accelerate CNN training by fully exploiting the sparsity. It mainly involves three levels of innovations: activation gradients pruning algorithm, sparse training dataflow, and accelerator architecture. By applying a stochastic pruning algorithm on each layer, the sparsity of back-propagation gradients can be increased dramatically without degrading training accuracy and convergence rate. Moreover, to utilize both \textit{natural sparsity} (resulted from ReLU or Pooling layers) and \textit{artificial sparsity} (brought by pruning algorithm), a sparse-aware architecture is proposed for training acceleration. This architecture supports forward and back-propagation of CNN by adopting 1-Dimensional convolution dataflow. We have built %a simple compiler to map CNNs topology onto \textit{SparseTrain}, and a cycle-accurate architecture simulator to evaluate the performance and efficiency based on the synthesized design with $14nm$ FinFET technologies. Evaluation results on AlexNet/ResNet show that \textit{SparseTrain} could achieve about $2.7 \times$ speedup and $2.2 \times$ energy efficiency improvement on average compared with the original training process.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Stochastic Computing Implemented by Skyrmionic Logic Devices

Magnetic skyrmion, topologically non-trivial spin texture, has been considered as promising information carrier in future electronic devices because of its nanoscale size, low depinning current density and high motion velocity. Despite the broad interests in skyrmion racetrack memory, researchers have been recently exploiting logic functions enabled by using the particle-like behaviors of skyrmions. These functions can be applied to unconventional computing, such as stochastic computing (SC), which treats data as probabilities and is superior to binary computing due to its simplicity of logic operation. In this work, we demonstrate SC implemented by skyrmionic logic devices. We propose a skyrmionic AND-OR logic device as a multiplier in the stochastic domain and two skyrmionic multiplexer (MUX) logic devices as stochastic adders. With the assist of voltage controlled magnetic anisotropy (VCMA), the precise control of skyrmions collision is not required in the skyrmionic AND-OR logic device, thus improving the operation robustness. In the two MUX logic devices, skyrmions can be driven by Zhang-Li torque or spin orbit torque (SOT). Particularly, we can flexibly regulate the skyrmion motion by VCMA or voltage controlled Dzyaloshinskii-Moriya Interaction (VCDMI) in the SOT case. Furthermore, 3-bit stochastic multiplier and adder are demonstrated by micromagnetic simulations. In addition, simulations in synthetic antiferromagnets (SAF) show that the performance of our skyrmionic logic gates can be optimized through advanced materials. Our work opens up perspective to implement SC using skyrmionic logic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

TCIM: Triangle Counting Acceleration With Processing-In-MRAM Architecture

Triangle counting (TC) is a fundamental problem in graph analysis and has found numerous applications, which motivates many TC acceleration solutions in the traditional computing platforms like GPU and FPGA. However, these approaches suffer from the bandwidth bottleneck because TC calculation involves a large amount of data transfers. In this paper, we propose to overcome this challenge by designing a TC accelerator utilizing the emerging processing-in-MRAM (PIM) architecture. The true innovation behind our approach is a novel method to perform TC with bitwise logic operations (such as \texttt{AND}), instead of the traditional approaches such as matrix computations. This enables the efficient in-memory implementations of TC computation, which we demonstrate in this paper with computational Spin-Transfer Torque Magnetic RAM (STT-MRAM) arrays. Furthermore, we develop customized graph slicing and mapping techniques to speed up the computation and reduce the energy consumption. We use a device-to-architecture co-simulation framework to validate our proposed TC accelerator. The results show that our data mapping strategy could reduce $99.99\%$ of the computation and $72\%$ of the memory \texttt{WRITE} operations. Compared with the existing GPU or FPGA accelerators, our in-memory accelerator achieves speedups of $9\times$ and $23.4\times$, respectively, and a $20.6\times$ energy efficiency improvement over the FPGA accelerator.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Theoretical Conditions for Field-free Magnetization Switching Induced by Spin-orbit Torque and Dzyaloshinskii-Moriya Interaction

Recently, it was demonstrated that field-free switching could be achieved by combining spin-orbit torque (SOT) and Dzyaloshinskii-Moriya interaction (DMI). However, this mechanism only occurs under certain conditions which have not been well discussed. In this letter, it is found that the ratio of domain wall width to diameter of nanodots could be utilized as a criteria for judging this mechanism. Influences of different magnetic parameters are studied, including exchange constant, DMI magnitude and field-like toque, etc. Besides, we reveal the importance of the shrinkage of magnetic domain wall surface energy for metastable states. Our work provides guidelines to the experiments on the DMI-induced field-free magnetization switching, and also offers a new way for the design of SOT-based memory or logic circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Enhanced Interfacial Dzyaloshinskii-Moriya Interaction in annealed Pt/Co/MgO structures

The interfacial Dzyaloshinskii-Moriya interaction (iDMI) is attracting great interests for spintronics. An iDMI constant larger than 3 mJ/m^2 is expected to minimize the size of skyrmions and to optimize the DW dynamics. In this study, we experimentally demonstrate an enhanced iDMI in Pt/Co/X/MgO ultra-thin film structures with perpendicular magnetization. The iDMI constants were measured using a field-driven creep regime domain expansion method. The enhancement of iDMI with an atomically thin insertion of Ta and Mg is comprehensively understood with the help of ab-initio calculations. Thermal annealing has been used to crystallize the MgO thin layer for improving tunneling magneto-resistance (TMR), but interestingly it also provides a further increase of the iDMI constant. An increase of the iDMI constant up to 3.3 mJ/m^2 is shown, which could be promising for the scaling down of skyrmion electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Magnetic skyrmion artificial synapse for neuromorphic computing

Since the experimental discovery of magnetic skyrmions achieved one decade ago, there have been significant efforts to bring the virtual particles into all-electrical fully functional devices, inspired by their fascinating physical and topological properties suitable for future low-power electronics. Here, we experimentally demonstrate such a device: electrically-operating skyrmion-based artificial synaptic device designed for neuromorphic computing. We present that controlled current-induced creation, motion, detection and deletion of skyrmions in ferrimagnetic multilayers can be harnessed in a single device at room temperature to imitate the behaviors of biological synapses. Using simulations, we demonstrate that such skyrmion-based synapses could be used to perform neuromorphic pattern-recognition computing using handwritten recognition data set, reaching to the accuracy of ~89 percents, comparable to the software-based training accuracy of ~94 percents. Chip-level simulation then highlights the potential of skyrmion synapse compared to existing technologies. Our findings experimentally illustrate the basic concepts of skyrmion-based fully functional electronic devices while providing a new building block in the emerging field of spintronics-based bio-inspired computing.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Phase-Change Control of Interlayer Exchange Coupling

Changing the interlayer exchange coupling between magnetic layers in-situ is a key issue of spintronics, as it allows for the optimization of properties that are desirable for applications, including magnetic sensing and memory. In this paper, we utilize the phase change material VO2 as a spacer layer to regulate the interlayer exchange coupling between ferromagnetic layers with perpendicular magnetic anisotropy. The successful growth of ultra-thin (several nanometres) VO2 films is realized by sputtering at room temperature, which further enables the fabrication of [Pt/Co]2/VO2/[Co/Pt]2 multilayers with distinct interfaces. Such a magnetic multilayer exhibits an evolution from antiferromagnetic coupling to ferromagnetic coupling as the VO2 undergoes a phase change. The underlying mechanism originates from the change in the electronic structure of the spacer layer from an insulating to a metallic state. As a demonstration of phase change spintronics, this work may reveal the great potential of material innovations for next-generation spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Skyrmion-electronics: Writing, deleting, reading and processing magnetic skyrmions toward spintronic applications

The field of magnetic skyrmions has been actively investigated across a wide range of topics during the last decades. In this topical review, we mainly review and discuss key results and findings in skyrmion research since the first experimental observation of magnetic skyrmions in 2009. We particularly focus on the theoretical, computational and experimental findings and advances that are directly relevant to the spintronic applications based on magnetic skyrmions, i.e. their writing, deleting, reading and processing driven by magnetic field, electric current and thermal energy. We then review several potential applications including information storage, logic computing gates and non-conventional devices such as neuromorphic computing devices. Finally, we discuss possible future research directions on magnetic skyrmions, which also cover rich topics on other topological textures such as antiskyrmions and bimerons in antiferromagnets and frustrated magnets.

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preprint2019arXiv

Thermal Brownian Motion of Skyrmion for True Random Number Generation

The true random number generators (TRNGs) have received extensive attention because of their wide applications in information transmission and encryption. The true random numbers generated by TRNG are typically applied to the encryption algorithm or security protocol of the information security core. Recently, TRNGs have also been employed in emerging stochastic computing paradigm for reducing power consumption. Roughly speaking, TRNG can be divided into circuits-based, e.g., oscillator sampling or directly noise amplifying; and quantum physics-based, e.g., photoelectric effect. The former generally requires a large area and has a large power consumption, whereas the latter is intrinsic random but is more difficult to implement and usually requires additional post-processing circuitry. Very recently, magnetic skyrmion has become a promising candidate for implementing TRNG because of their nanometer size, high stability, and intrinsic thermal Brownian motion dynamics. In this work, we propose a TRNG based on continuous skyrmion thermal Brownian motion in a confined geometry at room temperature. True random bitstream can be easily obtained by periodically detecting the relative position of the skyrmion without the need for additional current pulses. More importantly, we implement a probability-adjustable TRNG, in which a desired ratio of 0 and 1 can be acquired by adding an anisotropy gradient through voltage-controlled magnetic anisotropy (VCMA) effect. The behaviors of the skyrmion-based TRNG are verified by using micromagnetic simulations. The National Institute of Standards and Technology (NIST) test results demonstrate that our proposed random number generator is TRNG with good randomness. Our research provides a new perspective for efficient TRNG realization.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Universal transfer and stacking technique of van der Waals heterostructures for spintronics

The key to achieving high-quality van der Waals heterostructure devices made from various two-dimensional (2D) materials lies in the control over clean and flexible interfaces. However, existing transfer methods based on different mediators possess insufficiencies including the presence of residues, the unavailability of flexible interface engineering, and the selectivity towards materials and substrates since their adhesions differ considerably with the various preparation conditions, from chemical vapor deposition (CVD) growth to mechanical exfoliation. In this paper, we introduce a more universal method using a prefabricated polyvinyl alcohol (PVA) film to transfer and stack 2D materials, whether they are prepared by CVD or exfoliation. This peel-off and drop-off technique promises an ideal interface of the materials without introducing contamination. In addition, the method exhibits a micron-scale spatial transfer accuracy and meets special experimental conditions such as the preparation of twisted graphene and the 2D/metal heterostructure construction. We illustrate the superiority of this method with a WSe2 vertical spin valve device, whose performance verifies the applicability and advantages of such a method for spintronics. Our PVA-assisted transfer process will promote the development of high-performance 2D-material-based devices.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Optical control of magnetism in NiFe/VO2 heterostructures

Optical methods for magnetism manipulation have been considered as a promising strategy for ultralow-power and ultrahigh-speed spin switches, which becomes a hot spot in the field of spintronics. However, a widely applicable and efficient method to combine optical operation with magnetic modulation is still highly desired. Here, the strongly correlated electron material VO2 is introduced to realize phase-transition based optical control of the magnetism in NiFe. The NiFe/VO2 bilayer heterostructure features appreciable modulations in electrical conductivity (55%), coercivity (60%), and magnetic anisotropy (33.5%). Further analyses indicate that interfacial strain coupling plays a crucial role in this modulation. Utilizing this optically controlled magnetism modulation feature, programmable Boolean logic gates (AND, OR, NAND, NOR, XOR, NXOR and NOT) for high-speed and low-power data processing are demonstrated based on this engineered heterostructure. As a demonstration of phase-transition spintronics, this work may pave the way for next-generation electronics in the post-Moore era.

0 citations0 reviewsNo code linkedOpen access