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Youguang Zhang

Youguang Zhang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallInformation Theorymath.ITphysics.app-phcond-mat.mtrl-sciEmerging TechnologiesHardware Architecturephysics.comp-ph

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Published work

11 published item(s)

preprint2023arXiv

Kagomerization of transition metal monolayers induced by two-dimensional hexagonal boron nitride

The kagome lattice is an exciting solid state physics platform for the emergence of nontrivial quantum states driven by electronic correlations: topological effects, unconventional superconductivity, charge and spin density waves, and unusual magnetic states such as quantum spin liquids. While kagome lattices have been realized in complex multi-atomic bulk compounds, here we demonstrate from first-principles a process that we dub kagomerization, in which we fabricate a two-dimensional kagome lattice in monolayers of transition metals utilizing a hexagonal boron nitride (h-BN) overlayer. Surprisingly, h-BN induces a large rearrangement of the transition metal atoms supported on a fcc(111) heavy-metal surface. This reconstruction is found to be rather generic for this type of heterostructures and has a profound impact on the underlying magnetic properties, ultimately stabilizing various topological magnetic solitons such as skyrmions and bimerons. Our findings call for a reconsideration of h-BN as merely a passive capping layer, showing its potential for not only reconstructing the atomic structure of the underlying material, e.g. through the kagomerization of magnetic films, but also enabling electronic and magnetic phases that are highly sought for the next generation of device technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

NAND-SPIN-Based Processing-in-MRAM Architecture for Convolutional Neural Network Acceleration

The performance and efficiency of running large-scale datasets on traditional computing systems exhibit critical bottlenecks due to the existing "power wall" and "memory wall" problems. To resolve those problems, processing-in-memory (PIM) architectures are developed to bring computation logic in or near memory to alleviate the bandwidth limitations during data transmission. NAND-like spintronics memory (NAND-SPIN) is one kind of promising magnetoresistive random-access memory (MRAM) with low write energy and high integration density, and it can be employed to perform efficient in-memory computation operations. In this work, we propose a NAND-SPIN-based PIM architecture for efficient convolutional neural network (CNN) acceleration. A straightforward data mapping scheme is exploited to improve the parallelism while reducing data movements. Benefiting from the excellent characteristics of NAND-SPIN and in-memory processing architecture, experimental results show that the proposed approach can achieve $\sim$2.6$\times$ speedup and $\sim$1.4$\times$ improvement in energy efficiency over state-of-the-art PIM solutions.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Stochastic Computing Implemented by Skyrmionic Logic Devices

Magnetic skyrmion, topologically non-trivial spin texture, has been considered as promising information carrier in future electronic devices because of its nanoscale size, low depinning current density and high motion velocity. Despite the broad interests in skyrmion racetrack memory, researchers have been recently exploiting logic functions enabled by using the particle-like behaviors of skyrmions. These functions can be applied to unconventional computing, such as stochastic computing (SC), which treats data as probabilities and is superior to binary computing due to its simplicity of logic operation. In this work, we demonstrate SC implemented by skyrmionic logic devices. We propose a skyrmionic AND-OR logic device as a multiplier in the stochastic domain and two skyrmionic multiplexer (MUX) logic devices as stochastic adders. With the assist of voltage controlled magnetic anisotropy (VCMA), the precise control of skyrmions collision is not required in the skyrmionic AND-OR logic device, thus improving the operation robustness. In the two MUX logic devices, skyrmions can be driven by Zhang-Li torque or spin orbit torque (SOT). Particularly, we can flexibly regulate the skyrmion motion by VCMA or voltage controlled Dzyaloshinskii-Moriya Interaction (VCDMI) in the SOT case. Furthermore, 3-bit stochastic multiplier and adder are demonstrated by micromagnetic simulations. In addition, simulations in synthetic antiferromagnets (SAF) show that the performance of our skyrmionic logic gates can be optimized through advanced materials. Our work opens up perspective to implement SC using skyrmionic logic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Thermal Brownian Motion of Skyrmion for True Random Number Generation

The true random number generators (TRNGs) have received extensive attention because of their wide applications in information transmission and encryption. The true random numbers generated by TRNG are typically applied to the encryption algorithm or security protocol of the information security core. Recently, TRNGs have also been employed in emerging stochastic computing paradigm for reducing power consumption. Roughly speaking, TRNG can be divided into circuits-based, e.g., oscillator sampling or directly noise amplifying; and quantum physics-based, e.g., photoelectric effect. The former generally requires a large area and has a large power consumption, whereas the latter is intrinsic random but is more difficult to implement and usually requires additional post-processing circuitry. Very recently, magnetic skyrmion has become a promising candidate for implementing TRNG because of their nanometer size, high stability, and intrinsic thermal Brownian motion dynamics. In this work, we propose a TRNG based on continuous skyrmion thermal Brownian motion in a confined geometry at room temperature. True random bitstream can be easily obtained by periodically detecting the relative position of the skyrmion without the need for additional current pulses. More importantly, we implement a probability-adjustable TRNG, in which a desired ratio of 0 and 1 can be acquired by adding an anisotropy gradient through voltage-controlled magnetic anisotropy (VCMA) effect. The behaviors of the skyrmion-based TRNG are verified by using micromagnetic simulations. The National Institute of Standards and Technology (NIST) test results demonstrate that our proposed random number generator is TRNG with good randomness. Our research provides a new perspective for efficient TRNG realization.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Universal transfer and stacking technique of van der Waals heterostructures for spintronics

The key to achieving high-quality van der Waals heterostructure devices made from various two-dimensional (2D) materials lies in the control over clean and flexible interfaces. However, existing transfer methods based on different mediators possess insufficiencies including the presence of residues, the unavailability of flexible interface engineering, and the selectivity towards materials and substrates since their adhesions differ considerably with the various preparation conditions, from chemical vapor deposition (CVD) growth to mechanical exfoliation. In this paper, we introduce a more universal method using a prefabricated polyvinyl alcohol (PVA) film to transfer and stack 2D materials, whether they are prepared by CVD or exfoliation. This peel-off and drop-off technique promises an ideal interface of the materials without introducing contamination. In addition, the method exhibits a micron-scale spatial transfer accuracy and meets special experimental conditions such as the preparation of twisted graphene and the 2D/metal heterostructure construction. We illustrate the superiority of this method with a WSe2 vertical spin valve device, whose performance verifies the applicability and advantages of such a method for spintronics. Our PVA-assisted transfer process will promote the development of high-performance 2D-material-based devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Amplicification of Voltage Controlled Magnetic Anisotropy Effect with Negative Capacitance

The high current density required by Magnetic Tunneling Junction (MTJ) switching driven by Spin Transfer Torque (STT) effect leads to large power consumption and severe reliability issues therefore hinder the timetable for STT Magnetic Random Access Memory (STT-MRAM) to mass market. By utilizing Voltage Controlled Magnetic Anisotropy (VCMA) effect, the MTJ can be switched by voltage effect and is postulated to achieve ultra-low power (fJ). However, the VCMA coefficient measured in experiments is far too small for MTJ dimension below 100 nm. Here in this work, a novel approach for the amplification of VCMA effect which borrow ideas from negative capacitance is proposed. The feasibility of the proposal is proved by physical simulation and in-depth analysis.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions

It has been reported in experiments that capping layers which enhance the perpendicular magnetic anisotropy (PMA) of magnetic tunnel junctions (MTJs) induce great impact on the tunnel magnetoresistance (TMR). To explore the essential influence caused by capping layers, we carry out ab initio calculations on TMR in the X(001)|CoFe(001)|MgO(001)|CoFe(001)|X(001) MTJ, where X represents the capping layer material which can be tungsten, tantalum or hafnium. We report TMR in different MTJs and demonstrate that tungsten is an ideal candidate for a giant TMR ratio. The transmission spectrum in Brillouin zone is presented. It can be seen that in the parallel condition of MTJ, sharp transmission peaks appear in the minority-spin channel. This phenomenon is attributed to the resonant tunnel transmission effect and we explained it by the layer-resolved density of states (DOS). In order to explore transport properties in MTJs, the density of scattering states (DOSS) was studied from the point of band symmetry. It has been found that CoFe|tungsten interface blocks scattering states transmission in the anti-parallel condition. This work reports TMR and transport properties in MTJs with different capping layers, and proves that tungsten is a proper capping layer material, which would benefit the design and optimization of MTJs.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Current-limiting challenges for all-spin logic devices

All-spin logic device (ASLD) has attracted increasing interests as one of the most promising post-CMOS device candidates, thanks to its low power, non-volatility and logic-in-memory structure. Here we investigate the key current-limiting factors and develop a physics-based model of ASLD through nano-magnet switching, the spin transport properties and the breakdown characteristic of channel. First, ASLD with perpendicular magnetic anisotropy (PMA) nano-magnet is proposed to reduce the critical current (Ic0). Most important, the spin transport efficiency can be enhanced by analyzing the device structure, dimension, contact resistance as well as material parameters. Furthermore, breakdown current density (JBR) of spin channel is studied for the upper current limitation. As a result, we can deduce current-limiting conditions and estimate energy dissipation. Based on the model, we demonstrate ASLD with different structures and channel materials (graphene and copper). Asymmetric structure is found to be the optimal option for current limitations. Copper channel outperforms graphene in term of energy but seriously suffers from breakdown current limit. By exploring the current limit and performance tradeoffs, the optimization of ASLD is also discussed. This benchmarking model of ASLD opens up new prospects for design and implementation of future spintronics applications.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Fast Adaptive S-ALOHA Scheme for Event-driven M2M Communications (Journal version)

Supporting massive device transmission is challenging in Machine-to-Machine (M2M) communications. Particularly, in event-driven M2M communications, a large number of devices activate within a short period of time, which in turn causes high radio congestions and severe access delay. To address this issue, we propose a Fast Adaptive S-ALOHA (FASA) scheme for random access control of M2M communication systems with bursty traffic. Instead of the observation in a single slot, the statistics of consecutive idle and collision slots are used in FASA to accelerate the tracking process of network status which is critical for optimizing S-ALOHA systems. Using drift analysis, we design the FASA scheme such that the estimate of the backlogged devices converges fast to the true value. Furthermore, by examining the $T$-slot drifts, we prove that the proposed FASA scheme is stable as long as the average arrival rate is smaller than $e^{-1}$, in the sense that the Markov Chain derived from the scheme is geometrically ergodic. Simulation results demonstrate that the proposed FASA scheme outperforms traditional additive schemes such as PB-ALOHA and achieves near-optimal performance in reducing access delay. Moreover, compared to multiplicative schemes, FASA shows its robustness under heavy traffic load in addition to better delay performance.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Fast Adaptive S-ALOHA Scheme for Event-driven Machine-to-Machine Communications

Machine-to-Machine (M2M) communication is now playing a market-changing role in a wide range of business world. However, in event-driven M2M communications, a large number of devices activate within a short period of time, which in turn causes high radio congestions and severe access delay. To address this issue, we propose a Fast Adaptive S-ALOHA (FASA) scheme for M2M communication systems with bursty traffic. The statistics of consecutive idle and collision slots, rather than the observation in a single slot, are used in FASA to accelerate the tracking process of network status. Furthermore, the fast convergence property of FASA is guaranteed by using drift analysis. Simulation results demonstrate that the proposed FASA scheme achieves near-optimal performance in reducing access delay, which outperforms that of traditional additive schemes such as PB-ALOHA. Moreover, compared to multiplicative schemes, FASA shows its robustness even under heavy traffic load in addition to better delay performance.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Laxity-Based Opportunistic Scheduling with Flow-Level Dynamics and Deadlines

Many data applications in the next generation cellular networks, such as content precaching and video progressive downloading, require flow-level quality of service (QoS) guarantees. One such requirement is deadline, where the transmission task needs to be completed before the application-specific time. To minimize the number of uncompleted transmission tasks, we study laxity-based scheduling policies in this paper. We propose a Less-Laxity-Higher-Possible-Rate (L$^2$HPR) policy and prove its asymptotic optimality in underloaded identical-deadline systems. The asymptotic optimality of L$^2$HPR can be applied to estimate the schedulability of a system and provide insights on the design of scheduling policies for general systems. Based on it, we propose a framework and three heuristic policies for practical systems. Simulation results demonstrate the asymptotic optimality of L$^2$HPR and performance improvement of proposed policies over greedy policies.

0 citations0 reviewsNo code linkedOpen access