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Researcher profile

Youguang Zhang

Youguang Zhang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.app-phcond-mat.mes-hallcond-mat.mtrl-sciEmerging TechnologiesHardware Architecture

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Published work

5 published item(s)

preprint2023arXiv

Kagomerization of transition metal monolayers induced by two-dimensional hexagonal boron nitride

The kagome lattice is an exciting solid state physics platform for the emergence of nontrivial quantum states driven by electronic correlations: topological effects, unconventional superconductivity, charge and spin density waves, and unusual magnetic states such as quantum spin liquids. While kagome lattices have been realized in complex multi-atomic bulk compounds, here we demonstrate from first-principles a process that we dub kagomerization, in which we fabricate a two-dimensional kagome lattice in monolayers of transition metals utilizing a hexagonal boron nitride (h-BN) overlayer. Surprisingly, h-BN induces a large rearrangement of the transition metal atoms supported on a fcc(111) heavy-metal surface. This reconstruction is found to be rather generic for this type of heterostructures and has a profound impact on the underlying magnetic properties, ultimately stabilizing various topological magnetic solitons such as skyrmions and bimerons. Our findings call for a reconsideration of h-BN as merely a passive capping layer, showing its potential for not only reconstructing the atomic structure of the underlying material, e.g. through the kagomerization of magnetic films, but also enabling electronic and magnetic phases that are highly sought for the next generation of device technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

NAND-SPIN-Based Processing-in-MRAM Architecture for Convolutional Neural Network Acceleration

The performance and efficiency of running large-scale datasets on traditional computing systems exhibit critical bottlenecks due to the existing "power wall" and "memory wall" problems. To resolve those problems, processing-in-memory (PIM) architectures are developed to bring computation logic in or near memory to alleviate the bandwidth limitations during data transmission. NAND-like spintronics memory (NAND-SPIN) is one kind of promising magnetoresistive random-access memory (MRAM) with low write energy and high integration density, and it can be employed to perform efficient in-memory computation operations. In this work, we propose a NAND-SPIN-based PIM architecture for efficient convolutional neural network (CNN) acceleration. A straightforward data mapping scheme is exploited to improve the parallelism while reducing data movements. Benefiting from the excellent characteristics of NAND-SPIN and in-memory processing architecture, experimental results show that the proposed approach can achieve $\sim$2.6$\times$ speedup and $\sim$1.4$\times$ improvement in energy efficiency over state-of-the-art PIM solutions.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Stochastic Computing Implemented by Skyrmionic Logic Devices

Magnetic skyrmion, topologically non-trivial spin texture, has been considered as promising information carrier in future electronic devices because of its nanoscale size, low depinning current density and high motion velocity. Despite the broad interests in skyrmion racetrack memory, researchers have been recently exploiting logic functions enabled by using the particle-like behaviors of skyrmions. These functions can be applied to unconventional computing, such as stochastic computing (SC), which treats data as probabilities and is superior to binary computing due to its simplicity of logic operation. In this work, we demonstrate SC implemented by skyrmionic logic devices. We propose a skyrmionic AND-OR logic device as a multiplier in the stochastic domain and two skyrmionic multiplexer (MUX) logic devices as stochastic adders. With the assist of voltage controlled magnetic anisotropy (VCMA), the precise control of skyrmions collision is not required in the skyrmionic AND-OR logic device, thus improving the operation robustness. In the two MUX logic devices, skyrmions can be driven by Zhang-Li torque or spin orbit torque (SOT). Particularly, we can flexibly regulate the skyrmion motion by VCMA or voltage controlled Dzyaloshinskii-Moriya Interaction (VCDMI) in the SOT case. Furthermore, 3-bit stochastic multiplier and adder are demonstrated by micromagnetic simulations. In addition, simulations in synthetic antiferromagnets (SAF) show that the performance of our skyrmionic logic gates can be optimized through advanced materials. Our work opens up perspective to implement SC using skyrmionic logic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Thermal Brownian Motion of Skyrmion for True Random Number Generation

The true random number generators (TRNGs) have received extensive attention because of their wide applications in information transmission and encryption. The true random numbers generated by TRNG are typically applied to the encryption algorithm or security protocol of the information security core. Recently, TRNGs have also been employed in emerging stochastic computing paradigm for reducing power consumption. Roughly speaking, TRNG can be divided into circuits-based, e.g., oscillator sampling or directly noise amplifying; and quantum physics-based, e.g., photoelectric effect. The former generally requires a large area and has a large power consumption, whereas the latter is intrinsic random but is more difficult to implement and usually requires additional post-processing circuitry. Very recently, magnetic skyrmion has become a promising candidate for implementing TRNG because of their nanometer size, high stability, and intrinsic thermal Brownian motion dynamics. In this work, we propose a TRNG based on continuous skyrmion thermal Brownian motion in a confined geometry at room temperature. True random bitstream can be easily obtained by periodically detecting the relative position of the skyrmion without the need for additional current pulses. More importantly, we implement a probability-adjustable TRNG, in which a desired ratio of 0 and 1 can be acquired by adding an anisotropy gradient through voltage-controlled magnetic anisotropy (VCMA) effect. The behaviors of the skyrmion-based TRNG are verified by using micromagnetic simulations. The National Institute of Standards and Technology (NIST) test results demonstrate that our proposed random number generator is TRNG with good randomness. Our research provides a new perspective for efficient TRNG realization.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Universal transfer and stacking technique of van der Waals heterostructures for spintronics

The key to achieving high-quality van der Waals heterostructure devices made from various two-dimensional (2D) materials lies in the control over clean and flexible interfaces. However, existing transfer methods based on different mediators possess insufficiencies including the presence of residues, the unavailability of flexible interface engineering, and the selectivity towards materials and substrates since their adhesions differ considerably with the various preparation conditions, from chemical vapor deposition (CVD) growth to mechanical exfoliation. In this paper, we introduce a more universal method using a prefabricated polyvinyl alcohol (PVA) film to transfer and stack 2D materials, whether they are prepared by CVD or exfoliation. This peel-off and drop-off technique promises an ideal interface of the materials without introducing contamination. In addition, the method exhibits a micron-scale spatial transfer accuracy and meets special experimental conditions such as the preparation of twisted graphene and the 2D/metal heterostructure construction. We illustrate the superiority of this method with a WSe2 vertical spin valve device, whose performance verifies the applicability and advantages of such a method for spintronics. Our PVA-assisted transfer process will promote the development of high-performance 2D-material-based devices.

0 citations0 reviewsNo code linkedOpen access