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W. Pan

W. Pan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elMachine Learningcond-mat.dis-nncond-mat.stat-mechcond-mat.supr-conphysics.comp-phphysics.opticsSystems and Control

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Published work

24 published item(s)

preprint2022arXiv

Efficient World-line-based Quantum Monte Carlo Method Without Hubbard-Stratonovich Transformation

By precisely writing down the matrix element of the local Boltzmann operator, we have proposed a new path integral formulation for quantum field theory and developed a corresponding Monte Carlo algorithm. With current formula, the Hubbard-Stratonovich transformation is not necessary, and is not based on the determinant approach, which can improve the computational efficiency. The results show that, the simulation time has the square-law scaling with system sizes, which is comparable with the usual first-principle calculation. The current formula also improves the accuracy of the Suzuki-Trotter decomposition. As an example, we have studied the one-dimensional half-filled Hubbard model at finite temperature. The obtained results are in excellent agreement with the known solutions. The new formula and Monte Carlo algorithm can be used in various studies.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Evidence of decoupling of surface and bulk states in Dirac semimetal $Cd_{3}As_{2}$

Dirac semimetals have attracted a great deal of current interest due to their potential applications in topological quantum computing, low-energy electronic applications, and single photon detection in the microwave frequency range. Herein are results from analyzing the low magnetic (B) field weak-antilocalization behaviors in a Dirac semimetal $Cd_{3}As_{2}$ thin flake device. At high temperatures, the phase coherence length $l_ϕ$ first increases with decreasing temperature (T) and follows a power law dependence of $l_ϕ\propto$ T$^{-0.4}$. Below ~ 3K, $l_ϕ$ tends to saturate to a value of ~ 180 nm. Another fitting parameter $α$, which is associated with independence transport channels, displays a logarithmic temperature dependence for T > 3K, but also tends to saturate below ~ 3K. The saturation value, ~ 1.45, is very close to 1.5, indicating three independent electron transport channels, which we interpret as due to decoupling of both the top and bottom surfaces as well as the bulk. This result, to our knowledge, provides first evidence that the surfaces and bulk states can become decoupled in electronic transport in Dirac semimetal $Cd_{3}As_{2}$.

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preprint2020arXiv

Unraveling the Topological Phase of ZrTe$_5$ via Magneto-infrared Spectroscopy

For materials near the phase boundary between weak and strong topological insulators (TIs), their band topology depends on the band alignment, with the inverted (normal) band corresponding to the strong (weak) TI phase. Here, taking the anisotropic transition-metal pentatelluride ZrTe$_5$ as an example, we show that the band inversion manifests itself as a second extremum (band gap) in the layer stacking direction, which can be probed experimentally via magneto-infrared spectroscopy. Specifically, we find that the band anisotropy of ZrTe$_5$ features a slow dispersion in the layer stacking direction, along with an additional set of optical transitions from a band gap away from the Brillouin zone center. Our work identifies ZrTe5 as a strong TI at liquid helium temperature and provides a new perspective in determining band inversion in layered topological materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Zero Bias Conductance Peak in Dirac Semimetal-Superconductor Devices

Majorana zero modes (MZMs), fundamental building blocks for realizing topological quantum computers, can appear at the interface between a superconductor and a topological material. One of the experimental signatures that has been widely pursued to confirm the existence of MZMs is the observation of a large, quantized zero-bias conductance peak (ZBCP) in the differential conductance measurements. In this Letter, we report observation of such a large ZBCP in junction structures of normal metal (titanium/gold Ti/Au) + Dirac semimetal (cadmium arsenide Cd3As2) + conventional superconductor (aluminum Al), with a value close to four times that of the normal state conductance. Our detailed analyses suggest that this large ZBCP is most likely not caused by MZMs. We attribute the ZBCP, instead, to the existence of a supercurrent between two far-separated superconducting Al electrodes, which shows up as a zero-bias peak because of the circuitry and thermal fluctuations of the supercurrent phase, a mechanism conceived by Ivanchenko and Zil'berman more than 50 years ago [JETP 28, 1272 (1969)]. Our results thus call for extreme caution when assigning the origin of a large ZBCP to MZMs in a multiterminal semiconductor or topological insulator/semimetal setup. We thus provide criteria for identifying when the ZBCP is definitely not caused by an MZM. Furthermore, we present several remarkable experimental results of a supercurrent effect occurring over unusually long distances and clean perfect Andreev reflection features.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Particle-Hole Symmetry and the Fractional Quantum Hall Effect in the Lowest Landau Level

We report on detailed experimental studies of a high-quality heterojunction insulated-gate field-effect transistor (HIGFET) to probe the particle-hole symmetry (PHS) of the FQHE states about half-filling in the lowest Landau level. The HIGFET was specially designed to vary the density of a two-dimensional electronic system under constant magnetic fields. We find in our constant magnetic field, variable density measurements that the sequence of FQHE states at filling factors nu = 1/3, 2/5, 3/7 ... and its particle-hole conjugate states at filling factors 1 - nu = 2/3, 3/5, 4/7 ... have a very similar energy gap. Moreover, a reflection symmetry can be established in the magnetoconductivities between the nu and 1 - nu states about half-filling. Our results demonstrate that the FQHE states in the lowest Landau level are manifestly particle-hole symmetric.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

A Characterization of the Non-Uniqueness of Nonnegative Matrix Factorizations

Nonnegative matrix factorization (NMF) is a popular dimension reduction technique that produces interpretable decomposition of the data into parts. However, this decompostion is not generally identifiable (even up to permutation and scaling). While other studies have provide criteria under which NMF is identifiable, we present the first (to our knowledge) characterization of the non-identifiability of NMF. We describe exactly when and how non-uniqueness can occur, which has important implications for algorithms to efficiently discover alternate solutions, if they exist.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Far Infrared Edge Photoresponse and Persistent Edge Transport in an Inverted InAs/GaSb Heterostructure

Direct current (DC) transport and far infrared photoresponse were studied an InAs/GaSb double quantum well with an inverted band structure. The DC transport depends systematically upon the DC bias configuration and operating temperature. Surprisingly, it reveals robust edge conduction despite prevalent bulk transport in our device of macroscopic size. Under 180 GHz far infrared illumination at oblique incidence, we measured a strong photovoltaic response. We conclude that quantum spin Hall edge transport produces the observed transverse photovoltages. Overall, our experimental results support a hypothesis that the photoresponse arises from direct coupling of the incident radiation field to edge states.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Observation of anti-levitation of Landau levels in vanishing magnetic fields

We report an anti-levitation behavior of Landau levels in vanishing magnetic fields in a high quality hetero-junction insulated-gated field-effect transistor. We found, in the Landau fan diagram of electron density versus magnetic field, the positions of the magneto-resistance minima at Landau level fillings ν=4, 5, 6 move below the 'traditional' Landau level line to lower electron densities. Moreover, the even and odd filling factors show quantitatively different behaviors in anti-levitation, suggesting that the exchange interactions may be important.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

On Identification of Sparse Multivariable ARX Model: A Sparse Bayesian Learning Approach

This paper begins with considering the identification of sparse linear time-invariant networks described by multivariable ARX models. Such models possess relatively simple structure thus used as a benchmark to promote further research. With identifiability of the network guaranteed, this paper presents an identification method that infers both the Boolean structure of the network and the internal dynamics between nodes. Identification is performed directly from data without any prior knowledge of the system, including its order. The proposed method solves the identification problem using Maximum a posteriori estimation (MAP) but with inseparable penalties for complexity, both in terms of element (order of nonzero connections) and group sparsity (network topology). Such an approach is widely applied in Compressive Sensing (CS) and known as Sparse Bayesian Learning (SBL). We then propose a novel scheme that combines sparse Bayesian and group sparse Bayesian to efficiently solve the problem. The resulted algorithm has a similar form of the standard Sparse Group Lasso (SGL) while with known noise variance, it simplifies to exact re-weighted SGL. The method and the developed toolbox can be applied to infer networks from a wide range of fields, including systems biology applications such as signaling and genetic regulatory networks.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Quantum Oscillations at Integer and Fractional Landau Level Indices in ZrTe5

A three-dimensional (3D) Dirac semimetal (DS) is an analogue of graphene, but with linear energy dispersion in all (three) momentum directions.3D DSs have been a fertile playground in discovering novel quantum particles, for example Weyl fermions, in solid state systems.Many 3D DSs (e.g., ZrTe5) were theoretically predicted. We report here the results from the studies of aberration-corrected scanning transmission electron microscopy and low temperature magneto-transport measurements in exfoliated ZrTe5 thin flakes.Several unique results were observed. First, an anomalous-Hall-effect-like behavior was observed around zero magnetic field (B).Second, a non-trivial Berry's phase of π was obtained from the Landau level fan diagram of the Shubnikov-de Haas oscillations in the longitudinal resistivity. Third, the longitudinal resistivity shows linear B field dependence in the quantum limit. Most surprisingly, quantum oscillations were observed at fractional Landau level indices N = 2/3 and 2/5, demonstrating strong electron-electron interactions effects in ZrTe5.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Fractional Quantum Hall Effect at Landau Level Filling nu=4/11

We report low temperature electronic transport results on the fractional quantum Hall effect of composite fermions at Landau level filling nu = 4/11 in a very high mobility and low density sample. Measurements were carried out at temperatures down to 15mK, where an activated magnetoresistance Rxx and a quantized Hall resistance Rxy, within 1% of the expected value of h/(4/11)e^2, were observed. The temperature dependence of the Rxx minimum at 4/11 yields an activation energy gap of ~ 7 mK. Developing Hall plateaus were also observed at the neighboring states at nu = 3/8 and 5/13.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Impact of the modulation doping layer on the ν=5/2 anisotropy

We have carried out a systematic study of the tilted magnetic field induced anisotropy at the Landau level filling factor ν=5/2 in a series of high quality GaAs quantum wells, where the setback distance (d) between the modulation doping layer and the GaAs quantum well is varied from 33 to 164 nm. We have observed that in the sample of the smallest d electronic transport is anisotropic when the in-plane magnetic field (B_{ip}) is parallel to the [1-10] crystallographic direction, but remains more or less isotropic when B_{ip} // [110]. In contrast, in the sample of largest d, electronic transport is anisotropic in both crystallographic directions. Our results clearly show that the modulation doping layer plays an important role in the tilted field induced ν=5/2 anisotropy.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Competing quantum Hall phases in the second Landau level in low density limit

We present in this Letter the results from two high quality, low density GaAs quantum wells. In sample A of electron density n=5.0x10^10 cm^-2, anisotropic electronic transport behavior was observed at ν=7/2 in the second Landau level. We believe that the anisotropy is due to the large Landau level mixing effect in this sample. In sample B of density 4.1x10^10 cm^-2, strong 8/3, 5/2, and 7/3 fractional quantum Hall states were observed. Furthermore, our energy gap data suggest that, similar to the 8/3 state, the 5/2 state may also be spin unpolarized in the low density limit. The results from both samples show that the strong electron-electron interactions and a large Landau level mixing effect play an import role in the competing ground states in the second landau level.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Giant supercurrent states in a superconductor-InAs/GaSb-superconductor junction

Superconductivity in topological materials has attracted a great deal of interest in both electron physics and material sciences since the theoretical predictions that Majorana fermions can be realized in topological superconductors [1-4]. Topological superconductivity could be realized in a type II, band-inverted, InAs/GaSb quantum well if it is in proximity to a conventional superconductor. Here we report observations of the proximity effect induced giant supercurrent states in an InAs/GaSb bilayer system that is sandwiched between two superconducting tantalum electrodes to form a superconductor-InAs/GaSb-superconductor junction. Electron transport results show that the supercurrent states can be preserved in a surprisingly large temperature-magnetic field (T-H) parameter space. In addition, the evolution of differential resistance in T and H reveals an interesting superconducting gap structure.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Terahertz magneto-optical spectroscopy of two-dimensional hole and electron systems

We have used terahertz (THz) magneto-optical spectroscopy to investigate the cyclotron resonance in high mobility two-dimensional electron and hole systems. Our experiments reveal long-lived (~20 ps) coherent oscillations in the measured signal in the presence of a perpendicular magnetic field. The cyclotron frequency extracted from the oscillations varies linearly with magnetic field for a two-dimensional electron gas (2DEG), as expected. However, we find that the complex non-parabolic valence band structure in a two-dimensional hole gas (2DHG) causes the cyclotron frequency and effective mass to vary nonlinearly with the magnetic field, as verified by multiband Landau level calculations. This is the first time that THz magneto-optical spectroscopy has been used to study 2DHG, and we expect that these results will motivate further studies of these unique 2D nanosystems.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Two-dimensional electron gas in monolayer InN quantum wells

We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5x10^{15} cm^{-2} and 420 cm^2/Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Magnetoplasmons in quasi-neutral epitaxial graphene nanoribbons

We present infrared transmission spectroscopy study of the inter-Landau-level excitations in quasi-neutral epitaxial graphene nanoribbon arrays. We observed a substantial deviation in energy of the $L_{0(-1)}$$\to$$L_{1(0)}$ transition from the characteristic square root magnetic-field dependence of two-dimensional graphene. This deviation arises from the formation of upper-hybrid mode between the Landau level transition and the plasmon resonance. In the quantum regime the hybrid mode exhibits a distinct dispersion relation, markedly different from that expected for conventional two-dimensional systems and highly doped graphene.

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preprint2012arXiv

Chaotic Quantum Transport near the Charge Neutrality Point in Inverted Type-II InAs/GaSb Field-Effect Transistors

We present here our recent quantum transport results around the charge neutrality point (CNP) in a type-II InAs/GaSb field-effect transistor. At zero magnetic field, a conductance minimum close to 4e^2/h develops at the CNP and it follows semi-logarithmic temperature dependence. In quantized magnetic (B) fields and at low temperatures, well developed integer quantum Hall states are observed in the electron as well as hole regimes. Quantum transport shows noisy-like behavior around the CNP at extremely high B fields. Surprisingly, when the diagonal conductivity σ_{xx} is plotted against the Hall conductivity σ_{xy}, a circular conductivity law is discovered, suggesting a chaotic quantum transport behavior.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin Polarization of the 12/5 Fractional Quantum Hall Effect

We have carried out tilt magnetic field (B) studies of the ν=12/5 fractional quantum Hall state in an ultra-high quality GaAs quantum well specimen. Its diagonal magneto-resistance Rxx shows a non-monotonic dependence on tilt angle (θ). It first increases sharply with increasing θ, reaches a maximal value of ~ 70 ohms at θ~ 14^o, and then decreases at higher tilt angles. Correlated with this dependence of Rxx on θ, the 12/5 activation energy (Δ_{12/5}) also shows a non-monotonic tilt dependence. Δ_{12/5} first decreases with increasing θ. Around θ= 14^{o}, Δ_{12/5} disappears as Rxx becomes non-activated. With further increasing tilt angles, Δ_{12/5} reemerges and increases with θ. This tilt B dependence at ν=12/5 is strikingly different from that of the well-documented 5/2 state and calls for more investigations on the nature of its ground state.

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preprint2012arXiv

Spin Transition in the ν=8/3 Fractional Quantum Hall Effect

We present here the results from a density dependent study of the activation energy gaps of the fractional quantum Hall effect states at Landau level fillings ν=8/3 and 7/3 in a series of high quality quantum wells. In the density range from 0.5 x 10^{11} to 3 x 10^{11} cm^{-2}, the 7/3 energy gap increases monotonically with increasing density, supporting its ground state being spin polarized. For the 8/3 state, however, its energy gap first decreases with increasing density, almost vanishes at n ~ 0.8 x 10^{11} cm^{-2}, and then turns around and increases with increasing density, clearly demonstrating a spin transition.

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preprint2011arXiv

Impact of disorder on the 5/2 fractional quantum Hall state

We compare the energy gap of the ν=5/2 fractional quantum Hall effect state obtained in conventional high mobility modulation doped quantum well samples with those obtained in high quality GaAs transistors (heterojunction insulated gate field-effect transistors). We are able to identify the different roles that long range and short range disorders play in the 5/2 state and observe that the long range potential fluctuations are more detrimental to the strength of the 5/2 state than short-range potential disorder.

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preprint2011arXiv

Terahertz Coherent Control of a Landau-Quantized Two-Dimensional Electron Gas

We demonstrate coherent control of cyclotron resonance (CR) in a two-dimensional electron gas (2DEG). We use a sequence of terahertz pulses to control the amplitude of CR oscillations in an arbitrary fashion via phase-dependent coherent interactions. We observe a self-interaction effect, where the 2DEG interacts with the terahertz field emitted by itself within the decoherence time, resulting in a revival and collapse of quantum coherence. These observations are accurately describable using {\em single-particle} optical Bloch equations, showing no signatures of electron-electron interactions, which verifies the validity of Kohn's theorem for CR in the coherent regime.

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preprint2011arXiv

Termination of two-dimensional metallic conduction near metal-insulator transition in a Si/SiGe quantum well

We report in this Letter our recent low temperature transport results in a Si/SiGe quantum well with moderate peak mobility. An apparent metal-insulating transition is observed. Within a small range of densities near the transition, the conductivity $σ$ displays non-monotonic temperature dependence. After an initial decrease at high temperatures, $σ$ first increases with decreasing temperature T, showing a metallic behavior. As T continues decreasing, a downturn in $σ$ is observed. This downturn shifts to a lower T at higher densities. More interestingly, the downturn temperature shows a power law dependence on the mobility at the downturn position, suggesting that a similar downturn is also expected to occur deep in the apparent metallic regime at albeit experimentally inaccessible temperatures. This thus hints that the observed metallic phase in 2D systems might be a finite temperature effect.

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preprint2009arXiv

Scaling in Plateau-to-Plateau Transition: A Direct Connection of Quantum Hall Systems with Anderson Localization Model

The quantum Hall plateau transition was studied at temperatures down to 1 mK in a random alloy disordered high mobility two-dimensional electron gas. A perfect power-law scaling with κ=0.42 was observed from 1.2K down to 12mK. This perfect scaling terminates sharply at a saturation temperature of T_s~10mK. The saturation is identified as a finite-size effect when the quantum phase coherence length (L_ϕ ~ T^{-p/2}) reaches the sample size (W) of millimeter scale. From a size dependent study, T_s \propto W^{-1} was observed and p=2 was obtained. The exponent of the localization length, determined directly from the measured κand p, is ν=2.38, and the dynamic critical exponent z = 1.

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