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D. C. Tsui

D. C. Tsui appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.dis-nncond-mat.str-elcond-mat.mtrl-scicond-mat.quant-gas

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Published work

24 published item(s)

preprint2019arXiv

Particle-Hole Symmetry and the Fractional Quantum Hall Effect in the Lowest Landau Level

We report on detailed experimental studies of a high-quality heterojunction insulated-gate field-effect transistor (HIGFET) to probe the particle-hole symmetry (PHS) of the FQHE states about half-filling in the lowest Landau level. The HIGFET was specially designed to vary the density of a two-dimensional electronic system under constant magnetic fields. We find in our constant magnetic field, variable density measurements that the sequence of FQHE states at filling factors nu = 1/3, 2/5, 3/7 ... and its particle-hole conjugate states at filling factors 1 - nu = 2/3, 3/5, 4/7 ... have a very similar energy gap. Moreover, a reflection symmetry can be established in the magnetoconductivities between the nu and 1 - nu states about half-filling. Our results demonstrate that the FQHE states in the lowest Landau level are manifestly particle-hole symmetric.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Observation of anti-levitation of Landau levels in vanishing magnetic fields

We report an anti-levitation behavior of Landau levels in vanishing magnetic fields in a high quality hetero-junction insulated-gated field-effect transistor. We found, in the Landau fan diagram of electron density versus magnetic field, the positions of the magneto-resistance minima at Landau level fillings ν=4, 5, 6 move below the 'traditional' Landau level line to lower electron densities. Moreover, the even and odd filling factors show quantitatively different behaviors in anti-levitation, suggesting that the exchange interactions may be important.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Fractional Quantum Hall Effect at Landau Level Filling nu=4/11

We report low temperature electronic transport results on the fractional quantum Hall effect of composite fermions at Landau level filling nu = 4/11 in a very high mobility and low density sample. Measurements were carried out at temperatures down to 15mK, where an activated magnetoresistance Rxx and a quantized Hall resistance Rxy, within 1% of the expected value of h/(4/11)e^2, were observed. The temperature dependence of the Rxx minimum at 4/11 yields an activation energy gap of ~ 7 mK. Developing Hall plateaus were also observed at the neighboring states at nu = 3/8 and 5/13.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Impact of the modulation doping layer on the ν=5/2 anisotropy

We have carried out a systematic study of the tilted magnetic field induced anisotropy at the Landau level filling factor ν=5/2 in a series of high quality GaAs quantum wells, where the setback distance (d) between the modulation doping layer and the GaAs quantum well is varied from 33 to 164 nm. We have observed that in the sample of the smallest d electronic transport is anisotropic when the in-plane magnetic field (B_{ip}) is parallel to the [1-10] crystallographic direction, but remains more or less isotropic when B_{ip} // [110]. In contrast, in the sample of largest d, electronic transport is anisotropic in both crystallographic directions. Our results clearly show that the modulation doping layer plays an important role in the tilted field induced ν=5/2 anisotropy.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Competing quantum Hall phases in the second Landau level in low density limit

We present in this Letter the results from two high quality, low density GaAs quantum wells. In sample A of electron density n=5.0x10^10 cm^-2, anisotropic electronic transport behavior was observed at ν=7/2 in the second Landau level. We believe that the anisotropy is due to the large Landau level mixing effect in this sample. In sample B of density 4.1x10^10 cm^-2, strong 8/3, 5/2, and 7/3 fractional quantum Hall states were observed. Furthermore, our energy gap data suggest that, similar to the 8/3 state, the 5/2 state may also be spin unpolarized in the low density limit. The results from both samples show that the strong electron-electron interactions and a large Landau level mixing effect play an import role in the competing ground states in the second landau level.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Microwave pinning modes near Landau filling $ν=1$ in two-dimensional electron systems with alloy disorder

We report measurements of microwave spectra of two-dimensional electron systems hosted in dilute Al alloy, Al$_x$Ga$_{1-x}$As, for a range of Landau level fillings, $ν$, around 1. For $ν>0.8$ or $ν<1.2$, the samples exhibit a microwave resonance whose frequency decreases as $ν$ moves away from 1. A resonance with this behavior is the signature of solids of quasiparticles or -holes in the partially occupied Landau level, which was previously seen in ultralow disorder samples. For $ν<0.8$ down to as low as $ν=0.54$, a resonance in the spectra is still present in the Al alloy-disordered samples, though it is partially or completely suppressed at $ν=3/5$ and $1/2$, and is strongly damped over much of this $ν$ range. The resonance also shows a striking enhancement in peak frequency for $ν$ just below 3/4. We discuss possible explanations of the resonance behavior for $ν<0.8$ in terms of the composite fermion picture.

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preprint2014arXiv

Pinning modes of high magnetic field Wigner solids with controlled alloy disorder

For a series of samples with 2D electron systems in dilute Al_x Ga_{1-x}As, with varying x from 0 to 0.8 %, we survey the pinning mode resonances of Wigner solids at the low Landau filling termination of the fractional quantum Hall effect (FQHE) series. For all x studied, the pinning modes are present with frequencies, f_pk, that are consistent with collective weak pinning. For x>=0.22% we find f_pk vs B exhibits a rapid increase that is not present for x=0. We find the observed f_pk is much smaller than values calculated with a simple Wigner solid model which neglects the effects of the disorder on the charge distribution of a carrier.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Two-dimensional electron gas in monolayer InN quantum wells

We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5x10^{15} cm^{-2} and 420 cm^2/Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Enhancement of the $ν= 5/2$ Fractional Quantum Hall State in a Small In-Plane Magnetic Field

Using a 50-nm width, ultra-clean GaAs/AlGaAs quantum well, we have studied the Landau level filling factor $ν= 5/2$ fractional quantum Hall effect in a perpendicular magnetic field $B \sim$ 1.7 T and determined its dependence on tilted magnetic fields. Contrary to all previous results, the 5/2 resistance minimum and the Hall plateau are found to strengthen continuously under an increasing tilt angle $0 < θ< 25^\circ$ (corresponding to an in-plane magnetic field 0 $<$ $B_\parallel$ $< 0.8$ T). In the same range of $θ$ the activation gaps of both the 7/3 and the 8/3 states are found to increase with tilt. The 5/2 state transforms into a compressible Fermi liquid upon tilt angle $θ> 60^\circ$, and the composite fermion series [2+$p/(2p\pm1)$], $p =$ 1, 2 can be identified. Based on our results, we discuss the relevance of a Skyrmion spin texture at $ν= 5/2$ associated with small Zeeman energy in wide quantum wells, as proposed by W$\acute{\text o}$js $et$ $al$., Phys. Rev. Lett. 104, 086801 (2010).

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preprint2012arXiv

Spin Polarization of the 12/5 Fractional Quantum Hall Effect

We have carried out tilt magnetic field (B) studies of the ν=12/5 fractional quantum Hall state in an ultra-high quality GaAs quantum well specimen. Its diagonal magneto-resistance Rxx shows a non-monotonic dependence on tilt angle (θ). It first increases sharply with increasing θ, reaches a maximal value of ~ 70 ohms at θ~ 14^o, and then decreases at higher tilt angles. Correlated with this dependence of Rxx on θ, the 12/5 activation energy (Δ_{12/5}) also shows a non-monotonic tilt dependence. Δ_{12/5} first decreases with increasing θ. Around θ= 14^{o}, Δ_{12/5} disappears as Rxx becomes non-activated. With further increasing tilt angles, Δ_{12/5} reemerges and increases with θ. This tilt B dependence at ν=12/5 is strikingly different from that of the well-documented 5/2 state and calls for more investigations on the nature of its ground state.

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preprint2012arXiv

Spin Transition in the ν=8/3 Fractional Quantum Hall Effect

We present here the results from a density dependent study of the activation energy gaps of the fractional quantum Hall effect states at Landau level fillings ν=8/3 and 7/3 in a series of high quality quantum wells. In the density range from 0.5 x 10^{11} to 3 x 10^{11} cm^{-2}, the 7/3 energy gap increases monotonically with increasing density, supporting its ground state being spin polarized. For the 8/3 state, however, its energy gap first decreases with increasing density, almost vanishes at n ~ 0.8 x 10^{11} cm^{-2}, and then turns around and increases with increasing density, clearly demonstrating a spin transition.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Impact of disorder on the 5/2 fractional quantum Hall state

We compare the energy gap of the ν=5/2 fractional quantum Hall effect state obtained in conventional high mobility modulation doped quantum well samples with those obtained in high quality GaAs transistors (heterojunction insulated gate field-effect transistors). We are able to identify the different roles that long range and short range disorders play in the 5/2 state and observe that the long range potential fluctuations are more detrimental to the strength of the 5/2 state than short-range potential disorder.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Termination of two-dimensional metallic conduction near metal-insulator transition in a Si/SiGe quantum well

We report in this Letter our recent low temperature transport results in a Si/SiGe quantum well with moderate peak mobility. An apparent metal-insulating transition is observed. Within a small range of densities near the transition, the conductivity $σ$ displays non-monotonic temperature dependence. After an initial decrease at high temperatures, $σ$ first increases with decreasing temperature T, showing a metallic behavior. As T continues decreasing, a downturn in $σ$ is observed. This downturn shifts to a lower T at higher densities. More interestingly, the downturn temperature shows a power law dependence on the mobility at the downturn position, suggesting that a similar downturn is also expected to occur deep in the apparent metallic regime at albeit experimentally inaccessible temperatures. This thus hints that the observed metallic phase in 2D systems might be a finite temperature effect.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Unequal Layer Densities in Bilayer Wigner Crystal at High Magnetic Field

We report studies of pinning mode resonances of magnetic field induced bilayer Wigner crystals of bilayer hole samples with negligible interlayer tunneling and different interlayer separations d, in states with varying layer densities, including unequal layer densities. With unequal layer densities, samples with large d relative to the in-plane carrier-carrier spacing a, two pinning resonances are present, one for each layer. For small d/a samples, a single resonance is observed even with significant density imbalance. These samples, at balance, were shown to exhibit an enhanced pinning mode frequency [Zhihai Wang et al., Phys. Rev. Lett. 136804 (2007)], which was ascribed to a one-component, pseudospin ferromagnetic Wigner solid. The evolution of the resonance frequency and line width indicates the quantum interlayer coherence survives at moderate density imbalance, but disappears when imbalance is sufficiently large.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Observation of pinning mode in Wigner solid of 1/3 fractional quantum Hall excitations

We report the observation of a resonance in the microwave spectra of the real diagonal conductivities of a two-dimensional electron system within a range of ~ +- .0.015 $ from filling factor $ν=1/3$. The resonance is remarkably similar to resonances previously observed near integer $ν$, and is interpreted as the collective pinning mode of a disorder-pinned Wigner solid phase of $e/3$-charged carriers .

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Pinning mode resonance of a Skyrme crystal near Landau level filling factor $ν$=1

Microwave pinning-mode resonances found around integer quantum Hall effects, are a signature of crystallized quasiparticles or holes. Application of in-plane magnetic field to these crystals, increasing the Zeeman energy, has negligible effect on the resonances just below Landau level filling $ν=2$, but increases the pinning frequencies near $ν=1$, particularly for smaller quasiparticle/hole densities. The charge dynamics near $ν=1$, characteristic of a crystal order, are affected by spin, in a manner consistent with a Skyrme crystal.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Scaling in Plateau-to-Plateau Transition: A Direct Connection of Quantum Hall Systems with Anderson Localization Model

The quantum Hall plateau transition was studied at temperatures down to 1 mK in a random alloy disordered high mobility two-dimensional electron gas. A perfect power-law scaling with κ=0.42 was observed from 1.2K down to 12mK. This perfect scaling terminates sharply at a saturation temperature of T_s~10mK. The saturation is identified as a finite-size effect when the quantum phase coherence length (L_ϕ ~ T^{-p/2}) reaches the sample size (W) of millimeter scale. From a size dependent study, T_s \propto W^{-1} was observed and p=2 was obtained. The exponent of the localization length, determined directly from the measured κand p, is ν=2.38, and the dynamic critical exponent z = 1.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

AFM local oxidation nanopatterning of a high mobility shallow 2D hole gas

Recently developed AFM local anodic oxidation (LAO) technique offers a convenient way of patterning nanodevices, but imposes even more stringent requirements on the underlying quantum well structure. We developed a new very shallow quantum well design which allows the depth and density of the 2D gas to be independently controlled during the growth. A high mobility (0.5 10^6 cm^2/Vs at 4.2 K) 2D hole gas just 350A below the surface is demonstrated. A quantum point contact, fabricated by AFM LAO nanopatterning from this wafer, shows 9 quantum steps at 50 mK.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

Experiments on the Fermi to Tomonaga-Luttinger liquid transition in quasi-1D systems

We present experimental results on the tunneling into the edge of a two dimensional electron gas (2DEG) obtained with GaAs/AlGaAs cleaved edge overgrown structures. The electronic properties of the edge of these systems can be described by a one-dimensional chiral Tomonaga-Luttinger liquid when the filling factor of the 2DEG is very small. Here we focus on the region where the Tomonaga-Luttinger liquid breaks down to form a standard Fermi liquid close to $ν=1$ and show that we recover a universal curve, which describes all existing data.

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preprint2003arXiv

Wigner crystalization about $ν$=3

We measure a resonance in the frequency dependence of the real diagonal conductivity, Re[$σ_{xx}$], near integer filling factor, $ν=3$. This resonance depends strongly on $ν$, with peak frequency $f_{pk} \approx 1.7$ GHz at $ν=3.04$ or 2.92 close to integer $ν$, but $f_{pk} \approx$ 600 MHz at $ν=3.19$ or 2.82, the extremes of where the resonance is visible. The dependence of $f_{pk}$ upon $n^*$, the density of electrons in the partially filled level, is discussed and compared with similar measurments by Chen {\it et al.}\cite{yong} about $ν=1$ and 2. We interpret the resonance as due to a pinned Wigner crystal phase with density $n^*$ about the $ν=3$ state.

0 citations0 reviewsNo code linkedOpen access
preprint2001arXiv

Coherent electron transport in a Si quantum dot dimer

We show that the coherence of charge transfer through a weakly coupled double-dot dimer can be determined by analyzing the statistics of the conductance pattern, and does not require large phase coherence length in the host material. We present an experimental study of the charge transport through a small Si nanostructure, which contains two quantum dots. The transport through the dimer is shown to be coherent. At the same time, one of the dots is strongly coupled to the leads, and the overall transport is dominated by inelastic co-tunneling processes.

0 citations0 reviewsNo code linkedOpen access
preprint1998arXiv

The Quantized Hall Insulator: A New Insulator in Two-Dimensions

Quite generally, an insulator is theoretically defined by a vanishing conductivity tensor at the absolute zero of temperature. In classical insulators, such as band insulators, vanishing conductivities lead to diverging resistivities. In other insulators, in particular when a high magnetic field (B) is added, it is possible that while the magneto-resistance diverges, the Hall resistance remains finite, which is known as a Hall insulator. In this letter we demonstrate experimentally the existence of another, more exotic, insulator. This insulator, which terminates the quantum Hall effect series in a two-dimensional electron system, is characterized by a Hall resistance which is approximately quantized in the quantum unit of resistance h/e^2. This insulator is termed a quantized Hall insulator. In addition we show that for the same sample, the insulating state preceding the QHE series, at low-B, is of the HI kind.

0 citations0 reviewsNo code linkedOpen access
preprint1997arXiv

The Metallic-Like Conductivity of a Two-Dimensional Hole System

We report on a zero magnetic field transport study of a two-dimensional, variable-density, hole system in GaAs. As the density is varied we observe, for the first time in GaAs-based materials, a crossover from an insulating behavior at low-density, to a metallic-like behavior at high-density, where the metallic behavior is characterized by a large drop in the resistivity as the temperature is lowered. These results are in agreement with recent experiments on Si-based two-dimensional systems by Kravchenko et al. and others. We show that, in the metallic region, the resistivity is dominated by an exponential temperature-dependence with a characteristic temperature which is proportional to the hole density, and appear to reach a constant value at lower temperatures.

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