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Researcher profile

W. Ossau

W. Ossau contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.otherphysics.ins-detphysics.optics

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Published work

9 published item(s)

preprint2013arXiv

Removal of GaAs growth substrates from II-VI semiconductor heterostructures

We report on a process that enables the removal of II-VI semiconductor epilayers from their GaAs growth substrate and their subsequent transfer to arbitrary host environments. The technique combines mechanical lapping and layer selective chemical wet etching and is generally applicable to any II-VI layer stack. We demonstrate the non-invasiveness of the method by transferring an all-II-VI magnetic resonant tunneling diode. High resolution X-ray diffraction proves that the crystal integrity of the heterostructure is preserved. Transport characterization confirms that the functionality of the device is maintained and even improved, which is ascribed to completely elastic strain relaxation of the tunnel barrier layer.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Ultrafast supercontinuum fiber-laser based pump-probe scanning MOKE microscope for the investigation of electron spin dynamics in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution

We describe a two-color pump-probe scanning magneto-optical Kerr effect (MOKE) microscope which we have developed to investigate electron spin phenomena in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution. The key innovation of our microscope is the usage of an ultrafast `white light' supercontinuum fiber-laser source which provides access to the whole visible and near-infrared spectral range. Our Kerr microscope allows for the independent selection of the excitation and detection energy while avoiding the necessity to synchronize the pulse trains of two separate picosecond laser systems. The ability to independently tune the pump and probe wavelength enables the investigation of the influence of excitation energy on the optically induced electron spin dynamics in semiconductors. We demonstrate picosecond real-space imaging of the diffusive expansion of optically excited electron spin packets in a (110) GaAs quantum well sample to illustrate the capabilities of the instrument.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Magnetic field-induced exchange effects between Mn ions and free carriers in ZnSe quantum well through the intermediate nonmagnetic barrier studied by photoluminescence

Photoluminescence (PL) of the 50 nm $Zn_{0.9}Be_{0.05}Mn_{0.05}Se$/ $d$ nm $Zn_{0.943}Be_{0.057}Se$/ 2.5 nm $ZnSe$/ 30 nm $Zn_{0.943}Be_{0.057}Se$ structures is investigated as a function of magnetic field ($B$) and thickness ($d$) of intermediate $Zn_{0.943}Be_{0.057}Se$ nonmagnetic barrier between the $Zn_{0.9}Be_{0.05}Mn_{0.05}Se$ semimagnetic barrier and $ZnSe$ quantum well at the temperature 1.2 K. The rate of the shift of different PL bands of the structures under study is estimated in low and high magnetic fields. The causes of the shift rate increase under pass from low to high magnetic fields are interpreted. The peculiarities of the effect of the intermediate barrier on the luminescence properties of the structures are presented. It is shown that deformation of adjacent layers by the barrier plays a crucial role in the formation of these properties, especially in forming the $Mn$ complexes in the $Zn_{0.9}Be_{0.05}Mn_{0.05}Se$ layer. The change of the band gap as well as of the donor and acceptor levels energies under the effect of biaxial compression of the $Zn_{0.9}Be_{0.05}Mn_{0.05}Se$ layer by the $Zn_{0.943}Be_{0.057}Se$ are estimated. It is concluded that the $Zn_{0.943}Be_{0.057}Se$ intermediate barrier also appreciably changes the effect of giant Zeeman splitting of the semimagnetic $Zn_{0.9}Be_{0.05}Mn_{0.05}Se$ barrier energy levels on the movement of the energy levels of $ZnSe$ quantum well in a magnetic field and on polarization of the quantum well exciton emission.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Interaction between Mn Ions and Free Carriers in Quantum Wells with Asymmetrical Semimagnetic Barriers

Investigations of photoluminescence (PL) in the magnetic field of quantum structures based on the ZnSe quantum well with asymmetrical ZnBeMnSe and ZnBeSe barriers reveal that the introduction of Be into semimagnetic ZnMnSe causes a decrease of the exchange integrals for conductive and valence bands as well as the forming of a complex based on Mn, degeneration of an energy level of which with the energy levels of the V band of ZnBeMnSe or ZnSe results in spin-flip electron transitions.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Non-thermal photocoercivity effect in a ferromagnetic semiconductor

We report a photoinduced change of the coercive field, i.e., a photocoercivity effect (PCE), under very low intensity illumination of a low-doped (Ga,Mn)As ferromagnetic semiconductor. We find a strong correlation between the PCE and the sample resistivity. Spatially resolved dynamics of the magnetization reversal rule out any role of thermal heating in the origin of this PCE, and we propose a mechanism based on the light-induced lowering of the domain wall pinning energy. The PCE is local and reversible, allowing writing and erasing of magnetic images using light.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Magneto-optics of two-dimensional electron gases modified by strong Coulomb interactions in ZnSe quantum wells

The optical properties of two-dimensional electron gases in ZnSe/(Zn,Be)Se and ZnSe/(Zn,Be,Mg)Se modulation-doped quantum wells with electron densities up to 1.4x10^{12} cm^{-2} were studied by photoluminescence, photoluminescence excitation and reflectivity in a temperature range between 1.6 and 70 K and in external magnetic fields up to 48 T. In these structures, the Fermi energy of the two-dimensional electron gas falls in the range between the trion binding energy and the exciton binding energy. Optical spectra in this regime are shown to be strongly influenced by the Coulomb interaction between electrons and photoexcited holes. In high magnetic fields, when the filling factor of the two-dimensional electron gas becomes smaller than two, a change from Landau-level-like spectra to exciton-like spectra occurs. We attempt to provide a phenomenological description of the evolution of optical spectra for quantum wells with strong Coulomb interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Quantum-dot-based optical polarization conversion

We report circular-to-linear and linear-to-circular conversion of optical polarization by semiconductor quantum dots. The polarization conversion occurs under continuous wave excitation in absence of any magnetic field. The effect originates from quantum interference of linearly and circularly polarized photon states, induced by the natural anisotropic shape of the self assembled dots. The behavior can be qualitatively explained in terms of a pseudospin formalism.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Simple Estimation of X- Trion Binding Energy in Semiconductor Quantum Wells

A simple illustrative wave function with only three variational parameters is suggested to calculate the binding energy of negatively charged excitons (X-) as a function of quantum well width. The results of calculations are in agreement with experimental data for GaAs, CdTe and ZnSe quantum wells, which differ considerably in exciton and trion binding energy. The normalized X- binding energy is found to be nearly independent of electron-to-hole mass ratio for any quantum well heterostructure with conventional parameters. Its dependence on quantum well width follows an universal curve. The curve is described by a simple phenomenological equation.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Molecular-beam epitaxy of (Zn,Mn)Se on Si(100)

We have investigated the growth by molecular-beam epitaxy of the II-VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth start has been optimized by using low-temperature epitaxy. Surface properties were assessed by Nomarski and scanning electron microscopy. Optical properties of (Zn,Mn)Se have been studied by photoluminescence and a giant Zeeman splitting of up to 30 meV has been observed. Our observations indicate a high crystalline quality of the epitaxial films.

0 citations0 reviewsNo code linkedOpen access