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Source author record

G. Schmidt

G. Schmidt appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.othercond-mat.softmath.NAphysics.app-phphysics.optics

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Published work

22 published item(s)

preprint2022arXiv

Interplay between nonlinear spectral shift and nonlinear damping of spin waves in ultrathin YIG waveguides

We use the phase-resolved imaging to directly study the nonlinear modification of the wavelength of spin waves propagating in 100-nm thick, in-plane magnetized YIG waveguides. We show that, by using moderate microwave powers, one can realize spin waves with large amplitudes corresponding to precession angles in excess of 10 degrees and nonlinear wavelength variation of up to 18 percent in this system. We also find that, at large precession angles, the propagation of spin waves is strongly affected by the onset of nonlinear damping, which results in a strong spatial dependence of the wavelength. This effect leads to a spatially dependent controllability of the wavelength by the microwave power. Furthermore, it leads to the saturation of nonlinear spectral shift's effects several micrometers away from the excitation point. These findings are important for the development of nonlinear, integrated spin-wave signal processing devices and can be used to optimize their characteristics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Integration and characterization of micron-sized YIG structures with very low Gilbert damping on arbitrary substrates

We present a novel process that allows the transfer of monocrystalline yttrium-iron-garnet microstructures onto virtually any kind of substrate. The process is based on a recently developed method that allows the fabrication of freestanding monocrystalline YIG bridges on gadolinium-gallium-garnet. Here the bridges' spans are detached from the substrate by a dry etching process and immersed in a watery solution. Using drop casting the immersed YIG platelets can be transferred onto the substrate of choice, where the structures finally can be reattached and thus be integrated into complex devices or experimental geometries. Using time resolved scanning Kerr microscopy and inductively measured ferromagnetic resonance we can demonstrate that the structures retain their excellent magnetic quality. At room temperature we find a ferromagnetic resonance linewidth of $μ_0ΔH_{HWHM}\approx 195\,μT$ and we were even able to inductively measure magnon spectra on a single micron-sized yttrium-iron-garnet platelet at a temperature of 5 K. The process is flexible in terms of substrate material and shape of the structure. In the future this approach will allow for new types of spin dynamics experiments up to now unthinkable.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Ultra Thin Films of Yttrium Iron Garnet with Very Low Damping: A Review

Thin Yttrium Iron Garnet (YIG) is a promising material for integrated magnonics. In order to introduce YIG into nanofabrication processes it is necessary to fabricate very thin YIG films with a thickness well below 100 nm while retaining the extraordinary magnetic properties of the material, especially its long magnon lifetime and spin wave propagation length. Here, we give a brief introduction into the topic and we review and discuss the various results published over the last decade in this area. Especially for ultrathin films it turns out that pulsed layer deposition and sputtering are the most promising candidates. In addition, we discuss the application of room temperature deposition and annealing for lift-off based nanopatterning and the properties of nanostructures obtained by this method over the past years.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Investigation of the unidirectional spin heat conveyer effect in a 200nm thin Yttrium Iron Garnet film

We have investigated the unidirectional spin wave heat conveyer effect in sub-micron thick yttrium iron garnet (YIG) films using lock-in thermography (LIT). Although the effect is small in thin layers this technique allows us to observe asymmetric heat transport by magnons which leads to asymmetric temperature profiles differing by several mK on both sides of the exciting antenna, respectively. Comparison of Damon-Eshbach and backward volume modes shows that the unidirectional heat flow is indeed due to non-reciprocal spin-waves. Because of the finite linewidth, small asymmetries can still be observed when only the uniform mode of ferromagnetic resonance is excited. The latter is of extreme importance for example when measuring the inverse spin-Hall effect because the temperature differences can result in thermovoltages at the contacts. Because of the non-reciprocity these thermovoltages reverse their sign with a reversal of the magnetic field which is typically deemed the signature of the inverse spin-Hall voltage.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

All electrical coherent control of the magnetization in thin Yittrium Iron Garnet film

We demonstrate coherent control of time domain ferromagnetic resonance by all electrical excitation and detection. Using two ultrashort magnetic field steps with variable time delay we control the induction decay in yttrium iron garnet (YIG). By setting suitable delay times between the two steps the precession of the magnetization can either be enhanced or completely stopped. The method allows for a determination of the precession frequency within a few precession periods and with an accuracy much higher than can be achieved using fast fourier transformation. Moreover it holds the promise to massively increase precession amplitudes in pulsed inductive microwave magnetometry (PIMM) using low amplitude finite pulse trains. Our experiments are supported by micromagnetic simulations which nicely confirm the experimental results.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Current-induced magnetization reversal in pseudo spin valves in current-in-plane configuration

We demonstrate the current-induced complete magnetization reversal of the free layer in lateral nanowires patterned from metallic pseudo spin valve stacks. The reversal is induced by Oersted fields in conjunction with a dipolar coupling via the lateral stray fields of the two magnetic layers. Starting from the parallel state the Oersted field rotates the magnetization vectors of both magnetic layers in opposite directions so far off the wire axis that the dipolar coupling becomes strong enough to stabilize an antiparallel configuration. As simulations and experiments show this coupling is only achieved for a narrow range of layer thicknesses and for suitable wire geometries. The reversal process is demonstrated as well for straight wires as for wire segments of L-shaped wires with inhomogeneous magnetization in which domain walls are present before and after the switching process.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

High Quality Yttrium Iron Garnet Grown by Room Temperature Pulsed Laser Deposition and Subsequent Annealing

We have investigated recrystallization of amorphous Yttrium Iron Garnet (YIG) by annealing in oxygen atmosphere. Our findings show that well below the melting temperature the material transforms into a fully epitaxial layer with exceptional quality, both structural and magnetic.\\ In ferromagnetic resonance (FMR) ultra low damping and extremely narrow linewidth can be observed. For a 56 nm thick layer a damping constant of $α$=(6.63$\pm$1.50)$\cdot$10$^{-5}$ is found and the linewidth at 9.6 GHz is as small as 1.30$\pm$0.05 Oe which are the lowest values for PLD grown thin films reported so far. Even for a 20 nm thick layer a damping constant of $α$=(7.51$\pm$1.40)$\cdot$10$^{-5}$ is found which is the lowest value for ultrathin films published so far. The FMR linewidth in this case is 3.49$\pm$0.10 Oe at 9.6 GHz. Our results not only present a method of depositing thin film YIG of unprecedented quality but also open up new options for the fabrication of thin film complex oxides or even other crystalline materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Inverse spin Hall effect in a complex ferromagnetic oxide heterostructure

Complex oxide heterostructures are hot candidates for post CMOS multi-functional devices. Especially in spintronics applications ferromagnetic oxides may play a key role because they can exhibit extraordinary high spin polarization. Indeed, there are already plenty of examples in spintronics, notably in the area of spin pumping and inverse spin Hall effect (ISHE) \cite{Azevedo2011, Czeschka2011, Hahn2013, Obstbaum2014}. Although complex oxides have been used in these experiments as a source of spin currents, they have never been demonstrated to act as a spin sink that exhibits ISHE. Here we show that in a heterostructure consisting of La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ (LSMO) and SrRuO$_{3}$ (SRO) the low temperature ferromagnet SRO can act as a spin sink and exhibit a sizeable ISHE which persists even below its Curie temperature. This result opens up new possibilities for application of all oxide heterostructures in spintronics and may significantly extend the research on spin Hall effect and related phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Nanosized Vertical Organic Spin-Valves

A fabrication process for vertical organic spin-valve devices has been developed which offers the possibility to achieve active device areas of less than 500x500 nm^2 and is flexible in terms of material choice for the active layers. Characterization of the resulting devices shows a large magnetoresistance of sometimes more than 100%, however with equally large variation from device to device. Comparison with large-area spin-valves indicates that the magnetoresistance of both, large and small devices most likely originates from tunneling through pinholes and tunneling magnetoresistance.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Sidewall depletion in nano-patterned LAO/STO heterostructures

We report the fabrication of nanostructures from the quasi-two-dimensional electron gas (q2DEG) formed at the LaAlO$_{3}$/ SrTiO$_{3}$ (LAO/STO) interface. The process uses electron beam lithography in combination with reactive ion etching. This technique allows to pattern high-quality structures down to lateral dimensions as small as $100$nm while maintaining the conducting properties without inducing conductivity in the STO substrate. Temperature dependent transport properties of patterned Hall bars of various widths show only a small size dependence of conductivity at low temperature as well as at room temperature. The deviation can be explained by a narrow lateral depletion region. All steps of the patterning process are fully industry compatible.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Large room-temperature magnetoresistance in lateral organic spin valves fabricated by in-situ shadow evaporation

We report the successful fabrication of lateral organic spin valves with a channel length in the sub $100\,nm$ regime. The fabication process is based on in-situ shadow evaporation under UHV conditions and therefore yields clean and oxygen-free interfaces between the ferromagnetic metallic electrodes and the organic semiconductor. The spin valve devices consist of Nickel and Cobalt-iron electrodes and the high mobility \emph{n}-type organic semiconductor $N,N'$-bis(heptafluorobutyl)-$3,4:9,10$-perylene diimide. Our studies comprise fundamental investigations of the process' and materials' suitability for the fabrication of lateral spin valve devices as well as magnetotransport measurements at room temperature. The best devices exhibit a magnetoresistance of up to $50\,%$, the largest value for room temperature reported so far.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Vertical organic spin valves in perpendicular magnetic fields

We report the results of magnetoresistance measurements in vertical organic spin valves with the magnetic field oriented perpendicular to the layer stack. The magnetoresistance measurements were performed after carefully preparing either parallel or antiparallel in-plane magnetization states of the magnetic electrodes in order to observe traces of Hanle precession. Due to the low mobility in organic semiconductors the transit time of spin polarized carriers should allow for precession of the spins in perpendicular fields which in statistical average would quench the magnetoresistance. However, in none of the experiments we do observe any change in resistance while sweeping the perpendicular field, up to the point where the electrode's magnetization starts to reorient. This absence of Hanle type effects indicates that the magnetoresistance is not based on the injection of spin polarized electrons into the organic semiconductor but rather on tunneling through pinholes superimposed with tunneling anisotropic magnetoresistance.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Computation of volume potentials over bounded domains via approximate approximations

We obtain cubature formulas of volume potentials over bounded domains combining the basis functions introduced in the theory of approximate approximations with their integration over the tangential-halfspace. Then the computation is reduced to the quadrature of one dimensional integrals over the halfline. We conclude the paper providing numerical tests which show that these formulas give very accurate approximations and confirm the predicted order of convergence.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Magnetic field-induced exchange effects between Mn ions and free carriers in ZnSe quantum well through the intermediate nonmagnetic barrier studied by photoluminescence

Photoluminescence (PL) of the 50 nm $Zn_{0.9}Be_{0.05}Mn_{0.05}Se$/ $d$ nm $Zn_{0.943}Be_{0.057}Se$/ 2.5 nm $ZnSe$/ 30 nm $Zn_{0.943}Be_{0.057}Se$ structures is investigated as a function of magnetic field ($B$) and thickness ($d$) of intermediate $Zn_{0.943}Be_{0.057}Se$ nonmagnetic barrier between the $Zn_{0.9}Be_{0.05}Mn_{0.05}Se$ semimagnetic barrier and $ZnSe$ quantum well at the temperature 1.2 K. The rate of the shift of different PL bands of the structures under study is estimated in low and high magnetic fields. The causes of the shift rate increase under pass from low to high magnetic fields are interpreted. The peculiarities of the effect of the intermediate barrier on the luminescence properties of the structures are presented. It is shown that deformation of adjacent layers by the barrier plays a crucial role in the formation of these properties, especially in forming the $Mn$ complexes in the $Zn_{0.9}Be_{0.05}Mn_{0.05}Se$ layer. The change of the band gap as well as of the donor and acceptor levels energies under the effect of biaxial compression of the $Zn_{0.9}Be_{0.05}Mn_{0.05}Se$ layer by the $Zn_{0.943}Be_{0.057}Se$ are estimated. It is concluded that the $Zn_{0.943}Be_{0.057}Se$ intermediate barrier also appreciably changes the effect of giant Zeeman splitting of the semimagnetic $Zn_{0.9}Be_{0.05}Mn_{0.05}Se$ barrier energy levels on the movement of the energy levels of $ZnSe$ quantum well in a magnetic field and on polarization of the quantum well exciton emission.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Tunneling anisotropic magnetoresistance in organic spin valves

We report the observation of tunneling anisotropic magnetoresistance (TAMR) in an organic spin-valve-like structure with only one ferromagnetic electrode. The device is based on a new high mobility perylene diimide-based n-type organic semiconductor. The effect originates from the tunneling injection from the LSMO contact and can thus occur even for organic layers which are too thick to support the assumption of tunneling through the layer. Magnetoresistance measurements show a clear spin-valve signal, with the typical two step switching pattern caused by the magnetocrystalline anisotropy of the epitaxial magnetic electrode.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

A Frequency-Controlled Magnetic Vortex Memory

Using the ultra low damping NiMnSb half-Heusler alloy patterned into vortex-state magnetic nano-dots, we demonstrate a new concept of non-volatile memory controlled by the frequency. A perpendicular bias magnetic field is used to split the frequency of the vortex core gyrotropic rotation into two distinct frequencies, depending on the sign of the vortex core polarity $p=\pm1$ inside the dot. A magnetic resonance force microscope and microwave pulses applied at one of these two resonant frequencies allow for local and deterministic addressing of binary information (core polarity).

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Interaction between Mn Ions and Free Carriers in Quantum Wells with Asymmetrical Semimagnetic Barriers

Investigations of photoluminescence (PL) in the magnetic field of quantum structures based on the ZnSe quantum well with asymmetrical ZnBeMnSe and ZnBeSe barriers reveal that the introduction of Be into semimagnetic ZnMnSe causes a decrease of the exchange integrals for conductive and valence bands as well as the forming of a complex based on Mn, degeneration of an energy level of which with the energy levels of the V band of ZnBeMnSe or ZnSe results in spin-flip electron transitions.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Exploiting Locally Imposed Anisotropies in (Ga,Mn)As: a Non-volatile Memory Device

Progress in (Ga,Mn)As lithography has recently allowed us to realize structures where unique magnetic anisotropy properties can be imposed locally in various regions of a given device. We make use of this technology to fabricate a device in which we study transport through a constriction separating two regions whose magnetization direction differs by 90 degrees. We find that the resistance of the constriction depends on the flow of the magnetic field lines in the constriction region and demonstrate that such a structure constitutes a non-volatile memory device.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Magneto-optics of two-dimensional electron gases modified by strong Coulomb interactions in ZnSe quantum wells

The optical properties of two-dimensional electron gases in ZnSe/(Zn,Be)Se and ZnSe/(Zn,Be,Mg)Se modulation-doped quantum wells with electron densities up to 1.4x10^{12} cm^{-2} were studied by photoluminescence, photoluminescence excitation and reflectivity in a temperature range between 1.6 and 70 K and in external magnetic fields up to 48 T. In these structures, the Fermi energy of the two-dimensional electron gas falls in the range between the trion binding energy and the exciton binding energy. Optical spectra in this regime are shown to be strongly influenced by the Coulomb interaction between electrons and photoexcited holes. In high magnetic fields, when the filling factor of the two-dimensional electron gas becomes smaller than two, a change from Landau-level-like spectra to exciton-like spectra occurs. We attempt to provide a phenomenological description of the evolution of optical spectra for quantum wells with strong Coulomb interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Quantum-dot-based optical polarization conversion

We report circular-to-linear and linear-to-circular conversion of optical polarization by semiconductor quantum dots. The polarization conversion occurs under continuous wave excitation in absence of any magnetic field. The effect originates from quantum interference of linearly and circularly polarized photon states, induced by the natural anisotropic shape of the self assembled dots. The behavior can be qualitatively explained in terms of a pseudospin formalism.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Molecular-beam epitaxy of (Zn,Mn)Se on Si(100)

We have investigated the growth by molecular-beam epitaxy of the II-VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth start has been optimized by using low-temperature epitaxy. Surface properties were assessed by Nomarski and scanning electron microscopy. Optical properties of (Zn,Mn)Se have been studied by photoluminescence and a giant Zeeman splitting of up to 30 meV has been observed. Our observations indicate a high crystalline quality of the epitaxial films.

0 citations0 reviewsNo code linkedOpen access
preprint2002arXiv

Temperature Dependent Magnetic Anisotropy in (Ga,Ma)As Layers

It is demonstrated by SQUID magnetization measurements that (Ga,Mn)As films can exhibit rich characteristics of magnetic anisotropy depending not only to the epitaxial strain but being strongly influenced by the hole and Mn concentration, and temperature. This behavior reflects the spin anisotropy of the valence subbands and corroborates predictions of the mean field Zener model of the carrier mediated ferromagnetism in III-V diluted magnetic semiconductors with Mn. At the same time the existence of in-plane uniaxial anisotropy with [110] the easy axis is evidenced. This is related to the top/bottom symmetry breaking, resulting in the lowering of point symmetry of (Ga,Mn)As to the C_{2v} symmetry group. The latter mechanism coexists with the hole-induced cubic anisotropy, but takes over close to T_C.

0 citations0 reviewsNo code linkedOpen access