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W. -K. Kwok

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Published work

15 published item(s)

preprint2022arXiv

Full superconducting gap in the candidate topological superconductor In$_{1-x}$Pb$_x$Te for x = 0.2

High-pressure synthesis techniques have allowed for the growth of samples on the indium-rich side of (Pb,In)Te, which have increased superconducting transition temperatures compared to lead-rich compounds. In this study we present measurements of the temperature dependence of the London penetration depth $Δλ(T)$ in the compound In$_{0.8}$Pb$_{0.2}$Te, which shows a bulk $T_{c,onset}$ of $\sim4.75$ K. The results indicate fully gapped BCS-like behavior, ruling out odd-parity, topologically nontrivial $A_{2u}$ pairing; however, odd-parity $A_{1u}$ pairing is still possible. Critical field values measured below 1 K and other superconducting parameters are also presented.

preprint2022arXiv

Multimodal synchrotron X-ray diffraction across the superconducting transition of Sr$_{0.1}$Bi$_2$Se$_3$

In the doped topological insulator Sr$_x$Bi$_2$Se$_3$, a pronounced in-plane two-fold symmetry is observed in electronic properties below the superconducting transition temperature $T_c \sim$ 3 K, despite the three-fold symmetry of the observed $R\bar{3}m$ space group. The axis of two-fold symmetry is nominally pinned to one of three rotational equivalent directions and crystallographic strain has been proposed to be the origin of this pinning. We carried out multimodal synchrotron diffraction and resistivity measurements down to $\sim$0.68 K and in magnetic fields up to 45 kG on a single crystal of Sr$_{0.1}$Bi$_2$Se$_3$ to probe the effect of superconductivity on the crystallographic distortion. Our results indicate that there is no in-plane crystallographic distortion at the level of $1x10^{-5}$ associated with the superconducting transition. These results further support the model that the large two-fold in-plane anisotropy of superconducting properties of Sr$_x$Bi$_2$Sr$_3$ is not structural in origin but electronic, namely it is caused by a nematic superconducting order parameter of Eu symmetry.

preprint2022arXiv

Superconducting properties of the spin Hall candidate Ta3Sb with eightfold degeneracy

We report the synthesis and characterization of phase pure Ta3Sb, a material predicted to be topological with eightfold degenerate fermionic states [Science 353, aaf5037 (2016)] and to exhibit a large spin Hall effect [Sci. Adv. 5, eaav8575 (2019]. We observe superconductivity in Ta3Sb with Tc~ 0.67 K in both electrical resistivity \r{ho}(T) and specific heat C(T) measurements. Field dependent measurements yield the superconducting phase diagram with an upper critical field of Hc2(0) ~ 0.95 T, corresponding to a superconducting coherence length of ξ ~18.6 nm. The gap ratio deduced from specific heat anomaly, 2Δ0/kBTc is 3.46, a value close to the Bardeen-Cooper-Schrieffer (BCS) value of 3.53. From a detailed analysis of both the transport and thermodynamic data within the Ginsburg-Landau (GL) framework, a GL parameter of \k{appa} ~90 is obtained identifying Ta3Sb as an extreme type-II superconductor. The observation of superconductivity in an eightfold degenerate fermionic compound with topological surface states and predicted large spin Hall conductance positions Ta3Sb as an appealing platform to further explore exotic quantum states in multifold degenerate systems.

preprint2020arXiv

Nodeless superconducting gap in the candidate topological superconductor Sn$_{1-x}$In$_x$Te for x = 0.7

High-pressure synthesis techniques have allowed for the growth of Sn$_{1-x}$In$_x$Te samples beyond the ambient In-saturation limit of $x$ = 0.5 (T$_c \sim$ 4.5 K). In this study, we present measurements of the temperature dependence of the London penetration depth $Δλ(T)$ in this superconducting doped topological insulator for $x$ = 0.7, where T$_{c,onset}\approx 5$ K. The results indicate fully gapped BCS-like behavior, ruling out odd-parity $A_{2u}$ pairing; however, odd-parity $A_{1u}$ pairing is still possible. Critical field values measured below 1 K and other superconducting parameters are also presented.

preprint2019arXiv

Magnetic and superconducting anisotropy in Ni-doped RbEuFe$_4$As$_4$ single crystals

We investigate the effect of Ni doping on the Fe-site in single crystals of the magnetic superconductor RbEuFe$_4$As$_4$ for doping concentrations of up to 4%. A clear suppression in the superconducting transition temperature is observed in specific heat, resistivity and magnetization measurements. Upon Ni-doping, the resistivity curves shift up in a parallel fashion indicating a strong increase of the residual resistivity due to scattering by charged dopand atoms while the shape of the curve and thus the electronic structure appears largely unchanged. The observed step $ΔC/T_c$ at the superconducting transition decreases strongly for increasing Ni doping in agreement with expectations based on a model of multi-band superconductivity and strong inter-band pairing. The upper critical field slopes are reduced upon Ni doping for in- as well as out-of-plane fields leading to a small reduction in the superconducting anisotropy. The specific heat measurements of the magnetic transition reveal the same BKT behavior close to the transition temperature $T_m$ for all doping levels. The transition temperature is essentially unchanged upon doping. The in to out-of-plane anisotropy of Eu-magnetism observed at small magnetic fields is unaltered as compared to the undoped compound. All of these observations indicate a decoupling of the Eu magnetism from superconductivity and essentially no influence of Ni doping on the Eu magnetism in this compound.

preprint2016arXiv

Decoupling and tuning competing effects of different types of defects on flux creep in irradiated YBa$_{2}$Cu$_{3}$O$_{7-δ}$ coated conductors

YBa$_{2}$Cu$_{3}$O$_{7-δ}$ coated conductors (CCs) have achieved high critical current densities ($\textit{J}_{c}$) that can be further increased through the introduction of additional defects using particle irradiation. However, these gains are accompanied by increases in the flux creep rate, a manifestation of competition between the different types of defects. Here, we study this competition to better understand how to design pinning landscapes that simultaneously increase $\textit{J}_{c}$ and reduce creep. CCs grown by metal organic deposition show non-monotonic changes in the temperature-dependent creep rate, $\textit{S}(\textit{T})$. Notably, in low fields, there is a conspicuous dip to low $\textit{S}$ as temperature ($\textit{T}$) increases from ~20 K to ~65 K. Oxygen-, proton-, and Au-irradiation substantially increase $\textit{S}$ in this temperature range. Focusing on an oxygen-irradiated CC, we investigate the contribution of different types of irradiation-induced defects to the flux creep rate. Specifically, we study $\textit{S}(\textit{T})$ as we tune the relative density of point defects to larger defects by annealing both an as-grown and an irradiated CC in O$_{2}$ at temperatures $\textit{T}_{A}$ = 250$°$C to 600$°$C. We observe a steady decrease in $\textit{S}$($\textit{T}$ > 20 K) with increasing $\textit{T}_{A}$, unveiling the role of pre-existing nanoparticle precipitates in creating the dip in $\textit{S}(\textit{T})$ and point defects and clusters in increasing $\textit{S}$ at intermediate temperatures.

preprint2016arXiv

Evidence of nodes in the order parameter of the superconducting doped topological insulator Nb$_x$Bi$_2$Se$_3$ via penetration depth measurements

The low-temperature variation of the London penetration depth $λ(T)$ in the candidate topological superconductor Nb$_x$Bi$_2$Se$_3$ (x = 0.25) is reported for several crystals. The measurements were carried out by means of a tunnel-diode oscillator (TDO) technique in both field orientations ($H_{rf} \parallel$ $c$ and $H_{rf} \parallel$ $ab$ planes). All samples exhibited power law behavior at low temperatures ($Δλ\sim T^2$) clearly indicating the presence of point nodes in the superconducting order parameter. The results presented here are consistent with a nematic odd-parity spin-triplet $E_u$ pairing state in Nb$_x$Bi$_2$Se$_3$.

preprint2016arXiv

Toward superconducting critical current by design

We present the new paradigm of critical current by design. Analogous to materials by design, it aims at predicting the optimal defect landscape in a superconductor for targeted applications by elucidating the vortex dynamics responsible for the bulk critical current. To highlight this approach, we demonstrate the synergistic combination of critical current measurements on commercial high-temperature superconductors containing self-assembled and irradiation tailored correlated defects by using large-scale time-dependent Ginzburg-Landau simulations for vortex dynamics.

preprint2013arXiv

Direct imaging of hot spots in Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} mesa terahertz sources

Stacks of intrinsic Josephson junctions (IJJs) made from high-temperature superconductors such as Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} (Bi-2212) are a promising source of coherent continuous-wave terahertz radiation. It is thought that at electrical bias conditions under which THz-emission occurs hot spots may form due to resistive self-heating, and that these spots may be highly beneficial for the generation of high levels of THz power. Here we perform an imaging study of the temperature distribution at the surface of BSCCO stacks utilizing the temperature-dependent 612nm fluorescence line of Eu^{3+} in a europium chelate. The images directly reveal a highly non-uniform temperature distribution in which the temperature in the middle of the stack can exceed the superconducting transition temperature by tens of Kelvin under biasing conditions typical for THz-emission.

preprint2013arXiv

Powerful terahertz emission from Bi2Sr2CaCu2O8+delta mesa arrays

Stacks of intrinsic Josephson junctions (IJJs) in high-temperature superconductors enable the fabrication of compact sources of coherent terahertz radiation. Here we demonstrate that multiple stacks patterned on the same Bi2Sr2CaCu2O8+delta crystal can - under optimized conditions - be synchronized to emit high-power THz-radiation. For three synchronized stacks we achieved 610 microwatts of continuous-wave coherent radiation power at 0.51 THz. We suggest that synchronization is promoted by THz-waves in the base crystal. We note though that synchronization cannot be achieved in all samples. However, even in these cases powers on the 100-microwatt scale can be generated.

preprint2012arXiv

Catalyst-Free Growth of Millimeter-Long Topological Insulator Bi2Se3 Nanoribbons and the Observation of pi Berry Phase

We report the growth of single-crystalline Bi2Se3 nanoribbons with lengths up to several millimeters via a catalyst-free physical vapor deposition method. Scanning transmission electron microscopy analysis reveals that the nanoribbons grow along the (1120) direction. We obtain a detailed characterization of the electronic structure of the Bi2Se3 nanoribbons from measurements of Shubnikov-de Haas (SdH) quantum oscillations. Angular dependent magneto-transport measurements reveal a dominant two-dimensional contribution originating from surface states and weak contribution from the bulk states. The catalyst-free synthesis yields high-purity nanocrystals enabling the observation of a large number of SdH oscillation periods and allowing for an accurate determination of the pi-Berry phase, one of the key features of Dirac fermions in topological insulators. The long-length nanoribbons can empower the potential for fabricating multiple nanoelectronic devices on a single nanoribbon.

preprint2011arXiv

Doping and Irradiation Controlled Vortex Pinning Behavior in BaFe2(As1-xPx)2 Single Crystals

We report on the systematic evolution of vortex pinning behavior in isovalent doped single crystals of BaFe2(As1-xPx)2. Proceeding from optimal doped to ovedoped samples, we find a clear transfor- mation of the magnetization hysteresis from a fishtail behavior to a distinct peak effect followed by a reversible magnetization and Bean Livingston surface barriers. Strong point pinning dominates the vortex behavior at low fields whereas weak collective pinning determines the behavior at higher fields. In addition to doping effects, we show that particle irradiation by energetic protons can tune vortex pinning in these materials.

preprint2011arXiv

Tunable terahertz emission from Bi2Sr2CaCu2O8+δ mesa devices

We have measured coherent terahertz emission spectra from Bi2Sr2CaCu2O8+δ mesa devices, as a function of temperature and mesa bias voltage. The emission frequency is found to be tunable by up to 12% by varying the temperature and bias voltage. We attribute the appearance of tunability to asymmetric boundaries at the top and bottom, and the non-rectangular cross-section of the mesas. This interpretation is consistent with numerical simulations of the dynamics of intrinsic Josephson junctions in the mesa. Easily tunable emission frequency may have important implications for the design of terahertz devices based on stacked intrinsic Josephson junctions.

preprint2009arXiv

Emission of Terahertz Waves from Stacks of Intrinsic Josephson Junctions

By patterning mesoscopic crystals of Bi2Sr2CaCu2O8 (BSCCO) into electromagnetic resonators the oscillations of a large number of intrinsic Josephson junctions can be synchronized into a macroscopic coherent state accompanied by the emission of strong continuous wave THz-radiation. The temperature dependence of the emission is governed by the interplay of self-heating in the resonator and by re-trapping of intrinsic Josephson junctions which can yield a strongly nonmonotonic temperature dependence of the emission power. Furthermore, proper shaping of the resonators yields THzsources with voltage-tunable emission frequencies.

preprint1999arXiv

Electrostatically-Driven Granular Media: Phase Transitions and Coarsening

We report the experimental and theoretical study of electrostatically driven granular material. We show that the charged granular medium undergoes a hysteretic first order phase transition from the immobile condensed state (granular solid) to a fluidized dilated state (granular gas) with a changing applied electric field. In addition we observe a spontaneous precipitation of dense clusters from the gas phase and subsequent coarsening - coagulation of these clusters. Molecular dynamics simulations shows qualitative agreement with experimental results.