Abstract
High-pressure synthesis techniques have allowed for the growth of SnInTe samples beyond the ambient In-saturation limit of = 0.5 (T 4.5 K). In this study, we present measurements of the temperature dependence of the London penetration depth in this superconducting doped topological insulator for = 0.7, where T K. The results indicate fully gapped BCS-like behavior, ruling out odd-parity pairing; however, odd-parity pairing is still possible. Critical field values measured below 1 K and other superconducting parameters are also presented.
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